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CY9AF111KQN-G-AVE2 CY9AF111KQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 96KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.95 EUR
10+11.71 EUR
25+11.16 EUR
80+9.69 EUR
260+9.26 EUR
520+8.44 EUR
1040+7.35 EUR
Mindestbestellmenge: 2
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CY9AF114NAPMC-GNE2 CY9AF114NAPMC-GNE2 Infineon Technologies Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.23 EUR
10+9.51 EUR
25+8.83 EUR
90+8.34 EUR
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CY9AF141MAPMC-G-MNE2 CY9AF141MAPMC-G-MNE2 Infineon Technologies cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.58 EUR
10+14.06 EUR
25+13.41 EUR
119+11.64 EUR
238+11.12 EUR
476+10.14 EUR
952+8.83 EUR
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CY9AF154NAPMC-G-JNE2 CY9AF154NAPMC-G-JNE2 Infineon Technologies MB9A150RA_Series.pdf Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.58 EUR
10+14.06 EUR
25+13.41 EUR
90+11.64 EUR
270+11.12 EUR
450+10.14 EUR
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CY9AF114NPMC-GE1 CY9AF114NPMC-GE1 Infineon Technologies Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.03 EUR
10+14.49 EUR
25+13.81 EUR
90+11.99 EUR
270+11.45 EUR
450+10.44 EUR
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CY9AF155NPMC-G-JNE2 CY9AF155NPMC-G-JNE2 Infineon Technologies Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.30 EUR
10+16.82 EUR
25+16.13 EUR
90+14.21 EUR
270+13.51 EUR
450+12.64 EUR
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CY9AF155NAPMC-G-JNE2 CY9AF155NAPMC-G-JNE2 Infineon Technologies MB9A150RA_Series.pdf Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.30 EUR
10+16.82 EUR
25+16.13 EUR
90+14.21 EUR
270+13.51 EUR
450+12.64 EUR
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KTS 6027-2 KTS 6027-2 Infineon Technologies KTS6027%2C29-2.pdf Description: IC VIDEO TUNER 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Applications: Consumer Video
Supplier Device Package: PG-TSSOP-28
Control Interface: I2C, Serial
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC CY7C4041KV13-667FCXC Infineon Technologies Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Description: IC SRAM 72MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.1V ~ 1.3V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 667 MHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSO065N03MSG BSO065N03MSG Infineon Technologies INFNS16222-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 2500 Stücke:
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1094+0.44 EUR
Mindestbestellmenge: 1094
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IPW60R016CM8XKSA1 IPW60R016CM8XKSA1 Infineon Technologies Description: IPW60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 97 Stücke:
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1+20.63 EUR
30+16.70 EUR
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CY15V104QN-50SXI CY15V104QN-50SXI Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.85 EUR
10+37.15 EUR
25+35.43 EUR
50+34.18 EUR
100+32.97 EUR
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CY15V104QSN-108SXI CY15V104QSN-108SXI Infineon Technologies Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
1+48.86 EUR
10+43.35 EUR
25+41.33 EUR
94+38.58 EUR
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IPZA60R037CM8XKSA1 IPZA60R037CM8XKSA1 Infineon Technologies Description: IPZA60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 460 Stücke:
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2+14.01 EUR
10+12.00 EUR
240+9.41 EUR
Mindestbestellmenge: 2
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IPZA60R016CM8XKSA1 IPZA60R016CM8XKSA1 Infineon Technologies Description: IPZA60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 477 Stücke:
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1+22.70 EUR
10+20.00 EUR
240+16.75 EUR
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IMZA65R007M2HXKSA1 IMZA65R007M2HXKSA1 Infineon Technologies IMZA65R007M2H.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 349 Stücke:
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1+49.44 EUR
30+36.56 EUR
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KIT1EDBAUXSICTOBO1 Infineon Technologies Description: KIT_1EDB_AUX_SIC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB9275F, 2EDN7533B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Produkt ist nicht verfügbar
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CY7C09449PV-AC CY7C09449PV-AC Infineon Technologies CY7C09449PV-AC.pdf Description: IC SRAM 128KBIT PAR 160TQFP
Packaging: Bag
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 50 MHz
Memory Format: SRAM
Supplier Device Package: 160-TQFP (24x24)
Memory Interface: Parallel
Memory Organization: 4K x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFP4137PBF IRFP4137PBF Infineon Technologies irfp4137pbf.pdf?fileId=5546d462533600a401535629208b2002 Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
auf Bestellung 234 Stücke:
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101+4.91 EUR
Mindestbestellmenge: 101
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FP100R12KT4PB11BPSA1 FP100R12KT4PB11BPSA1 Infineon Technologies Infineon-FP100R12KT4-DS-v02_00-en_jp.pdf?fileId=db3a30433dcf2fc4013dd015eb0a0208 Description: IGBT MODULE LOW PWR ECONO3-3
Packaging: Tray
auf Bestellung 4 Stücke:
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1+219.14 EUR
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IPD30N03S2L10ATMA1 IPD30N03S2L10ATMA1 Infineon Technologies Infineon-IPD30N03S2L_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270bd33b66&ack=t Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IPT014N10N5ATMA1 IPT014N10N5ATMA1 Infineon Technologies Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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IPT014N10N5ATMA1 IPT014N10N5ATMA1 Infineon Technologies Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.86 EUR
10+8.04 EUR
100+5.88 EUR
500+5.13 EUR
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CY8C4147LQE-S473T CY8C4147LQE-S473T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY91F522BSEPMC1-GSE1 CY91F522BSEPMC1-GSE1 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY7C1361A-100BGC CY7C1361A-100BGC Infineon Technologies CY7C1361A_63A.pdf Description: IC SRAM 9MBIT 100MHZ 119BGA
Packaging: Bag
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1361C-100BGC CY7C1361C-100BGC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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PXM1310CDMG003XTMA1 PXM1310CDMG003XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PRIMARION CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
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IDWD30E120D7XKSA1 IDWD30E120D7XKSA1 Infineon Technologies IDWD30E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 52A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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CY8C24423A-24SXIT CY8C24423A-24SXIT Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRF6655TRPBF IRF6655TRPBF Infineon Technologies IRF6655%28TR%29PbF.pdf Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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CY7C024BV-15AXI CY7C024BV-15AXI Infineon Technologies Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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S6E2C18L0AGL2000A S6E2C18L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6J334BJDESE20000 S6J334BJDESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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CY3205-DK CY3205-DK Infineon Technologies PSoC%20Dev.%20Tools%20Selector%20Guide.pdf Description: CY8C26443 EVAL BRD
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: M8C
Utilized IC / Part: CY8C26443
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S29GL064N90TFI020 S29GL064N90TFI020 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
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S29GL064N90BAI040 S29GL064N90BAI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA023 S29GL064N90FFA023 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90TFA043 S29GL064N90TFA043 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY7C64013C-PXC CY7C64013C-PXC Infineon Technologies Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4124LQE-S413 CY8C4124LQE-S413 Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S413T CY8C4124LQE-S413T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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BSM75GB170DN2HOSA1 Infineon Technologies BSM75GB170DN2_Eupec.pdf Description: IGBT MOD 1700V 110A 625W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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TLE49614MXTMA1 TLE49614MXTMA1 Infineon Technologies Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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S6E2C39J0AGB1000A S6E2C39J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2C38H0AGV2000A S6E2C38H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 IPSA70R1K2P7SAKMA1 Infineon Technologies Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340 Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
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62-0095PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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D2200N24TVFXPSA1 D2200N24TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
Produkt ist nicht verfügbar
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BSM15GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
Produkt ist nicht verfügbar
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IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
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BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
Produkt ist nicht verfügbar
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CY9AF111KQN-G-AVE2 download
CY9AF111KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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2+12.95 EUR
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CY9AF114NAPMC-GNE2 Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF114NAPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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2+12.23 EUR
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CY9AF141MAPMC-G-MNE2 cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller
CY9AF141MAPMC-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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2+15.58 EUR
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CY9AF154NAPMC-G-JNE2 MB9A150RA_Series.pdf
CY9AF154NAPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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2+15.58 EUR
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CY9AF114NPMC-GE1 Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF114NPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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2+16.03 EUR
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CY9AF155NPMC-G-JNE2 Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e
CY9AF155NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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Anzahl Preis
1+18.30 EUR
10+16.82 EUR
25+16.13 EUR
90+14.21 EUR
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450+12.64 EUR
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CY9AF155NAPMC-G-JNE2 MB9A150RA_Series.pdf
CY9AF155NAPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.30 EUR
10+16.82 EUR
25+16.13 EUR
90+14.21 EUR
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KTS 6027-2 KTS6027%2C29-2.pdf
KTS 6027-2
Hersteller: Infineon Technologies
Description: IC VIDEO TUNER 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Applications: Consumer Video
Supplier Device Package: PG-TSSOP-28
Control Interface: I2C, Serial
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
CY7C4041KV13-667FCXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.1V ~ 1.3V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 667 MHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSO065N03MSG INFNS16222-1.pdf?t.download=true&u=5oefqw
BSO065N03MSG
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
1094+0.44 EUR
Mindestbestellmenge: 1094
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IPW60R016CM8XKSA1
IPW60R016CM8XKSA1
Hersteller: Infineon Technologies
Description: IPW60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 97 Stücke:
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Anzahl Preis
1+20.63 EUR
30+16.70 EUR
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CY15V104QN-50SXI Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QN-50SXI
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.85 EUR
10+37.15 EUR
25+35.43 EUR
50+34.18 EUR
100+32.97 EUR
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CY15V104QSN-108SXI Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
CY15V104QSN-108SXI
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.86 EUR
10+43.35 EUR
25+41.33 EUR
94+38.58 EUR
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IPZA60R037CM8XKSA1
IPZA60R037CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.01 EUR
10+12.00 EUR
240+9.41 EUR
Mindestbestellmenge: 2
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IPZA60R016CM8XKSA1
IPZA60R016CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.70 EUR
10+20.00 EUR
240+16.75 EUR
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IMZA65R007M2HXKSA1 IMZA65R007M2H.pdf
IMZA65R007M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 349 Stücke:
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Anzahl Preis
1+49.44 EUR
30+36.56 EUR
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KIT1EDBAUXSICTOBO1
Hersteller: Infineon Technologies
Description: KIT_1EDB_AUX_SIC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB9275F, 2EDN7533B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Produkt ist nicht verfügbar
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CY7C09449PV-AC CY7C09449PV-AC.pdf
CY7C09449PV-AC
Hersteller: Infineon Technologies
Description: IC SRAM 128KBIT PAR 160TQFP
Packaging: Bag
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 50 MHz
Memory Format: SRAM
Supplier Device Package: 160-TQFP (24x24)
Memory Interface: Parallel
Memory Organization: 4K x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFP4137PBF irfp4137pbf.pdf?fileId=5546d462533600a401535629208b2002
IRFP4137PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
101+4.91 EUR
Mindestbestellmenge: 101
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FP100R12KT4PB11BPSA1 Infineon-FP100R12KT4-DS-v02_00-en_jp.pdf?fileId=db3a30433dcf2fc4013dd015eb0a0208
FP100R12KT4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO3-3
Packaging: Tray
auf Bestellung 4 Stücke:
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Anzahl Preis
1+219.14 EUR
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IPD30N03S2L10ATMA1 Infineon-IPD30N03S2L_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270bd33b66&ack=t
IPD30N03S2L10ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IPT014N10N5ATMA1 Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa
IPT014N10N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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IPT014N10N5ATMA1 Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa
IPT014N10N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.86 EUR
10+8.04 EUR
100+5.88 EUR
500+5.13 EUR
Mindestbestellmenge: 2
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CY8C4147LQE-S473T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S473T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY91F522BSEPMC1-GSE1
CY91F522BSEPMC1-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1361A-100BGC CY7C1361A_63A.pdf
CY7C1361A-100BGC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT 100MHZ 119BGA
Packaging: Bag
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+13.52 EUR
Mindestbestellmenge: 36
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CY7C1361C-100BGC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1361C-100BGC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.11 EUR
10+32.70 EUR
25+32.34 EUR
40+31.55 EUR
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PXM1310CDMG003XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXM1310CDMG003XTMA1
Hersteller: Infineon Technologies
Description: PRIMARION CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 8518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.45 EUR
10+6.45 EUR
25+5.94 EUR
100+5.39 EUR
250+5.13 EUR
500+4.97 EUR
1000+4.84 EUR
Mindestbestellmenge: 3
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IDWD30E120D7XKSA1 IDWD30E120D7_Rev1.00_12-15-23.pdf
IDWD30E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1200V 52A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.67 EUR
10+4.87 EUR
25+4.42 EUR
Mindestbestellmenge: 3
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AIMBG120R060M1XTMA1 448_AIMBG120R.pdf
AIMBG120R060M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R060M1XTMA1 448_AIMBG120R.pdf
AIMBG120R060M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.75 EUR
10+13.72 EUR
100+12.24 EUR
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CY8C24423A-24SXIT Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24SXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF6655TRPBF IRF6655%28TR%29PbF.pdf
IRF6655TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C024BV-15AXI
CY7C024BV-15AXI
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2C18L0AGL2000A download
S6E2C18L0AGL2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J334BJDESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J334BJDESE20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
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CY3205-DK PSoC%20Dev.%20Tools%20Selector%20Guide.pdf
CY3205-DK
Hersteller: Infineon Technologies
Description: CY8C26443 EVAL BRD
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: M8C
Utilized IC / Part: CY8C26443
Produkt ist nicht verfügbar
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S29GL064N90TFI020 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90TFI020
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S29GL064N90BAI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90BAI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL064N90FFA023 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FFA023
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL064N90TFA043
S29GL064N90TFA043
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY7C64013C-PXC
CY7C64013C-PXC
Hersteller: Infineon Technologies
Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4124LQE-S413
CY8C4124LQE-S413
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124LQE-S413T
CY8C4124LQE-S413T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BSM75GB170DN2HOSA1 BSM75GB170DN2_Eupec.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 637 Stücke:
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Anzahl Preis
4+147.87 EUR
Mindestbestellmenge: 4
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TLE49614MXTMA1 Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc
TLE49614MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 559 Stücke:
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Anzahl Preis
3+6.55 EUR
10+5.80 EUR
25+5.53 EUR
50+5.34 EUR
100+5.15 EUR
250+4.91 EUR
500+4.74 EUR
Mindestbestellmenge: 3
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 891 Stücke:
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Anzahl Preis
128+3.81 EUR
Mindestbestellmenge: 128
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.02 EUR
25+1.86 EUR
50+1.75 EUR
100+1.65 EUR
250+1.57 EUR
Mindestbestellmenge: 8
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S6E2C39J0AGB1000A download
S6E2C39J0AGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2C38H0AGV2000A download
S6E2C38H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPSA70R1K2P7SAKMA1 Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340
IPSA70R1K2P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
auf Bestellung 2 Stücke:
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62-0095PBF fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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D2200N24TVFXPSA1 D2200N.pdf
D2200N24TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
Produkt ist nicht verfügbar
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BSM15GD120DN2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
Produkt ist nicht verfügbar
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
10+5.44 EUR
100+3.89 EUR
500+3.73 EUR
Mindestbestellmenge: 3
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BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Hersteller: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
Produkt ist nicht verfügbar
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