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IMT40R036M2HXTMA1 IMT40R036M2HXTMA1 Infineon Technologies Infineon-IMT40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
auf Bestellung 1929 Stücke:
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10+10.31 EUR
100+7.54 EUR
500+7.37 EUR
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IMBG40R036M2HXTMA1 IMBG40R036M2HXTMA1 Infineon Technologies Infineon-IMBG40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f580a577f3344 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R036M2HXTMA1 IMBG40R036M2HXTMA1 Infineon Technologies Infineon-IMBG40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f580a577f3344 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
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100+8.18 EUR
500+8.09 EUR
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CY7C109B-15VXC CY7C109B-15VXC Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109B-15ZC CY7C109B-15ZC Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109BN-12ZXC CY7C109BN-12ZXC Infineon Technologies CY7C109BN%2CCY7C1009BN.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109B-15VC CY7C109B-15VC Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109B-20ZXC CY7C109B-20ZXC Infineon Technologies Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109B-20ZC CY7C109B-20ZC Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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cy7c109b-12vc cy7c109b-12vc Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB9DF126BPMC-GSK5E2 MB9DF126BPMC-GSK5E2 Infineon Technologies Infineon-CY9DF126_-_Atlas_CY9DF126_Series-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee7c30a4d1c54&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
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MB9DF126PMC-GSK5E2 MB9DF126PMC-GSK5E2 Infineon Technologies Infineon-CY9DF126_-_Atlas_CY9DF126_Series-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee7c30a4d1c54&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
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CY9DF566MAEEQ-GTE1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, FlexRay, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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TLE92633BQXXUMA2 TLE92633BQXXUMA2 Infineon Technologies Infineon-TLE9263-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016097f386a63984 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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25+5.3 EUR
100+4.78 EUR
250+4.55 EUR
500+4.52 EUR
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BSM10GD120DN2E3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
Produkt ist nicht verfügbar
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FS150R12N3T7B11BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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FS150R12KT4PBPSA2 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
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FS150R12N3T4PB81BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
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IGD03N120S7ATMA1 IGD03N120S7ATMA1 Infineon Technologies Infineon-IGD03N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb75870326d Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
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IGD03N120S7ATMA1 IGD03N120S7ATMA1 Infineon Technologies Infineon-IGD03N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb75870326d Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
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7+3.39 EUR
10+2.15 EUR
100+1.44 EUR
500+1.14 EUR
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S29GL01GT10FHI030 S29GL01GT10FHI030 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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TLE4262GMXUMA2 TLE4262GMXUMA2 Infineon Technologies TLE4262GMXUMA1.pdf?t.download=true&amp;u=n9mhyd Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
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TLF50241ELXUMA2 TLF50241ELXUMA2 Infineon Technologies Infineon-TLF50241EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2bb0641ee Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
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TDA38725A0000AUMA1 TDA38725A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
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TDA38725A0000AUMA1 TDA38725A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
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TDA38740A0000AUMA1 TDA38740A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38740A0000AUMA1 TDA38740A0000AUMA1 Infineon Technologies Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
auf Bestellung 150 Stücke:
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TDA38640A0000AUMA1 TDA38640A0000AUMA1 Infineon Technologies Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38640A0000AUMA1 TDA38640A0000AUMA1 Infineon Technologies Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TLF12501AUMA1 TLF12501AUMA1 Infineon Technologies Infineon-TLF12501-DataSheet-v02_11-EN.pdf?fileId=8ac78c8c83cd30810184118dac153d8b Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IRAMS12UP60A-2 IRAMS12UP60A-2 Infineon Technologies IRAMS12UP60A.pdf Description: POWER DRIVER 3 PHASE 600V MODULE
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 12 A
Voltage: 600 V
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ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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ISC055N15NM6ATMA1 ISC055N15NM6ATMA1 Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 234 Stücke:
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10+6.97 EUR
100+5.01 EUR
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CY7C1314KV18-250BZXC CY7C1314KV18-250BZXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
auf Bestellung 126 Stücke:
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10+56.47 EUR
25+53.85 EUR
40+52.54 EUR
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FS100R12N2T4BPSA1 Infineon Technologies InfineonFS100R12N2T4DSv0200EN.pdf Description: FS100R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 219 Stücke:
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3+253.02 EUR
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S25FL512SAGMFAG10 S25FL512SAGMFAG10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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TRUSTMV3SHIELDTOBO1 TRUSTMV3SHIELDTOBO1 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: TRUSTMV3SHIELDTOBO1
Packaging: Box
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
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1+48.78 EUR
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IKWH30N67PR7XKSA1 IKWH30N67PR7XKSA1 Infineon Technologies Infineon-IKWH30N67PR7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001933edc3c4d5e6a Description: IGBT TRENCH FS 670V 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 450µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 9.8Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 179 W
auf Bestellung 285 Stücke:
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IKWH40N67PR7XKSA1 IKWH40N67PR7XKSA1 Infineon Technologies IKWH40N67PR7XKSA1.pdf Description: IGBT TRENCH FS 670V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/146ns
Switching Energy: 660µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 9.8Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
auf Bestellung 181 Stücke:
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IPT025N15NM6ATMA1 IPT025N15NM6ATMA1 Infineon Technologies Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 8000 Stücke:
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2000+5.07 EUR
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IPT025N15NM6ATMA1 IPT025N15NM6ATMA1 Infineon Technologies Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 8730 Stücke:
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2+13.53 EUR
10+9.1 EUR
50+7.2 EUR
100+6.59 EUR
500+6.2 EUR
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IPP029N15NM6AKSA1 IPP029N15NM6AKSA1 Infineon Technologies Infineon-IPP029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077531a58704f Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 276µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1468 Stücke:
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50+13.54 EUR
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500+10.65 EUR
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IPF026N15NM6ATMA1 IPF026N15NM6ATMA1 Infineon Technologies Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 2000 Stücke:
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1000+5.36 EUR
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IPF026N15NM6ATMA1 IPF026N15NM6ATMA1 Infineon Technologies Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 2377 Stücke:
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2+13.8 EUR
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50+7.4 EUR
100+6.78 EUR
500+6.49 EUR
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IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB95R450PFD7ATMA1 IPB95R450PFD7ATMA1 Infineon Technologies Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405 Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 865 Stücke:
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3+7.12 EUR
10+4.66 EUR
100+3.26 EUR
500+2.67 EUR
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IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Infineon Technologies Description: IQFH36N04NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
Produkt ist nicht verfügbar
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IQFH36N04NM6ATMA1 IQFH36N04NM6ATMA1 Infineon Technologies Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
auf Bestellung 1476 Stücke:
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3+10.16 EUR
5+9.13 EUR
10+8.75 EUR
25+8.28 EUR
50+7.97 EUR
100+7.69 EUR
500+7.1 EUR
1000+6.89 EUR
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TLE92623BQXV33XUMA2 TLE92623BQXV33XUMA2 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: OPTIREG SYST BASIS CHIPS
Supplier Device Package: PG-VQFN-48-79
Current - Supply: 3.5mA
Applications: System Basis Chip
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2500 Stücke:
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2500+3.84 EUR
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IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies infineon-ipt017n10nm5lf2-datasheet-en.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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2000+6.13 EUR
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IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies infineon-ipt017n10nm5lf2-datasheet-en.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 5487 Stücke:
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2+15.24 EUR
10+10.35 EUR
100+7.59 EUR
500+7.5 EUR
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IR7304SPBF IR7304SPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY9AFA41NAPMC-G-JNE2 CY9AFA41NAPMC-G-JNE2 Infineon Technologies Description: IC MCU 32BIT 96KB 100LQFP
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1363C-133AXC CY7C1363C-133AXC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
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FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Infineon Technologies Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 7 Stücke:
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1+347.36 EUR
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S26HL512TFPBHV010 S26HL512TFPBHV010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C3445AXI-104T CY8C3445AXI-104T Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KITXMC71EVKLITEV1TOBO1 KITXMC71EVKLITEV1TOBO1 Infineon Technologies Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
auf Bestellung 18 Stücke:
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1+59.25 EUR
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EVALXMC4800PSOC6M5TOBO1 EVALXMC4800PSOC6M5TOBO1 Infineon Technologies Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
auf Bestellung 1 Stücke:
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IMT40R036M2HXTMA1 Infineon-IMT40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54
IMT40R036M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.21 EUR
10+10.31 EUR
100+7.54 EUR
500+7.37 EUR
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IMBG40R036M2HXTMA1 Infineon-IMBG40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f580a577f3344
IMBG40R036M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R036M2HXTMA1 Infineon-IMBG40R036M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f580a577f3344
IMBG40R036M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.31 EUR
10+11.11 EUR
100+8.18 EUR
500+8.09 EUR
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CY7C109B-15VXC CY7C109B%2C%20CY7C1009B.pdf
CY7C109B-15VXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109B-15ZC CY7C109B%2C%20CY7C1009B.pdf
CY7C109B-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109BN-12ZXC CY7C109BN%2CCY7C1009BN.pdf
CY7C109BN-12ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109B-15VC CY7C109B%2C%20CY7C1009B.pdf
CY7C109B-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109B-20ZXC
CY7C109B-20ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109B-20ZC CY7C109B%2C%20CY7C1009B.pdf
CY7C109B-20ZC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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cy7c109b-12vc CY7C109B%2C%20CY7C1009B.pdf
cy7c109b-12vc
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB9DF126BPMC-GSK5E2 Infineon-CY9DF126_-_Atlas_CY9DF126_Series-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee7c30a4d1c54&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB9DF126BPMC-GSK5E2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB9DF126PMC-GSK5E2 Infineon-CY9DF126_-_Atlas_CY9DF126_Series-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee7c30a4d1c54&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB9DF126PMC-GSK5E2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9DF566MAEEQ-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, FlexRay, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE92633BQXXUMA2 Infineon-TLE9263-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016097f386a63984
TLE92633BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 4963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.63 EUR
10+5.76 EUR
25+5.3 EUR
100+4.78 EUR
250+4.55 EUR
500+4.52 EUR
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BSM10GD120DN2E3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
Produkt ist nicht verfügbar
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FS150R12N3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Produkt ist nicht verfügbar
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FS150R12KT4PBPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
Produkt ist nicht verfügbar
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FS150R12N3T4PB81BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Produkt ist nicht verfügbar
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IGD03N120S7ATMA1 Infineon-IGD03N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb75870326d
IGD03N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IGD03N120S7ATMA1 Infineon-IGD03N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb75870326d
IGD03N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.39 EUR
10+2.15 EUR
100+1.44 EUR
500+1.14 EUR
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S29GL01GT10FHI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI030
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4262GMXUMA2 TLE4262GMXUMA1.pdf?t.download=true&amp;u=n9mhyd
TLE4262GMXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
auf Bestellung 10941 Stücke:
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AnzahlPrivatkunde
290+2.07 EUR
Mindestbestellmenge: 290 Stücke
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TLF50241ELXUMA2 Infineon-TLF50241EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2bb0641ee
TLF50241ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 41736 Stücke:
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AnzahlPrivatkunde
188+2.89 EUR
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TDA38725A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38725A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38725A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38725A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38740A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38740A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38740A0000AUMA1 Infineon-TDA38740A_TDA38725A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe58f9e6a7c
TDA38740A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
auf Bestellung 150 Stücke:
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AnzahlPrivatkunde
3+9.62 EUR
10+7.33 EUR
25+6.76 EUR
100+6.13 EUR
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TDA38640A0000AUMA1 Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc
TDA38640A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TDA38640A0000AUMA1 Infineon-TDA38640A-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190fe81a8fd00fc
TDA38640A0000AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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TLF12501AUMA1 Infineon-TLF12501-DataSheet-v02_11-EN.pdf?fileId=8ac78c8c83cd30810184118dac153d8b
TLF12501AUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAMS12UP60A-2 IRAMS12UP60A.pdf
IRAMS12UP60A-2
Hersteller: Infineon Technologies
Description: POWER DRIVER 3 PHASE 600V MODULE
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 12 A
Voltage: 600 V
Produkt ist nicht verfügbar
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ISC055N15NM6ATMA1 Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9
ISC055N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISC055N15NM6ATMA1 Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9
ISC055N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 234 Stücke:
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3+10.41 EUR
10+6.97 EUR
100+5.01 EUR
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CY7C1314KV18-250BZXC download
CY7C1314KV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+63.63 EUR
10+56.47 EUR
25+53.85 EUR
40+52.54 EUR
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FS100R12N2T4BPSA1 InfineonFS100R12N2T4DSv0200EN.pdf
Hersteller: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 219 Stücke:
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AnzahlPrivatkunde
3+253.02 EUR
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S25FL512SAGMFAG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFAG10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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TRUSTMV3SHIELDTOBO1 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
TRUSTMV3SHIELDTOBO1
Hersteller: Infineon Technologies
Description: TRUSTMV3SHIELDTOBO1
Packaging: Box
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+48.78 EUR
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IKWH30N67PR7XKSA1 Infineon-IKWH30N67PR7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001933edc3c4d5e6a
IKWH30N67PR7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 670V 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 450µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 9.8Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 179 W
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.58 EUR
30+3.57 EUR
120+2.9 EUR
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IKWH40N67PR7XKSA1 IKWH40N67PR7XKSA1.pdf
IKWH40N67PR7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 670V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/146ns
Switching Energy: 660µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 9.8Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 208 W
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.1 EUR
30+3.88 EUR
120+3.17 EUR
Mindestbestellmenge: 3 Stücke
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IPT025N15NM6ATMA1 Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c
IPT025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+5.07 EUR
Mindestbestellmenge: 2000 Stücke
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IPT025N15NM6ATMA1 Infineon-IPT025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077409ede701c
IPT025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 263A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 8730 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.53 EUR
10+9.1 EUR
50+7.2 EUR
100+6.59 EUR
500+6.2 EUR
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IPP029N15NM6AKSA1 Infineon-IPP029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077531a58704f
IPP029N15NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 276µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.97 EUR
50+13.54 EUR
100+11.54 EUR
500+10.65 EUR
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IPF026N15NM6ATMA1 Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046
IPF026N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.36 EUR
Mindestbestellmenge: 1000 Stücke
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IPF026N15NM6ATMA1 Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046
IPF026N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 2377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.8 EUR
10+9.33 EUR
50+7.4 EUR
100+6.78 EUR
500+6.49 EUR
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IPB95R450PFD7ATMA1 Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405
IPB95R450PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB95R450PFD7ATMA1 Infineon-IPB95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb905600405
IPB95R450PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.12 EUR
10+4.66 EUR
100+3.26 EUR
500+2.67 EUR
Mindestbestellmenge: 3 Stücke
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IQFH36N04NM6ATMA1
IQFH36N04NM6ATMA1
Hersteller: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
Produkt ist nicht verfügbar
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IQFH36N04NM6ATMA1
IQFH36N04NM6ATMA1
Hersteller: Infineon Technologies
Description: IQFH36N04NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 656A (Tc)
Rds On (Max) @ Id, Vgs: 0.36mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 309 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 20 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.16 EUR
5+9.13 EUR
10+8.75 EUR
25+8.28 EUR
50+7.97 EUR
100+7.69 EUR
500+7.1 EUR
1000+6.89 EUR
Mindestbestellmenge: 3 Stücke
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TLE92623BQXV33XUMA2 Infineon-TLE9262-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Supplier Device Package: PG-VQFN-48-79
Current - Supply: 3.5mA
Applications: System Basis Chip
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.84 EUR
Mindestbestellmenge: 2500 Stücke
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IPT017N10NM5LF2ATMA1 infineon-ipt017n10nm5lf2-datasheet-en.pdf
IPT017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+6.13 EUR
Mindestbestellmenge: 2000 Stücke
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IPT017N10NM5LF2ATMA1 infineon-ipt017n10nm5lf2-datasheet-en.pdf
IPT017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 5487 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.24 EUR
10+10.35 EUR
100+7.59 EUR
500+7.5 EUR
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IR7304SPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY9AFA41NAPMC-G-JNE2
CY9AFA41NAPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB 100LQFP
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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CY7C1363C-133AXC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1363C-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 144 Stücke
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FF450R17ME4PBOSA1 Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e
FF450R17ME4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+347.36 EUR
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S26HL512TFPBHV010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C3445AXI-104T download
CY8C3445AXI-104T
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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KITXMC71EVKLITEV1TOBO1 Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b
KITXMC71EVKLITEV1TOBO1
Hersteller: Infineon Technologies
Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+59.25 EUR
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EVALXMC4800PSOC6M5TOBO1 Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c
EVALXMC4800PSOC6M5TOBO1
Hersteller: Infineon Technologies
Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+470.17 EUR
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