Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (127299) > Seite 732 nach 2122
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IPD020N03LF2SATMA1 | Infineon Technologies |
Description: IPD020N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FF55MR12W1M1HB11BPSA1 | Infineon Technologies |
Description: EASYDUAL MODULE WITH COOLSIC TREPackaging: Tray Vgs(th) (Max) @ Id: 5.15V @ 6mA FET Feature: Silicon Carbide (SiC) Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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CY15V104QN-20LPXI | Infineon Technologies |
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFNDigiKey Programmable: Not Verified Memory Organization: 512K x 8 Memory Interface: SPI Supplier Device Package: 8-GQFN (3.23x3.28) Memory Format: FRAM Clock Frequency: 20 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 8-UQFN Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FF750R17ME7DPB11BPSA1 | Infineon Technologies |
Description: FF750R17ME7DPB11BPSA1Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V Current - Collector Cutoff (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 650 A IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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WLC151568LDXSTXUMA1 | Infineon Technologies |
Description: TYPE-C - EMERGING APP.Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 85mA Supplier Device Package: 68-QFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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WLC151568LDXSXQMA1 | Infineon Technologies |
Description: TYPE-C - EMERGING APP.Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 85mA Supplier Device Package: 68-QFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 840 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP023N03LF2SAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 75A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO220-3-U05 Vgs(th) (Max) @ Id: 2.35V @ 60µA Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CLED16-48PVXI | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48SSOPSupplier Device Package: 48-SSOP Core Processor: M8C Applications: HB LED Controller Program Memory Type: FLASH (32kB) Controller Series: CY8CLED Voltage - Supply: 3V ~ 5.25V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I2C, SPI, UART/USART Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tube DigiKey Programmable: Not Verified Number of I/O: 44 |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDWD40G120C5XKSA2 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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AUIRFR4615TRL | Infineon Technologies |
Description: MOSFET N-CH 150V 33A DPAKQualification: AEC-Q101 Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FF900R12ME7WBPSA1 | Infineon Technologies |
Description: FF900R12ME7WBPSA1Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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REFCAV250KMT7INVTOBO1 | Infineon Technologies |
Description: REFCAV250KMT7INVTOBO1Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: FF900R12ME7 Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SHIELDTLE9185V33TOBO1 | Infineon Technologies |
Description: THIS EVALUATION BOARD COMES WITHPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: TLE9185 Platform: Arduino |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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SHIELDTLE9185TOBO1 | Infineon Technologies |
Description: THIS EVALUATION BOARD COMES WITH Type: Power Management Function: Motor Controller/Driver Packaging: Bulk Platform: Arduino Utilized IC / Part: TLE9185 Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE94112ESSHIELDTOBO1 | Infineon Technologies |
Description: TLE94112ES_SHIELDPlatform: Arduino Utilized IC / Part: TLE94112EL Contents: Board(s) Type: Power Management Function: Motor Controller/Driver Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IMBG65R020M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IMBG65R020M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETSupplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 9.5mA FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Power Dissipation (Max): 326W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V |
auf Bestellung 508 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R015M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R015M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
auf Bestellung 1435 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRSM636-015MBTR | Infineon Technologies |
Description: MODULES POWER DRIVERSPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SIGC28T65EX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600VCurrent - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A IGBT Type: Trench Field Stop Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE4971A050T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 24mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE4971A075T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE4971A120T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 10mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 120A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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D1461S45TXPSA1 | Infineon Technologies |
Description: DIODE STANDARD 1720A BGD10026K1Packaging: Tray Package / Case: DO-200, Variant Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1720A Supplier Device Package: BG-D10026K-1 Operating Temperature - Junction: -40°C ~ 140°C Current - Reverse Leakage @ Vr: 200 mA @ 4500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ICE5QR4780BG1XUMA1 | Infineon Technologies |
Description: ICE5QR4780BG1XUMA1 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ICE5QR4780BG1XUMA1 | Infineon Technologies |
Description: ICE5QR4780BG1XUMA1 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY7C1370KV25-167AXCT | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY7C1370D-167AXCB | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPPackaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 1151 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYT4BFBDJDQ0BZSGSXQLA1 | Infineon Technologies |
Description: IC MCUPackaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 960 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SAK-TC275TC-64F200W DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPEEPROM Size: 24K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 424K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Supplier Device Package: PG-LQFP-176-22 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR, Sigma-Delta Core Processor: TriCore™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IAUCN08S7L110ATMA1 | Infineon Technologies |
Description: IAUCN08S7L110ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IAUCN08S7L110ATMA1 | Infineon Technologies |
Description: IAUCN08S7L110ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3940 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN10S7L180ATMA1 | Infineon Technologies |
Description: IAUCN10S7L180ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IAUCN10S7L180ATMA1 | Infineon Technologies |
Description: IAUCN10S7L180ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3875 Stücke: Lieferzeit 10-14 Tag (e) |
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| CG10055AFT | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4971A050N5E0002XUMA1 | Infineon Technologies |
Description: CURRENT SENS ATV Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CY9BF466LQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 64QFNPackaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY9BF466LPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (12x12) Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8C5466LTI-063 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFNDigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 2x12b; D/A 4x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 64KB (64K x 8) Speed: 67MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray |
Produkt ist nicht verfügbar |
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LINDEMOBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE7257SJPackaging: Bulk Function: CAN Transceiver Type: Interface Contents: Board(s) Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G Secondary Attributes: On-Board LEDs, Test Points Embedded: No |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IRSM506-076PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4A 23SOPSupplier Device Package: 23-SOP Voltage - Load: 480V (Max) Technology: IGBT Current - Peak Output: 15A Current - Output / Channel: 4A Applications: AC Motors Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module Features: Bootstrap Circuit Packaging: Tube Load Type: Inductive Fault Protection: UVLO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ICE5AR4780BZS1XKLA1 | Infineon Technologies |
Description: ICE5AR4780BZS1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 27.5 W |
auf Bestellung 1978 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C64215-28PVXIT | Infineon Technologies |
Description: IC CNTRLR USB FS 28SSOPPackage / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 22 Supplier Device Package: 28-SSOP Core Processor: M8C Applications: USB Microcontroller Program Memory Type: FLASH (16kB) Controller Series: CY7C642xx Voltage - Supply: 3V ~ 5.25V Operating Temperature: -40°C ~ 85°C RAM Size: 1K x 8 Interface: I2C, USB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8CKIT4700SPLUSTOBO1 | Infineon Technologies |
Description: CY8CKIT-4700S-PLUSPackaging: Tray Interface: I2C, SPI, UART, USB Embedded: Yes, MCU Utilized IC / Part: PSoC 4700S Sensor Type: Proximity, Inductive Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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DD1600S33HE4BPSA1 | Infineon Technologies |
Description: IHV IHM TPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1600A Supplier Device Package: AG-IHVB130-3 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ISC060N06NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CYW920829B0M2P4TAI100-ES | Infineon Technologies |
Description: AIROC CYW20829B0-P4TAI100 MODULEPackaging: Box Type: Transceiver; Bluetooth® 5.x (BLE) Contents: Board(s), Cable(s), Accessories Utilized IC / Part: CYW20829 |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| IM06B15AC1SXKMA1 | Infineon Technologies |
Description: CIPOS MINI Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 280 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IM06B20AC1SXKMA1 | Infineon Technologies |
Description: CIPOS MINI Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 280 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IM06B30AC1SXKMA1 | Infineon Technologies |
Description: CIPOS MINI Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 280 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IM06B50GC1XKMA1 | Infineon Technologies |
Description: IGBT IPM 600V 35A 24-PWRDIP MODPackaging: Tube Package / Case: 24-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 35 A Voltage: 600 V |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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IQDH35N03LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IQDH35N03LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V |
auf Bestellung 3700 Stücke: Lieferzeit 10-14 Tag (e) |
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IQDH35N03LM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IQDH35N03LM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V |
auf Bestellung 4955 Stücke: Lieferzeit 10-14 Tag (e) |
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IMM102T056MXUMA1 | Infineon Technologies |
Description: IMOTIONPackaging: Bulk Package / Case: 38-PowerVQFN Mounting Type: Surface Mount Function: Driver Current - Output: 4A Interface: PWM Operating Temperature: -40°C ~ 115°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: PG-IQFN-38-1 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS150R07N3E4BOSA1 | Infineon Technologies |
Description: FS150R07 - IGBT MODULEPackaging: Bulk |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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FP75R12N2T4BOSA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER ECONO Packaging: Bulk |
auf Bestellung 727 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-XE164GN-24F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 192KB FLASH 100LQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 192KB (192K x 8) RAM Size: 26K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 11x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 75 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD020N03LF2SATMA1 |
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Hersteller: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF55MR12W1M1HB11BPSA1 |
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Hersteller: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.8 EUR |
| CY15V104QN-20LPXI |
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Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 490 Stücke
Im Einkaufswagen
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| FF750R17ME7DPB11BPSA1 |
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Hersteller: Infineon Technologies
Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 470.78 EUR |
| WLC151568LDXSTXUMA1 |
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Hersteller: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WLC151568LDXSXQMA1 |
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Hersteller: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 840 Stücke
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| IPP023N03LF2SAKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 12+ | 1.82 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 0.95 EUR |
| CY8CLED16-48PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.2 EUR |
| 10+ | 23.97 EUR |
| 30+ | 22.15 EUR |
| 120+ | 20.52 EUR |
| IDWD40G120C5XKSA2 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFR4615TRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Description: MOSFET N-CH 150V 33A DPAK
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| REFCAV250KMT7INVTOBO1 |
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Hersteller: Infineon Technologies
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SHIELDTLE9185V33TOBO1 |
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Hersteller: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 107.67 EUR |
| SHIELDTLE9185TOBO1 |
Hersteller: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Platform: Arduino
Utilized IC / Part: TLE9185
Contents: Board(s)
Description: THIS EVALUATION BOARD COMES WITH
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Platform: Arduino
Utilized IC / Part: TLE9185
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 110.29 EUR |
| TLE94112ESSHIELDTOBO1 |
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Hersteller: Infineon Technologies
Description: TLE94112ES_SHIELD
Platform: Arduino
Utilized IC / Part: TLE94112EL
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Description: TLE94112ES_SHIELD
Platform: Arduino
Utilized IC / Part: TLE94112EL
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Produkt ist nicht verfügbar
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| IMBG65R020M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IMBG65R020M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Power Dissipation (Max): 326W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Power Dissipation (Max): 326W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.82 EUR |
| 10+ | 20.28 EUR |
| 100+ | 17.05 EUR |
| IMBG65R015M2HXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 17.42 EUR |
| IMBG65R015M2HXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.28 EUR |
| 10+ | 24.36 EUR |
| 100+ | 21.32 EUR |
| IRSM636-015MBTR |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| SIGC28T65EX1SA1 |
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Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TLE4971A050T5E0001XUMA1 |
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Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE4971A075T5E0001XUMA1 |
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Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE4971A120T5E0001XUMA1 |
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Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| D1461S45TXPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 1720A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
Description: DIODE STANDARD 1720A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
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| ICE5QR4780BG1XUMA1 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CY7C1370KV25-167AXCT |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY7C1370D-167AXCB |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 87.62 EUR |
| CYT4BFBDJDQ0BZSGSXQLA1 |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
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| SAK-TC275TC-64F200W DC |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
EEPROM Size: 24K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 424K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Processor: TriCore™
Description: IC MCU 32BIT 4MB FLASH 176LQFP
EEPROM Size: 24K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 424K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Processor: TriCore™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUCN08S7L110ATMA1 |
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Hersteller: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| IAUCN08S7L110ATMA1 |
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Hersteller: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 50+ | 1.46 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.02 EUR |
| IAUCN10S7L180ATMA1 |
Hersteller: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
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| IAUCN10S7L180ATMA1 |
Hersteller: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.84 EUR |
| 12+ | 1.8 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.83 EUR |
| TLE4971A050N5E0002XUMA1 |
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| CY9BF466LQN-G-AVE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
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| CY9BF466LPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
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| CY8C5466LTI-063 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
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| LINDEMOBOARDTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 171.41 EUR |
| IRSM506-076PA |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23SOP
Supplier Device Package: 23-SOP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Description: IC HALF BRIDGE DRIVER 4A 23SOP
Supplier Device Package: 23-SOP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
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| ICE5AR4780BZS1XKLA1 |
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Hersteller: Infineon Technologies
Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
auf Bestellung 1978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 50+ | 1.69 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| CY7C64215-28PVXIT |
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Hersteller: Infineon Technologies
Description: IC CNTRLR USB FS 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 22
Supplier Device Package: 28-SSOP
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
Description: IC CNTRLR USB FS 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 22
Supplier Device Package: 28-SSOP
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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| CY8CKIT4700SPLUSTOBO1 |
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Hersteller: Infineon Technologies
Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Embedded: Yes, MCU
Utilized IC / Part: PSoC 4700S
Sensor Type: Proximity, Inductive
Contents: Board(s)
Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Embedded: Yes, MCU
Utilized IC / Part: PSoC 4700S
Sensor Type: Proximity, Inductive
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 636.84 EUR |
| DD1600S33HE4BPSA1 |
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Hersteller: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1600A
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1600A
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA
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| ISC060N06NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Produkt ist nicht verfügbar
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| CYW920829B0M2P4TAI100-ES |
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Hersteller: Infineon Technologies
Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 151.53 EUR |
| IM06B15AC1SXKMA1 |
Produkt ist nicht verfügbar
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| IM06B20AC1SXKMA1 |
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| IM06B30AC1SXKMA1 |
Produkt ist nicht verfügbar
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| IM06B50GC1XKMA1 |
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Hersteller: Infineon Technologies
Description: IGBT IPM 600V 35A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 35 A
Voltage: 600 V
Description: IGBT IPM 600V 35A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 35 A
Voltage: 600 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.38 EUR |
| 14+ | 27.08 EUR |
| 112+ | 21.74 EUR |
| IQDH35N03LM5CGSCATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
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| IQDH35N03LM5CGSCATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 3700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.98 EUR |
| 10+ | 5.94 EUR |
| 100+ | 4.21 EUR |
| 500+ | 3.65 EUR |
| IQDH35N03LM5SCATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQDH35N03LM5SCATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.65 EUR |
| 10+ | 5.71 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.51 EUR |
| IMM102T056MXUMA1 |
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Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IMOTION
Packaging: Bulk
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 13.57 EUR |
| FS150R07N3E4BOSA1 |
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auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 179.15 EUR |
| FP75R12N2T4BOSA1 |
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 248 EUR |
| SAK-XE164GN-24F80L AA |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH






































