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TT500N18KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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TT570N16KOFXPSA1 Infineon Technologies Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IM72D128VV01XTMA1 IM72D128VV01XTMA1 Infineon Technologies Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8 Description: MIC SDM DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
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7+2.82 EUR
10+2.69 EUR
25+2.53 EUR
50+2.43 EUR
100+2.33 EUR
500+2.13 EUR
1000+2.06 EUR
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IMLT65R033M2HXTMA1 IMLT65R033M2HXTMA1 Infineon Technologies Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 IPTC025N15NM6ATMA1 Infineon Technologies Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 IPTC025N15NM6ATMA1 Infineon Technologies Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
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IMWH170R1K0M1XKSA1 IMWH170R1K0M1XKSA1 Infineon Technologies Infineon-IMWH170R1K0M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bb0031500 Description: IMWH170R1K0M1XKSA1
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.2mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V
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30+5.03 EUR
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IMWH170R650M1XKSA1 IMWH170R650M1XKSA1 Infineon Technologies Infineon-IMWH170R650M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6c06fe151a Description: IMWH170R650M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V
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TLE4973R120T5US0010XUMA1 TLE4973R120T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973R120T5US0010XUMA1 TLE4973R120T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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500+6.6 EUR
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EVAL6ED2742S01QM1TOBO1 Infineon Technologies Description: EVALUATION BOARD FOR 160 V THREE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6ED2742S01Q
Primary Attributes: 24V Operating Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
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IPP60R016CM8XKSA1 IPP60R016CM8XKSA1 Infineon Technologies Infineon-IPP60R016CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8e21f7f33cd1 Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
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500+8.15 EUR
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BBY 59-02V E6327 BBY 59-02V E6327 Infineon Technologies BBY_59_Apr2007.pdf Description: DIODE VARACTOR 15V SGL PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 7.8pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 4.6
Produkt ist nicht verfügbar
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CY7C1265KV18-450BZXC CY7C1265KV18-450BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1262XV18-450BZXC CY7C1262XV18-450BZXC Infineon Technologies Infineon-CY7C1262XV18_CY7C1264XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec27b0d376c&utm_source=cypress&utm_medium=referral&utm_ca Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1268KV18-450BZXC CY7C1268KV18-450BZXC Infineon Technologies CY7C12%2868%2C70%29KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C12681KV18-450BZXC CY7C12681KV18-450BZXC Infineon Technologies CY7C126x1%2C127x1KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2564XV18-450BZXC CY7C2564XV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-450BZC CY7C1570KV18-450BZC Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1545KV18-450BZC CY7C1545KV18-450BZC Infineon Technologies CY7C1541%2C43%2C56%2C45_RevF.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IPB022N12NM6ATMA1 IPB022N12NM6ATMA1 Infineon Technologies Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
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IPB022N12NM6ATMA1 IPB022N12NM6ATMA1 Infineon Technologies Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
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100+6.38 EUR
500+5.64 EUR
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IPB029N15NM6ATMA1 IPB029N15NM6ATMA1 Infineon Technologies Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
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IPB029N15NM6ATMA1 IPB029N15NM6ATMA1 Infineon Technologies Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
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BGF 200 E6327 BGF 200 E6327 Infineon Technologies BGF200.pdf Description: IC VOLUME CONTROL S-WLP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Mounting Type: Surface Mount
Function: Volume Control
Specifications: 6GHz
Applications: Audio Systems
Supplier Device Package: S-WLP-8
Number of Channels: 2
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S6E1A11C0AGF20000 S6E1A11C0AGF20000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 56KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BA 779 E6327 BA 779 E6327 Infineon Technologies BA779.pdf Description: RF DIODE PIN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Current - Max: 50 mA
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PVI5033RPBFHKLA1 PVI5033RPBFHKLA1 Infineon Technologies pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943 Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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PVI5033RSTPBFHUMA1 Infineon Technologies pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943 Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 8V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
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BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1 Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
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CY7C199C-20VC CY7C199C-20VC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL256LAGMFI000 S25FL256LAGMFI000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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480+5.03 EUR
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
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TLE4943CXAMA1 Infineon Technologies Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6 Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
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IPB70P04P409ATMA1 IPB70P04P409ATMA1 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IPB70P04P409ATMA2 IPB70P04P409ATMA2 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
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SP49T0512XTMA1 SP49T0512XTMA1 Infineon Technologies Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f Description: TPMS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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TLD5098EPB2GEVALKITTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 30V ~ 54V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPB2BEVALKITTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 16V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPSEPICEVALTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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CY7C1518AV18-250BZC CY7C1518AV18-250BZC Infineon Technologies CY7C1518%2C20AV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518KV18-250BZI CY7C1518KV18-250BZI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518KV18-250BZI CY7C1518KV18-250BZI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518V18-200BZC CY7C1518V18-200BZC Infineon Technologies CY7C15%2816%2C18%2C20%2C27%29V18_8.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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AUIRF9952QTR AUIRF9952QTR Infineon Technologies AUIRF9952Q.pdf Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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CY7C199C-15ZC CY7C199C-15ZC Infineon Technologies CY7C199C%20RevC.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLS820F3ELV33XUMA1 TLS820F3ELV33XUMA1 Infineon Technologies Infineon-TLS820F3ELV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189dafdc6263c11 Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
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CYPD3172P-24LQXQT CYPD3172P-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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CYPD3173P-24LQXQT CYPD3173P-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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FS150R12KT4PB11BPSA1 FS150R12KT4PB11BPSA1 Infineon Technologies Infineon-FS150R12KT4-DS-v02_01-en_jp.pdf?fileId=db3a30433df41259013df438b6d4004c Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Tray
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CYT4DNJBRCQ1BZSGST CYT4DNJBRCQ1BZSGST Infineon Technologies Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
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CYT4DNJBRCQ1BZSGST CYT4DNJBRCQ1BZSGST Infineon Technologies Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
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10+68.55 EUR
25+64.2 EUR
100+59.42 EUR
250+57.14 EUR
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CY95F562KNPFT-G-UNE2 CY95F562KNPFT-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus-UART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS8403 AUIRFS8403 Infineon Technologies IRSDS18668-1.pdf?t.download=true&u=5oefqw Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
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AUIRFS3806 AUIRFS3806 Infineon Technologies auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1 Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS3806 AUIRFS3806 Infineon Technologies auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1 Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS3607 AUIRFS3607 Infineon Technologies auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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IRGSL4640DPBF IRGSL4640DPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
auf Bestellung 200 Stücke:
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109+4.18 EUR
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IRGSL4062DPBF IRGSL4062DPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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TT500N18KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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TT570N16KOFXPSA1 Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IM72D128VV01XTMA1 Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8
IM72D128VV01XTMA1
Hersteller: Infineon Technologies
Description: MIC SDM DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
auf Bestellung 2415 Stücke:
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6+3.19 EUR
7+2.82 EUR
10+2.69 EUR
25+2.53 EUR
50+2.43 EUR
100+2.33 EUR
500+2.13 EUR
1000+2.06 EUR
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IMLT65R033M2HXTMA1 Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48
IMLT65R033M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R026M2HXTMA1 Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b
IMLT65R026M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021
IPTC025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021
IPTC025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.77 EUR
10+7.99 EUR
100+6.11 EUR
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IMWH170R1K0M1XKSA1 Infineon-IMWH170R1K0M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bb0031500
IMWH170R1K0M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R1K0M1XKSA1
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.2mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V
auf Bestellung 173 Stücke:
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3+7.3 EUR
10+5.55 EUR
30+5.03 EUR
90+4.65 EUR
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IMWH170R650M1XKSA1 Infineon-IMWH170R650M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6c06fe151a
IMWH170R650M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R650M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V
auf Bestellung 127 Stücke:
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2+9.31 EUR
30+5.81 EUR
120+5.14 EUR
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TLE4973R120T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973R120T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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2+9.15 EUR
5+8.24 EUR
10+7.9 EUR
25+7.49 EUR
50+7.21 EUR
100+6.96 EUR
500+6.6 EUR
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EVAL6ED2742S01QM1TOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR 160 V THREE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6ED2742S01Q
Primary Attributes: 24V Operating Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IPP60R016CM8XKSA1 Infineon-IPP60R016CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8e21f7f33cd1
IPP60R016CM8XKSA1
Hersteller: Infineon Technologies
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 674 Stücke:
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Anzahl Preis
2+16.56 EUR
50+9.3 EUR
100+8.6 EUR
500+8.15 EUR
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BBY 59-02V E6327 BBY_59_Apr2007.pdf
BBY 59-02V E6327
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 15V SGL PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 7.8pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 4.6
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CY7C1265KV18-450BZXC download
CY7C1265KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1262XV18-450BZXC Infineon-CY7C1262XV18_CY7C1264XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec27b0d376c&utm_source=cypress&utm_medium=referral&utm_ca
CY7C1262XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1268KV18-450BZXC CY7C12%2868%2C70%29KV18.pdf
CY7C1268KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+102.44 EUR
Mindestbestellmenge: 5
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CY7C12681KV18-450BZXC CY7C126x1%2C127x1KV18.pdf
CY7C12681KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+102.44 EUR
Mindestbestellmenge: 5
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CY7C2564XV18-450BZXC download
CY7C2564XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+369.69 EUR
Mindestbestellmenge: 2
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CY7C1570KV18-450BZC CY7C1568%2C70KV18.pdf
CY7C1570KV18-450BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+349.98 EUR
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CY7C1545KV18-450BZC CY7C1541%2C43%2C56%2C45_RevF.pdf
CY7C1545KV18-450BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 1847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+359.22 EUR
Mindestbestellmenge: 2
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IPB022N12NM6ATMA1 Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e
IPB022N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
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IPB022N12NM6ATMA1 Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e
IPB022N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.81 EUR
10+8.71 EUR
100+6.38 EUR
500+5.64 EUR
Mindestbestellmenge: 2
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IPB029N15NM6ATMA1 Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053
IPB029N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Produkt ist nicht verfügbar
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IPB029N15NM6ATMA1 Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053
IPB029N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.67 EUR
10+10.13 EUR
100+8.1 EUR
500+7.78 EUR
Mindestbestellmenge: 2
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BGF 200 E6327 BGF200.pdf
BGF 200 E6327
Hersteller: Infineon Technologies
Description: IC VOLUME CONTROL S-WLP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Mounting Type: Surface Mount
Function: Volume Control
Specifications: 6GHz
Applications: Audio Systems
Supplier Device Package: S-WLP-8
Number of Channels: 2
Produkt ist nicht verfügbar
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S6E1A11C0AGF20000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A11C0AGF20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BA 779 E6327 BA779.pdf
BA 779 E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Current - Max: 50 mA
Produkt ist nicht verfügbar
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PVI5033RPBFHKLA1 pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943
PVI5033RPBFHKLA1
Hersteller: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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PVI5033RSTPBFHUMA1 pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943
Hersteller: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 8V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
Produkt ist nicht verfügbar
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BSC097N06NSTATMA1 Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1
BSC097N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 16939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
614+0.82 EUR
Mindestbestellmenge: 614
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CY7C199C-20VC CY7C199C%20RevB.pdf
CY7C199C-20VC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFI000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFI000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.93 EUR
10+6.15 EUR
25+5.87 EUR
40+5.73 EUR
80+5.53 EUR
240+5.22 EUR
480+5.03 EUR
Mindestbestellmenge: 3
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XMC4104Q48F128ABXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4104Q48F128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4943CXAMA1 Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6
Hersteller: Infineon Technologies
Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
Produkt ist nicht verfügbar
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IPB70P04P409ATMA1 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
IPB70P04P409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB70P04P409ATMA2 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
IPB70P04P409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Produkt ist nicht verfügbar
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SP49T0512XTMA1 Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f
SP49T0512XTMA1
Hersteller: Infineon Technologies
Description: TPMS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD5098EPB2GEVALKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 30V ~ 54V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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TLD5098EPB2BEVALKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 16V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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TLD5098EPSEPICEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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CY7C1518AV18-250BZC CY7C1518%2C20AV18.pdf
CY7C1518AV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1518KV18-250BZI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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Anzahl Preis
3+194.43 EUR
Mindestbestellmenge: 3
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CY7C1518KV18-250BZI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518V18-200BZC CY7C15%2816%2C18%2C20%2C27%29V18_8.pdf
CY7C1518V18-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 98 Stücke:
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Anzahl Preis
2+253.87 EUR
Mindestbestellmenge: 2
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AUIRF9952QTR AUIRF9952Q.pdf
AUIRF9952QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C199C-15ZC CY7C199C%20RevC.pdf
CY7C199C-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS820F3ELV33XUMA1 Infineon-TLS820F3ELV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189dafdc6263c11
TLS820F3ELV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
auf Bestellung 2489 Stücke:
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Anzahl Preis
6+2.96 EUR
10+2.09 EUR
25+1.88 EUR
100+1.64 EUR
250+1.53 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 6
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CYPD3172P-24LQXQT Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD3172P-24LQXQT
Hersteller: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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Anzahl Preis
7+2.8 EUR
10+2.05 EUR
25+1.87 EUR
100+1.66 EUR
250+1.57 EUR
500+1.51 EUR
1000+1.46 EUR
Mindestbestellmenge: 7
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CYPD3173P-24LQXQT Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD3173P-24LQXQT
Hersteller: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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FS150R12KT4PB11BPSA1 Infineon-FS150R12KT4-DS-v02_01-en_jp.pdf?fileId=db3a30433df41259013df438b6d4004c
FS150R12KT4PB11BPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Tray
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Anzahl Preis
1+179.96 EUR
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CYT4DNJBRCQ1BZSGST
CYT4DNJBRCQ1BZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
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Anzahl Preis
700+55.19 EUR
Mindestbestellmenge: 700
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CYT4DNJBRCQ1BZSGST
CYT4DNJBRCQ1BZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
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Anzahl Preis
1+85.94 EUR
10+68.55 EUR
25+64.2 EUR
100+59.42 EUR
250+57.14 EUR
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CY95F562KNPFT-G-UNE2
CY95F562KNPFT-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus-UART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS8403 IRSDS18668-1.pdf?t.download=true&u=5oefqw
AUIRFS8403
Hersteller: Infineon Technologies
Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
160+2.86 EUR
Mindestbestellmenge: 160
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AUIRFS3806 auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1
AUIRFS3806
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 676 Stücke:
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Anzahl Preis
322+1.57 EUR
Mindestbestellmenge: 322
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AUIRFS3806 auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1
AUIRFS3806
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS3607 auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf
AUIRFS3607
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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IRGSL4640DPBF IRGx4640D%28-E%29PbF.pdf
IRGSL4640DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
109+4.18 EUR
Mindestbestellmenge: 109
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IRGSL4062DPBF IRGS%28SL%294062DPbF.pdf
IRGSL4062DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
auf Bestellung 1283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.65 EUR
Mindestbestellmenge: 124
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