Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149673) > Seite 727 nach 2495
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IRFZ46ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
auf Bestellung 3616 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC110N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 35µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V |
auf Bestellung 4652 Stücke: Lieferzeit 10-14 Tag (e) |
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DZ1100N22KHPSA2 | Infineon Technologies |
Description: DIODE GP 2.2KV 1100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Current - Reverse Leakage @ Vr: 80 mA @ 2200 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7440GPBF | Infineon Technologies |
Description: MOSFET N CH 40V 120A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFS4610 | Infineon Technologies |
Description: MOSFET N-CH 100V 73A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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CY7C25632KV18-500BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 500 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29AS016J70BHI043 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
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S29GL064S70BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL064S90FHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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IDD09SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 9A PGTO2523Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
Produkt ist nicht verfügbar |
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CY7C13451G-100BZXE | Infineon Technologies |
Description: IC SRAM 4MBIT PAR 165FBGAPackaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4PH50SXKMA1 | Infineon Technologies |
Description: DISCRETE SWITCHES Packaging: Tube |
Produkt ist nicht verfügbar |
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CHL8325A-03CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-902 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I2C, PMBus, SMBus Output Phases: 5 Clock Sync: No Number of Outputs: 5 |
Produkt ist nicht verfügbar |
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FF225R12ME4PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 450A 20MWPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Cut Tape (CT) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALFFXMR20KM1HDRTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR FF3MR20KM1HPackaging: Box Function: MOSFET Type: Power Management Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: Yes, MCU Secondary Attributes: On-Board LEDs Contents: Board(s) |
Produkt ist nicht verfügbar |
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FF4MR12W2M1HB11BPSA1 | Infineon Technologies |
Description: SIC 2N-CH 1200V 170A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Supplier Device Package: Module |
Produkt ist nicht verfügbar |
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FF75R12W1T7EB11BPSA1 | Infineon Technologies |
Description: EASY STANDARDPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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CY15V108QN-20LPXI | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFNPackaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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CY15V108QI-20LPXC | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFNPackaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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ESD8V0L1B-02LRH E6433 | Infineon Technologies |
Description: TVS DIODE 14VWM 21VC TSLP-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V (Typ) Voltage - Clamping (Max) @ Ipp: 21V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
Produkt ist nicht verfügbar |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S2L09ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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IM240M6Z1BALMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 8.9W 23SOPPackaging: Tube Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A NTC Thermistor: Yes Supplier Device Package: 23-SOP Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 8.9 W Current - Collector Cutoff (Max): 40 µA |
Produkt ist nicht verfügbar |
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IR2011PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A DigiKey Programmable: Not Verified |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247LTQ-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68VFQFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 1x12b SAR; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247BZI-L479 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLSH 124VFBGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b; D/A 2x7b, 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 98 DigiKey Programmable: Not Verified |
auf Bestellung 1240 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247FNI-BL493T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68WLCSPPackaging: Tape & Reel (TR) Package / Case: 68-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 68-WLCSP (3.52x3.91) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247FNI-BL493T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68WLCSPPackaging: Cut Tape (CT) Package / Case: 68-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 68-WLCSP (3.52x3.91) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247AZA-M475T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247AZA-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247LWA-M484T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 56VFQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247LWA-M484 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 56VFQFN Packaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247AZA-M483 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 48-TQFP (7x7) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247AZS-M475T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4247AZS-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4247LWS-M484T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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CY8C4247AZS-M483 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TT250N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RAATMA2 | Infineon Technologies |
Description: IGBT TRENCH 600V 12A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/127ns Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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CY22050KFI | Infineon Technologies |
Description: IC CLOCK GEN PROG 16-TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 150MHz, 166.6MHz Type: Clock Generator, Fanout Distribution Input: LVCMOS, LVTTL, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V, 3.3V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22050KZXC-149 | Infineon Technologies |
Description: IC CLOCK GENERATORPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP DigiKey Programmable: Not Verified |
auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22050KZXC-135 | Infineon Technologies |
Description: IC CLOCK GENERATORPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP DigiKey Programmable: Not Verified |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22050FC | Infineon Technologies |
Description: CLOCK SYNTH FLASH 1-PLL 16-TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency - Max: 200MHz Type: Clock Generator Input: Crystal or Other Voltage - Supply: 3.3V Supplier Device Package: 16-TSSOP DigiKey Programmable: Verified |
auf Bestellung 4644 Stücke: Lieferzeit 10-14 Tag (e) |
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CY22050KZXI-133 | Infineon Technologies |
Description: IC CLOCK GENERATORPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP DigiKey Programmable: Not Verified |
auf Bestellung 7203 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY22050ZXC-126 | Infineon Technologies |
Description: IC CLOCK GEN PROG 16-TSSOP Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 200MHz Type: Clock Generator Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V, 3.135V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 |
auf Bestellung 502 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR 192 B6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR 191T E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
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BCR 199T E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V 0.07A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR 199L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSLP-3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR 191F E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSFP-3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
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CY8C6148BZI-S2F44T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGA Packaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
Produkt ist nicht verfügbar |
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BTS700151ESPXUMA2 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: USB Switch Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.7mOhm Input Type: Non-Inverting Voltage - Load: 4.1V ~ 28V Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V Current - Output (Max): 27.6A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR3709ZTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCX51E6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 45V 1A PG-SOT89Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT89 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W |
auf Bestellung 54900 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4929CXVAM18NAHAMA1 | Infineon Technologies |
Description: IC SPEED SENSOR SSO-3Packaging: Cut Tape (CT) Features: Programmable, Temperature Compensated Package / Case: 3-SIP Module Output Type: Open Drain Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-52 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFZ46ZSTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 3616 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 242+ | 1.87 EUR |
| ISC110N12NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.99 EUR |
| DZ1100N22KHPSA2 |
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Hersteller: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 799.39 EUR |
| IRFB7440GPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 279+ | 1.63 EUR |
| AUIRFS4610 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| CY7C25632KV18-500BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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| S29AS016J70BHI043 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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| S29GL064S70BHI043 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S90FHI040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S29GL064S90BHI043 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL064S90BHI040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| IDD09SG60CXTMA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Description: DIODE SIL CARB 600V 9A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C13451G-100BZXE |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 15.61 EUR |
| CHL8325A-03CRT |
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Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
Produkt ist nicht verfügbar
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| FF225R12ME4PBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 158.96 EUR |
| S29GL512T10TFI013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T10TFI013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.68 EUR |
| 10+ | 13.62 EUR |
| 25+ | 13.2 EUR |
| 50+ | 12.89 EUR |
| 100+ | 12.57 EUR |
| 250+ | 12.19 EUR |
| EVALFFXMR20KM1HDRTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR FF3MR20KM1H
Packaging: Box
Function: MOSFET
Type: Power Management
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Description: EVAL BOARD FOR FF3MR20KM1H
Packaging: Box
Function: MOSFET
Type: Power Management
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF4MR12W2M1HB11BPSA1 |
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Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF75R12W1T7EB11BPSA1 |
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Hersteller: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 62.11 EUR |
| 24+ | 42.49 EUR |
| CY15V108QN-20LPXI |
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Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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| CY15V108QI-20LPXC |
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Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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| ESD8V0L1B-02LRH E6433 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
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| IMBG120R116M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
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| IMBG120R116M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.95 EUR |
| 10+ | 7.36 EUR |
| 100+ | 5.33 EUR |
| IPB80N06S2L09ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IM240M6Z1BALMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
Produkt ist nicht verfügbar
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| IR2011PBF | ![]() |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.68 EUR |
| 10+ | 4.29 EUR |
| 50+ | 3.73 EUR |
| 100+ | 3.56 EUR |
| 250+ | 3.37 EUR |
| 500+ | 3.26 EUR |
| CY8C4247LTQ-M475 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.61 EUR |
| 10+ | 7.42 EUR |
| 25+ | 6.87 EUR |
| 80+ | 6.4 EUR |
| CY8C4247BZI-L479 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.33 EUR |
| 10+ | 12.02 EUR |
| 25+ | 11.2 EUR |
| 80+ | 10.72 EUR |
| CY8C4247FNI-BL493T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 7.93 EUR |
| CY8C4247FNI-BL493T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.57 EUR |
| 10+ | 10.53 EUR |
| 25+ | 9.77 EUR |
| 100+ | 8.93 EUR |
| 250+ | 8.53 EUR |
| 500+ | 8.29 EUR |
| 1000+ | 8.09 EUR |
| CY8C4247AZA-M475T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4247AZA-M475 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| CY8C4247LWA-M484T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
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| CY8C4247LWA-M484 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
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| CY8C4247AZA-M483 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
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| CY8C4247AZS-M475T |
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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| CY8C4247AZS-M475 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.76 EUR |
| 10+ | 13.07 EUR |
| 25+ | 12.15 EUR |
| 160+ | 10.88 EUR |
| 320+ | 10.55 EUR |
| 480+ | 10.38 EUR |
| 960+ | 10.14 EUR |
| CY8C4247LWS-M484T |
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| CY8C4247AZS-M483 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 17.67 EUR |
| 10+ | 13.81 EUR |
| 25+ | 12.84 EUR |
| 80+ | 11.93 EUR |
| 250+ | 11.28 EUR |
| 500+ | 10.97 EUR |
| 1000+ | 10.72 EUR |
| TT250N16KOFHPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 295.59 EUR |
| 12+ | 270.78 EUR |
| IKD06N60RAATMA2 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CY22050KFI |
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Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.8 EUR |
| 10+ | 19.12 EUR |
| 25+ | 18.33 EUR |
| 100+ | 16.15 EUR |
| 250+ | 15.36 EUR |
| 960+ | 13.18 EUR |
| CY22050KZXC-149 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| CY22050KZXC-135 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| CY22050FC |
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Hersteller: Infineon Technologies
Description: CLOCK SYNTH FLASH 1-PLL 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency - Max: 200MHz
Type: Clock Generator
Input: Crystal or Other
Voltage - Supply: 3.3V
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Verified
Description: CLOCK SYNTH FLASH 1-PLL 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency - Max: 200MHz
Type: Clock Generator
Input: Crystal or Other
Voltage - Supply: 3.3V
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Verified
auf Bestellung 4644 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 3.02 EUR |
| CY22050KZXI-133 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
auf Bestellung 7203 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 3.46 EUR |
| CY22050ZXC-126 |
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Type: Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Type: Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
auf Bestellung 502 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 325+ | 1.51 EUR |
| BCR 192 B6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BCR 191T E6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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| BCR 199T E6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
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| BCR 199L3 E6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
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| BCR 191F E6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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| CY8C6148BZI-S2F44T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| BTS700151ESPXUMA2 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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| IRFR3709ZTRRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 422+ | 1.07 EUR |
| BCX51E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 54900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2968+ | 0.17 EUR |
| TLE4929CXVAM18NAHAMA1 |
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Hersteller: Infineon Technologies
Description: IC SPEED SENSOR SSO-3
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
Description: IC SPEED SENSOR SSO-3
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
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