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CY8C4146AZQ-S423 CY8C4146AZQ-S423 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69 Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 2500 Stücke:
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4+6.12 EUR
10+4.63 EUR
25+4.25 EUR
100+3.84 EUR
250+3.64 EUR
500+3.59 EUR
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CY8C21323-24LQXIT CY8C21323-24LQXIT Infineon Technologies Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 4KB FLASH 24QFN
DigiKey Programmable: Not Verified
Number of I/O: 16
Supplier Device Package: 24-QFN (4x4)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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CY8C21323-24LQXIT CY8C21323-24LQXIT Infineon Technologies Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 4KB FLASH 24QFN
DigiKey Programmable: Not Verified
Number of I/O: 16
Supplier Device Package: 24-QFN (4x4)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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10+6.5 EUR
25+5.97 EUR
100+5.4 EUR
250+5.13 EUR
500+4.97 EUR
1000+4.83 EUR
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TLV4906KFTSA1 TLV4906KFTSA1 Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: MAGNETIC SWITCH UNIPOLAR SC59
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SC59-3
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 4.7mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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6000+0.54 EUR
9000+0.52 EUR
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TLV4906KFTSA1 TLV4906KFTSA1 Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: MAGNETIC SWITCH UNIPOLAR SC59
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SC59-3
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 4.7mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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25+0.86 EUR
26+0.81 EUR
28+0.75 EUR
50+0.71 EUR
100+0.68 EUR
500+0.62 EUR
1000+0.58 EUR
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S25FS256SDSBHB200 S25FS256SDSBHB200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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CY8C4125AZS-M443T CY8C4125AZS-M443T Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 48LQFP
Number of I/O: 38
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
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CY8C4125AZS-M445 CY8C4125AZS-M445 Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 64LQFP
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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CY8C4125AZS-M445T CY8C4125AZS-M445T Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 64LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
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CY8C4126AZS-M443T CY8C4126AZS-M443T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 38
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
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CY8C4126AZS-M445 CY8C4126AZS-M445 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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CY8C4126AZS-M445T CY8C4126AZS-M445T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4246AZS-M443 CY8C4246AZS-M443 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 48LQFP
Qualification: AEC-Q100
Number of I/O: 38
Grade: Automotive
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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CY8C4246AZS-M445 CY8C4246AZS-M445 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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CY8C4246AZS-M445T CY8C4246AZS-M445T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 Infineon Technologies Infineon-FB30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043163797a60116387fb7fa011e Description: IGBT MODULE 600V 39A 115W MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 115 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 39 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP30R06KE3BOSA1 FP30R06KE3BOSA1 Infineon Technologies Infineon-FP30R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43328f05a7f Description: IGBT MODULE 600V 37A 125W MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 37 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP30R06W1E3B11BOMA1 Infineon Technologies Infineon-FP30R06W1E3_B11-DS-v02_00-EN.pdf?fileId=db3a30432ad629a6012af0c5c0515dc5 Description: FP30R06 - IGBT MODULE
Packaging: Bulk
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IJW120R070T1FKSA1 IJW120R070T1FKSA1 Infineon Technologies INFNS28721-1.pdf?t.download=true&u=5oefqw Description: JFET PWR FIELD EFFECT
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
Resistance - RDS(On): 70 mOhms
Power - Max: 238 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: PG-TO247-3
Current Drain (Id) - Max: 35 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IRG7PH35UD1MPBF IRG7PH35UD1MPBF Infineon Technologies IRG7PH35UD1MPbF.pdf Description: IGBT TRENCH 1200V 50A TO-247AD
Power - Max: 179 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 130 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 620µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRG7PH35UD1-EP IRG7PH35UD1-EP Infineon Technologies IRG7PH35UD1PBF%28-EP%29.pdf Description: IGBT TRENCH 1200V 50A TO-247AD
Power - Max: 179 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 130 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 620µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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D1800N48TVFXPSA1 D1800N48TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE STANDARD 4800V 1800A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Voltage - DC Reverse (Vr) (Max): 4800 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 1800A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Packaging: Tray
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CY8C4024LQS-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
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CY8C4024LQS-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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CY8C4025LQSS413XQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
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CY8C4025LQSS413TXUMA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
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FD1200R12IE4B1S1BDMA1 Infineon Technologies Infineonc09618.pdf Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
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F3L6MR20W2M1HB70BPSA1 F3L6MR20W2M1HB70BPSA1 Infineon Technologies Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1200V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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FF6MR20W2M1HB70BPSA1 FF6MR20W2M1HB70BPSA1 Infineon Technologies infineon-ff6mr20w2m1h-b70-datasheet-en.pdf Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1200V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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IM06B20AC1XKMA1 Infineon Technologies Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
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IM06B30AC1XKMA1 Infineon Technologies Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
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SPOC2DBBTS710404ESATOBO1 SPOC2DBBTS710404ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71040-4ESA
Utilized IC / Part: BTS71040-4ESA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
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SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1 Infineon Technologies SPOC2DBBTS710404ESPTOBO1.pdf Description: SPOC-2 DB BTS71040-4ESP
Utilized IC / Part: BTS71040-4ESP
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
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IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies infineon-iglt65r035d2-datasheet-en.pdf Description: GANFET N-CH 650V 47A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies infineon-iglt65r035d2-datasheet-en.pdf Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies infineon-igot65r035d2-datasheet-en.pdf Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies infineon-igot65r035d2-datasheet-en.pdf Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
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IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies infineon-imbg120r040m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies infineon-imbg120r040m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies infineon-imlt65r015m2h-datasheet-en.pdf Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies infineon-imlt65r015m2h-datasheet-en.pdf Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Tape & Reel (TR)
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AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Cut Tape (CT)
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KITA2GTC3975VTRBTOBO1 KITA2GTC3975VTRBTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB FIXED BRD
Platform: AURIX TC397 5V TRB Fixed
Utilized IC / Part: TC397
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
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KITA2GTC3645VTRBSTOBO1 KITA2GTC3645VTRBSTOBO1 Infineon Technologies Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba Description: AURIX TC364 5V TRB SOCKET BRD
Platform: AURIX TC364 5V TRB Socket
Utilized IC / Part: TC364
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
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KITA2GTC3775VTRBSTOBO1 KITA2GTC3775VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC377 5V TRB SOCKET BRD
Platform: AURIX TC377 5V TRB Socket
Utilized IC / Part: TC377
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
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APPKITA2GSAFETYTOBO1 APPKITA2GSAFETYTOBO1 Infineon Technologies Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130 Description: APPKITA2GSAFETYTOBO1
Platform: AURIX
Utilized IC / Part: TC397
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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KITA2GTC3895VTRBTOBO1 KITA2GTC3895VTRBTOBO1 Infineon Technologies Description: KIT_A2G_TC389_5V_TRB
Platform: AURIX
Utilized IC / Part: TC389
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
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IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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IPI70N04S406AKSA1 IPI70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 26µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
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TLT9252VLCXUMA1 TLT9252VLCXUMA1 Infineon Technologies Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb Description: IC TRANSCEIVER HALF 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Duplex: Half
Receiver Hysteresis: 30 mV
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Cut Tape (CT)
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10+2.78 EUR
25+2.53 EUR
100+2.26 EUR
250+2.14 EUR
500+2.06 EUR
1000+2 EUR
2500+1.93 EUR
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CY8C20246A-24LKXIT CY8C20246A-24LKXIT Infineon Technologies infineon-ts2000-001-64564-software-module-datasheets-en.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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T1190N16TOFVTXPSA1 T1190N16TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
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T1500N16TOFVTXPSA1 T1500N16TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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T1500N18TOFVTXPSA1 T1500N18TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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T2600N16TOFVTXPSA1 T2600N16TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
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T2600N18TOFVTXPSA1 T2600N18TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Produkt ist nicht verfügbar
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T3800N18TOFVTXPSA1 T3800N18TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
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5+4.57 EUR
10+2.93 EUR
100+2 EUR
500+1.59 EUR
1000+1.48 EUR
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CY8C4146AZQ-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69
CY8C4146AZQ-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
4+6.12 EUR
10+4.63 EUR
25+4.25 EUR
100+3.84 EUR
250+3.64 EUR
500+3.59 EUR
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CY8C21323-24LQXIT Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C21323-24LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 24QFN
DigiKey Programmable: Not Verified
Number of I/O: 16
Supplier Device Package: 24-QFN (4x4)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C21323-24LQXIT Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C21323-24LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 24QFN
DigiKey Programmable: Not Verified
Number of I/O: 16
Supplier Device Package: 24-QFN (4x4)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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AnzahlPrivatkunde
3+8.57 EUR
10+6.5 EUR
25+5.97 EUR
100+5.4 EUR
250+5.13 EUR
500+4.97 EUR
1000+4.83 EUR
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SC59-3
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 4.7mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
3000+0.55 EUR
6000+0.54 EUR
9000+0.52 EUR
Mindestbestellmenge: 3000 Stücke
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SC59-3
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 4.7mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 14348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
25+0.86 EUR
26+0.81 EUR
28+0.75 EUR
50+0.71 EUR
100+0.68 EUR
500+0.62 EUR
1000+0.58 EUR
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S25FS256SDSBHB200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SDSBHB200
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4125AZS-M443T
CY8C4125AZS-M443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Number of I/O: 38
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4125AZS-M445
CY8C4125AZS-M445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4125AZS-M445T
CY8C4125AZS-M445T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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CY8C4126AZS-M443T
CY8C4126AZS-M443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 38
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4126AZS-M445
CY8C4126AZS-M445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4126AZS-M445T
CY8C4126AZS-M445T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4246AZS-M443
CY8C4246AZS-M443
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Qualification: AEC-Q100
Number of I/O: 38
Grade: Automotive
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4246AZS-M445
CY8C4246AZS-M445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4246AZS-M445T
CY8C4246AZS-M445T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 51
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 Infineon-FB30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043163797a60116387fb7fa011e
FB30R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 39A 115W MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 115 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 39 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP30R06KE3BOSA1 Infineon-FP30R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43328f05a7f
FP30R06KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 37A 125W MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 37 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP30R06W1E3B11BOMA1 Infineon-FP30R06W1E3_B11-DS-v02_00-EN.pdf?fileId=db3a30432ad629a6012af0c5c0515dc5
Hersteller: Infineon Technologies
Description: FP30R06 - IGBT MODULE
Packaging: Bulk
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IJW120R070T1FKSA1 INFNS28721-1.pdf?t.download=true&u=5oefqw
IJW120R070T1FKSA1
Hersteller: Infineon Technologies
Description: JFET PWR FIELD EFFECT
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
Resistance - RDS(On): 70 mOhms
Power - Max: 238 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: PG-TO247-3
Current Drain (Id) - Max: 35 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IRG7PH35UD1MPBF IRG7PH35UD1MPbF.pdf
IRG7PH35UD1MPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Power - Max: 179 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 130 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 620µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRG7PH35UD1-EP IRG7PH35UD1PBF%28-EP%29.pdf
IRG7PH35UD1-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Power - Max: 179 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 130 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 620µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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D1800N48TVFXPSA1 D1800N.pdf
D1800N48TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 4800V 1800A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Voltage - DC Reverse (Vr) (Max): 4800 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 1800A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Packaging: Tray
auf Bestellung 8 Stücke:
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1+877.16 EUR
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CY8C4024LQS-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4024LQS-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4025LQSS413XQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4025LQSS413TXUMA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FD1200R12IE4B1S1BDMA1 Infineonc09618.pdf
Hersteller: Infineon Technologies
Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
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F3L6MR20W2M1HB70BPSA1 Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a
F3L6MR20W2M1HB70BPSA1
Hersteller: Infineon Technologies
Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1200V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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FF6MR20W2M1HB70BPSA1 infineon-ff6mr20w2m1h-b70-datasheet-en.pdf
FF6MR20W2M1HB70BPSA1
Hersteller: Infineon Technologies
Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1200V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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IM06B20AC1XKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
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IM06B30AC1XKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
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SPOC2DBBTS710404ESATOBO1
SPOC2DBBTS710404ESATOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESA
Utilized IC / Part: BTS71040-4ESA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
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SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1.pdf
SPOC2DBBTS710404ESPTOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESP
Utilized IC / Part: BTS71040-4ESP
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
Produkt ist nicht verfügbar
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IGLT65R035D2ATMA1 infineon-iglt65r035d2-datasheet-en.pdf
IGLT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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IGLT65R035D2ATMA1 infineon-iglt65r035d2-datasheet-en.pdf
IGLT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
auf Bestellung 3577 Stücke:
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IGOT65R035D2AUMA1 infineon-igot65r035d2-datasheet-en.pdf
IGOT65R035D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Produkt ist nicht verfügbar
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IGOT65R035D2AUMA1 infineon-igot65r035d2-datasheet-en.pdf
IGOT65R035D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
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IMBG120R040M2HXTMA1 infineon-imbg120r040m2h-datasheet-en.pdf
IMBG120R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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IMBG120R040M2HXTMA1 infineon-imbg120r040m2h-datasheet-en.pdf
IMBG120R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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1+21.22 EUR
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IMLT65R015M2HXTMA1 infineon-imlt65r015m2h-datasheet-en.pdf
IMLT65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R015M2HXTMA1 infineon-imlt65r015m2h-datasheet-en.pdf
IMLT65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 291 Stücke:
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10+20.58 EUR
100+17.48 EUR
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AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 725 Stücke:
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AnzahlPrivatkunde
1+45.3 EUR
10+32.69 EUR
100+26.51 EUR
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KITA2GTC3975VTRBTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC397 5V TRB FIXED BRD
Platform: AURIX TC397 5V TRB Fixed
Utilized IC / Part: TC397
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
auf Bestellung 4 Stücke:
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1+1707.76 EUR
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KITA2GTC3645VTRBSTOBO1 Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba
KITA2GTC3645VTRBSTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC364 5V TRB SOCKET BRD
Platform: AURIX TC364 5V TRB Socket
Utilized IC / Part: TC364
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
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1+2499.8 EUR
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KITA2GTC3775VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3775VTRBSTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC377 5V TRB SOCKET BRD
Platform: AURIX TC377 5V TRB Socket
Utilized IC / Part: TC377
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
auf Bestellung 2 Stücke:
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1+3289.2 EUR
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APPKITA2GSAFETYTOBO1 Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130
APPKITA2GSAFETYTOBO1
Hersteller: Infineon Technologies
Description: APPKITA2GSAFETYTOBO1
Platform: AURIX
Utilized IC / Part: TC397
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 5 Stücke:
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1+1141.28 EUR
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KITA2GTC3895VTRBTOBO1
KITA2GTC3895VTRBTOBO1
Hersteller: Infineon Technologies
Description: KIT_A2G_TC389_5V_TRB
Platform: AURIX
Utilized IC / Part: TC389
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
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1+1778.92 EUR
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IPD50N03S207ATMA1 fundamentals-of-power-semiconductors
IPD50N03S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 19407 Stücke:
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AnzahlPrivatkunde
260+2.11 EUR
Mindestbestellmenge: 260 Stücke
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IPI70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPI70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 26µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
414+1.44 EUR
Mindestbestellmenge: 414 Stücke
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TLT9252VLCXUMA1 Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb
TLT9252VLCXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Qualification: AEC-Q100
Grade: Automotive
Duplex: Half
Receiver Hysteresis: 30 mV
Supplier Device Package: PG-TSON-14-3
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 14-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.77 EUR
10+2.78 EUR
25+2.53 EUR
100+2.26 EUR
250+2.14 EUR
500+2.06 EUR
1000+2 EUR
2500+1.93 EUR
Mindestbestellmenge: 6 Stücke
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CY8C20246A-24LKXIT infineon-ts2000-001-64564-software-module-datasheets-en.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY8C20246A-24LKXIT
Hersteller: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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T1190N16TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+581.11 EUR
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T1500N16TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
auf Bestellung 8 Stücke:
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T1500N18TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+608.32 EUR
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T2600N16TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Produkt ist nicht verfügbar
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T2600N18TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Produkt ist nicht verfügbar
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T3800N18TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
auf Bestellung 2437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.57 EUR
10+2.93 EUR
100+2 EUR
500+1.59 EUR
1000+1.48 EUR
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