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FP10R12W1T4PBPSA1 FP10R12W1T4PBPSA1 Infineon Technologies Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207 Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 415 Stücke:
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8+66.86 EUR
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FP10R12W1T4BOMA1 FP10R12W1T4BOMA1 Infineon Technologies Infineon-FP10R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043163797a6011638990fd0016c Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 33 Stücke:
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10+55.06 EUR
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IRF200B211XKMA1 Infineon Technologies Infineon-IRF200B211-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355db4d5418d4 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Produkt ist nicht verfügbar
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IRF200S234 IRF200S234 Infineon Technologies Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339 Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
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IRF200S234 IRF200S234 Infineon Technologies Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339 Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
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TLE7273G V50 TLE7273G V50 Infineon Technologies TLE7273.pdf Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FF300R17ME4PB11BPSA1 FF300R17ME4PB11BPSA1 Infineon Technologies Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27 Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
auf Bestellung 381 Stücke:
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FF450R12ME4EB11BPSA1 FF450R12ME4EB11BPSA1 Infineon Technologies Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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2+291.90 EUR
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IMW65R050M2HXKSA1 IMW65R050M2HXKSA1 Infineon Technologies Infineon-IMW65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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2+14.17 EUR
30+8.28 EUR
120+7.39 EUR
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IMZA65R050M2HXKSA1 IMZA65R050M2HXKSA1 Infineon Technologies Infineon-IMZA65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b51c352d9 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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2+14.78 EUR
30+8.68 EUR
120+7.79 EUR
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CYBLE-224110-PROG Infineon Technologies Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
Produkt ist nicht verfügbar
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CYBLE-224110-00 CYBLE-224110-00 Infineon Technologies download Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ0901NLSATMA1 ISZ0901NLSATMA1 Infineon Technologies Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162 Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
auf Bestellung 3565 Stücke:
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1113+0.44 EUR
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S79FL512SDSMFVG01 S79FL512SDSMFVG01 Infineon Technologies download Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP1405 AUIRFP1405 Infineon Technologies IRSDS11927-1.pdf?t.download=true&u=5oefqw Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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124+3.94 EUR
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AUIRFZ34N AUIRFZ34N Infineon Technologies IRSDS11400-1.pdf?t.download=true&u=5oefqw Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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330+1.48 EUR
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S99-50567 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1370KVE33-167AXM CY7C1370KVE33-167AXM Infineon Technologies Infineon-CY7C1370KVE33_Military_Temperature_18-Mbit_(512K_X_36)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)_Datasheet-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2553f68cb&utm_source=cypres Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1460KVE33-167BZC CY7C1460KVE33-167BZC Infineon Technologies Infineon-CY7C1460KV33_CY7C1460KVE33_CY7C1462KVE33_36-Mbit_(1M_36_2M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecedb6c4958&utm_source=cypress&utm_medium=referral&u Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1440KV33-167AXC CY7C1440KV33-167AXC Infineon Technologies Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IPP65R150CFDXKSA2 IPP65R150CFDXKSA2 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R150CFDXKSA1 IPP65R150CFDXKSA1 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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S99-50542 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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EVALTDA388121VOUTTOBO1 EVALTDA388121VOUTTOBO1 Infineon Technologies Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3881233VOUTTOBO1 EVALTDA3881233VOUTTOBO1 Infineon Technologies Description: EVAL BOARD FOR TDA38812
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388131VOUTTOBO1 EVALTDA388131VOUTTOBO1 Infineon Technologies Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA388255VOUTTOBO1 EVALTDA388255VOUTTOBO1 Infineon Technologies Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388251VOUTTOBO1 EVALTDA388251VOUTTOBO1 Infineon Technologies Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA3882533VOUTTOBO1 EVALTDA3882533VOUTTOBO1 Infineon Technologies Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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EVALTDA388261VOUTTOBO1 EVALTDA388261VOUTTOBO1 Infineon Technologies Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
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IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
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IRF9393TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF IRLML6302GTRPBF Infineon Technologies irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625 Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
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IRGP20B120UD-EP IRGP20B120UD-EP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 1200V 40A TO-247AD
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 850µJ (on), 425µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
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IPD30N06S2L23ATMA1 IPD30N06S2L23ATMA1 Infineon Technologies IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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S6J336CHTBSE2D000 S6J336CHTBSE2D000 Infineon Technologies Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2 Description: TRAVEO-40NM
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 94
Produkt ist nicht verfügbar
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IRF1404ZSPBF IRF1404ZSPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IPD50N06S4L08ATMA1 IPD50N06S4L08ATMA1 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
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IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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TLD1312ELXUMA1 TLD1312ELXUMA1 Infineon Technologies Infineon-TLD1312EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37adde3528 Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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TLD1311ELXUMA1 TLD1311ELXUMA1 Infineon Technologies Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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TLD1326ELXUMA1 TLD1326ELXUMA1 Infineon Technologies Infineon-TLD1326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e40d3613544 Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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TLD55412QVXUMA1 TLD55412QVXUMA1 Infineon Technologies Infineon-TLD5541-2QV-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d8422aa7a5437 Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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TLD55411QVXUMA1 TLD55411QVXUMA1 Infineon Technologies Infineon-TLD5541-1QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af2468f6032b Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
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TLD55411QVXUMA1 TLD55411QVXUMA1 Infineon Technologies Infineon-TLD5541-1QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af2468f6032b Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Produkt ist nicht verfügbar
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IPT60R016CM8XTMA1 IPT60R016CM8XTMA1 Infineon Technologies Description: IPT60R016CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
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IPT60R016CM8XTMA1 IPT60R016CM8XTMA1 Infineon Technologies Description: IPT60R016CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
Produkt ist nicht verfügbar
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CY7C1265XV18-600BZXC CY7C1265XV18-600BZXC Infineon Technologies Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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MB96F673ABPMC1-GS-120E2 MB96F673ABPMC1-GS-120E2 Infineon Technologies Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC1-GS-UJE1 CY96F673ABPMC1-GS-UJE1 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC1-GS-UJE2 CY96F673ABPMC1-GS-UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC-GS-UJE2 CY96F673ABPMC-GS-UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673RBPMC1-GS-UJE1 CY96F673RBPMC1-GS-UJE1 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673RBPMC-GS-UJE2 CY96F673RBPMC-GS-UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHI020 S26KS512SDPBHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 816 Stücke:
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27+19.41 EUR
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BTS3205NHUMA1 BTS3205NHUMA1 Infineon Technologies Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 10V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 520mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Short Circuit, UVLO
Produkt ist nicht verfügbar
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51-20632Z01-A Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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SLB9672VU20FW1523XTMA1 SLB9672VU20FW1523XTMA1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c7f2a768a017f89965f764432 Description: SECURITY CONTROLLER OPTIGA TPM S
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
RAM Size: 51K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: SLB 9672
Program Memory Type: NVSRAM
Applications: Embedded Security Trusted Computing
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
auf Bestellung 5000 Stücke:
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5000+3.09 EUR
Mindestbestellmenge: 5000
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FP10R12W1T4PBPSA1 Infineon-FP10R12W1T4P-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfbf693b47207
FP10R12W1T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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Anzahl Preis
8+66.86 EUR
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FP10R12W1T4BOMA1 Infineon-FP10R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043163797a6011638990fd0016c
FP10R12W1T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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Anzahl Preis
10+55.06 EUR
Mindestbestellmenge: 10
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IRF200B211XKMA1 Infineon-IRF200B211-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355db4d5418d4
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Produkt ist nicht verfügbar
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IRF200S234 Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339
IRF200S234
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
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IRF200S234 Infineon-IRF200S234-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d9f75844d4339
IRF200S234
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V
Produkt ist nicht verfügbar
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TLE7273G V50 TLE7273.pdf
TLE7273G V50
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 180MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FF300R17ME4PB11BPSA1 Infineon-FF300R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b195ecd4b4a27
FF300R17ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
auf Bestellung 381 Stücke:
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Anzahl Preis
2+321.23 EUR
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FF450R12ME4EB11BPSA1 Infineon-FF450R12ME4E_B11-DS-v03_00-EN.pdf?fileId=5546d4625f96303e015fa5e4483a397d
FF450R12ME4EB11BPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT MED PWR ECONOD-4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 650 Stücke:
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Anzahl Preis
2+291.90 EUR
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IMW65R050M2HXKSA1 Infineon-IMW65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4
IMW65R050M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 137 Stücke:
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Anzahl Preis
2+14.17 EUR
30+8.28 EUR
120+7.39 EUR
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IMZA65R050M2HXKSA1 Infineon-IMZA65R050M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b51c352d9
IMZA65R050M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 153W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 135 Stücke:
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Anzahl Preis
2+14.78 EUR
30+8.68 EUR
120+7.79 EUR
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CYBLE-224110-PROG
Hersteller: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00, CYBLE-224116-01
Type: Programmer
Contents: Board(s)
Produkt ist nicht verfügbar
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CYBLE-224110-00 download
CYBLE-224110-00
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 9.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 21.5mA
Current - Transmitting: 20mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ0901NLSATMA1 Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162
ISZ0901NLSATMA1
Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
auf Bestellung 3565 Stücke:
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Anzahl Preis
1113+0.44 EUR
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S79FL512SDSMFVG01 download
S79FL512SDSMFVG01
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP1405 IRSDS11927-1.pdf?t.download=true&u=5oefqw
AUIRFP1405
Hersteller: Infineon Technologies
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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124+3.94 EUR
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AUIRFZ34N IRSDS11400-1.pdf?t.download=true&u=5oefqw
AUIRFZ34N
Hersteller: Infineon Technologies
Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
330+1.48 EUR
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S99-50567
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1370KVE33-167AXM Infineon-CY7C1370KVE33_Military_Temperature_18-Mbit_(512K_X_36)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)_Datasheet-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2553f68cb&utm_source=cypres
CY7C1370KVE33-167AXM
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1460KVE33-167BZC Infineon-CY7C1460KV33_CY7C1460KVE33_CY7C1462KVE33_36-Mbit_(1M_36_2M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecedb6c4958&utm_source=cypress&utm_medium=referral&u
CY7C1460KVE33-167BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1440KV33-167AXC Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
CY7C1440KV33-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP65R150CFDXKSA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPP65R150CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPP65R310CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPP65R150CFDXKSA1 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPP65R150CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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S99-50542
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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EVALTDA388121VOUTTOBO1
EVALTDA388121VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA388121VOUTTO
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA3881233VOUTTOBO1
EVALTDA3881233VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38812
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38812
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.64 EUR
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EVALTDA388131VOUTTOBO1
EVALTDA388131VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA388131VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 12A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38813
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA388255VOUTTOBO1
EVALTDA388255VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA388255VOUTTOBO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA388251VOUTTOBO1
EVALTDA388251VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA388251VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA3882533VOUTTOBO1
EVALTDA3882533VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA3882533VOUTTOB
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38825
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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EVALTDA388261VOUTTOBO1
EVALTDA388261VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVALTDA388261VOUTTOB
Packaging: Box
Voltage - Output: 1V
Voltage - Input: 4V ~ 16V
Current - Output: 20A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TDA38826
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
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IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
Mindestbestellmenge: 6
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IRF9393TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
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IRLML6302GTRPBF irlml6302gpbf.pdf?fileId=5546d462533600a40153566883212625
IRLML6302GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
auf Bestellung 6817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2427+0.19 EUR
Mindestbestellmenge: 2427
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IRGP20B120UD-EP fundamentals-of-power-semiconductors
IRGP20B120UD-EP
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 40A TO-247AD
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 850µJ (on), 425µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IPD30N06S2L23ATMA1 IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
533+0.91 EUR
Mindestbestellmenge: 533
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S6J336CHTBSE2D000 Infineon-S6J3360_Series_S6J3370_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4479d6ae2
S6J336CHTBSE2D000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 94
Produkt ist nicht verfügbar
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IRF1404ZSPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
336+1.44 EUR
Mindestbestellmenge: 336
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IPD50N06S4L08ATMA1 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
682+0.71 EUR
Mindestbestellmenge: 682
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IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+6.79 EUR
Mindestbestellmenge: 72
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TLD1312ELXUMA1 Infineon-TLD1312EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37adde3528
TLD1312ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
489+1.03 EUR
Mindestbestellmenge: 489
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TLD1311ELXUMA1 Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506
TLD1311ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 156074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
442+1.15 EUR
Mindestbestellmenge: 442
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TLD1326ELXUMA1 Infineon-TLD1326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e40d3613544
TLD1326ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 4321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.30 EUR
Mindestbestellmenge: 392
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TLD55412QVXUMA1 Infineon-TLD5541-2QV-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015d8422aa7a5437
TLD55412QVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Produkt ist nicht verfügbar
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TLD55411QVXUMA1 Infineon-TLD5541-1QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af2468f6032b
TLD55411QVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Produkt ist nicht verfügbar
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TLD55411QVXUMA1 Infineon-TLD5541-1QV-DS-v01_10-EN.pdf?fileId=5546d462625a528f0162af2468f6032b
TLD55411QVXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Produkt ist nicht verfügbar
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IPT60R016CM8XTMA1
IPT60R016CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R016CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R016CM8XTMA1
IPT60R016CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R016CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
Produkt ist nicht verfügbar
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CY7C1265XV18-600BZXC Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772
CY7C1265XV18-600BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+171.32 EUR
Mindestbestellmenge: 3
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MB96F673ABPMC1-GS-120E2
MB96F673ABPMC1-GS-120E2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC1-GS-UJE1 download
CY96F673ABPMC1-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC1-GS-UJE2 download
CY96F673ABPMC1-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673ABPMC-GS-UJE2 download
CY96F673ABPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673RBPMC1-GS-UJE1 download
CY96F673RBPMC1-GS-UJE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F673RBPMC-GS-UJE2 download
CY96F673RBPMC-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDPBHI020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+19.41 EUR
Mindestbestellmenge: 27
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BTS3205NHUMA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
BTS3205NHUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 10V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 520mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Short Circuit, UVLO
Produkt ist nicht verfügbar
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51-20632Z01-A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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SLB9672VU20FW1523XTMA1 Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c7f2a768a017f89965f764432
SLB9672VU20FW1523XTMA1
Hersteller: Infineon Technologies
Description: SECURITY CONTROLLER OPTIGA TPM S
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
RAM Size: 51K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: SLB 9672
Program Memory Type: NVSRAM
Applications: Embedded Security Trusted Computing
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+3.09 EUR
Mindestbestellmenge: 5000
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