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IKCM10L60HAXKMA1 IKCM10L60HAXKMA1 Infineon Technologies IKCM10L60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 538 Stücke:
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49+10.40 EUR
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KP253HPXTMA2 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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FD250R65KE3KNOSA1 FD250R65KE3KNOSA1 Infineon Technologies Infineon-FD250R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a3043382e8373013895afab4b16b1 Description: IGBT MOD 6500V 250A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
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FZ500R65KE3NOSA1 FZ500R65KE3NOSA1 Infineon Technologies Infineon-FZ500R65KE3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea1a9f4a5639 Description: IGBT MODULE 6500V 500A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 2000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
Produkt ist nicht verfügbar
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S29GL512S11DHB020 S29GL512S11DHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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2+17.14 EUR
10+15.92 EUR
25+15.42 EUR
40+15.17 EUR
80+14.80 EUR
260+14.70 EUR
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S26HL01GTFPBHB020 S26HL01GTFPBHB020 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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25+39.83 EUR
40+38.57 EUR
80+33.96 EUR
260+33.04 EUR
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S27KL0641DABHB023 S27KL0641DABHB023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064S70TFI070 S29GL064S70TFI070 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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116+5.25 EUR
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FF900R12IP4B60BOSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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FF900R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6714MTRPBF IRF6714MTRPBF Infineon Technologies irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80 Description: MOSFET N-CH 25V 29A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 29A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 13 V
Produkt ist nicht verfügbar
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S25FL512SAGBHEC13 S25FL512SAGBHEC13 Infineon Technologies Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HL01GTFABHB033 S25HL01GTFABHB033 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP80N04S4L04AKSA1 IPP80N04S4L04AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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IPB45N04S4L08ATMA1 IPB45N04S4L08ATMA1 Infineon Technologies IPx45N04S4L-08.pdf Description: MOSFET N-CH 40V 45A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 45A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 17µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Produkt ist nicht verfügbar
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IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC0303LSATMA1 BSC0303LSATMA1 Infineon Technologies Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
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5+3.80 EUR
10+2.46 EUR
100+1.68 EUR
500+1.35 EUR
1000+1.24 EUR
2000+1.15 EUR
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IRS2332SPBF IRS2332SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IPF031N13NM6ATMA1 IPF031N13NM6ATMA1 Infineon Technologies IPF031N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPF031N13NM6ATMA1 IPF031N13NM6ATMA1 Infineon Technologies IPF031N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
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CY62167DV30LL-70BVI CY62167DV30LL-70BVI Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CYW55570MIUBGT Infineon Technologies Description: WI-FI AND WI-FI+BT COMBO
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW55572MIUBGT Infineon Technologies Description: RF TXRX MOD BLUETOOTH WIFISMD
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Operating Temperature: -40°C ~ 85°C
Power - Output: 20dBm
Data Rate: 1.2Gbps
Protocol: 802.11ax, Bluetooth v5.3
Antenna Type: Antenna Not Included
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, SDIO, UART
Produkt ist nicht verfügbar
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TLS835B2ELVXUMA1 TLS835B2ELVXUMA1 Infineon Technologies Infineon-TLS835B2EL%20V-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629a9d32134b14 Description: IC REG LIN POS PROG 350MA SSOP14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Max): 6V
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.50V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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2500+1.12 EUR
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TLS835B2ELVXUMA1 TLS835B2ELVXUMA1 Infineon Technologies Infineon-TLS835B2EL%20V-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629a9d32134b14 Description: IC REG LIN POS PROG 350MA SSOP14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Max): 6V
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.50V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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25+2.08 EUR
100+1.77 EUR
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CY8C4128AZI-S443 CY8C4128AZI-S443 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109 Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4147AXI-S443 CY8C4147AXI-S443 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY8C4146AZI-S443T CY8C4146AZI-S443T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee556d86cff Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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BTS700201ESPXUMA2 BTS700201ESPXUMA2 Infineon Technologies Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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PROF2BTS70041EPRDBTOBO1 PROF2BTS70041EPRDBTOBO1 Infineon Technologies Description: Smart High-Side Power Switch
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPR
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FF150R12KE3B8BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
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CY7C64215-56LFXC CY7C64215-56LFXC Infineon Technologies CY7C64215.pdf Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
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FZ3600R17HE4HOSA2 FZ3600R17HE4HOSA2 Infineon Technologies Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
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FZ3600R17HE4PHPSA1 FZ3600R17HE4PHPSA1 Infineon Technologies Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
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IPS65R1K0CEAKMA1 IPS65R1K0CEAKMA1 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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CY8C20536A-24PVXI CY8C20536A-24PVXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY95F633KNPMC-G-UNCGE2 CY95F633KNPMC-G-UNCGE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY95F634HNPMC-G-UNE2 CY95F634HNPMC-G-UNE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY9BF406RAPMC-G-UNE1 CY9BF406RAPMC-G-UNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9AF116MAPMC-GNCGE2 Infineon Technologies Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295 Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CYT3DLABHBQ1AESGS CYT3DLABHBQ1AESGS Infineon Technologies Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-QFP
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TQFP
Number of I/O: 108
DigiKey Programmable: Not Verified
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KIT1EDBAUXGANTOBO1 KIT1EDBAUXGANTOBO1 Infineon Technologies Description: EVAL BOARD FOR 1EDB8275F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
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IMW65R015M2HXKSA1 IMW65R015M2HXKSA1 Infineon Technologies Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMW65R007M2HXKSA1 IMW65R007M2HXKSA1 Infineon Technologies IMW65R007M2H.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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IRGSL4B60KD1PBF IRGSL4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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S25FL128SAGNFV011 S25FL128SAGNFV011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BAR 67-02V E6327 BAR 67-02V E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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CY8CKIT-062S2-AI CY8CKIT-062S2-AI Infineon Technologies Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372 Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 15 Stücke:
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1+59.96 EUR
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FS1150R08A8P3LMCHPSA1 FS1150R08A8P3LMCHPSA1 Infineon Technologies Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098 Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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FS1150R08A8P3LBCHPSA1 FS1150R08A8P3LBCHPSA1 Infineon Technologies Infineon-FS1150R08A8P3LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f157c21bb0095 Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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KP467XTMA1 KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP467XTMA1 KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
auf Bestellung 1356 Stücke:
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5+4.73 EUR
10+4.52 EUR
25+4.27 EUR
50+4.10 EUR
100+3.94 EUR
500+3.62 EUR
1000+3.50 EUR
Mindestbestellmenge: 4
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AIMZH120R020M1TXKSA1 AIMZH120R020M1TXKSA1 Infineon Technologies Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 149 Stücke:
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1+40.13 EUR
30+25.69 EUR
120+24.01 EUR
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CY7C1041CV33-10BAJXE CY7C1041CV33-10BAJXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041BN-20ZSXA CY7C1041BN-20ZSXA Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
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CY7C1041CV33-15VC CY7C1041CV33-15VC Infineon Technologies CY7C1041CV33%20RevH.pdf Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3261-RGB Infineon Technologies Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
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IKCM10L60HAXKMA1 IKCM10L60HA.pdf
IKCM10L60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 538 Stücke:
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Anzahl Preis
49+10.40 EUR
Mindestbestellmenge: 49
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KP253HPXTMA2 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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FD250R65KE3KNOSA1 Infineon-FD250R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a3043382e8373013895afab4b16b1
FD250R65KE3KNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 250A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
auf Bestellung 9 Stücke:
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Anzahl Preis
1+3038.85 EUR
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FZ500R65KE3NOSA1 Infineon-FZ500R65KE3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea1a9f4a5639
FZ500R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 6500V 500A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 2000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
Produkt ist nicht verfügbar
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S29GL512S11DHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11DHB020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.14 EUR
10+15.92 EUR
25+15.42 EUR
40+15.17 EUR
80+14.80 EUR
260+14.70 EUR
Mindestbestellmenge: 2
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S26HL01GTFPBHB020 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL01GTFPBHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.89 EUR
10+41.27 EUR
25+39.83 EUR
40+38.57 EUR
80+33.96 EUR
260+33.04 EUR
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S27KL0641DABHB023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHB023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064S70TFI070 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S70TFI070
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
auf Bestellung 116 Stücke:
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Anzahl Preis
116+5.25 EUR
Mindestbestellmenge: 116
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FF900R12IP4B60BOSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Produkt ist nicht verfügbar
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FF900R12IP4PB60BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6714MTRPBF irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80
IRF6714MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 29A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 13 V
Produkt ist nicht verfügbar
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S25FL512SAGBHEC13 Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f
S25FL512SAGBHEC13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HL01GTFABHB033 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL01GTFABHB033
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP80N04S4L04AKSA1 Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t
IPP80N04S4L04AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
268+1.82 EUR
Mindestbestellmenge: 268
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IPB45N04S4L08ATMA1 IPx45N04S4L-08.pdf
IPB45N04S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 45A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 45A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 17µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Produkt ist nicht verfügbar
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IAUC45N04S6L063HATMA1 Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5
IAUC45N04S6L063HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC45N04S6L063HATMA1 Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5
IAUC45N04S6L063HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC0303LSATMA1 Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25
BSC0303LSATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
auf Bestellung 4908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.80 EUR
10+2.46 EUR
100+1.68 EUR
500+1.35 EUR
1000+1.24 EUR
2000+1.15 EUR
Mindestbestellmenge: 5
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IRS2332SPBF fundamentals-of-power-semiconductors
IRS2332SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPF031N13NM6ATMA1 IPF031N13NM6_Rev2.0_10-16-23.pdf
IPF031N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPF031N13NM6ATMA1 IPF031N13NM6_Rev2.0_10-16-23.pdf
IPF031N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.56 EUR
10+6.76 EUR
100+5.02 EUR
500+4.14 EUR
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CY62167DV30LL-70BVI download
CY62167DV30LL-70BVI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 299 Stücke:
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Anzahl Preis
3+5.91 EUR
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CYW55570MIUBGT
Hersteller: Infineon Technologies
Description: WI-FI AND WI-FI+BT COMBO
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW55572MIUBGT
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH WIFISMD
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Operating Temperature: -40°C ~ 85°C
Power - Output: 20dBm
Data Rate: 1.2Gbps
Protocol: 802.11ax, Bluetooth v5.3
Antenna Type: Antenna Not Included
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, SDIO, UART
Produkt ist nicht verfügbar
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TLS835B2ELVXUMA1 Infineon-TLS835B2EL%20V-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629a9d32134b14
TLS835B2ELVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS PROG 350MA SSOP14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Max): 6V
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.50V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.12 EUR
Mindestbestellmenge: 2500
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TLS835B2ELVXUMA1 Infineon-TLS835B2EL%20V-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629a9d32134b14
TLS835B2ELVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS PROG 350MA SSOP14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Max): 6V
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.50V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.20 EUR
25+2.08 EUR
100+1.77 EUR
250+1.66 EUR
500+1.45 EUR
1000+1.20 EUR
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CY8C4128AZI-S443 Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109
CY8C4128AZI-S443
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4147AXI-S443 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4147AXI-S443
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
10+7.34 EUR
25+6.94 EUR
80+6.02 EUR
230+5.71 EUR
440+5.12 EUR
Mindestbestellmenge: 3
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CY8C4146AZI-S443T Infineon-PSOC_4_PSOC_4100S_PLUS_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee556d86cff
CY8C4146AZI-S443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS700201ESPXUMA2 Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad
BTS700201ESPXUMA2
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Produkt ist nicht verfügbar
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PROF2BTS70041EPRDBTOBO1
PROF2BTS70041EPRDBTOBO1
Hersteller: Infineon Technologies
Description: Smart High-Side Power Switch
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPR
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.41 EUR
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FF150R12KE3B8BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C64215-56LFXC CY7C64215.pdf
CY7C64215-56LFXC
Hersteller: Infineon Technologies
Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FZ3600R17HE4HOSA2 Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203
FZ3600R17HE4HOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
Produkt ist nicht verfügbar
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FZ3600R17HE4PHPSA1 Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822
FZ3600R17HE4PHPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2176.10 EUR
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IPS65R1K0CEAKMA1 Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
IPS65R1K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
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CY8C20536A-24PVXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20536A-24PVXI
Hersteller: Infineon Technologies
Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.40 EUR
10+9.34 EUR
25+8.82 EUR
100+7.65 EUR
250+7.26 EUR
Mindestbestellmenge: 2
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CY95F633KNPMC-G-UNCGE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633KNPMC-G-UNCGE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
10+3.91 EUR
25+3.69 EUR
80+3.20 EUR
250+3.04 EUR
500+2.72 EUR
1000+2.30 EUR
2500+2.18 EUR
Mindestbestellmenge: 5
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CY95F634HNPMC-G-UNE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F634HNPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+4.69 EUR
25+4.43 EUR
80+3.84 EUR
250+3.64 EUR
500+3.27 EUR
1000+2.76 EUR
2500+2.62 EUR
Mindestbestellmenge: 4
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CY9BF406RAPMC-G-UNE1 download
CY9BF406RAPMC-G-UNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF116MAPMC-GNCGE2 Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.95 EUR
10+11.71 EUR
25+11.16 EUR
119+9.69 EUR
238+9.26 EUR
476+8.44 EUR
952+7.35 EUR
Mindestbestellmenge: 2
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CYT3DLABHBQ1AESGS Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLABHBQ1AESGS
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-QFP
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TQFP
Number of I/O: 108
DigiKey Programmable: Not Verified
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.59 EUR
10+54.04 EUR
25+51.61 EUR
80+46.15 EUR
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KIT1EDBAUXGANTOBO1
KIT1EDBAUXGANTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1EDB8275F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 2 Stücke:
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Anzahl Preis
1+232.18 EUR
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IMW65R015M2HXKSA1 Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8
IMW65R015M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.21 EUR
30+21.16 EUR
120+19.73 EUR
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IMW65R007M2HXKSA1 IMW65R007M2H.pdf
IMW65R007M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.62 EUR
30+37.38 EUR
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IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
237+2.08 EUR
Mindestbestellmenge: 237
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IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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IRGSL4B60KD1PBF fundamentals-of-power-semiconductors
IRGSL4B60KD1PBF
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
Produkt ist nicht verfügbar
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S25FL128SAGNFV011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV011
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAR 67-02V E6327 fundamentals-of-power-semiconductors
BAR 67-02V E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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CY8CKIT-062S2-AI Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372
CY8CKIT-062S2-AI
Hersteller: Infineon Technologies
Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.96 EUR
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FS1150R08A8P3LMCHPSA1 Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098
FS1150R08A8P3LMCHPSA1
Hersteller: Infineon Technologies
Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Produkt ist nicht verfügbar
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FS1150R08A8P3LBCHPSA1 Infineon-FS1150R08A8P3LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f157c21bb0095
FS1150R08A8P3LBCHPSA1
Hersteller: Infineon Technologies
Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+714.51 EUR
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KP467XTMA1 KP467.pdf
KP467XTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
Produkt ist nicht verfügbar
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KP467XTMA1 KP467.pdf
KP467XTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
5+4.73 EUR
10+4.52 EUR
25+4.27 EUR
50+4.10 EUR
100+3.94 EUR
500+3.62 EUR
1000+3.50 EUR
Mindestbestellmenge: 4
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AIMZH120R020M1TXKSA1 Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c
AIMZH120R020M1TXKSA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.13 EUR
30+25.69 EUR
120+24.01 EUR
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CY7C1041CV33-10BAJXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXE
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041BN-20ZSXA download
CY7C1041BN-20ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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CY7C1041CV33-15VC CY7C1041CV33%20RevH.pdf
CY7C1041CV33-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3261-RGB
Hersteller: Infineon Technologies
Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
Produkt ist nicht verfügbar
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