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CY9BF406NAPMC-G-UNE2 CY9BF406NAPMC-G-UNE2 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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KITXMC142GOTOBO1 KITXMC142GOTOBO1 Infineon Technologies Infineon-KIT_XMC14_2GO-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801915a63408673fe Description: KIT_XMC14_2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Produkt ist nicht verfügbar
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CY7C1441KVE33-133AXI CY7C1441KVE33-133AXI Infineon Technologies Infineon-CY7C1441KV33_CY7C1443KV33_CY7C1441KVE33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf21fc4994 Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1041GN30-10BVJXIT CY7C1041GN30-10BVJXIT Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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3+10.14 EUR
10+9.44 EUR
25+9.15 EUR
50+8.94 EUR
100+8.72 EUR
250+8.45 EUR
500+8.23 EUR
1000+8.03 EUR
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CY7C1011DV33-10ZSXI CY7C1011DV33-10ZSXI Infineon Technologies download description Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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10+8.76 EUR
25+8.34 EUR
40+8.14 EUR
135+7.65 EUR
270+7.38 EUR
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CY7C1019CV33-12ZXC CY7C1019CV33-12ZXC Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-15ZXI CY7C1019CV33-15ZXI Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019B-12VC CY7C1019B-12VC Infineon Technologies CY7C1019%2C10191B.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019D-10ZSXI CY7C1019D-10ZSXI Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10ZSXI CY7C1019DV33-10ZSXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019CV33-10ZXA CY7C1019CV33-10ZXA Infineon Technologies 5047 Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXI CY7C1049G-10ZSXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G18-15ZSXI CY7C1049G18-15ZSXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BV33-15VC CY7C1049BV33-15VC Infineon Technologies CY7C1049BV33.pdf Description: IC SRAM 4MBIT 15NS 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049CV33-15VC CY7C1049CV33-15VC Infineon Technologies CY7C1049CV33.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049CV33-15VXC CY7C1049CV33-15VXC Infineon Technologies Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049G18-15ZSXIT CY7C1049G18-15ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049B-15VXC CY7C1049B-15VXC Infineon Technologies CY7C1049B%20RevB.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049G-10ZSXIT CY7C1049G-10ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049GE30-10ZSXIT CY7C1049GE30-10ZSXIT Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-17VC CY7C1049BL-17VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BNL-17VC CY7C1049BNL-17VC Infineon Technologies CY7C1049BN.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bag
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-15VC CY7C1049B-15VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049B-20VC CY7C1049B-20VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1049BL-25VC CY7C1049BL-25VC Infineon Technologies CY7C1049B.pdf Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY90F867EPMC-G-90XX-SPE1 CY90F867EPMC-G-90XX-SPE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY90F867EPMC-G-9022-SPE1 CY90F867EPMC-G-9022-SPE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, WDT
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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CYTVII-B-H-8M-320-CPU CYTVII-B-H-8M-320-CPU Infineon Technologies infineon-traveo-ii-cytvii-b-h-8m-320-cpu-usermanual-en.pdf Description: THE CYTVII-B-H-8M-320-CPU, A 320
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
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CY7C68300C-56PVXC CY7C68300C-56PVXC Infineon Technologies download description Description: IC USB 2.0 BRIDGE AT2LP 56-SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 56-SSOP
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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CY7C68300C-56LTXC CY7C68300C-56LTXC Infineon Technologies download Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
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CY7C68320C-100AXC CY7C68320C-100AXC Infineon Technologies download Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
DigiKey Programmable: Not Verified
Supplier Device Package: 100-TQFP (14x20)
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 100-LQFP
Packaging: Tray
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IDWD140E120D7XKSA1 IDWD140E120D7XKSA1 Infineon Technologies IDWD140E120D7_Rev1.00_12-15-23.pdf Description: DIODE STD 1200V 207A PGTO24722
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-2-2
Current - Average Rectified (Io): 207A
Technology: Standard
Reverse Recovery Time (trr): 225 ns
Speed: Fast Recovery =< 500ns, > 5A (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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CY8C4024LQSS411UXQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU
Packaging: Tray
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CY8C4025LQSS411UXQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
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IMBG120R078M2HXTMA1 IMBG120R078M2HXTMA1 Infineon Technologies infineon-imbg120r078m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
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IMBG120R078M2HXTMA1 IMBG120R078M2HXTMA1 Infineon Technologies infineon-imbg120r078m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
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IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Infineon Technologies infineon-imbg65r050m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMBG65R050M2HXTMA1 IMBG65R050M2HXTMA1 Infineon Technologies infineon-imbg65r050m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMBG120R053M2HXTMA1 IMBG120R053M2HXTMA1 Infineon Technologies infineon-imbg120r053m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 41A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
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IMBG120R053M2HXTMA1 IMBG120R053M2HXTMA1 Infineon Technologies infineon-imbg120r053m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 41A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
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2EP101RXTMA1 2EP101RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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2EP100RXTMA1 2EP100RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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2EP100RXTMA1 2EP100RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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2EP110RXTMA1 2EP110RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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2EP110RXTMA1 2EP110RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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CYT4DNJBECQ1BZSGS CYT4DNJBECQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBECQ1BZSGST CYT4DNJBECQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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IKQB120N75CP2AKSA1 IKQB120N75CP2AKSA1 Infineon Technologies Infineon-IKQB120N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a80df1e65 Description: IGBT 750V 150A TO247-3-51
Power - Max: 577 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 481 nC
Test Condition: 450V, 120A, 4.8Ohm, 15V
Switching Energy: 6.4mJ (on), 3.4mJ (off)
Td (on/off) @ 25°C: 57ns/285ns
Supplier Device Package: PG-TO247-3-51
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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ICE3B0565JGXUMA1 ICE3B0565JGXUMA1 Infineon Technologies Datasheet_CoolSET-F3JG_v2_0_14Nov2006.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f96f3f62 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
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ICE3B0565JFKLA1 ICE3B0565JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
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141+3.9 EUR
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ICE3B0565XKLA1 ICE3B0565XKLA1 Infineon Technologies Datasheet_CoolSET-F3_v23_2Apr2013.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 25 W
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IM241M6S1JALMA1 IM241M6S1JALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
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FZ1000R33HL3BPSA1 FZ1000R33HL3BPSA1 Infineon Technologies Infineon-FZ1000R33HL3-DS-v03_02-EN.pdf?fileId=db3a3043156fd57301158e123466040c Description: IGBT MOD 3300V 1000A 1600W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 385 Stücke:
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FF1000R17IE4BOSA1 FF1000R17IE4BOSA1 Infineon Technologies Infineon-FF1000R17IE4-DS-v03_02-en_de.pdf?fileId=db3a30431ff9881501201dc994a34980 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 14 Stücke:
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1+1044.72 EUR
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FF1000R17IE4DPB2BOSA1 FF1000R17IE4DPB2BOSA1 Infineon Technologies Infineon-FF1000R17IE4DP_B2-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153f0cfe83642bd Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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FF1000R17IE4B60BPSA1 Infineon Technologies infineon-ff1000r17ie4-ds-en-cn.pdf?fileId=db3a30433e16edf9013e1d1e2117209b Description: IGBT MODULE 1700V 1390A 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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FZ1000R45KL3B5NPSA1 Infineon Technologies Infineon-FZ1000R45KL3_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182aae3792908a2 Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.05V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: A-IHV130
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 185 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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SPINDLE2GOTOBO1 SPINDLE2GOTOBO1 Infineon Technologies Description: SPINDLE2GO
Utilized IC / Part: Sensor2Go
Accessory Type: Spindle
For Use With/Related Products: Sensor2Go
Packaging: Box
auf Bestellung 1 Stücke:
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1+68.78 EUR
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IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 1500 Stücke:
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1011+0.55 EUR
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LITEDCDCSBCBOARDTOBO1 LITEDCDCSBCBOARDTOBO1 Infineon Technologies Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a Description: EVAL BOARD FOR TLE9471-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9471-3ES
auf Bestellung 1 Stücke:
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1+250.28 EUR
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CY9BF406NAPMC-G-UNE2
CY9BF406NAPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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KITXMC142GOTOBO1 Infineon-KIT_XMC14_2GO-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801915a63408673fe
KITXMC142GOTOBO1
Hersteller: Infineon Technologies
Description: KIT_XMC14_2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Produkt ist nicht verfügbar
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CY7C1441KVE33-133AXI Infineon-CY7C1441KV33_CY7C1443KV33_CY7C1441KVE33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf21fc4994
CY7C1441KVE33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041GN30-10BVJXIT Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN30-10BVJXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 3417 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.14 EUR
10+9.44 EUR
25+9.15 EUR
50+8.94 EUR
100+8.72 EUR
250+8.45 EUR
500+8.23 EUR
1000+8.03 EUR
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CY7C1011DV33-10ZSXI description download
CY7C1011DV33-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.87 EUR
10+8.76 EUR
25+8.34 EUR
40+8.14 EUR
135+7.65 EUR
270+7.38 EUR
Mindestbestellmenge: 3 Stücke
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CY7C1019CV33-12ZXC CY7C1019CV33%20RevG.pdf
CY7C1019CV33-12ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019CV33-15ZXI CY7C1019CV33%20RevG.pdf
CY7C1019CV33-15ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019B-12VC CY7C1019%2C10191B.pdf
CY7C1019B-12VC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10ZSXI Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019DV33-10ZSXI description download
CY7C1019DV33-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019CV33-10ZXA 5047
CY7C1019CV33-10ZXA
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049G-10ZSXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049G18-15ZSXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G18-15ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 270 Stücke
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CY7C1049BV33-15VC CY7C1049BV33.pdf
CY7C1049BV33-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT 15NS 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+19.39 EUR
Mindestbestellmenge: 31 Stücke
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CY7C1049CV33-15VC CY7C1049CV33.pdf
CY7C1049CV33-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 646 Stücke
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CY7C1049CV33-15VXC
CY7C1049CV33-15VXC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 646 Stücke
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CY7C1049G18-15ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G18-15ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1049B-15VXC CY7C1049B%20RevB.pdf
CY7C1049B-15VXC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 570 Stücke
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CY7C1049G-10ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1049GE30-10ZSXIT Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049GE30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049BL-17VC CY7C1049B.pdf
CY7C1049BL-17VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049BNL-17VC CY7C1049BN.pdf
CY7C1049BNL-17VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bag
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 17ns
Memory Interface: Parallel
Access Time: 17 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049B-15VC CY7C1049B.pdf
CY7C1049B-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049B-20VC CY7C1049B.pdf
CY7C1049B-20VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1049BL-25VC CY7C1049B.pdf
CY7C1049BL-25VC
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F867EPMC-G-90XX-SPE1
CY90F867EPMC-G-90XX-SPE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F867EPMC-G-9022-SPE1
CY90F867EPMC-G-9022-SPE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, WDT
Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CYTVII-B-H-8M-320-CPU infineon-traveo-ii-cytvii-b-h-8m-320-cpu-usermanual-en.pdf
CYTVII-B-H-8M-320-CPU
Hersteller: Infineon Technologies
Description: THE CYTVII-B-H-8M-320-CPU, A 320
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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1+1652.17 EUR
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CY7C68300C-56PVXC description download
CY7C68300C-56PVXC
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56-SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 56-SSOP
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY7C68300C-56LTXC download
CY7C68300C-56LTXC
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C68320C-100AXC download
CY7C68320C-100AXC
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
DigiKey Programmable: Not Verified
Supplier Device Package: 100-TQFP (14x20)
Standards: USB 2.0
Protocol: USB
Current - Supply: 50mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Interface: ATA
Function: Bridge, USB to ATA
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IDWD140E120D7XKSA1 IDWD140E120D7_Rev1.00_12-15-23.pdf
IDWD140E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 207A PGTO24722
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 140 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-2-2
Current - Average Rectified (Io): 207A
Technology: Standard
Reverse Recovery Time (trr): 225 ns
Speed: Fast Recovery =< 500ns, > 5A (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 184 Stücke:
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3+10.06 EUR
30+6.58 EUR
120+5.52 EUR
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CY8C4024LQSS411UXQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4025LQSS411UXQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
Produkt ist nicht verfügbar
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IMBG120R078M2HXTMA1 infineon-imbg120r078m2h-datasheet-en.pdf
IMBG120R078M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
auf Bestellung 1000 Stücke:
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1000+5.69 EUR
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IMBG120R078M2HXTMA1 infineon-imbg120r078m2h-datasheet-en.pdf
IMBG120R078M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 78.1mOhm @ 8.9A, 18V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 800 V
auf Bestellung 1566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.52 EUR
10+9.84 EUR
50+7.83 EUR
100+7.19 EUR
500+6.95 EUR
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IMBG65R050M2HXTMA1 infineon-imbg65r050m2h-datasheet-en.pdf
IMBG65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 1000 Stücke:
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1000+6.6 EUR
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IMBG65R050M2HXTMA1 infineon-imbg65r050m2h-datasheet-en.pdf
IMBG65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 1018 Stücke:
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2+16.29 EUR
10+11.1 EUR
100+8.16 EUR
500+8.08 EUR
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IMBG120R053M2HXTMA1 infineon-imbg120r053m2h-datasheet-en.pdf
IMBG120R053M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 41A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R053M2HXTMA1 infineon-imbg120r053m2h-datasheet-en.pdf
IMBG120R053M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 41A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 52.6mOhm @ 13.2A, 18V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
auf Bestellung 233 Stücke:
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2+17.67 EUR
10+12.07 EUR
50+9.66 EUR
100+8.89 EUR
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2EP101RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP101RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
auf Bestellung 4980 Stücke:
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8+2.7 EUR
11+1.98 EUR
25+1.78 EUR
100+1.58 EUR
250+1.49 EUR
500+1.43 EUR
1000+1.42 EUR
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2EP100RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP100RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
auf Bestellung 5000 Stücke:
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5000+1.31 EUR
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2EP100RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP100RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
auf Bestellung 9700 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
11+1.98 EUR
25+1.78 EUR
100+1.58 EUR
250+1.49 EUR
500+1.43 EUR
1000+1.42 EUR
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2EP110RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP110RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
Produkt ist nicht verfügbar
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2EP110RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP110RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.62 EUR
500+1.56 EUR
1000+1.55 EUR
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CYT4DNJBECQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBECQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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CYT4DNJBECQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBECQ1BZSGST
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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IKQB120N75CP2AKSA1 Infineon-IKQB120N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a80df1e65
IKQB120N75CP2AKSA1
Hersteller: Infineon Technologies
Description: IGBT 750V 150A TO247-3-51
Power - Max: 577 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 481 nC
Test Condition: 450V, 120A, 4.8Ohm, 15V
Switching Energy: 6.4mJ (on), 3.4mJ (off)
Td (on/off) @ 25°C: 57ns/285ns
Supplier Device Package: PG-TO247-3-51
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 165 Stücke:
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2+19.1 EUR
30+11.29 EUR
120+9.58 EUR
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ICE3B0565JGXUMA1 Datasheet_CoolSET-F3JG_v2_0_14Nov2006.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f96f3f62
ICE3B0565JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
auf Bestellung 9655 Stücke:
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ICE3B0565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B0565JFKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Power (Watts): 25 W
auf Bestellung 141 Stücke:
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141+3.9 EUR
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ICE3B0565XKLA1 Datasheet_CoolSET-F3_v23_2Apr2013.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B0565XKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 25 W
auf Bestellung 3265 Stücke:
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212+2.58 EUR
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IM241M6S1JALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241M6S1JALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 240 Stücke:
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2+11.94 EUR
15+8.85 EUR
30+8.38 EUR
105+7.71 EUR
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FZ1000R33HL3BPSA1 Infineon-FZ1000R33HL3-DS-v03_02-EN.pdf?fileId=db3a3043156fd57301158e123466040c
FZ1000R33HL3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 1000A 1600W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 385 Stücke:
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FF1000R17IE4BOSA1 Infineon-FF1000R17IE4-DS-v03_02-en_de.pdf?fileId=db3a30431ff9881501201dc994a34980
FF1000R17IE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 14 Stücke:
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FF1000R17IE4DPB2BOSA1 Infineon-FF1000R17IE4DP_B2-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153f0cfe83642bd
FF1000R17IE4DPB2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
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FF1000R17IE4B60BPSA1 infineon-ff1000r17ie4-ds-en-cn.pdf?fileId=db3a30433e16edf9013e1d1e2117209b
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1390A 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1000R45KL3B5NPSA1 Infineon-FZ1000R45KL3_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182aae3792908a2
Hersteller: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.05V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: A-IHV130
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 185 nF @ 25 V
Produkt ist nicht verfügbar
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SPINDLE2GOTOBO1
SPINDLE2GOTOBO1
Hersteller: Infineon Technologies
Description: SPINDLE2GO
Utilized IC / Part: Sensor2Go
Accessory Type: Spindle
For Use With/Related Products: Sensor2Go
Packaging: Box
auf Bestellung 1 Stücke:
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1+68.78 EUR
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IPS060N03LGAKMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPS060N03LGAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 1500 Stücke:
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1011+0.55 EUR
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LITEDCDCSBCBOARDTOBO1 Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a
LITEDCDCSBCBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9471-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9471-3ES
auf Bestellung 1 Stücke:
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