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FF17MR12W1M1HB17BPSA1 FF17MR12W1M1HB17BPSA1 Infineon Technologies Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Supplier Device Package: AG-EASY1B
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IPP80R750P7XKSA1 IPP80R750P7XKSA1 Infineon Technologies Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2 Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
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MB3793-34DPNF-G-JN-ERE1 MB3793-34DPNF-G-JN-ERE1 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 3.4V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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MB3793-34DPNF-G-JN-ERE1 MB3793-34DPNF-G-JN-ERE1 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 3.4V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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CY8CMBR2044-24LKXI CY8CMBR2044-24LKXI Infineon Technologies Infineon-CY8CMBR2044_Four_Button_CapSense_Controller-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaca3343e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU CAPSENSE 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.75V ~ 5.5V
Current - Supply: 4mA
Number of Inputs: Up to 4
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
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S29GL256S11DHVV23 S29GL256S11DHVV23 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S6BP501A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
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S6BP501A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
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S6BP502A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
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S6BP502A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
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TLE5309DE5201XUMA1 TLE5309DE5201XUMA1 Infineon Technologies TLE5309D.pdf Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
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CY14B256K-SP25XC CY14B256K-SP25XC Infineon Technologies cy14b256k_8.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY14B101K-SP25XC CY14B101K-SP25XC Infineon Technologies CY14B101K.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IPP60R180CM8XKSA1 IPP60R180CM8XKSA1 Infineon Technologies Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IMTA65R060M2HXTMA1 IMTA65R060M2HXTMA1 Infineon Technologies Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R060M2HXTMA1 IMTA65R060M2HXTMA1 Infineon Technologies Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R050M2HXTMA1 IMTA65R050M2HXTMA1 Infineon Technologies Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R050M2HXTMA1 IMTA65R050M2HXTMA1 Infineon Technologies Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R040M2HXTMA1 IMTA65R040M2HXTMA1 Infineon Technologies Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R040M2HXTMA1 IMTA65R040M2HXTMA1 Infineon Technologies Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R020M2HXTMA1 IMTA65R020M2HXTMA1 Infineon Technologies Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R020M2HXTMA1 IMTA65R020M2HXTMA1 Infineon Technologies Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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FZ1200R45HL4BPSA1 Infineon Technologies Description: IGBT MODULE 4500V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.2 kA
Voltage - Collector Emitter Breakdown (Max): 4.3 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 223000 pF @ 25 V
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 1.2kA
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BC817K25E6433HTMA1 BC817K25E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K25E6433HTMA1 BC817K25E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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S25FL512SAGBHEA10 S25FL512SAGBHEA10 Infineon Technologies Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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FS3L30R07W2H3FB11BPSA2 FS3L30R07W2H3FB11BPSA2 Infineon Technologies Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9 Description: IGBT MOD 650V 30A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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S6BP401AL3SN1B000 Infineon Technologies Description: IC REG
Packaging: Tape & Reel (TR)
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CY2548QC004 CY2548QC004 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2548QC003 CY2548QC003 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2545QI CY2545QI Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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ISC750P10LMATMA1 ISC750P10LMATMA1 Infineon Technologies Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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ISC750P10LMATMA1 ISC750P10LMATMA1 Infineon Technologies Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1519 Stücke:
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500+1.80 EUR
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FF200R12KT3HOSA1 FF200R12KT3HOSA1 Infineon Technologies Infineon-FF200R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43417c15f86 Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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FF150R12KT3GHOSA1 FF150R12KT3GHOSA1 Infineon Technologies Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82 Description: IGBT MOD 1200V 225A 780W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IAUC40N08S5L140ATMA1 IAUC40N08S5L140ATMA1 Infineon Technologies Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC40N08S5L140ATMA1 IAUC40N08S5L140ATMA1 Infineon Technologies Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1982 Stücke:
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8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
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IRAMS06UP60B-2 IRAMS06UP60B-2 Infineon Technologies IRAMS06UP60B.pdf Description: IC PWR MOD PLUG-N-DRIVE 600V 6A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPB80N04S2L03ATMA1 IPB80N04S2L03ATMA1 Infineon Technologies IPB%2CIPP80N04S2L-03.pdf Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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REFSHA35IMD111TSYSTOBO1 REFSHA35IMD111TSYSTOBO1 Infineon Technologies Infineon-IMD110T-DataSheet-v01_01-EN.pdf?fileId=5546d462773f93240177489a1dcf0a7d Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs
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CY8C4124LQE-S423 CY8C4124LQE-S423 Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S423T CY8C4124LQE-S423T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY7C65631-56LTXCT CY7C65631-56LTXCT Infineon Technologies Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+8.43 EUR
Mindestbestellmenge: 2000
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CY7C65631-56LTXCT CY7C65631-56LTXCT Infineon Technologies Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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ISC078N12NM6ATMA1 ISC078N12NM6ATMA1 Infineon Technologies Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Produkt ist nicht verfügbar
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ISC078N12NM6ATMA1 ISC078N12NM6ATMA1 Infineon Technologies Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 4885 Stücke:
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4+4.98 EUR
10+3.24 EUR
100+2.24 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.58 EUR
Mindestbestellmenge: 4
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IPI80N04S4L04AKSA1 IPI80N04S4L04AKSA1 Infineon Technologies IPx80N04S4L-04.pdf Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
650+0.75 EUR
Mindestbestellmenge: 650
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IPB80N04S3H4ATMA1 IPB80N04S3H4ATMA1 Infineon Technologies IPx80N04S3-H4.pdf Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 65µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13200 Stücke:
Lieferzeit 10-14 Tag (e)
406+1.15 EUR
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IPI80N04S303AKSA1 IPI80N04S303AKSA1 Infineon Technologies IPx80N04S3-03.pdf Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 172000 Stücke:
Lieferzeit 10-14 Tag (e)
251+1.95 EUR
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IPQC60T017S7XTMA1 IPQC60T017S7XTMA1 Infineon Technologies IPQC60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPQC60T017S7XTMA1 IPQC60T017S7XTMA1 Infineon Technologies IPQC60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T017S7AXTMA1 IPDQ60T017S7AXTMA1 Infineon Technologies IPDQ60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPDQ60T017S7AXTMA1 IPDQ60T017S7AXTMA1 Infineon Technologies IPDQ60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7AXTMA1 Infineon Technologies IPQC60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7AXTMA1 Infineon Technologies IPQC60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRGP4062-EPBF IRGP4062-EPBF Infineon Technologies IRGP4062-EPBF.pdf Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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BGS312MC27-2IE6433XUSA1 Infineon Technologies Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.72 EUR
Mindestbestellmenge: 701
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S29GL064N90BFI030 S29GL064N90BFI030 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FAI010 S29GL064N90FAI010 Infineon Technologies S29GL064N_032N_RevB_5-26-17.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064N90TFI043 S29GL064N90TFI043 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF17MR12W1M1HB17BPSA1
FF17MR12W1M1HB17BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Supplier Device Package: AG-EASY1B
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+183.52 EUR
24+146.99 EUR
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IPP80R750P7XKSA1 Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2
IPP80R750P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+1.46 EUR
Mindestbestellmenge: 334
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MB3793-34DPNF-G-JN-ERE1 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB3793-34DPNF-G-JN-ERE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 3.4V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB3793-34DPNF-G-JN-ERE1 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB3793-34DPNF-G-JN-ERE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 3.4V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CMBR2044-24LKXI Infineon-CY8CMBR2044_Four_Button_CapSense_Controller-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaca3343e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2044-24LKXI
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.75V ~ 5.5V
Current - Supply: 4mA
Number of Inputs: Up to 4
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+4.36 EUR
25+4.01 EUR
100+3.61 EUR
Mindestbestellmenge: 4
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S29GL256S11DHVV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S11DHVV23
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6BP501A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S6BP501A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S6BP502A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S6BP502A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5309DE5201XUMA1 TLE5309D.pdf
TLE5309DE5201XUMA1
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 29997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
68+7.51 EUR
Mindestbestellmenge: 68
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CY14B256K-SP25XC cy14b256k_8.pdf
CY14B256K-SP25XC
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B101K-SP25XC CY14B101K.pdf
CY14B101K-SP25XC
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP60R180CM8XKSA1
IPP60R180CM8XKSA1
Hersteller: Infineon Technologies
Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
Mindestbestellmenge: 5
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IMTA65R060M2HXTMA1 Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839
IMTA65R060M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R060M2HXTMA1 Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839
IMTA65R060M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
10+8.58 EUR
100+7.05 EUR
Mindestbestellmenge: 2
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IMTA65R050M2HXTMA1 Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a
IMTA65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R050M2HXTMA1 Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a
IMTA65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.53 EUR
10+9.80 EUR
100+8.17 EUR
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IMTA65R040M2HXTMA1 Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3
IMTA65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R040M2HXTMA1 Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3
IMTA65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 150 Stücke:
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Anzahl Preis
2+15.89 EUR
10+11.83 EUR
100+9.91 EUR
Mindestbestellmenge: 2
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IMTA65R020M2HXTMA1 Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa
IMTA65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R020M2HXTMA1 Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa
IMTA65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.53 EUR
10+17.94 EUR
100+16.49 EUR
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FZ1200R45HL4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 4500V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.2 kA
Voltage - Collector Emitter Breakdown (Max): 4.3 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 223000 pF @ 25 V
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 1.2kA
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2544.15 EUR
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BC817K25E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K25E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K25E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K25E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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S25FL512SAGBHEA10 Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f
S25FL512SAGBHEA10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS3L30R07W2H3FB11BPSA2 Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9
FS3L30R07W2H3FB11BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 30A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+151.23 EUR
Mindestbestellmenge: 4
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S6BP401AL3SN1B000
Hersteller: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY2548QC004 download
CY2548QC004
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2548QC003 download
CY2548QC003
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QI Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC750P10LMATMA1 Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef
ISC750P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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ISC750P10LMATMA1 Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef
ISC750P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.38 EUR
10+3.05 EUR
100+2.13 EUR
500+1.80 EUR
Mindestbestellmenge: 5
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FF200R12KT3HOSA1 Infineon-FF200R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43417c15f86
FF200R12KT3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+237.68 EUR
Mindestbestellmenge: 3
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FF150R12KT3GHOSA1 Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82
FF150R12KT3GHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+146.59 EUR
Mindestbestellmenge: 4
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IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
IAUC40N08S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
IAUC40N08S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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IRAMS06UP60B-2 IRAMS06UP60B.pdf
IRAMS06UP60B-2
Hersteller: Infineon Technologies
Description: IC PWR MOD PLUG-N-DRIVE 600V 6A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPB80N04S2L03ATMA1 IPB%2CIPP80N04S2L-03.pdf
IPB80N04S2L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.70 EUR
Mindestbestellmenge: 286
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REFSHA35IMD111TSYSTOBO1 Infineon-IMD110T-DataSheet-v01_01-EN.pdf?fileId=5546d462773f93240177489a1dcf0a7d
REFSHA35IMD111TSYSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.46 EUR
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CY8C4124LQE-S423
CY8C4124LQE-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124LQE-S423T
CY8C4124LQE-S423T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY7C65631-56LTXCT Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
CY7C65631-56LTXCT
Hersteller: Infineon Technologies
Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+8.43 EUR
Mindestbestellmenge: 2000
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CY7C65631-56LTXCT Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
CY7C65631-56LTXCT
Hersteller: Infineon Technologies
Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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ISC078N12NM6ATMA1 Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7
ISC078N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Produkt ist nicht verfügbar
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ISC078N12NM6ATMA1 Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7
ISC078N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.24 EUR
100+2.24 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.58 EUR
Mindestbestellmenge: 4
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IPI80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPI80N04S4L04AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
650+0.75 EUR
Mindestbestellmenge: 650
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N04S3H4ATMA1 IPx80N04S3-H4.pdf
IPB80N04S3H4ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 65µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
406+1.15 EUR
Mindestbestellmenge: 406
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IPI80N04S303AKSA1 IPx80N04S3-03.pdf
IPI80N04S303AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 172000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
251+1.95 EUR
Mindestbestellmenge: 251
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IPQC60T017S7XTMA1 IPQC60T017S7.pdf
IPQC60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPQC60T017S7XTMA1 IPQC60T017S7.pdf
IPQC60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T017S7AXTMA1 IPDQ60T017S7A_Rev2.0_11-30-23.pdf
IPDQ60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPDQ60T017S7AXTMA1 IPDQ60T017S7A_Rev2.0_11-30-23.pdf
IPDQ60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7A_Rev2.0_11-30-23.pdf
IPQC60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7A_Rev2.0_11-30-23.pdf
IPQC60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRGP4062-EPBF IRGP4062-EPBF.pdf
IRGP4062-EPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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BGS312MC27-2IE6433XUSA1
Hersteller: Infineon Technologies
Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
701+0.72 EUR
Mindestbestellmenge: 701
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S29GL064N90BFI030 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90BFI030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL064N90FAI010 S29GL064N_032N_RevB_5-26-17.pdf
S29GL064N90FAI010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064N90TFI043 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90TFI043
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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