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IRGP4750D-EPBF IRGP4750D-EPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4750DPBF IRGP4750DPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
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2+9.96 EUR
10+6.67 EUR
100+4.81 EUR
500+4.02 EUR
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IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
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CY62148ELL-45SXI CY62148ELL-45SXI Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
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DD560N45KHPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
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TD210N16KOFHPSA1 TD210N16KOFHPSA1 Infineon Technologies Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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DD710N16KS20HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
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T2810N16TOFVTXPSA1 T2810N16TOFVTXPSA1 Infineon Technologies Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042 Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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TD120N16SOFHPSA1 TD120N16SOFHPSA1 Infineon Technologies Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47 Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
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DD220N16SHPSA1 DD220N16SHPSA1 Infineon Technologies Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54 Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
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IPTG025N08NM5ATMA1 IPTG025N08NM5ATMA1 Infineon Technologies Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
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500+3.25 EUR
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IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
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IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
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500+6.06 EUR
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ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
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ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
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CY90F546GPFR-GE1 CY90F546GPFR-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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KITXMC1300DCV1TOBO1 KITXMC1300DCV1TOBO1 Infineon Technologies Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
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FS450R17OE4BOSA1 FS450R17OE4BOSA1 Infineon Technologies Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF1500R12IE5PBPSA1 FF1500R12IE5PBPSA1 Infineon Technologies Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 297 Stücke:
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FF1500R12IE5PBPSA1 FF1500R12IE5PBPSA1 Infineon Technologies Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
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FF150R17ME3GBOSA1 FF150R17ME3GBOSA1 Infineon Technologies Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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C161SLM3VAABXUMA1 C161SLM3VAABXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf_folderid=db3a304412b407950112b43a56c8703a&fileid=db3a304412b407950112b43a5758703b.pdf Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
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IRF3007PBF IRF3007PBF Infineon Technologies irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908 description Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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2SD106AI17ULHPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
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TDA22590XUMA1 TDA22590XUMA1 Infineon Technologies infineon-tda22590-datasheet-en.pdf Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
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TDA22594AXUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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CY14B256PA-SFXI CY14B256PA-SFXI Infineon Technologies Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Description: IC NVSRAM 256KBIT SPI 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 16-SOIC
Memory Format: NVSRAM
Clock Frequency: 40 MHz
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Technology: NVSRAM (Non-Volatile SRAM)
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AUXHBFB3306 Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C63231A-SC CY7C63231A-SC Infineon Technologies CY7C63221A%2C63231A.pdf Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 Infineon Technologies infineon-ipu95r2k0p7-datasheet-en.pdf Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
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ISC110N12NM6ATMA1 ISC110N12NM6ATMA1 Infineon Technologies Infineon-ISC110N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becda4e714e7b Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: SuperSO8
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DZ1100N22KHPSA2 DZ1100N22KHPSA2 Infineon Technologies Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
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IRFB7440GPBF IRFB7440GPBF Infineon Technologies irfb7440gpbf.pdf?fileId=5546d462533600a401535616b56d1e59 Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
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AUIRFS4610 AUIRFS4610 Infineon Technologies auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423 Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
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CY7C25632KV18-500BZXC CY7C25632KV18-500BZXC Infineon Technologies Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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S29AS016J70BHI043 S29AS016J70BHI043 Infineon Technologies Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC FLASH 16MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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S29GL064S70BHI043 S29GL064S70BHI043 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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S29GL064S90FHI040 S29GL064S90FHI040 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 64FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL064S90BHI043 S29GL064S90BHI043 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 48FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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S29GL064S90BHI040 S29GL064S90BHI040 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 48FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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IDD09SG60CXTMA2 IDD09SG60CXTMA2 Infineon Technologies Infineon-IDD09SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd6a2f7d1aab Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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AUIRG4PH50SXKMA1 Infineon Technologies Description: DISCRETE SWITCHES
Packaging: Tube
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CHL8325A-03CRT CHL8325A-03CRT Infineon Technologies IR3541_CHL8325A_B_v1.09_6-21-13.pdf Description: IC REG BUCK 40VQFN
Number of Outputs: 5
Clock Sync: No
Output Phases: 5
Serial Interfaces: I2C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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FF225R12ME4PBPSA1 FF225R12ME4PBPSA1 Infineon Technologies Infineon-FF225R12ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e4257d506a6 Description: IGBT MODULE 1200V 450A MODULE
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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S29GL512T10TFI013 S29GL512T10TFI013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T10TFI013 S29GL512T10TFI013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
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2+14.68 EUR
10+13.62 EUR
25+13.2 EUR
50+12.89 EUR
100+12.57 EUR
250+12.19 EUR
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EVALFFXMR20KM1HDRTOBO1 EVALFFXMR20KM1HDRTOBO1 Infineon Technologies Infineon-EVAL-FFXMR20KM1HDR-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86aa5f8657ad Description: EVAL BOARD FOR FF3MR20KM1H
Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Primary Attributes: Isolated
Supplied Contents: Board(s)
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Type: Power Management
Function: MOSFET
Packaging: Box
Produkt ist nicht verfügbar
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FF4MR12W2M1HB11BPSA1 FF4MR12W2M1HB11BPSA1 Infineon Technologies Infineon-FF4MR12W2M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1b75ed4ec7 Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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FF75R12W1T7EB11BPSA1 FF75R12W1T7EB11BPSA1 Infineon Technologies FF75R12W1T7EB11BPSA1.pdf Description: IGBT MODULE 1200V 65A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
auf Bestellung 23 Stücke:
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CY15V108QN-20LPXI CY15V108QN-20LPXI Infineon Technologies CY15B108QN_CY15V108QN_RevB_5-25-22.pdf Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXC CY15V108QI-20LPXC Infineon Technologies Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee73ee37021&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD8V0L1B-02LRH E6433 ESD8V0L1B-02LRH E6433 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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IMBG120R116M2HXTMA1 IMBG120R116M2HXTMA1 Infineon Technologies infineon-imbg120r116m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 21.2A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
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IMBG120R116M2HXTMA1 IMBG120R116M2HXTMA1 Infineon Technologies infineon-imbg120r116m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 21.2A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
auf Bestellung 700 Stücke:
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2+9.54 EUR
10+6.41 EUR
100+4.63 EUR
500+4.62 EUR
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IPB80N06S2L09ATMA2 IPB80N06S2L09ATMA2 Infineon Technologies Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333f475ad4&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRGP4750D-EPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4750DPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750DPBF
Hersteller: Infineon Technologies
Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
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AnzahlPreis
2+9.96 EUR
10+6.67 EUR
100+4.81 EUR
500+4.02 EUR
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IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 797 Stücke:
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AnzahlPreis
2+9.56 EUR
10+6.4 EUR
100+4.6 EUR
500+3.84 EUR
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CY62148ELL-45SXI Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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DD560N45KHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
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TD210N16KOFHPSA1 Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd
TD210N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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2+253.98 EUR
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DD710N16KS20HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
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T2810N16TOFVTXPSA1 Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042
T2810N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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TD120N16SOFHPSA1 Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47
TD120N16SOFHPSA1
Hersteller: Infineon Technologies
Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
auf Bestellung 101 Stücke:
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AnzahlPreis
1+54.14 EUR
12+39.05 EUR
36+34.84 EUR
84+34.69 EUR
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DD220N16SHPSA1 Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54
DD220N16SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Produkt ist nicht verfügbar
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IPTG025N08NM5ATMA1 Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d
IPTG025N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.34 EUR
10+4.86 EUR
100+3.45 EUR
500+3.25 EUR
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IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
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IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1346 Stücke:
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AnzahlPreis
2+13.53 EUR
10+9.22 EUR
100+6.78 EUR
500+6.06 EUR
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ISC130N20NM6ATMA1 Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29
ISC130N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 5000 Stücke:
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AnzahlPreis
5000+3.72 EUR
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ISC130N20NM6ATMA1 Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29
ISC130N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 5450 Stücke:
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AnzahlPreis
3+7.2 EUR
10+6.3 EUR
100+4.56 EUR
500+4.55 EUR
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CY90F546GPFR-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F546GPFR-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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KITXMC1300DCV1TOBO1 Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b
KITXMC1300DCV1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
auf Bestellung 4 Stücke:
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1+124.19 EUR
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FS450R17OE4BOSA1 Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b
FS450R17OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
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1+817.63 EUR
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FF1500R12IE5PBPSA1 Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b
FF1500R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 297 Stücke:
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AnzahlPreis
1+1443.83 EUR
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FF1500R12IE5PBPSA1 Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b
FF1500R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 2 Stücke:
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AnzahlPreis
1+1207.04 EUR
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FF150R17ME3GBOSA1 Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c
FF150R17ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar
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C161SLM3VAABXUMA1 c161s_ds_v1.0_200311.pdf_folderid=db3a304412b407950112b43a56c8703a&fileid=db3a304412b407950112b43a5758703b.pdf
C161SLM3VAABXUMA1
Hersteller: Infineon Technologies
Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
auf Bestellung 2247 Stücke:
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AnzahlPreis
67+7.31 EUR
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IRF3007PBF description irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908
IRF3007PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 109927 Stücke:
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AnzahlPreis
231+1.94 EUR
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2SD106AI17ULHPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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TDA22590XUMA1 infineon-tda22590-datasheet-en.pdf
TDA22590XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
Produkt ist nicht verfügbar
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TDA22594AXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
CY14B256PA-SFXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 16-SOIC
Memory Format: NVSRAM
Clock Frequency: 40 MHz
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Technology: NVSRAM (Non-Volatile SRAM)
auf Bestellung 456 Stücke:
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AnzahlPreis
1+18.15 EUR
10+16.1 EUR
46+14.87 EUR
92+14.35 EUR
138+14.05 EUR
276+13.55 EUR
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AUXHBFB3306
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C63231A-SC CY7C63221A%2C63231A.pdf
CY7C63231A-SC
Hersteller: Infineon Technologies
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 64370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
644+0.71 EUR
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IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 11569 Stücke:
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AnzahlPreis
246+1.85 EUR
Mindestbestellmenge: 246 Stücke
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IPU95R2K0P7AKMA1 infineon-ipu95r2k0p7-datasheet-en.pdf
IPU95R2K0P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 23457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
405+1.12 EUR
Mindestbestellmenge: 405 Stücke
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ISC110N12NM6ATMA1 Infineon-ISC110N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018becda4e714e7b
ISC110N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: SuperSO8
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.9 EUR
10+1.94 EUR
100+1.32 EUR
500+1.06 EUR
1000+0.99 EUR
Mindestbestellmenge: 7 Stücke
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DZ1100N22KHPSA2 Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c
DZ1100N22KHPSA2
Hersteller: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+799.39 EUR
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IRFB7440GPBF irfb7440gpbf.pdf?fileId=5546d462533600a401535616b56d1e59
IRFB7440GPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
auf Bestellung 4450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
279+1.63 EUR
Mindestbestellmenge: 279 Stücke
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AUIRFS4610 auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423
AUIRFS4610
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C25632KV18-500BZXC Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra
CY7C25632KV18-500BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29AS016J70BHI043 Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
S29AS016J70BHI043
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL064S70BHI043 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S70BHI043
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL064S90FHI040 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S90FHI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL064S90BHI043 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S90BHI043
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL064S90BHI040 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S90BHI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Grade: Automotive
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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IDD09SG60CXTMA2 Infineon-IDD09SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd6a2f7d1aab
IDD09SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AUIRG4PH50SXKMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tube
Produkt ist nicht verfügbar
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CHL8325A-03CRT IR3541_CHL8325A_B_v1.09_6-21-13.pdf
CHL8325A-03CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Number of Outputs: 5
Clock Sync: No
Output Phases: 5
Serial Interfaces: I2C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FF225R12ME4PBPSA1 Infineon-FF225R12ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e4257d506a6
FF225R12ME4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+176.05 EUR
Mindestbestellmenge: 3 Stücke
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S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.68 EUR
10+13.62 EUR
25+13.2 EUR
50+12.89 EUR
100+12.57 EUR
250+12.19 EUR
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EVALFFXMR20KM1HDRTOBO1 Infineon-EVAL-FFXMR20KM1HDR-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86aa5f8657ad
EVALFFXMR20KM1HDRTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR FF3MR20KM1H
Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Primary Attributes: Isolated
Supplied Contents: Board(s)
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Type: Power Management
Function: MOSFET
Packaging: Box
Produkt ist nicht verfügbar
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FF4MR12W2M1HB11BPSA1 Infineon-FF4MR12W2M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1b75ed4ec7
FF4MR12W2M1HB11BPSA1
Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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FF75R12W1T7EB11BPSA1 FF75R12W1T7EB11BPSA1.pdf
FF75R12W1T7EB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 65A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+62.41 EUR
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CY15V108QN-20LPXI CY15B108QN_CY15V108QN_RevB_5-25-22.pdf
CY15V108QN-20LPXI
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXC Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee73ee37021&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY15V108QI-20LPXC
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD8V0L1B-02LRH E6433 ESD8V0L.pdf
ESD8V0L1B-02LRH E6433
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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IMBG120R116M2HXTMA1 infineon-imbg120r116m2h-datasheet-en.pdf
IMBG120R116M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 21.2A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R116M2HXTMA1 infineon-imbg120r116m2h-datasheet-en.pdf
IMBG120R116M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 21.2A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.54 EUR
10+6.41 EUR
100+4.63 EUR
500+4.62 EUR
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IPB80N06S2L09ATMA2 Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333f475ad4&ack=t
IPB80N06S2L09ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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