Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126529) > Seite 719 nach 2109

Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 714 715 716 717 718 719 720 721 722 723 724 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BGT24ATR22E6433XUMA1 BGT24ATR22E6433XUMA1 Infineon Technologies Infineon-BGT24ATR22-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018eed7c48cc21c0 Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.09 EUR
10+18.33 EUR
25+17.36 EUR
100+16.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE9274QXV33XUMA2 TLE9274QXV33XUMA2 Infineon Technologies Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85 Description: OPTIREG SYST BASIS CHIPS
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Applications: Converter, Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 28V
Number of Outputs: 3
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY241V8ASXC-12 CY241V8ASXC-12 Infineon Technologies CY241V08A-12.pdf Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Clock Generator, Fanout Distribution
Frequency - Max: 74.25MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALCO25VMINIBOARDTOBO1 EVALCO25VMINIBOARDTOBO1 Infineon Technologies infineon-pasco2v15-datasheet-en.pdf Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EVALCO25VSENSOR2GOTOBO1 EVALCO25VSENSOR2GOTOBO1 Infineon Technologies Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
300+25.48 EUR
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.87 EUR
5+30.87 EUR
10+29.75 EUR
25+28.42 EUR
50+27.5 EUR
100+26.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V01AUMA3 PASCO2V01AUMA3 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V11AUMA1 Infineon Technologies Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V01AUMA2 Infineon Technologies Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 3ns
Channel Type: Unidirectional
Isolated Power: Yes
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.18 EUR
10+3.45 EUR
100+2.65 EUR
500+2.4 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEB22320NV2.1 Infineon Technologies Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
16+37.31 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY4603 CY4603 Infineon Technologies Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: EVAL BOARD FOR CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+182.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XTSA1 BGSX24MU16E6327XTSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FAI040 S29GL064N90FAI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FFIS10 S29GL064N90FFIS10 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FFA040 S29GL064N90FFA040 Infineon Technologies S29GL064N_032N_RevB_5-26-17.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD380N22KXPSA1 DD380N22KXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: 150°C
Supplier Device Package: BG-PB50AT-1
Current - Average Rectified (Io) (per Diode): 393A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+370.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD380N22KOFXPSA1 DD380N22KOFXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+370.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD360N22KHPSA1 DD360N22KHPSA1 Infineon Technologies Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5 Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSB2134HV2.2 PSB2134HV2.2 Infineon Technologies psb213x.pdf Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)
33+17.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSB2134HV1.4GD PSB2134HV1.4GD Infineon Technologies Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
31+18.66 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA2 IPB65R225C7ATMA2 Infineon Technologies Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.01 EUR
10+3.92 EUR
100+2.73 EUR
500+2.21 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.7 EUR
10+17.96 EUR
50+14.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1081 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.51 EUR
10+15.68 EUR
100+13.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+11.08 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA1 IPB65R225C7ATMA1 Infineon Technologies DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD120E120D7XKSA1 IDWD120E120D7XKSA1 Infineon Technologies IDWD120E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.85 EUR
10+10.71 EUR
25+10.21 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAW70R950CEXKSA1 IPAW70R950CEXKSA1 Infineon Technologies Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef Description: MOSFET N-CH 700V 7.4A TO220-3-31
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
483+1.17 EUR
Mindestbestellmenge: 483 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY91F527USDPMC-GSE2 Infineon Technologies Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY3201-06 CY3201-06 Infineon Technologies Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+130.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY3201-07 CY3201-07 Infineon Technologies Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+119.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY3207ISSP CY3207ISSP Infineon Technologies Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY3203A-CAPSENSE CY3203A-CAPSENSE Infineon Technologies CY3203A-CapSense%20Kit%20Quick%20Start.pdf Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE94108ELXUMA1 TLE94108ELXUMA1 Infineon Technologies Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16 Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 8914 Stücke:
Lieferzeit 10-14 Tag (e)
179+3.37 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE7233EMXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N26KHPSA1 DZ540N26KHPSA1 Infineon Technologies DZ540N.pdf Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T740N26TOFPRXOSA1 Infineon Technologies Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.68 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 5878 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.82 EUR
10+3.77 EUR
100+2.61 EUR
500+2.11 EUR
1000+2.05 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.91 EUR
10+28.31 EUR
100+25.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY29942AXCT CY29942AXCT Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
19+29.99 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD600N18KXPSA1 DD600N18KXPSA1 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
22+27.58 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY23EP05SXC-1HT CY23EP05SXC-1HT Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29PL032J55BFI070 S29PL032J55BFI070 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-VFBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3380 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLV49462LHALA1 TLV49462LHALA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: MAGNETIC SWITCH LATCH SSO-3-2
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
868+0.7 EUR
Mindestbestellmenge: 868 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SLS32AIA010MSUSON10XTMA2 SLS32AIA010MSUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
RAM Size: External
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N03LSGATMA1 BSC034N03LSGATMA1 Infineon Technologies BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.84 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2263KV18-550BZXC CY7C2263KV18-550BZXC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2163KV18-450BZXI CY7C2163KV18-450BZXI Infineon Technologies Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2245KV18-450BZXI CY7C2245KV18-450BZXI Infineon Technologies Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
5+143.97 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111LPMC-G-MJE1 CY9AF111LPMC-G-MJE1 Infineon Technologies Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111MAPMC-G-MJE1 CY9AF111MAPMC-G-MJE1 Infineon Technologies Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25HS512TDPBHI013 S25HS512TDPBHI013 Infineon Technologies infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGT24ATR22E6433XUMA1 Infineon-BGT24ATR22-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018eed7c48cc21c0
BGT24ATR22E6433XUMA1
Hersteller: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.09 EUR
10+18.33 EUR
25+17.36 EUR
100+16.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE9274QXV33XUMA2 Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85
TLE9274QXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Applications: Converter, Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 28V
Number of Outputs: 3
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY241V8ASXC-12 CY241V08A-12.pdf
CY241V8ASXC-12
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Clock Generator, Fanout Distribution
Frequency - Max: 74.25MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALCO25VMINIBOARDTOBO1 infineon-pasco2v15-datasheet-en.pdf
EVALCO25VMINIBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+47.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EVALCO25VSENSOR2GOTOBO1 Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf
EVALCO25VSENSOR2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V15AUMA1 infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d
PASCO2V15AUMA1
Hersteller: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
300+25.48 EUR
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V15AUMA1 infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d
PASCO2V15AUMA1
Hersteller: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+33.87 EUR
5+30.87 EUR
10+29.75 EUR
25+28.42 EUR
50+27.5 EUR
100+26.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V01AUMA3 Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
PASCO2V01AUMA3
Hersteller: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V11AUMA1
Hersteller: Infineon Technologies
Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PASCO2V01AUMA2
Hersteller: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 3ns
Channel Type: Unidirectional
Isolated Power: Yes
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.18 EUR
10+3.45 EUR
100+2.65 EUR
500+2.4 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEB22320NV2.1
Hersteller: Infineon Technologies
Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+37.31 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY4603 Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY4603
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+182.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XTSA1 Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FAI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FFIS10
S29GL064N90FFIS10
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL064N90FFA040 S29GL064N_032N_RevB_5-26-17.pdf
S29GL064N90FFA040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD380N22KXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KXPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: 150°C
Supplier Device Package: BG-PB50AT-1
Current - Average Rectified (Io) (per Diode): 393A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+370.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD380N22KOFXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KOFXPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+370.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD360N22KHPSA1 Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5
DD360N22KHPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSB2134HV2.2 psb213x.pdf
PSB2134HV2.2
Hersteller: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+17.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSB2134HV1.4GD
PSB2134HV1.4GD
Hersteller: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+18.66 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA2 Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.01 EUR
10+3.92 EUR
100+2.73 EUR
500+2.21 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.7 EUR
10+17.96 EUR
50+14.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1081 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.51 EUR
10+15.68 EUR
100+13.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+11.08 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R225C7ATMA1 DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD120E120D7XKSA1 IDWD120E120D7_Rev1.00_12-15-23.pdf
IDWD120E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.85 EUR
10+10.71 EUR
25+10.21 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAW70R950CEXKSA1 Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef
IPAW70R950CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
483+1.17 EUR
Mindestbestellmenge: 483 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY91F527USDPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY3201-06
CY3201-06
Hersteller: Infineon Technologies
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+130.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY3201-07
CY3201-07
Hersteller: Infineon Technologies
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+119.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY3207ISSP Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3207ISSP
Hersteller: Infineon Technologies
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY3203A-CAPSENSE CY3203A-CapSense%20Kit%20Quick%20Start.pdf
CY3203A-CAPSENSE
Hersteller: Infineon Technologies
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE94108ELXUMA1 Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16
TLE94108ELXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 8914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
179+3.37 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE7233EMXUMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N26KHPSA1 DZ540N.pdf
DZ540N26KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T740N26TOFPRXOSA1
Hersteller: Infineon Technologies
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.68 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 5878 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.82 EUR
10+3.77 EUR
100+2.61 EUR
500+2.11 EUR
1000+2.05 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.91 EUR
10+28.31 EUR
100+25.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY29942AXCT Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+29.99 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046MTICPW2100HALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD600N18KXPSA1 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N18KXPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+27.58 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY23EP05SXC-1HT download
CY23EP05SXC-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29PL032J55BFI070 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J55BFI070
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-VFBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLV49462LHALA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Test Condition: -40°C ~ 85°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
868+0.7 EUR
Mindestbestellmenge: 868 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SLS32AIA010MSUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MSUSON10XTMA2
Hersteller: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Program Memory Type: NVM (10kB)
Controller Series: OPTIGA™ Trust M
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -25°C ~ 85°C (TA)
RAM Size: External
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N03LSGATMA1 BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef
BSC034N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.84 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2263KV18-550BZXC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2163KV18-450BZXI Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm
CY7C2163KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
CY7C2245KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+143.97 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111LPMC-G-MJE1
CY9AF111LPMC-G-MJE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111MAPMC-G-MJE1
CY9AF111MAPMC-G-MJE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25HS512TDPBHI013 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf
S25HS512TDPBHI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 714 715 716 717 718 719 720 721 722 723 724 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]