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CY7C1345G-100AXC CY7C1345G-100AXC Infineon Technologies Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CY7C1345G-100AXCT CY7C1345G-100AXCT Infineon Technologies Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1059DV33-12ZSXQT CY7C1059DV33-12ZSXQT Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 24000 Stücke:
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1000+19.86 EUR
Mindestbestellmenge: 1000
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CY7C1059DV33-12ZSXQT CY7C1059DV33-12ZSXQT Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY7C1059DV33-12ZSXQ CY7C1059DV33-12ZSXQ Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDPBHVC13 Infineon Technologies Description: STD SPI
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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MB39C022GPN-G-ERE1 MB39C022GPN-G-ERE1 Infineon Technologies download Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 3.3V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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CY7C1061G-10ZXI CY7C1061G-10ZXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061G-10ZSXIT CY7C1061G-10ZSXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G-10ZXIT CY7C1061G-10ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS54040LBAAUMA1 BTS54040LBAAUMA1 Infineon Technologies BTS54040-LBA.pdf Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS54040LBAAUMA1 BTS54040LBAAUMA1 Infineon Technologies BTS54040-LBA.pdf Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS5662EAUMA1 BTS5662EAUMA1 Infineon Technologies BTS5662E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
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CY8C24423A-24PXI CY8C24423A-24PXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4402F64K256ABXQSA1 XMC4402F64K256ABXQSA1 Infineon Technologies XMC4400.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C4149AZAS588XQLA1 CY8C4149AZAS588XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IDYH40G200C5XKSA1 IDYH40G200C5XKSA1 Infineon Technologies Description: DIODE SIC 2000V 114A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4550pF @ 1V, 100kHz
Current - Average Rectified (Io): 114A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 2000 V
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IRGB4610DPBF IRGB4610DPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGB4610DPBF IRGB4610DPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGS4610DPBF IRGS4610DPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGS4610DPBF IRGS4610DPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRF6726MTRPBF IRF6726MTRPBF Infineon Technologies irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98 Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
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IRF6726MTRPBF IRF6726MTRPBF Infineon Technologies irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98 Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
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IRF6726MTRPBF IRF6726MTRPBF Infineon Technologies irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98 Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
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199+2.54 EUR
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SCREWCLAMPEASY2XOXA1 SCREWCLAMPEASY2XOXA1 Infineon Technologies Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
auf Bestellung 200 Stücke:
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15+1.22 EUR
25+1.10 EUR
200+0.92 EUR
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TLD11141EPXUMA1 Infineon Technologies Infineon-TLD1114-1EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eb17ed6210484 Description: TLD1LITSingChanneLDriver
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 180mA
Internal Switch(s): Yes
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4598 Stücke:
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IPB79CN10N G IPB79CN10N G Infineon Technologies IPx78-80CN10N%20G.pdf Description: MOSFET N-CH 100V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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IPD49CN10N G IPD49CN10N G Infineon Technologies IPx%2849%2C50%29CN10N_G.pdf Description: MOSFET N-CH 100V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Produkt ist nicht verfügbar
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IPD64CN10N G IPD64CN10N G Infineon Technologies IP%28D%2CU%2964CN10N_G.pdf Description: MOSFET N-CH 100V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V
Produkt ist nicht verfügbar
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IPI26CN10N G IPI26CN10N G Infineon Technologies IPx25%2C26CN10N_G.pdf Description: MOSFET N-CH 100V 35A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Produkt ist nicht verfügbar
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IPI35CN10N G IPI35CN10N G Infineon Technologies IPP35CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Produkt ist nicht verfügbar
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IPI80CN10N G IPI80CN10N G Infineon Technologies IPx78-80CN10N%20G.pdf Description: MOSFET N-CH 100V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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IPU64CN10N G IPU64CN10N G Infineon Technologies IP%28D%2CU%2964CN10N_G.pdf Description: MOSFET N-CH 100V 17A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V
Produkt ist nicht verfügbar
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IPU78CN10N G IPU78CN10N G Infineon Technologies IPx78-80CN10N%20G.pdf Description: MOSFET N-CH 100V 13A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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S25FL128LAGMFA003 S25FL128LAGMFA003 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL128SDSMFA000 S25FL128SDSMFA000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFA003 S25FL128SAGMFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDSMFA003 S25FL128SDSMFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFA001 S25FL128SAGMFA001 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFA003 S25FL256LAGMFA003 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL256LAGMFA001 S25FL256LAGMFA001 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL164K0XMFA000 S25FL164K0XMFA000 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL064LABNFM013 S25FL064LABNFM013 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DD180N20SHPSA1 DD180N20SHPSA1 Infineon Technologies Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
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16+36.99 EUR
Mindestbestellmenge: 16
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S99GL256S90TFI010 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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A2C02865700A Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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S29GL256S10DHIV13 S29GL256S10DHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPC014N03L3X1SA1 Infineon Technologies Infineon-IPC014N03L3-DS-v02_05-EN.pdf?fileId=5546d4624ad04ef9014af355804c13a6 Description: MOSFET N-CH 30V 2A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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CYUSB3312-88LTXCT CYUSB3312-88LTXCT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD800S45KL3B5NPSA1 DD800S45KL3B5NPSA1 Infineon Technologies Infineon-DD800S45KL3_B5-DS-v03_00-EN.pdf?fileId=5546d46254e133b401550b1ba08a37d4 Description: DIODE MOD GP 4500V 800A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 800 A
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1+2228.28 EUR
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CYT2B64CADQ0AZEGS CYT2B64CADQ0AZEGS Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
1+19.71 EUR
10+15.50 EUR
25+14.45 EUR
119+13.18 EUR
357+12.56 EUR
595+12.34 EUR
1071+12.11 EUR
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CYT2B64CADQ0AZEGST CYT2B64CADQ0AZEGST Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-15PC CY7C199C-15PC Infineon Technologies CY7C199C%20RevC.pdf Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199CL-15VXC CY7C199CL-15VXC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-25PC CY7C199C-25PC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199-15VC CY7C199-15VC Infineon Technologies CY7C199.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199-35PC CY7C199-35PC Infineon Technologies CY7C199.pdf Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-12ZXC CY7C199C-12ZXC Infineon Technologies CY7C199C%20RevC.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMBG120R020M1XTMA1 AIMBG120R020M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R020M1XTMA1 AIMBG120R020M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
1+39.46 EUR
10+28.54 EUR
100+23.31 EUR
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CY7C1345G-100AXC Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f
CY7C1345G-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1345G-100AXCT Infineon-CY7C1345G_4-Mbit_(128_K_36)_Flow-Through_Sync_SRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4242a398f
CY7C1345G-100AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1059DV33-12ZSXQT Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+19.86 EUR
Mindestbestellmenge: 1000
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CY7C1059DV33-12ZSXQT Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.27 EUR
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CY7C1059DV33-12ZSXQ Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQ
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDPBHVC13
Hersteller: Infineon Technologies
Description: STD SPI
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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MB39C022GPN-G-ERE1 download
MB39C022GPN-G-ERE1
Hersteller: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Frequency - Switching: 2MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 10-SON (3x3)
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Voltage/Current - Output 2: 3.3V, 300mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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CY7C1061G-10ZXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G-10ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061G-10ZSXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061G-10ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS54040LBAAUMA1 BTS54040-LBA.pdf
BTS54040LBAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS54040LBAAUMA1 BTS54040-LBA.pdf
BTS54040LBAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS5662EAUMA1 BTS5662E.pdf
BTS5662EAUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C24423A-24PXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4402F64K256ABXQSA1 XMC4400.pdf
XMC4402F64K256ABXQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4149AZAS588XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZAS588XQLA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IDYH40G200C5XKSA1
IDYH40G200C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 2000V 114A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4550pF @ 1V, 100kHz
Current - Average Rectified (Io): 114A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 2000 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.20 EUR
30+30.55 EUR
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IRGB4610DPBF IRGx4610DPbF.pdf
IRGB4610DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
241+2.03 EUR
Mindestbestellmenge: 241
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IRGB4610DPBF IRGx4610DPbF.pdf
IRGB4610DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGS4610DPBF IRGx4610DPbF.pdf
IRGS4610DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
350+1.80 EUR
Mindestbestellmenge: 350
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IRGS4610DPBF IRGx4610DPbF.pdf
IRGS4610DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRF6726MTRPBF irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98
IRF6726MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6726MTRPBF irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98
IRF6726MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6726MTRPBF irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98
IRF6726MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
199+2.54 EUR
Mindestbestellmenge: 199
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SCREWCLAMPEASY2XOXA1
SCREWCLAMPEASY2XOXA1
Hersteller: Infineon Technologies
Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
15+1.22 EUR
25+1.10 EUR
200+0.92 EUR
Mindestbestellmenge: 11
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TLD11141EPXUMA1 Infineon-TLD1114-1EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eb17ed6210484
Hersteller: Infineon Technologies
Description: TLD1LITSingChanneLDriver
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 180mA
Internal Switch(s): Yes
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
493+1.03 EUR
Mindestbestellmenge: 493
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IPB79CN10N G IPx78-80CN10N%20G.pdf
IPB79CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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IPD49CN10N G IPx%2849%2C50%29CN10N_G.pdf
IPD49CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 20A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Produkt ist nicht verfügbar
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IPD64CN10N G IP%28D%2CU%2964CN10N_G.pdf
IPD64CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V
Produkt ist nicht verfügbar
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IPI26CN10N G IPx25%2C26CN10N_G.pdf
IPI26CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Produkt ist nicht verfügbar
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IPI35CN10N G IPP35CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b457b44b1
IPI35CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Produkt ist nicht verfügbar
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IPI80CN10N G IPx78-80CN10N%20G.pdf
IPI80CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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IPU64CN10N G IP%28D%2CU%2964CN10N_G.pdf
IPU64CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V
Produkt ist nicht verfügbar
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IPU78CN10N G IPx78-80CN10N%20G.pdf
IPU78CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Produkt ist nicht verfügbar
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S25FL128LAGMFA003 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGMFA003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL128SDSMFA000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFA000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFA003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDSMFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFA003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFA001 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFA001
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFA003 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFA003
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL256LAGMFA001 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFA001
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL164K0XMFA000 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XMFA000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL064LABNFM013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABNFM013
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DD180N20SHPSA1
DD180N20SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+36.99 EUR
Mindestbestellmenge: 16
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S99GL256S90TFI010
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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A2C02865700A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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S29GL256S10DHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10DHIV13
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPC014N03L3X1SA1 Infineon-IPC014N03L3-DS-v02_05-EN.pdf?fileId=5546d4624ad04ef9014af355804c13a6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 2A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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CYUSB3312-88LTXCT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3312-88LTXCT
Hersteller: Infineon Technologies
Description: IC USB 3.0 HUB 2-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD800S45KL3B5NPSA1 Infineon-DD800S45KL3_B5-DS-v03_00-EN.pdf?fileId=5546d46254e133b401550b1ba08a37d4
DD800S45KL3B5NPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 4500V 800A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 800 A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2228.28 EUR
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CYT2B64CADQ0AZEGS Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
CYT2B64CADQ0AZEGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.71 EUR
10+15.50 EUR
25+14.45 EUR
119+13.18 EUR
357+12.56 EUR
595+12.34 EUR
1071+12.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B64CADQ0AZEGST Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
CYT2B64CADQ0AZEGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-15PC CY7C199C%20RevC.pdf
CY7C199C-15PC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199CL-15VXC CY7C199C%20RevB.pdf
CY7C199CL-15VXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-25PC CY7C199C%20RevB.pdf
CY7C199C-25PC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199-15VC CY7C199.pdf
CY7C199-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199-35PC CY7C199.pdf
CY7C199-35PC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199C-12ZXC CY7C199C%20RevC.pdf
CY7C199C-12ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMBG120R020M1XTMA1 448_AIMBG120R.pdf
AIMBG120R020M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R020M1XTMA1 448_AIMBG120R.pdf
AIMBG120R020M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 468W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 15mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.46 EUR
10+28.54 EUR
100+23.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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