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IQE018N06NM6ATMA1 IQE018N06NM6ATMA1 Infineon Technologies infineon-iqe018n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IQE018N06NM6CGSCATMA1 IQE018N06NM6CGSCATMA1 Infineon Technologies infineon-iqe018n06nm6cgsc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IQE018N06NM6SCATMA1 IQE018N06NM6SCATMA1 Infineon Technologies infineon-iqe018n06nm6sc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
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IPC218N06N3X1SA2 Infineon Technologies DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052 Description: MOSFET N-CH 60V 3A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
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ROTATEKNOBANGLE2GOTOBO1 ROTATEKNOBANGLE2GOTOBO1 Infineon Technologies Infineon-SensorSelectionGuide-ProductSelectionGuide-v01_00-EN.pdf?fileId=5546d462636cc8fb0164229c09f51bbe&utm_medium=email&utm_campaign=202108_glob_en_atv_sensor+guide&utm_source=N308&elq_mid=5838&elq_cid=428256 Description: ROTATE KNOB 3D 2 GO KIT
Packaging: Box
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Kit
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IHFW40N65R5SXKSA1 IHFW40N65R5SXKSA1 Infineon Technologies Infineon-IHFW40N65R5S-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d969bc751ef7 Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
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IGO60R042D1AUMA2 IGO60R042D1AUMA2 Infineon Technologies Infineon-IGO60R042D1-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb34701864ecba94838cd Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
Supplier Device Package: PG-DSO-20-85
Drain to Source Voltage (Vdss): 600 V
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TC299T128F300SBCKXUMA1 TC299T128F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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TC299TP128F300NBCKXUMA1 TC299TP128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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TC267D40F200SBCKXUMA1 TC267D40F200SBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC297TX128F300SBCKXUMA1 TC297TX128F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC297TA128F300SBCKXUMA1 TC297TA128F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC297TA64F300SBCKXUMA1 TC297TA64F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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BGSX33MU16E6327XTSA1 Infineon Technologies Description: IC RF SWITCH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX33MU16E6327XTSA1 Infineon Technologies Description: IC RF SWITCH
Packaging: Cut Tape (CT)
auf Bestellung 600 Stücke:
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7+3.08 EUR
10+2.65 EUR
25+2.5 EUR
100+2.3 EUR
250+2.18 EUR
500+2.08 EUR
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TLE4973EVALSTDPCBTOBO1 Infineon Technologies Description: TLE4973 EVAL STD PCB
Packaging: Bulk
Interface: Analog
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 221A
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BGMC1210E6327XUMA1 BGMC1210E6327XUMA1 Infineon Technologies Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
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BFP182RE7764HTSA1 BFP182RE7764HTSA1 Infineon Technologies bfp182r.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114266cb9c9060a Description: RF TRANS NPN 12V 8GHZ SOT143R-4
Packaging: Bulk
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4-1
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 Infineon Technologies IPA037N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431d8a6b3c011dce12d2e1353d Description: MOSFET N-CH 80V 75A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
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IPB339N20NM6ATMA1 IPB339N20NM6ATMA1 Infineon Technologies Infineon-IPB339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b4a120c7a Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
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IPB339N20NM6ATMA1 IPB339N20NM6ATMA1 Infineon Technologies Infineon-IPB339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b4a120c7a Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
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50+3.26 EUR
100+2.95 EUR
500+2.39 EUR
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IPT129N20NM6ATMA1 IPT129N20NM6ATMA1 Infineon Technologies infineon-ipt129n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
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IPT129N20NM6ATMA1 IPT129N20NM6ATMA1 Infineon Technologies infineon-ipt129n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
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50+5.89 EUR
100+5.38 EUR
500+4.89 EUR
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TT500N12KOFHPSA2 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.2KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.2 kV
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TT500N18KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TT570N16KOFXPSA1 Infineon Technologies Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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IM72D128VV01XTMA1 IM72D128VV01XTMA1 Infineon Technologies Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8 Description: MIC SDM DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
Produkt ist nicht verfügbar
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IMLT65R033M2HXTMA1 IMLT65R033M2HXTMA1 Infineon Technologies Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 IPTC025N15NM6ATMA1 Infineon Technologies Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 3600 Stücke:
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IPTC025N15NM6ATMA1 IPTC025N15NM6ATMA1 Infineon Technologies Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
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10+9.81 EUR
50+7.77 EUR
100+7.13 EUR
500+6.78 EUR
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IMWH170R1K0M1XKSA1 IMWH170R1K0M1XKSA1 Infineon Technologies Infineon-IMWH170R1K0M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bb0031500 Description: IMWH170R1K0M1XKSA1
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.2mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.69 EUR
10+6.6 EUR
30+5.99 EUR
90+5.53 EUR
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IMWH170R650M1XKSA1 IMWH170R650M1XKSA1 Infineon Technologies Infineon-IMWH170R650M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6c06fe151a Description: IMWH170R650M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.83 EUR
30+7.89 EUR
60+7.19 EUR
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TLE4973R120T5US0010XUMA1 TLE4973R120T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973R120T5US0010XUMA1 TLE4973R120T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2415 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.6 EUR
5+9.52 EUR
10+9.13 EUR
25+8.65 EUR
50+8.33 EUR
100+8.02 EUR
500+7.43 EUR
1000+7.2 EUR
Mindestbestellmenge: 2 Stücke
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EVAL6ED2742S01QM1TOBO1 Infineon Technologies Description: EVALUATION BOARD FOR 160 V THREE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6ED2742S01Q
Primary Attributes: 24V Operating Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IPP60R016CM8XKSA1 IPP60R016CM8XKSA1 Infineon Technologies Infineon-IPP60R016CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8e21f7f33cd1 Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 1036 Stücke:
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1+24.91 EUR
10+17.4 EUR
50+14.18 EUR
100+13.16 EUR
500+11.6 EUR
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BBY 59-02V E6327 BBY 59-02V E6327 Infineon Technologies BBY_59_Apr2007.pdf Description: DIODE VARACTOR 15V SGL PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 7.8pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 4.6
Produkt ist nicht verfügbar
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CY7C1265KV18-450BZXC CY7C1265KV18-450BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1262XV18-450BZXC CY7C1262XV18-450BZXC Infineon Technologies Infineon-CY7C1262XV18_CY7C1264XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec27b0d376c&utm_source=cypress&utm_medium=referral&utm_ca Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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CY7C1268KV18-450BZXC CY7C1268KV18-450BZXC Infineon Technologies CY7C12%2868%2C70%29KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 803 Stücke:
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5+121.9 EUR
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CY7C12681KV18-450BZXC CY7C12681KV18-450BZXC Infineon Technologies CY7C126x1%2C127x1KV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 145 Stücke:
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CY7C2564XV18-450BZXC CY7C2564XV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 28 Stücke:
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CY7C1570KV18-450BZC CY7C1570KV18-450BZC Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 512 Stücke:
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CY7C1545KV18-450BZC CY7C1545KV18-450BZC Infineon Technologies CY7C1541%2C43%2C56%2C45_RevF.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 1847 Stücke:
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2+427.47 EUR
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IPB022N12NM6ATMA1 IPB022N12NM6ATMA1 Infineon Technologies Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB022N12NM6ATMA1 IPB022N12NM6ATMA1 Infineon Technologies Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.24 EUR
10+10.36 EUR
100+7.59 EUR
500+6.71 EUR
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IPB029N15NM6ATMA1 IPB029N15NM6ATMA1 Infineon Technologies Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Produkt ist nicht verfügbar
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IPB029N15NM6ATMA1 IPB029N15NM6ATMA1 Infineon Technologies Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.57 EUR
10+8.45 EUR
50+6.68 EUR
100+6.1 EUR
500+5.72 EUR
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BGF 200 E6327 BGF 200 E6327 Infineon Technologies BGF200.pdf Description: IC VOLUME CONTROL S-WLP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Mounting Type: Surface Mount
Function: Volume Control
Specifications: 6GHz
Applications: Audio Systems
Supplier Device Package: S-WLP-8
Number of Channels: 2
Produkt ist nicht verfügbar
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S6E1A11C0AGF20000 S6E1A11C0AGF20000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 56KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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BA 779 E6327 BA 779 E6327 Infineon Technologies BA779.pdf Description: RF DIODE PIN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Current - Max: 50 mA
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PVI5033RPBFHKLA1 Infineon Technologies Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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PVI5033RSTPBFHUMA1 Infineon Technologies pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943 Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 8V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
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BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1 Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
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CY7C199C-20VC CY7C199C-20VC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFI000 S25FL256LAGMFI000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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3+8.25 EUR
10+7.32 EUR
25+6.99 EUR
40+6.82 EUR
80+6.58 EUR
240+6.21 EUR
480+5.99 EUR
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
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TLE4943CXAMA1 Infineon Technologies Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6 Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
Produkt ist nicht verfügbar
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IPB70P04P409ATMA1 IPB70P04P409ATMA1 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQE018N06NM6ATMA1 infineon-iqe018n06nm6-datasheet-en.pdf
IQE018N06NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE018N06NM6CGSCATMA1 infineon-iqe018n06nm6cgsc-datasheet-en.pdf
IQE018N06NM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE018N06NM6SCATMA1 infineon-iqe018n06nm6sc-datasheet-en.pdf
IQE018N06NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
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IPC218N06N3X1SA2 DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 3A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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ROTATEKNOBANGLE2GOTOBO1 Infineon-SensorSelectionGuide-ProductSelectionGuide-v01_00-EN.pdf?fileId=5546d462636cc8fb0164229c09f51bbe&utm_medium=email&utm_campaign=202108_glob_en_atv_sensor+guide&utm_source=N308&elq_mid=5838&elq_cid=428256
ROTATEKNOBANGLE2GOTOBO1
Hersteller: Infineon Technologies
Description: ROTATE KNOB 3D 2 GO KIT
Packaging: Box
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Kit
auf Bestellung 3 Stücke:
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1+53.74 EUR
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IHFW40N65R5SXKSA1 Infineon-IHFW40N65R5S-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d969bc751ef7
IHFW40N65R5SXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
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IGO60R042D1AUMA2 Infineon-IGO60R042D1-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb34701864ecba94838cd
IGO60R042D1AUMA2
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
Supplier Device Package: PG-DSO-20-85
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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TC299T128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299T128F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC299TP128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299TP128F300NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC267D40F200SBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC297TX128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TX128F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC297TA128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TA128F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC297TA64F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TA64F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSX33MU16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX33MU16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Cut Tape (CT)
auf Bestellung 600 Stücke:
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7+3.08 EUR
10+2.65 EUR
25+2.5 EUR
100+2.3 EUR
250+2.18 EUR
500+2.08 EUR
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TLE4973EVALSTDPCBTOBO1
Hersteller: Infineon Technologies
Description: TLE4973 EVAL STD PCB
Packaging: Bulk
Interface: Analog
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 221A
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BGMC1210E6327XUMA1 Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295
BGMC1210E6327XUMA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
Produkt ist nicht verfügbar
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BFP182RE7764HTSA1 bfp182r.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114266cb9c9060a
BFP182RE7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143R-4
Packaging: Bulk
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT143-4-1
auf Bestellung 259459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2453+0.24 EUR
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IPA037N08N3GXKSA1 IPA037N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431d8a6b3c011dce12d2e1353d
IPA037N08N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 75A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
auf Bestellung 97278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
105+5.24 EUR
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IPB339N20NM6ATMA1 Infineon-IPB339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b4a120c7a
IPB339N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.23 EUR
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IPB339N20NM6ATMA1 Infineon-IPB339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b4a120c7a
IPB339N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.5 EUR
10+4.24 EUR
50+3.26 EUR
100+2.95 EUR
500+2.39 EUR
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IPT129N20NM6ATMA1 infineon-ipt129n20nm6-datasheet-en.pdf
IPT129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Produkt ist nicht verfügbar
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IPT129N20NM6ATMA1 infineon-ipt129n20nm6-datasheet-en.pdf
IPT129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
auf Bestellung 1428 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.21 EUR
10+7.5 EUR
50+5.89 EUR
100+5.38 EUR
500+4.89 EUR
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TT500N12KOFHPSA2 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.2 kV
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+535.95 EUR
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TT500N18KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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TT570N16KOFXPSA1 Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IM72D128VV01XTMA1 Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8
IM72D128VV01XTMA1
Hersteller: Infineon Technologies
Description: MIC SDM DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
Produkt ist nicht verfügbar
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IMLT65R033M2HXTMA1 Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48
IMLT65R033M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R026M2HXTMA1 Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b
IMLT65R026M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IPTC025N15NM6ATMA1 Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021
IPTC025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+5.55 EUR
Mindestbestellmenge: 1800 Stücke
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IPTC025N15NM6ATMA1 Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021
IPTC025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
auf Bestellung 5005 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.52 EUR
10+9.81 EUR
50+7.77 EUR
100+7.13 EUR
500+6.78 EUR
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IMWH170R1K0M1XKSA1 Infineon-IMWH170R1K0M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bb0031500
IMWH170R1K0M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R1K0M1XKSA1
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Rds On (Max) @ Id, Vgs: 880mOhm @ 1A, 15V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.2mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 1000 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.69 EUR
10+6.6 EUR
30+5.99 EUR
90+5.53 EUR
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IMWH170R650M1XKSA1 Infineon-IMWH170R650M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6c06fe151a
IMWH170R650M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R650M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 337 pF @ 1000 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.83 EUR
30+7.89 EUR
60+7.19 EUR
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TLE4973R120T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973R120T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.6 EUR
5+9.52 EUR
10+9.13 EUR
25+8.65 EUR
50+8.33 EUR
100+8.02 EUR
500+7.43 EUR
1000+7.2 EUR
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EVAL6ED2742S01QM1TOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR 160 V THREE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6ED2742S01Q
Primary Attributes: 24V Operating Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IPP60R016CM8XKSA1 Infineon-IPP60R016CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8e21f7f33cd1
IPP60R016CM8XKSA1
Hersteller: Infineon Technologies
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.91 EUR
10+17.4 EUR
50+14.18 EUR
100+13.16 EUR
500+11.6 EUR
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BBY 59-02V E6327 BBY_59_Apr2007.pdf
BBY 59-02V E6327
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 15V SGL PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 7.8pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 4.6
Produkt ist nicht verfügbar
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CY7C1265KV18-450BZXC download
CY7C1265KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1262XV18-450BZXC Infineon-CY7C1262XV18_CY7C1264XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec27b0d376c&utm_source=cypress&utm_medium=referral&utm_ca
CY7C1262XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1268KV18-450BZXC CY7C12%2868%2C70%29KV18.pdf
CY7C1268KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 803 Stücke:
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CY7C12681KV18-450BZXC CY7C126x1%2C127x1KV18.pdf
CY7C12681KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 145 Stücke:
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CY7C2564XV18-450BZXC download
CY7C2564XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-450BZC CY7C1568%2C70KV18.pdf
CY7C1570KV18-450BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 512 Stücke:
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CY7C1545KV18-450BZC CY7C1541%2C43%2C56%2C45_RevF.pdf
CY7C1545KV18-450BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
auf Bestellung 1847 Stücke:
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2+427.47 EUR
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IPB022N12NM6ATMA1 Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e
IPB022N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
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IPB022N12NM6ATMA1 Infineon-IPB022N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec50f0a6487e
IPB022N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 945 Stücke:
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2+15.24 EUR
10+10.36 EUR
100+7.59 EUR
500+6.71 EUR
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IPB029N15NM6ATMA1 Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053
IPB029N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Produkt ist nicht verfügbar
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IPB029N15NM6ATMA1 Infineon-IPB029N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077532ed67053
IPB029N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 276µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
auf Bestellung 897 Stücke:
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2+12.57 EUR
10+8.45 EUR
50+6.68 EUR
100+6.1 EUR
500+5.72 EUR
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BGF 200 E6327 BGF200.pdf
BGF 200 E6327
Hersteller: Infineon Technologies
Description: IC VOLUME CONTROL S-WLP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Mounting Type: Surface Mount
Function: Volume Control
Specifications: 6GHz
Applications: Audio Systems
Supplier Device Package: S-WLP-8
Number of Channels: 2
Produkt ist nicht verfügbar
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S6E1A11C0AGF20000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A11C0AGF20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BA 779 E6327 BA779.pdf
BA 779 E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Current - Max: 50 mA
Produkt ist nicht verfügbar
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PVI5033RPBFHKLA1
Hersteller: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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PVI5033RSTPBFHUMA1 pvi5033r.pdf?fileId=5546d462533600a401535683df4a2943
Hersteller: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 8V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
Produkt ist nicht verfügbar
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BSC097N06NSTATMA1 Infineon-BSC097N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e889d2cc1
BSC097N06NSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/48A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 16939 Stücke:
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AnzahlPrivatkunde
614+0.98 EUR
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CY7C199C-20VC CY7C199C%20RevB.pdf
CY7C199C-20VC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFI000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFI000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.25 EUR
10+7.32 EUR
25+6.99 EUR
40+6.82 EUR
80+6.58 EUR
240+6.21 EUR
480+5.99 EUR
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XMC4104Q48F128ABXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4104Q48F128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4943CXAMA1 Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6
Hersteller: Infineon Technologies
Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPB70P04P409ATMA1 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
IPB70P04P409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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