Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126531) > Seite 711 nach 2109

Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 706 707 708 709 710 711 712 713 714 715 716 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CY8C4025AZI-S413 CY8C4025AZI-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.12 EUR
10+4.58 EUR
25+4.2 EUR
100+3.78 EUR
250+3.58 EUR
500+3.46 EUR
1000+3.37 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP034N08N5XKSA1 IPP034N08N5XKSA1 Infineon Technologies Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.1 EUR
50+3.59 EUR
100+3.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF12505AUMA1 TLF12505AUMA1 Infineon Technologies Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111KPMC-GE1 CY9AF111KPMC-GE1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR35210MTRPBF IR35210MTRPBF Infineon Technologies Description: IC CONTROLLER 40QFN
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
73+7.49 EUR
Mindestbestellmenge: 73 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
D2601NH90TXPSA1 D2601NH90TXPSA1 Infineon Technologies Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58 Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C66113C-LTXC CY7C66113C-LTXC Infineon Technologies CY7C66013%2C%2066113C.pdf Description: IC MCU 8K USB HUB 4PORT 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 56-QFN (8x8)
Core Processor: M8
Applications: USB Hub/Microcontroller
Program Memory Type: OTP (8kB)
Controller Series: USB Hub
Voltage - Supply: 4V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
RAM Size: 256 x 8
Interface: I2C, USB, HAPI
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
44+13.84 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T731N44TOHXPSA1 T731N44TOHXPSA1 Infineon Technologies Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e Description: SCR MODULE 4.4KV 2010A TO-200AC
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1280 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T1401N42TOHXPSA1 T1401N42TOHXPSA1 Infineon Technologies Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8 Description: SCR MODULE 4.4KV 2500A TO-200AF
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2290 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T680N14TOFXPSA1 Infineon Technologies Description: SCR MODULE 1.4KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALPMG1S1DRPTOBO1 EVALPMG1S1DRPTOBO1 Infineon Technologies Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: EVALPMG1S1DRPTOBO1
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: EZ-PD PMG1-S1
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Box
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+273.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.42 EUR
10+6.28 EUR
100+4.49 EUR
500+4.32 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4953CBAMA1 TLE4953CBAMA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
115+4.69 EUR
Mindestbestellmenge: 115 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL3714ZSPBF IRL3714ZSPBF Infineon Technologies IRL3714Z%28S%2CL%29PbF.pdf description Description: MOSFET N-CH 20V 36A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM241S6T2B2AKMA1 Infineon Technologies Description: CIPOS MICRO
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 240 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
2+11 EUR
10+10.25 EUR
25+9.94 EUR
50+9.7 EUR
100+9.47 EUR
250+9.16 EUR
500+8.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148DV30LL-70ZSXA CY62148DV30LL-70ZSXA Infineon Technologies CY62148DV30.pdf Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45SXIT CY62148GN30-45SXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45ZSXIT CY62148GN30-45ZSXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45SXI CY62148GN30-45SXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF100R07W1H5FPB54BPSA2 DF100R07W1H5FPB54BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
10+55.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KT3GBOSA1 FP40R12KT3GBOSA1 Infineon Technologies Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446 Description: IGBT MOD 1200V 55A 210W MOD
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
3+170.91 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4750D-EPBF IRGP4750D-EPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4750DPBF IRGP4750DPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.85 EUR
10+7.94 EUR
100+5.72 EUR
500+4.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.89 EUR
10+7.27 EUR
50+5.71 EUR
100+5.21 EUR
500+4.74 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ELL-45SXI CY62148ELL-45SXI Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD560N45KHPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD210N16KOFHPSA1 TD210N16KOFHPSA1 Infineon Technologies Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
2+302.24 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD710N16KS20HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T2810N16TOFVTXPSA1 T2810N16TOFVTXPSA1 Infineon Technologies Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042 Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TD120N16SOFHPSA1 TD120N16SOFHPSA1 Infineon Technologies Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47 Description: SCR MODULE 1.6KV 190A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.76 EUR
12+44.57 EUR
108+37.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD220N16SHPSA1 DD220N16SHPSA1 Infineon Technologies Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54 Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG025N08NM5ATMA1 IPTG025N08NM5ATMA1 Infineon Technologies Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
10+5.78 EUR
100+4.11 EUR
500+3.87 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.1 EUR
10+10.97 EUR
100+8.07 EUR
500+7.21 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies infineon-isc130n20nm6-datasheet-en.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.88 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies infineon-isc130n20nm6-datasheet-en.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 7901 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.91 EUR
10+7.28 EUR
50+5.72 EUR
100+5.22 EUR
500+4.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY90F546GPFR-GE1 CY90F546GPFR-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KITXMC1300DCV1TOBO1 KITXMC1300DCV1TOBO1 Infineon Technologies Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+147.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS450R17OE4BOSA1 FS450R17OE4BOSA1 Infineon Technologies Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+972.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF1500R12IE5PBPSA1 FF1500R12IE5PBPSA1 Infineon Technologies Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
1+2146.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF1500R12IE5PBPSA1 FF1500R12IE5PBPSA1 Infineon Technologies Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1794.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF150R17ME3GBOSA1 FF150R17ME3GBOSA1 Infineon Technologies Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C161SLM3VAABXUMA1 C161SLM3VAABXUMA1 Infineon Technologies 2156_c161s_ds_v1.0_200311.pdf_folderid%3Ddb3a304412b407950112b43a56c8703a%26fileid%3Ddb3a304412b407950112b43a5758703b.pdf Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
auf Bestellung 2247 Stücke:
Lieferzeit 10-14 Tag (e)
59+9.21 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF3007PBF IRF3007PBF Infineon Technologies irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908 description Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 109927 Stücke:
Lieferzeit 10-14 Tag (e)
231+2.38 EUR
Mindestbestellmenge: 231 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SD106AI17ULHPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDA22590XUMA1 TDA22590XUMA1 Infineon Technologies infineon-tda22590-datasheet-en.pdf Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA22594AXUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY14B256PA-SFXI CY14B256PA-SFXI Infineon Technologies Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Description: IC NVSRAM 256KBIT SPI 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 16-SOIC
Memory Format: NVSRAM
Clock Frequency: 40 MHz
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Technology: NVSRAM (Non-Volatile SRAM)
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.6 EUR
10+19.16 EUR
46+17.7 EUR
92+17.08 EUR
138+16.72 EUR
276+16.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AUXHBFB3306 Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C63231A-SC CY7C63231A-SC Infineon Technologies CY7C63221A%2C63231A.pdf Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 64370 Stücke:
Lieferzeit 10-14 Tag (e)
644+0.84 EUR
Mindestbestellmenge: 644 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 11569 Stücke:
Lieferzeit 10-14 Tag (e)
246+2.24 EUR
Mindestbestellmenge: 246 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 Infineon Technologies infineon-ipu95r2k0p7-datasheet-en.pdf Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 23457 Stücke:
Lieferzeit 10-14 Tag (e)
405+1.33 EUR
Mindestbestellmenge: 405 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4025AZI-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4025AZI-S413
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.58 EUR
25+4.2 EUR
100+3.78 EUR
250+3.58 EUR
500+3.46 EUR
1000+3.37 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP034N08N5XKSA1 Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40
IPP034N08N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.1 EUR
50+3.59 EUR
100+3.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF12505AUMA1
TLF12505AUMA1
Hersteller: Infineon Technologies
Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF111KPMC-GE1
CY9AF111KPMC-GE1
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR35210MTRPBF
IR35210MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER 40QFN
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
73+7.49 EUR
Mindestbestellmenge: 73 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
D2601NH90TXPSA1 Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58
D2601NH90TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C66113C-LTXC CY7C66013%2C%2066113C.pdf
CY7C66113C-LTXC
Hersteller: Infineon Technologies
Description: IC MCU 8K USB HUB 4PORT 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 56-QFN (8x8)
Core Processor: M8
Applications: USB Hub/Microcontroller
Program Memory Type: OTP (8kB)
Controller Series: USB Hub
Voltage - Supply: 4V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
RAM Size: 256 x 8
Interface: I2C, USB, HAPI
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+13.84 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T731N44TOHXPSA1 Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e
T731N44TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 4.4KV 2010A TO-200AC
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1280 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T1401N42TOHXPSA1 Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8
T1401N42TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 4.4KV 2500A TO-200AF
Voltage - Off State: 4.4 kV
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2290 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T680N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALPMG1S1DRPTOBO1 Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
EVALPMG1S1DRPTOBO1
Hersteller: Infineon Technologies
Description: EVALPMG1S1DRPTOBO1
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: EZ-PD PMG1-S1
Type: Power Management
Function: USB PD Controller (Power Delivery)
Packaging: Box
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+273.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.42 EUR
10+6.28 EUR
100+4.49 EUR
500+4.32 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4953CBAMA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CBAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
115+4.69 EUR
Mindestbestellmenge: 115 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL3714ZSPBF description IRL3714Z%28S%2CL%29PbF.pdf
IRL3714ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM241S6T2B2AKMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11 EUR
10+10.25 EUR
25+9.94 EUR
50+9.7 EUR
100+9.47 EUR
250+9.16 EUR
500+8.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148DV30LL-70ZSXA CY62148DV30.pdf
CY62148DV30LL-70ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45SXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45ZSXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN30-45SXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF100R07W1H5FPB54BPSA2 Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab
DF100R07W1H5FPB54BPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+55.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KT3GBOSA1 Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446
FP40R12KT3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W MOD
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+170.91 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4750D-EPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 650V 70A TO-247AD
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4750DPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750DPBF
Hersteller: Infineon Technologies
Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Power - Max: 273 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 105 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 50ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Reverse Recovery Time (trr): 150 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.85 EUR
10+7.94 EUR
100+5.72 EUR
500+4.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPF129N20NM6ATMA1
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.89 EUR
10+7.27 EUR
50+5.71 EUR
100+5.21 EUR
500+4.74 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY62148ELL-45SXI Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 32-SOIC
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD560N45KHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD210N16KOFHPSA1 Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd
TD210N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 410 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 261 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+302.24 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DD710N16KS20HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
T2810N16TOFVTXPSA1 Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042
T2810N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TD120N16SOFHPSA1 Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47
TD120N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 190A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+61.76 EUR
12+44.57 EUR
108+37.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD220N16SHPSA1 Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54
DD220N16SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG025N08NM5ATMA1 Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d
IPTG025N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.73 EUR
10+5.78 EUR
100+4.11 EUR
500+3.87 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.1 EUR
10+10.97 EUR
100+8.07 EUR
500+7.21 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC130N20NM6ATMA1 infineon-isc130n20nm6-datasheet-en.pdf
ISC130N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+3.88 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC130N20NM6ATMA1 infineon-isc130n20nm6-datasheet-en.pdf
ISC130N20NM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 7901 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.91 EUR
10+7.28 EUR
50+5.72 EUR
100+5.22 EUR
500+4.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY90F546GPFR-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F546GPFR-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Supplier Device Package: 100-QFP (14x20)
Peripherals: POR, WDT
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KITXMC1300DCV1TOBO1 Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b
KITXMC1300DCV1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+147.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS450R17OE4BOSA1 Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b
FS450R17OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+972.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF1500R12IE5PBPSA1 Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b
FF1500R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2146.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF1500R12IE5PBPSA1 Infineon-FF1500R12IE5P-DS-v03_00-EN.pdf?fileId=5546d462625a528f0162a96243f0694b
FF1500R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1794.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF150R17ME3GBOSA1 Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c
FF150R17ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C161SLM3VAABXUMA1 2156_c161s_ds_v1.0_200311.pdf_folderid%3Ddb3a304412b407950112b43a56c8703a%26fileid%3Ddb3a304412b407950112b43a5758703b.pdf
C161SLM3VAABXUMA1
Hersteller: Infineon Technologies
Description: SAB-C161S - LEGACY 16-BIT MICROC
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
auf Bestellung 2247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+9.21 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF3007PBF description irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908
IRF3007PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
auf Bestellung 109927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
231+2.38 EUR
Mindestbestellmenge: 231 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SD106AI17ULHPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDA22590XUMA1 infineon-tda22590-datasheet-en.pdf
TDA22590XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA22594AXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
CY14B256PA-SFXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 16-SOIC
Memory Format: NVSRAM
Clock Frequency: 40 MHz
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Technology: NVSRAM (Non-Volatile SRAM)
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.6 EUR
10+19.16 EUR
46+17.7 EUR
92+17.08 EUR
138+16.72 EUR
276+16.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AUXHBFB3306
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C63231A-SC CY7C63221A%2C63231A.pdf
CY7C63231A-SC
Hersteller: Infineon Technologies
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 64370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
644+0.84 EUR
Mindestbestellmenge: 644 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 11569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
246+2.24 EUR
Mindestbestellmenge: 246 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPU95R2K0P7AKMA1 infineon-ipu95r2k0p7-datasheet-en.pdf
IPU95R2K0P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 23457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
405+1.33 EUR
Mindestbestellmenge: 405 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 706 707 708 709 710 711 712 713 714 715 716 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]