Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149887) > Seite 708 nach 2499
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IPB50R299CPATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
auf Bestellung 65886 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2112PBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
auf Bestellung 10400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2112PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FF1200XTR17T2P5PBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1200000 W Current - Collector Cutoff (Max): 10 mA Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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CY90F387SPMCR-GSE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYPD7271-68LQXQT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART, USB RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4V ~ 24V Program Memory Type: FLASH (128kB), ROM (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-68 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYPD7271-68LQXQT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART, USB RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4V ~ 24V Program Memory Type: FLASH (128kB), ROM (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-68 Number of I/O: 19 DigiKey Programmable: Not Verified |
auf Bestellung 3687 Stücke: Lieferzeit 10-14 Tag (e) |
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F4100R12KS4BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 660 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R105CFD7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 470µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V |
auf Bestellung 828 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R145CFD7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
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BUZ30AH3045AATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4146LQI-S422 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 27 DigiKey Programmable: Not Verified |
auf Bestellung 4415 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4126LTI-M445 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AIMZH120R010M1TXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 30mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4287GXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 165°C Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: P-DSO-14-8 Voltage - Output (Min/Fixed): 5V Control Features: Enable, Hold, Reset Grade: Automotive PSRR: 55dB (100Hz) Voltage Dropout (Max): 2.5V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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FF1000R17IE4DB2BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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FS150R12KT3BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 700 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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TZ500N12KOFHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
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TLE4254GAXUMA4 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
auf Bestellung 2164 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4253GSXUMA4 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
auf Bestellung 1079 Stücke: Lieferzeit 10-14 Tag (e) |
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CYAT81688-128AS88Z | Infineon Technologies |
![]() Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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ISK036N03LM5AULA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 11W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
Produkt ist nicht verfügbar |
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AUIRFSL6535 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: PG-TO262-3-901 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFSL6535 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: PG-TO262-3-901 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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S99-50537 | Infineon Technologies |
Description: IC FLASH Packaging: Bulk Memory Format: FLASH |
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IMBG120R026M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V |
Produkt ist nicht verfügbar |
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IMBG120R026M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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CY15V116QSN-108BKXIT | Infineon Technologies |
Description: FRAM Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 108 MHz Memory Format: FRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: SPI - Quad I/O, QPI Access Time: 6.7 ns Memory Organization: 2M x 8 |
Produkt ist nicht verfügbar |
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IM323M6GXKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 26-PowerDIP Module (1.043", 26.50mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
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CY7C1386D-167AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C63723-PC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Mounting Type: Through Hole Interface: PS/2, USB RAM Size: 256 x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4V ~ 5.5V Controller Series: CY7C637xx Program Memory Type: OTP (8kB) Applications: USB Microcontroller Core Processor: M8B Supplier Device Package: 18-PDIP Number of I/O: 10 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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W40S11-02H | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 133MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: Memory, SDRAM DIMM Ratio - Input:Output: 1:10 Differential - Input:Output: No/No Supplier Device Package: 28-SSOP PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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CY8C21434-24LFXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tube Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1380D-167AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C64713-128AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.15V ~ 3.45V Controller Series: CY7C647xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 128-TQFP (14x20) Number of I/O: 40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FP35R12W2T4PBPSA1 | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL032N90DFI023 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL032N90DFI023 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DD380N16KHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 380A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1600 A Current - Reverse Leakage @ Vr: 25 mA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTS121ANKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS117TCAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-3-2 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G-10VXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1024 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041G-10VXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G-10VXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041GE30-10ZSXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041GE30-10ZSXIT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041GN30-10VXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G18-15ZSXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G30-10BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G30-10BVJXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G18-15BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041GE30-10BVXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041GN-10VXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041GE-10ZSXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
BSC0580NSATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IR2166PBFXKXA1 | Infineon Technologies |
Description: IC PFC/BALLAST CNTRL 50KHZ 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: 39kHz ~ 84kHz Type: Ballast Controller Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8.5V ~ 17V Supplier Device Package: 16-DIP Dimming: No Current - Supply: 2.3 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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F3L300R12ME4B22BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V |
auf Bestellung 846 Stücke: Lieferzeit 10-14 Tag (e) |
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F3L300R12ME4B23BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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TD500N16KOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 500 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9AFA44LAPMC1-G-JNE2 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IPB50R299CPATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 65886 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
307+ | 1.61 EUR |
IRS2112PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 3.81 EUR |
IRS2112PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF1200XTR17T2P5PBPSA1 |
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Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.2kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 56000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1486.74 EUR |
CY90F387SPMCR-GSE1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CYPD7271-68LQXQT |
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Hersteller: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CYPD7271-68LQXQT |
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Hersteller: Infineon Technologies
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-68
Number of I/O: 19
DigiKey Programmable: Not Verified
auf Bestellung 3687 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.29 EUR |
10+ | 6.34 EUR |
25+ | 5.85 EUR |
100+ | 5.31 EUR |
250+ | 5.05 EUR |
500+ | 4.90 EUR |
1000+ | 4.77 EUR |
F4100R12KS4BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1200V 130A 660W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 189.88 EUR |
IPB60R105CFD7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.50 EUR |
10+ | 5.64 EUR |
100+ | 4.02 EUR |
500+ | 3.33 EUR |
IPB60R145CFD7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Description: MOSFET N-CH 600V 16A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.70 EUR |
10+ | 3.94 EUR |
100+ | 2.88 EUR |
500+ | 2.41 EUR |
BUZ30AH3045AATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
331+ | 1.41 EUR |
CY8C4146LQI-S422 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 4415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.29 EUR |
10+ | 3.22 EUR |
25+ | 2.96 EUR |
80+ | 2.70 EUR |
230+ | 2.61 EUR |
CY8C4126LTI-M445 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIMZH120R010M1TXKSA1 |
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Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 69.96 EUR |
30+ | 48.73 EUR |
TLE4287GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 250MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 165°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Hold, Reset
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 2.5V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 250MA DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 165°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: P-DSO-14-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Hold, Reset
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 2.5V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF1000R17IE4DB2BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Description: IGBT MODULE 1700V 6250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1050.81 EUR |
FS150R12KT3BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 202.15 EUR |
TZ500N12KOFHPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4254GAXUMA4 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 2164 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.18 EUR |
12+ | 1.59 EUR |
25+ | 1.44 EUR |
100+ | 1.28 EUR |
250+ | 1.20 EUR |
500+ | 1.15 EUR |
1000+ | 1.11 EUR |
TLE4253GSXUMA4 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.41 EUR |
10+ | 1.77 EUR |
25+ | 1.60 EUR |
100+ | 1.42 EUR |
250+ | 1.34 EUR |
500+ | 1.28 EUR |
1000+ | 1.24 EUR |
CYAT81688-128AS88Z |
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Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 47.54 EUR |
10+ | 43.83 EUR |
72+ | 41.86 EUR |
144+ | 37.43 EUR |
288+ | 35.71 EUR |
ISK036N03LM5AULA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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AUIRFSL6535 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 2.63 EUR |
AUIRFSL6535 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
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IMBG120R026M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
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IMBG120R026M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 20.68 EUR |
10+ | 14.48 EUR |
100+ | 12.74 EUR |
CY15V116QSN-108BKXIT |
Hersteller: Infineon Technologies
Description: FRAM
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6.7 ns
Memory Organization: 2M x 8
Description: FRAM
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6.7 ns
Memory Organization: 2M x 8
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IM323M6GXKMA1 |
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Hersteller: Infineon Technologies
Description: CIPOS TINY
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: CIPOS TINY
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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CY7C1386D-167AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C63723-PC |
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Hersteller: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 8K LS USB/PS-2 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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W40S11-02H |
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Hersteller: Infineon Technologies
Description: IC CLK BUFF 10OUT SDRAM 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 133MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 28-SSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK BUFF 10OUT SDRAM 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 133MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: Memory, SDRAM DIMM
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 28-SSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY8C21434-24LFXI |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY7C1380D-167AXC |
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C64713-128AXC | ![]() |
Hersteller: Infineon Technologies
Description: IC MCU USB EZ FX1 16KB 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Controller Series: CY7C647xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU USB EZ FX1 16KB 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Controller Series: CY7C647xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FP35R12W2T4PBPSA1 |
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auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 99.83 EUR |
S29GL032N90DFI023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL032N90DFI023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD380N16KHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 380A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 380A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1600 A
Current - Reverse Leakage @ Vr: 25 mA @ 1600 V
Description: DIODE MODULE GP 1.6KV 380A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 380A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1600 A
Current - Reverse Leakage @ Vr: 25 mA @ 1600 V
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BTS121ANKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 100V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
68+ | 6.99 EUR |
BTS117TCAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Cut Tape (CT)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Description: IC PWR SWITCH
Packaging: Cut Tape (CT)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G-10VXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1024 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.95 EUR |
17+ | 11.18 EUR |
34+ | 10.79 EUR |
51+ | 10.56 EUR |
102+ | 10.19 EUR |
255+ | 9.71 EUR |
510+ | 9.37 EUR |
1003+ | 9.04 EUR |
CY7C1041G-10VXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G-10VXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.55 EUR |
10+ | 11.14 EUR |
25+ | 10.62 EUR |
50+ | 10.24 EUR |
100+ | 9.88 EUR |
CY7C1041GE30-10ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 8.75 EUR |
CY7C1041GE30-10ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.20 EUR |
10+ | 11.23 EUR |
25+ | 10.99 EUR |
50+ | 10.96 EUR |
100+ | 9.83 EUR |
250+ | 9.53 EUR |
500+ | 9.07 EUR |
CY7C1041GN30-10VXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G18-15ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10BVJXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G18-15BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041GE30-10BVXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041GN-10VXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041GE-10ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2166PBFXKXA1 |
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 50KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 39kHz ~ 84kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.5V ~ 17V
Supplier Device Package: 16-DIP
Dimming: No
Current - Supply: 2.3 mA
Description: IC PFC/BALLAST CNTRL 50KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 39kHz ~ 84kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.5V ~ 17V
Supplier Device Package: 16-DIP
Dimming: No
Current - Supply: 2.3 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
F3L300R12ME4B22BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 580.68 EUR |
F3L300R12ME4B23BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 580.68 EUR |
TD500N16KOFXPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9AFA44LAPMC1-G-JNE2 |
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
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