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S29GL256S11DHVV23 S29GL256S11DHVV23 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S6BP501A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
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S6BP501A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
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S6BP502A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
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S6BP502A00SN2B200 Infineon Technologies Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330 Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
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TLE5309DE5201XUMA1 TLE5309DE5201XUMA1 Infineon Technologies TLE5309D.pdf Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
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CY14B256K-SP25XC CY14B256K-SP25XC Infineon Technologies cy14b256k_8.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY14B101K-SP25XC CY14B101K-SP25XC Infineon Technologies CY14B101K.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IPP60R180CM8XKSA1 IPP60R180CM8XKSA1 Infineon Technologies Infineon-IPP60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c26db7824a2 Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IMTA65R060M2HXTMA1 IMTA65R060M2HXTMA1 Infineon Technologies Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R060M2HXTMA1 IMTA65R060M2HXTMA1 Infineon Technologies Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R050M2HXTMA1 IMTA65R050M2HXTMA1 Infineon Technologies Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R050M2HXTMA1 IMTA65R050M2HXTMA1 Infineon Technologies Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R040M2HXTMA1 IMTA65R040M2HXTMA1 Infineon Technologies Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R040M2HXTMA1 IMTA65R040M2HXTMA1 Infineon Technologies Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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IMTA65R020M2HXTMA1 IMTA65R020M2HXTMA1 Infineon Technologies Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMTA65R020M2HXTMA1 IMTA65R020M2HXTMA1 Infineon Technologies Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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FZ1200R45HL4BPSA1 Infineon Technologies Description: IGBT MODULE 4500V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 1.2kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.2 kA
Voltage - Collector Emitter Breakdown (Max): 4.3 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 223000 pF @ 25 V
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BC817K25E6433HTMA1 BC817K25E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K25E6433HTMA1 BC817K25E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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S25FL512SAGBHEA10 S25FL512SAGBHEA10 Infineon Technologies Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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FS3L30R07W2H3FB11BPSA2 FS3L30R07W2H3FB11BPSA2 Infineon Technologies Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9 Description: IGBT MOD 650V 30A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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S6BP401AL3SN1B000 Infineon Technologies Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY2548QC004 CY2548QC004 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2548QC003 CY2548QC003 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2545QI CY2545QI Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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ISC750P10LMATMA1 ISC750P10LMATMA1 Infineon Technologies Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
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ISC750P10LMATMA1 ISC750P10LMATMA1 Infineon Technologies Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
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FF200R12KT3HOSA1 FF200R12KT3HOSA1 Infineon Technologies Infineon-FF200R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43417c15f86 Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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FF150R12KT3GHOSA1 FF150R12KT3GHOSA1 Infineon Technologies Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82 Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IAUC40N08S5L140ATMA1 IAUC40N08S5L140ATMA1 Infineon Technologies Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
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IAUC40N08S5L140ATMA1 IAUC40N08S5L140ATMA1 Infineon Technologies Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
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8+2.7 EUR
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1000+0.81 EUR
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IRAMS06UP60B-2 IRAMS06UP60B-2 Infineon Technologies IRAMS06UP60B.pdf Description: IC PWR MOD PLUG-N-DRIVE 600V 6A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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IPB80N04S2L03ATMA1 IPB80N04S2L03ATMA1 Infineon Technologies IPB%2CIPP80N04S2L-03.pdf Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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REFSHA35IMD111TSYSTOBO1 REFSHA35IMD111TSYSTOBO1 Infineon Technologies Infineon-IMD110T-DataSheet-v01_01-EN.pdf?fileId=5546d462773f93240177489a1dcf0a7d Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
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CY8C4124LQE-S423 CY8C4124LQE-S423 Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Qualification: AEC-Q100
Number of I/O: 34
Grade: Automotive
Supplier Device Package: 40-QFN (6x6)
Packaging: Tray
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CY8C4124LQE-S423T CY8C4124LQE-S423T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 34
Grade: Automotive
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
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CY7C65631-56LTXCT CY7C65631-56LTXCT Infineon Technologies Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CY7C65631-56LTXCT CY7C65631-56LTXCT Infineon Technologies Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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ISC078N12NM6ATMA1 ISC078N12NM6ATMA1 Infineon Technologies Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
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ISC078N12NM6ATMA1 ISC078N12NM6ATMA1 Infineon Technologies Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
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IPI80N04S4L04AKSA1 IPI80N04S4L04AKSA1 Infineon Technologies IPx80N04S4L-04.pdf Description: MOSFET N-CH 40V 80A TO262-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IPB80N04S3H4ATMA1 IPB80N04S3H4ATMA1 Infineon Technologies IPx80N04S3-H4.pdf Description: MOSFET N-CH 40V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 65µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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IPI80N04S303AKSA1 IPI80N04S303AKSA1 Infineon Technologies IPx80N04S3-03.pdf Description: MOSFET N-CH 40V 80A TO262-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
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IPQC60T017S7XTMA1 IPQC60T017S7XTMA1 Infineon Technologies IPQC60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
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IPQC60T017S7XTMA1 IPQC60T017S7XTMA1 Infineon Technologies IPQC60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
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IPDQ60T017S7AXTMA1 IPDQ60T017S7AXTMA1 Infineon Technologies IPDQ60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
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IPDQ60T017S7AXTMA1 IPDQ60T017S7AXTMA1 Infineon Technologies IPDQ60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
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IPQC60T017S7AXTMA1 IPQC60T017S7AXTMA1 Infineon Technologies IPQC60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
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IPQC60T017S7AXTMA1 IPQC60T017S7AXTMA1 Infineon Technologies IPQC60T017S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
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IRGP4062-EPBF IRGP4062-EPBF Infineon Technologies IRGP4062-EPBF.pdf Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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BGS312MC27-2IE6433XUSA1 Infineon Technologies Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 648000 Stücke:
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S29GL064N90BFI030 S29GL064N90BFI030 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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S29GL064N90FAI010 S29GL064N90FAI010 Infineon Technologies S29GL064N_032N_RevB_5-26-17.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Grade: Automotive
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL064N90TFI043 S29GL064N90TFI043 Infineon Technologies infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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CY91F522KWBPMC-GSE2 CY91F522KWBPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CYW20829B0P4TAI100XUMA1 CYW20829B0P4TAI100XUMA1 Infineon Technologies Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4 Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
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CYW20829B0P4TAI100XUMA1 CYW20829B0P4TAI100XUMA1 Infineon Technologies Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4 Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
auf Bestellung 511 Stücke:
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2+16.81 EUR
10+14.58 EUR
25+13.8 EUR
100+12.74 EUR
250+12.11 EUR
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CYW20721B2KUMLG CYW20721B2KUMLG Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 172 Stücke:
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10+14.46 EUR
25+13.7 EUR
100+12.65 EUR
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CYW20730A2KML2G CYW20730A2KML2G Infineon Technologies Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825 Description: IC RF TXRX BLE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
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S29GL256S11DHVV23 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S11DHVV23
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6BP501A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S6BP501A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 1V ~ 1.3V, 3.2V ~ 3.4V, 5V ~ 5.2V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 2.5V ~ 42V
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Converter, Automotive
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S6BP502A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S6BP502A00SN2B200 Infineon-S6BP501A_S6BP502A_3ch_DC_DC_Converter_IC_for_Automotive_Cluster-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4bb925330
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 2.5V ~ 42V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 3
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5309DE5201XUMA1 TLE5309D.pdf
TLE5309DE5201XUMA1
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 29997 Stücke:
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AnzahlPrivatkunde
68+8.94 EUR
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CY14B256K-SP25XC cy14b256k_8.pdf
CY14B256K-SP25XC
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B101K-SP25XC CY14B101K.pdf
CY14B101K-SP25XC
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP60R180CM8XKSA1 Infineon-IPP60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c26db7824a2
IPP60R180CM8XKSA1
Hersteller: Infineon Technologies
Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 467 Stücke:
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4+5.7 EUR
10+3.69 EUR
50+2.82 EUR
100+2.55 EUR
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IMTA65R060M2HXTMA1 Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839
IMTA65R060M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
2000+5.15 EUR
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IMTA65R060M2HXTMA1 Infineon-IMTA65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8542e0839
IMTA65R060M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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2+13.72 EUR
10+9.22 EUR
50+7.31 EUR
100+6.69 EUR
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IMTA65R050M2HXTMA1 Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a
IMTA65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R050M2HXTMA1 Infineon-IMTA65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e8a7a9085a
IMTA65R050M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 1807 Stücke:
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2+14.14 EUR
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100+6.96 EUR
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IMTA65R040M2HXTMA1 Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3
IMTA65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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2000+6.63 EUR
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IMTA65R040M2HXTMA1 Infineon-IMTA65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e9269c08c3
IMTA65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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2+16.34 EUR
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100+8.19 EUR
500+8.1 EUR
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IMTA65R020M2HXTMA1 Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa
IMTA65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMTA65R020M2HXTMA1 Infineon-IMTA65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018fa5e7e59607fa
IMTA65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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1+26.79 EUR
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FZ1200R45HL4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 4500V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 1.2kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.2 kA
Voltage - Collector Emitter Breakdown (Max): 4.3 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 223000 pF @ 25 V
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1+3027.54 EUR
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BC817K25E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K25E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC817K25E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K25E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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S25FL512SAGBHEA10 Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f
S25FL512SAGBHEA10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS3L30R07W2H3FB11BPSA2 Infineon-FS3L30R07W2H3F_B11-DS-v3_1-en_de.pdf?fileId=db3a30433fe811c7013fec1c12383cd9
FS3L30R07W2H3FB11BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 30A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
auf Bestellung 15 Stücke:
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4+179.96 EUR
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S6BP401AL3SN1B000
Hersteller: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY2548QC004 download
CY2548QC004
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2548QC003 download
CY2548QC003
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QI Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 490 Stücke
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ISC750P10LMATMA1 Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef
ISC750P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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ISC750P10LMATMA1 Infineon-ISC750P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4be8536ef
ISC750P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.3A
Supplier Device Package: PG-TDSON-8-7
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1317 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.46 EUR
10+3.55 EUR
100+2.46 EUR
500+2.07 EUR
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FF200R12KT3HOSA1 Infineon-FF200R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43417c15f86
FF200R12KT3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 6 Stücke:
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AnzahlPrivatkunde
3+282.84 EUR
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FF150R12KT3GHOSA1 Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82
FF150R12KT3GHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+203.25 EUR
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IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
IAUC40N08S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
IAUC40N08S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
13+1.71 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.81 EUR
2000+0.74 EUR
Mindestbestellmenge: 8 Stücke
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IRAMS06UP60B-2 IRAMS06UP60B.pdf
IRAMS06UP60B-2
Hersteller: Infineon Technologies
Description: IC PWR MOD PLUG-N-DRIVE 600V 6A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPB80N04S2L03ATMA1 IPB%2CIPP80N04S2L-03.pdf
IPB80N04S2L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
194+2.76 EUR
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REFSHA35IMD111TSYSTOBO1 Infineon-IMD110T-DataSheet-v01_01-EN.pdf?fileId=5546d462773f93240177489a1dcf0a7d
REFSHA35IMD111TSYSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+158.82 EUR
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CY8C4124LQE-S423
CY8C4124LQE-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Qualification: AEC-Q100
Number of I/O: 34
Grade: Automotive
Supplier Device Package: 40-QFN (6x6)
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4124LQE-S423T
CY8C4124LQE-S423T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 34
Grade: Automotive
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C65631-56LTXCT Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
CY7C65631-56LTXCT
Hersteller: Infineon Technologies
Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+10.03 EUR
Mindestbestellmenge: 2000 Stücke
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CY7C65631-56LTXCT Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
CY7C65631-56LTXCT
Hersteller: Infineon Technologies
Description: IC USB CTLR 2.0 4PORT AEC 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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ISC078N12NM6ATMA1 Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7
ISC078N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Produkt ist nicht verfügbar
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ISC078N12NM6ATMA1 Infineon-ISC078N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec91036c0ea7
ISC078N12NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+3.86 EUR
100+2.67 EUR
500+2.15 EUR
1000+2 EUR
2000+1.88 EUR
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IPI80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPI80N04S4L04AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
650+0.89 EUR
Mindestbestellmenge: 650 Stücke
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IPB80N04S3H4ATMA1 IPx80N04S3-H4.pdf
IPB80N04S3H4ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 65µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 13200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
406+1.37 EUR
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IPI80N04S303AKSA1 IPx80N04S3-03.pdf
IPI80N04S303AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 172000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
251+2.32 EUR
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IPQC60T017S7XTMA1 IPQC60T017S7.pdf
IPQC60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPQC60T017S7XTMA1 IPQC60T017S7.pdf
IPQC60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T017S7AXTMA1 IPDQ60T017S7A_Rev2.0_11-30-23.pdf
IPDQ60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ60T017S7AXTMA1 IPDQ60T017S7A_Rev2.0_11-30-23.pdf
IPDQ60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7A_Rev2.0_11-30-23.pdf
IPQC60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPQC60T017S7AXTMA1 IPQC60T017S7A_Rev2.0_11-30-23.pdf
IPQC60T017S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRGP4062-EPBF IRGP4062-EPBF.pdf
IRGP4062-EPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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BGS312MC27-2IE6433XUSA1
Hersteller: Infineon Technologies
Description: BGS312MC27 - LIMITED DATA AVAILA
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
701+0.86 EUR
Mindestbestellmenge: 701 Stücke
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S29GL064N90BFI030 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90BFI030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL064N90FAI010 S29GL064N_032N_RevB_5-26-17.pdf
S29GL064N90FAI010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8, 4M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Grade: Automotive
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL064N90TFI043 infineon-s29gl064n-s29gl032n-64-mbit-32-mbit-3-v-page-mode-mirrorbit-flash-datasheet-en.pdf
S29GL064N90TFI043
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F522KWBPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522KWBPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20829B0P4TAI100XUMA1 Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4
CYW20829B0P4TAI100XUMA1
Hersteller: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+11.66 EUR
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CYW20829B0P4TAI100XUMA1 Infineon-CYW20829B0-P4TAI100_CYW20829B0-P4EPI100_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d5df5d7d635e4
CYW20829B0P4TAI100XUMA1
Hersteller: Infineon Technologies
Description: CYW20829B0P4TAI100XUMA1
Packaging: Cut Tape (CT)
Package / Case: 41-SMD Module
Sensitivity: -106dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.75V ~ 3.6V
Power - Output: 10dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.4
Current - Receiving: 5.6mA
Current - Transmitting: 5.2mA ~ 17.2mA
Antenna Type: PCB Trace
Utilized IC / Part: CYW20829
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, I2C, I2S, IrDA, JTAG, PCM, PWM, SPI, UART
auf Bestellung 511 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.81 EUR
10+14.58 EUR
25+13.8 EUR
100+12.74 EUR
250+12.11 EUR
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CYW20721B2KUMLG Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLG
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.67 EUR
10+14.46 EUR
25+13.7 EUR
100+12.65 EUR
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CYW20730A2KML2G Infineon-CYW20730_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices_Datasheet-AdditionalTechnicalInformation-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f8da6825
CYW20730A2KML2G
Hersteller: Infineon Technologies
Description: IC RF TXRX BLE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 60kB RAM
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V
Power - Output: 4dBm
Protocol: Bluetooth v5.1
Current - Receiving: 26.6mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
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