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IPD60R520C6BTMA1 IPD60R520C6BTMA1 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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S29GL01GS11DHA020 S29GL01GS11DHA020 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
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CY15B116QI-20BKXCT CY15B116QI-20BKXCT Infineon Technologies Description: FRAM
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 2M x 8
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CY62158ELL-45ZSXIT CY62158ELL-45ZSXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY62158ELL-45ZSXIT CY62158ELL-45ZSXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY9AF131LAPMC1-G-UNE2 CY9AF131LAPMC1-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 52
DigiKey Programmable: Not Verified
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320+10.01 EUR
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CY9AF132LAPMC1-G-UNE2 CY9AF132LAPMC1-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 52
DigiKey Programmable: Not Verified
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CY9AF132LBQN-G-AVE2 CY9AF132LBQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 52
DigiKey Programmable: Not Verified
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CY9AF132KBQN-G-AVE2 CY9AF132KBQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
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IRFP048NPBF IRFP048NPBF Infineon Technologies IRSDS10312-1.pdf?t.download=true&u=5oefqw Description: IRFP048 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FS13MR12W2M1HC55BPSA1 FS13MR12W2M1HC55BPSA1 Infineon Technologies Infineon-FS13MR12W2M1H_C55-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8c3de074018c58e489a21602 Description: LOW POWER EASY
Packaging: Tray
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CYAT817AZS61-22002 CYAT817AZS61-22002 Infineon Technologies Description: TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT847AZA61-22002 CYAT847AZA61-22002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT847AZS61-22002 CYAT847AZS61-22002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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EVALM3TS6665PNTOBO1 EVALM3TS6665PNTOBO1 Infineon Technologies Infineon-iMOTION_MADK_Evaluation_Platform-PB-v01_00-EN.pdf?fileId=5546d46265487f7b0165d356fa786cd6 Description: EVAL BOARD FOR IKB20N65H5
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKB20N65H5, IKD06N65ET6, IRS2890DS, IRS44273L
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
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BSO4804HUMA2 BSO4804HUMA2 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
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FF450R12KT4PHOSA1 FF450R12KT4PHOSA1 Infineon Technologies Infineon-FF450R12KT4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e6836acc78d2 Description: IGBT MODULE 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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DZ950N36KHPSA1 DZ950N36KHPSA1 Infineon Technologies Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e Description: DIODE GEN PURP 3.6KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
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CY25701FLXIT CY25701FLXIT Infineon Technologies Infineon-CY25701_Programmable_High_Frequency_Crystal_Oscillator_with_Spread_Spectrum_(SSXO)_and_No_Spread_Spectrum_(XO)_Option-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b3d63550 Description: IC OSC XTAL PROG 4-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 4-CLCC
Mounting Type: Surface Mount
Frequency: 10MHz ~ 166MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 4-CLCC (5x3.2)
Current - Supply: 50 mA
Produkt ist nicht verfügbar
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SPS01N60C3 SPS01N60C3 Infineon Technologies SPS01N60C3.pdf Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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KT110 KT110 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
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CY9AF311NAPMC-GNE2 CY9AF311NAPMC-GNE2 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S27KL0642GABHA023 S27KL0642GABHA023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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CY8C6248LQI-S2D02 CY8C6248LQI-S2D02 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1 Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
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IPD70N10S312ATMA2 IPD70N10S312ATMA2 Infineon Technologies Infineon-IPD70N10S3-12-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908858535951 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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IPB70N10S3L12ATMA2 IPB70N10S3L12ATMA2 Infineon Technologies Infineon-IPP_B_I70N10S3L-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a907bea255942 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB70N10S312ATMA2 IPB70N10S312ATMA2 Infineon Technologies Infineon-IPP_B_I70N10S3_12-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a909803815967 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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IPP70N10S3L12AKSA2 IPP70N10S3L12AKSA2 Infineon Technologies Infineon-IPP_B_I70N10S3L-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a907bea255942 Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C20336H-24LQXI CY8C20336H-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C20336H-24LQXIT CY8C20336H-24LQXIT Infineon Technologies CY8C20336H%2C446H.pdf Description: MCU PSOC 8K FLASH 24MHZ 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY7C1441KV33-133AXM CY7C1441KV33-133AXM Infineon Technologies Infineon-CY7C1441KV33_Military_Temperature_36-Mbit_(1M_X_36)_Flow-Through_SRAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee24a8f68c1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF3305 AUIRF3305 Infineon Technologies IRSDS11391-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 140A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Qualification: AEC-Q101
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CY2308SXC-1H CY2308SXC-1H Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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1+21.79 EUR
10+17.28 EUR
48+15.76 EUR
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CY2308SXC-4 CY2308SXC-4 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-2T CY2308SXC-2T Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-3 CY2308SXC-3 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-1T CY2308SXC-1T Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF1500R17IP5BPSA1 FF1500R17IP5BPSA1 Infineon Technologies Infineon-FF1500R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e7f2c2c0002 Description: IGBT MOD 1700V 1500A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
auf Bestellung 821 Stücke:
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1+1298.42 EUR
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FD16001200R17HP4KB2BOSA1 FD16001200R17HP4KB2BOSA1 Infineon Technologies Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e Description: IGBT MOD 1700V 1600A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
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FD800R17HP4KB2BOSA2 FD800R17HP4KB2BOSA2 Infineon Technologies Infineon-FD800R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e21232c6b16 Description: IGBT MOD 1700V 800A 5200W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 421 Stücke:
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FZ1800R17HP4B29BOSA2 FZ1800R17HP4B29BOSA2 Infineon Technologies Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09 Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KT4HOSA1 FF600R12KT4HOSA1 Infineon Technologies Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693 Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Infineon Technologies IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 400 Stücke:
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108+4.53 EUR
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CY8C20666AS-24LQXI CY8C20666AS-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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2+10.28 EUR
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IRAM256-1067A2 Infineon Technologies IRAM256-1067A.pdf Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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S25FL512SDPMFI010 S25FL512SDPMFI010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
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4+4.79 EUR
10+3.98 EUR
100+3.17 EUR
500+2.68 EUR
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BTS700121ESPXUMA2 BTS700121ESPXUMA2 Infineon Technologies Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7 Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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ITS6035SEPKXUMA1 ITS6035SEPKXUMA1 Infineon Technologies Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3000 Stücke:
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3000+2.98 EUR
Mindestbestellmenge: 3000
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ITS6035SEPKXUMA1 ITS6035SEPKXUMA1 Infineon Technologies Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3105 Stücke:
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10+4.19 EUR
25+3.85 EUR
100+3.47 EUR
250+3.29 EUR
500+3.18 EUR
1000+3.09 EUR
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2EDL8033G3CXTMA1 2EDL8033G3CXTMA1 Infineon Technologies Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 3900 Stücke:
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13+1.39 EUR
25+1.26 EUR
100+1.12 EUR
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2EDL8034G3CXTMA1 2EDL8034G3CXTMA1 Infineon Technologies Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 1881 Stücke:
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13+1.39 EUR
25+1.25 EUR
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250+1.04 EUR
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2ED2772S01GXTMA1 2ED2772S01GXTMA1 Infineon Technologies Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Produkt ist nicht verfügbar
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2ED2772S01GXTMA1 2ED2772S01GXTMA1 Infineon Technologies Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 2397 Stücke:
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8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
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1000+1.27 EUR
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2ED2778S01GXTMA1 2ED2778S01GXTMA1 Infineon Technologies Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
auf Bestellung 197 Stücke:
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AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
10+2.92 EUR
100+2.02 EUR
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2000+1.4 EUR
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S25FL128SDPBHID10 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 IMBG120R017M2HXTMA1 Infineon Technologies Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
Produkt ist nicht verfügbar
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IPD60R520C6BTMA1 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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S29GL01GS11DHA020 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL01GS11DHA020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY15B116QI-20BKXCT
CY15B116QI-20BKXCT
Hersteller: Infineon Technologies
Description: FRAM
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
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CY62158ELL-45ZSXIT download
CY62158ELL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62158ELL-45ZSXIT download
CY62158ELL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 273 Stücke:
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Anzahl Preis
1+22.16 EUR
10+20.56 EUR
25+19.91 EUR
50+19.43 EUR
100+18.95 EUR
250+18.68 EUR
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CY9AF131LAPMC1-G-UNE2 download
CY9AF131LAPMC1-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 52
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
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Anzahl Preis
2+14.01 EUR
10+12.66 EUR
25+12.07 EUR
160+10.48 EUR
320+10.01 EUR
480+9.13 EUR
960+7.95 EUR
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CY9AF132LAPMC1-G-UNE2 download
CY9AF132LAPMC1-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF132LBQN-G-AVE2 download
CY9AF132LBQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 52
DigiKey Programmable: Not Verified
auf Bestellung 310 Stücke:
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Anzahl Preis
2+14.01 EUR
10+12.66 EUR
25+12.07 EUR
80+10.48 EUR
260+10.01 EUR
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CY9AF132KBQN-G-AVE2 download
CY9AF132KBQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.01 EUR
10+12.66 EUR
25+12.07 EUR
80+10.48 EUR
260+10.01 EUR
Mindestbestellmenge: 2
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IRFP048NPBF IRSDS10312-1.pdf?t.download=true&u=5oefqw
IRFP048NPBF
Hersteller: Infineon Technologies
Description: IRFP048 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 34892 Stücke:
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Anzahl Preis
424+1.15 EUR
Mindestbestellmenge: 424
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FS13MR12W2M1HC55BPSA1 Infineon-FS13MR12W2M1H_C55-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8c3de074018c58e489a21602
FS13MR12W2M1HC55BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+299.55 EUR
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CYAT817AZS61-22002
CYAT817AZS61-22002
Hersteller: Infineon Technologies
Description: TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT847AZA61-22002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT847AZA61-22002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT847AZS61-22002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT847AZS61-22002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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EVALM3TS6665PNTOBO1 Infineon-iMOTION_MADK_Evaluation_Platform-PB-v01_00-EN.pdf?fileId=5546d46265487f7b0165d356fa786cd6
EVALM3TS6665PNTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IKB20N65H5
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKB20N65H5, IKD06N65ET6, IRS2890DS, IRS44273L
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+763 EUR
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BSO4804HUMA2 fundamentals-of-power-semiconductors
BSO4804HUMA2
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
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FF450R12KT4PHOSA1 Infineon-FF450R12KT4P-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153e6836acc78d2
FF450R12KT4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 38 Stücke:
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Anzahl Preis
3+201.36 EUR
Mindestbestellmenge: 3
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DZ950N36KHPSA1 Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e
DZ950N36KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
Produkt ist nicht verfügbar
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CY25701FLXIT Infineon-CY25701_Programmable_High_Frequency_Crystal_Oscillator_with_Spread_Spectrum_(SSXO)_and_No_Spread_Spectrum_(XO)_Option-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b3d63550
CY25701FLXIT
Hersteller: Infineon Technologies
Description: IC OSC XTAL PROG 4-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 4-CLCC
Mounting Type: Surface Mount
Frequency: 10MHz ~ 166MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 4-CLCC (5x3.2)
Current - Supply: 50 mA
Produkt ist nicht verfügbar
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SPS01N60C3 SPS01N60C3.pdf
SPS01N60C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 43500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
775+0.63 EUR
Mindestbestellmenge: 775
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IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.67 EUR
Mindestbestellmenge: 127
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KT110 KT%2CKTY.pdf
KT110
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
auf Bestellung 99003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1385+0.37 EUR
Mindestbestellmenge: 1385
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CY9AF311NAPMC-GNE2
CY9AF311NAPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S27KL0642GABHA023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642GABHA023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6248LQI-S2D02 Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1
CY8C6248LQI-S2D02
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD70N10S312ATMA2 Infineon-IPD70N10S3-12-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908858535951
IPD70N10S312ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB70N10S3L12ATMA2 Infineon-IPP_B_I70N10S3L-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a907bea255942
IPB70N10S3L12ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB70N10S312ATMA2 Infineon-IPP_B_I70N10S3_12-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a909803815967
IPB70N10S312ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPP70N10S3L12AKSA2 Infineon-IPP_B_I70N10S3L-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a907bea255942
IPP70N10S3L12AKSA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C20336H-24LQXI CY8C20336H%2C446H.pdf
CY8C20336H-24LQXI
Hersteller: Infineon Technologies
Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C20336H-24LQXIT CY8C20336H%2C446H.pdf
CY8C20336H-24LQXIT
Hersteller: Infineon Technologies
Description: MCU PSOC 8K FLASH 24MHZ 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
113+4.34 EUR
Mindestbestellmenge: 113
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CY7C1441KV33-133AXM Infineon-CY7C1441KV33_Military_Temperature_36-Mbit_(1M_X_36)_Flow-Through_SRAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee24a8f68c1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
CY7C1441KV33-133AXM
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF3305 IRSDS11391-1.pdf?t.download=true&u=5oefqw
AUIRF3305
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 140A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
107+4.25 EUR
Mindestbestellmenge: 107
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CY2308SXC-1H Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.79 EUR
10+17.28 EUR
48+15.76 EUR
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CY2308SXC-4 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-4
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-2T Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-2T
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-3 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-3
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2308SXC-1T Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-1T
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF1500R17IP5BPSA1 Infineon-FF1500R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e7f2c2c0002
FF1500R17IP5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1500A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
auf Bestellung 821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1298.42 EUR
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FD16001200R17HP4KB2BOSA1 Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e
FD16001200R17HP4KB2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1600A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2167.83 EUR
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FD800R17HP4KB2BOSA2 Infineon-FD800R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e21232c6b16
FD800R17HP4KB2BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 800A 5200W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1836.6 EUR
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FZ1800R17HP4B29BOSA2 Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09
FZ1800R17HP4B29BOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KT4HOSA1 Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693
FF600R12KT4HOSA1
Hersteller: Infineon Technologies
Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+290.02 EUR
Mindestbestellmenge: 2
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IPP024N06N3GXKSA1 IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7
IPP024N06N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
108+4.53 EUR
Mindestbestellmenge: 108
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CY8C20666AS-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20666AS-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.28 EUR
Mindestbestellmenge: 2
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IRAM256-1067A2 IRAM256-1067A.pdf
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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S25FL512SDPMFI010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDPMFI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R170CFD7ATMA1 Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
IPB60R170CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.98 EUR
100+3.17 EUR
500+2.68 EUR
Mindestbestellmenge: 4
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BTS700121ESPXUMA2 Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7
BTS700121ESPXUMA2
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Produkt ist nicht verfügbar
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
ITS6035SEPKXUMA1
Hersteller: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.98 EUR
Mindestbestellmenge: 3000
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
ITS6035SEPKXUMA1
Hersteller: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+4.19 EUR
25+3.85 EUR
100+3.47 EUR
250+3.29 EUR
500+3.18 EUR
1000+3.09 EUR
Mindestbestellmenge: 4
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2EDL8033G3CXTMA1 Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81
2EDL8033G3CXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
13+1.39 EUR
25+1.26 EUR
100+1.12 EUR
250+1.05 EUR
500+1 EUR
1000+0.97 EUR
Mindestbestellmenge: 10
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2EDL8034G3CXTMA1 Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5
2EDL8034G3CXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 1881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
13+1.39 EUR
25+1.25 EUR
100+1.11 EUR
250+1.04 EUR
500+1 EUR
1000+0.96 EUR
Mindestbestellmenge: 10
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2ED2772S01GXTMA1 Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9
2ED2772S01GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Produkt ist nicht verfügbar
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2ED2772S01GXTMA1 Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9
2ED2772S01GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
auf Bestellung 2397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
500+1.31 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
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2ED2778S01GXTMA1 Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6
2ED2778S01GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
10+2.75 EUR
25+2.51 EUR
100+2.25 EUR
Mindestbestellmenge: 5
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AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+2.92 EUR
100+2.02 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.4 EUR
Mindestbestellmenge: 4
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S25FL128SDPBHID10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e
IMBG120R017M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
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