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S25FL064LABBHB023 S25FL064LABBHB023 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TD570N16KOFXPSA1 Infineon Technologies Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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CY4609 CY4609 Infineon Technologies Infineon-CY4609_HX3_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8f8a30eaa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR CYUSB3304
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Utilized IC / Part: CYUSB3304
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 4-Channel (Quad)
Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: I2C Interface(s)
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TLE9140EQWXUMA1 TLE9140EQWXUMA1 Infineon Technologies Infineon-TLE9140EQW-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c850f4bee018513fe4b2369e5 Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE9140EQWXUMA1 TLE9140EQWXUMA1 Infineon Technologies Infineon-TLE9140EQW-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c850f4bee018513fe4b2369e5 Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE4973A025T5S0001XUMA1 TLE4973A025T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973A025T5S0001XUMA1 TLE4973A025T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973A050T5S0001XUMA1 TLE4973A050T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973A050T5S0001XUMA1 TLE4973A050T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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156739-1A Infineon Technologies Description: INFINEON
Packaging: Bulk
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A2C01952000A Infineon Technologies Description: INFINEON
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A2C0195200000A Infineon Technologies Description: INFINEON
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111292 Infineon Technologies Description: INFINEON
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10324-08810 Infineon Technologies Description: INFINEON
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121877 Infineon Technologies Description: INFINEON
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1120204-00-A Infineon Technologies Description: INFINEON
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10324-05530 Infineon Technologies Description: INFINEON
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16-3989-01 Infineon Technologies Description: INFINEON
Packaging: Bulk
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IR3859MTRPBF IR3859MTRPBF Infineon Technologies ir3859m.pdf?fileId=5546d462533600a4015355d5926c17fe Description: IC REG BUCK ADJ 9A 17PQFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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AUIRF1324 AUIRF1324 Infineon Technologies IRSDS10899-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Grade: Automotive
Qualification: AEC-Q101
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EVALTOLTDC36V2KWTOBO1 EVALTOLTDC36V2KWTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_TOLT_DC36V_2KW-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01887770003a49c0 Description: THREE-PHASE POWER INVERTER BOARD
Packaging: Bulk
Contents: Board(s)
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CY27410LTXI-002 Infineon Technologies Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
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CY27410LTXI-013 CY27410LTXI-013 Infineon Technologies Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748 Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C1041CV33-12ZSXE CY7C1041CV33-12ZSXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IRGB4059DPBF IRGB4059DPBF Infineon Technologies IRGB4059DPbF.pdf description Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
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IRGB4059DPBF IRGB4059DPBF Infineon Technologies IRGB4059DPbF.pdf description Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
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CY9AF116MPMC-G-MNE1 CY9AF116MPMC-G-MNE1 Infineon Technologies Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 Infineon Technologies DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
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KP229E3201XTMA1 KP229E3201XTMA1 Infineon Technologies Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
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KP229E3201XTMA1 KP229E3201XTMA1 Infineon Technologies Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
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TLE4284DV26ATMA1 TLE4284DV26ATMA1 Infineon Technologies TLE4284.pdf Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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S25FL064P0XNFI003 S25FL064P0XNFI003 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IAUCN04S6N013TATMA1 IAUCN04S6N013TATMA1 Infineon Technologies Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N013TATMA1 IAUCN04S6N013TATMA1 Infineon Technologies Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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10+2.48 EUR
100+1.77 EUR
500+1.48 EUR
1000+1.37 EUR
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IRGP4620D-EPBF IRGP4620D-EPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGP4620D-EPBF IRGP4620D-EPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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IRGP4640PBF IRGP4640PBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRGP4640PBF IRGP4640PBF Infineon Technologies IRGP4640%28-E%29PBF.pdf Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRGP4630D-EPBF IRGP4630D-EPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
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AUIRGP66524D0 AUIRGP66524D0 Infineon Technologies AUIRGx66524D0.pdf Description: IGBT 600V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
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IRGP4660D-EPBF IRGP4660D-EPBF Infineon Technologies irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478 Description: IGBT 600V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGP4660D-EPBF IRGP4660D-EPBF Infineon Technologies irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478 Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGR2B60KDPBF IRGR2B60KDPBF Infineon Technologies IRGR2B60KDPBF.pdf Description: IGBT NPT 600V 6.3A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
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S99GL512S0180 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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S99GL512S10DHI010 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1009D-10VXIT CY7C1009D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1009D-10VXIT CY7C1009D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1010DV33-10VXI CY7C1010DV33-10VXI Infineon Technologies download Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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CY62157DV30LL-55ZSXI CY62157DV30LL-55ZSXI Infineon Technologies CY62157DV30.pdf Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDSMFBG10 S25FL128SDSMFBG10 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FZ400R12KS4PHOSA1 FZ400R12KS4PHOSA1 Infineon Technologies Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4 Description: IGBT MODULE 1200V 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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FF2400R12IP7BPSA1 Infineon Technologies Infineon-FF2MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a5843737d9 Description: IGBT MODULE
Packaging: Bulk
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FF2400R12IP7PBPSA1 FF2400R12IP7PBPSA1 Infineon Technologies FF2400R12IP7P_Rev1.00_6-9-23.pdf Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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FD1400R12IP4DBOSA1 Infineon Technologies Infineon-FD1400R12IP4D-DS-v02_03-en_de.pdf?fileId=db3a30431ddc9372011e16acde0e370d Description: MOSFET
Packaging: Bulk
auf Bestellung 76 Stücke:
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FF1400R12IP4B60BOSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
Produkt ist nicht verfügbar
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FF1400R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
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FZ2400R12HP4PHPSA1 Infineon Technologies Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
Produkt ist nicht verfügbar
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FZ2400R12HE4PB9HPSA1 FZ2400R12HE4PB9HPSA1 Infineon Technologies Infineon-FZ2400R12HE4P_B9-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd4894b9282a Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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7+2.53 EUR
11+1.61 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.78 EUR
2000+0.76 EUR
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S25FL064LABBHB023 INFN-S-A0017271261-1.pdf
S25FL064LABBHB023
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TD570N16KOFXPSA1 Infineon-TT570N16KOF-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42f96354c4e
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY4609 Infineon-CY4609_HX3_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8f8a30eaa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4609
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYUSB3304
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Utilized IC / Part: CYUSB3304
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 4-Channel (Quad)
Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: I2C Interface(s)
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1+112.36 EUR
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TLE9140EQWXUMA1 Infineon-TLE9140EQW-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c850f4bee018513fe4b2369e5
TLE9140EQWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE9140EQWXUMA1 Infineon-TLE9140EQW-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c850f4bee018513fe4b2369e5
TLE9140EQWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
auf Bestellung 912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
10+7.48 EUR
25+7.07 EUR
100+6.13 EUR
250+5.81 EUR
500+5.21 EUR
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TLE4973A025T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A025T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.41 EUR
Mindestbestellmenge: 2500
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TLE4973A025T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A025T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.28 EUR
5+8.35 EUR
10+8 EUR
25+7.58 EUR
50+7.3 EUR
100+7.04 EUR
500+6.51 EUR
1000+6.31 EUR
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TLE4973A050T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A050T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973A050T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A050T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.64 EUR
5+8.66 EUR
10+8.3 EUR
25+7.87 EUR
50+7.57 EUR
100+7.3 EUR
500+6.76 EUR
1000+6.56 EUR
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156739-1A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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A2C01952000A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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A2C0195200000A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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111292
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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10324-08810
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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121877
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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1120204-00-A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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10324-05530
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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16-3989-01
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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IR3859MTRPBF ir3859m.pdf?fileId=5546d462533600a4015355d5926c17fe
IR3859MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 9A 17PQFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
auf Bestellung 2295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
149+3.4 EUR
Mindestbestellmenge: 149
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AUIRF1324 IRSDS10899-1.pdf?t.download=true&u=5oefqw
AUIRF1324
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7842 Stücke:
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Anzahl Preis
168+2.71 EUR
Mindestbestellmenge: 168
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EVALTOLTDC36V2KWTOBO1 Infineon-Evaluation_board_EVAL_TOLT_DC36V_2KW-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01887770003a49c0
EVALTOLTDC36V2KWTOBO1
Hersteller: Infineon Technologies
Description: THREE-PHASE POWER INVERTER BOARD
Packaging: Bulk
Contents: Board(s)
auf Bestellung 2 Stücke:
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Anzahl Preis
1+1334.4 EUR
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CY27410LTXI-002
Hersteller: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
Produkt ist nicht verfügbar
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CY27410LTXI-013 Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748
CY27410LTXI-013
Hersteller: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041CV33-12ZSXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CY7C1041CV33-12ZSXE
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRGB4059DPBF description IRGB4059DPbF.pdf
IRGB4059DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
256+1.9 EUR
Mindestbestellmenge: 256
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IRGB4059DPBF description IRGB4059DPbF.pdf
IRGB4059DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
Produkt ist nicht verfügbar
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CY9AF116MPMC-G-MNE1
CY9AF116MPMC-G-MNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL65R1K5C6SATMA1 DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a
IPL65R1K5C6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 71852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
368+1.25 EUR
Mindestbestellmenge: 368
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KP229E3201XTMA1
KP229E3201XTMA1
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+5.1 EUR
Mindestbestellmenge: 1500
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KP229E3201XTMA1
KP229E3201XTMA1
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.7 EUR
Mindestbestellmenge: 2
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TLE4284DV26ATMA1 TLE4284.pdf
TLE4284DV26ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL064P0XNFI003 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XNFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN04S6N013TATMA1 Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4
IAUCN04S6N013TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S6N013TATMA1 Infineon-IAUCN04S6N013T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbe1a81ed4
IAUCN04S6N013TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.48 EUR
100+1.77 EUR
500+1.48 EUR
1000+1.37 EUR
Mindestbestellmenge: 5
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IRGP4620D-EPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
139+3.26 EUR
Mindestbestellmenge: 139
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IRGP4620D-EPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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IRGP4640PBF IRGP4640%28-E%29PBF.pdf
IRGP4640PBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.56 EUR
Mindestbestellmenge: 127
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IRGP4640PBF IRGP4640%28-E%29PBF.pdf
IRGP4640PBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRGP4630D-EPBF IRGx4630D%28-E%29PbF.pdf
IRGP4630D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+4.07 EUR
Mindestbestellmenge: 112
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AUIRGP66524D0 AUIRGx66524D0.pdf
AUIRGP66524D0
Hersteller: Infineon Technologies
Description: IGBT 600V 60A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
auf Bestellung 605 Stücke:
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Anzahl Preis
71+7.18 EUR
Mindestbestellmenge: 71
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IRGP4660D-EPBF irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478
IRGP4660D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
auf Bestellung 723 Stücke:
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Anzahl Preis
55+8.26 EUR
Mindestbestellmenge: 55
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IRGP4660D-EPBF irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478
IRGP4660D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGR2B60KDPBF IRGR2B60KDPBF.pdf
IRGR2B60KDPBF
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
auf Bestellung 933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.64 EUR
Mindestbestellmenge: 278
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S99GL512S0180
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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S99GL512S10DHI010
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1009D-10VXIT download
CY7C1009D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1009D-10VXIT download
CY7C1009D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1010DV33-10VXI download
CY7C1010DV33-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
90+5.5 EUR
Mindestbestellmenge: 90
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CY62157DV30LL-55ZSXI CY62157DV30.pdf
CY62157DV30LL-55ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SDSMFBG10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFBG10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FZ400R12KS4PHOSA1 Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4
FZ400R12KS4PHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+225.68 EUR
Mindestbestellmenge: 2
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FF2400R12IP7BPSA1 Infineon-FF2MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a5843737d9
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
auf Bestellung 6 Stücke:
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Anzahl Preis
1+1429.42 EUR
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FF2400R12IP7PBPSA1 FF2400R12IP7P_Rev1.00_6-9-23.pdf
FF2400R12IP7PBPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 9 Stücke:
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Anzahl Preis
1+1512.17 EUR
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FD1400R12IP4DBOSA1 Infineon-FD1400R12IP4D-DS-v02_03-en_de.pdf?fileId=db3a30431ddc9372011e16acde0e370d
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1101.07 EUR
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FF1400R12IP4B60BOSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
Produkt ist nicht verfügbar
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FF1400R12IP4PB60BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
Produkt ist nicht verfügbar
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FZ2400R12HP4PHPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
Produkt ist nicht verfügbar
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FZ2400R12HE4PB9HPSA1 Infineon-FZ2400R12HE4P_B9-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd4894b9282a
FZ2400R12HE4PB9HPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
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ISZ330N12LM6ATMA1 Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375
ISZ330N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Produkt ist nicht verfügbar
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ISZ330N12LM6ATMA1 Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375
ISZ330N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 2843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.61 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.78 EUR
2000+0.76 EUR
Mindestbestellmenge: 7
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