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2ED2778S01GXTMA1 2ED2778S01GXTMA1 Infineon Technologies Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
auf Bestellung 197 Stücke:
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10+2.75 EUR
25+2.51 EUR
100+2.25 EUR
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AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4270 Stücke:
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10+2.92 EUR
100+2.02 EUR
500+1.63 EUR
1000+1.50 EUR
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S25FL128SDPBHID10 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 IMBG120R017M2HXTMA1 Infineon Technologies Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 IMBG120R017M2HXTMA1 Infineon Technologies Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
auf Bestellung 453 Stücke:
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CYT2B98CACQ0AZEGS CYT2B98CACQ0AZEGS Infineon Technologies download Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
auf Bestellung 381 Stücke:
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IPP60R060C7XKSA1 IPP60R060C7XKSA1 Infineon Technologies Infineon-IPP60R060C7-DS-v02_00-EN.pdf?fileId=5546d4625185e0e201518c9680dd3fd1 Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
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100+6.06 EUR
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FS3L25R12W2H3PB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 18 Stücke:
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1+141.63 EUR
18+129.28 EUR
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CY8C20247S-24LKXI CY8C20247S-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
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CY8C20247S-24LKXI CY8C20247S-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY26114ZC CY26114ZC Infineon Technologies CY26114.pdf Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDK16G120C5XTMA1 IDK16G120C5XTMA1 Infineon Technologies Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44 Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Produkt ist nicht verfügbar
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FF900R17ME7WB11BPSA1 FF900R17ME7WB11BPSA1 Infineon Technologies FF900R17ME7W_B11_Rev1.00_11-21-23.pdf Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
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IRG4IBC20FDPBF IRG4IBC20FDPBF Infineon Technologies irg4ibc20fdpbf.pdf?fileId=5546d462533600a4015356436f4722ab Description: IGBT 600V 14.3A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
auf Bestellung 14000 Stücke:
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FF1800R12IE5BPSA1 FF1800R12IE5BPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
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F3L15MR12W2M1B69BOMA1 F3L15MR12W2M1B69BOMA1 Infineon Technologies Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942 Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
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F3L15MR12W2M1B69BOMA1 F3L15MR12W2M1B69BOMA1 Infineon Technologies Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Produkt ist nicht verfügbar
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FD300R12KS4HOSA1 FD300R12KS4HOSA1 Infineon Technologies Infineon-FD300R12KS4-DS-v02_02-en_de.pdf?fileId=db3a30431b3e89eb011bda539bde7d32 Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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FF300R12ME3BOSA1 FF300R12ME3BOSA1 Infineon Technologies Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029 Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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FF300R12ME3BOSA1 FF300R12ME3BOSA1 Infineon Technologies Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029 Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Produkt ist nicht verfügbar
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TDA16847 TDA16847 Infineon Technologies TDA16846%2C47%28-2%29.pdf Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
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IDW32G65C5BXKSA2 IDW32G65C5BXKSA2 Infineon Technologies Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272 Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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1+21.91 EUR
10+19.31 EUR
240+16.17 EUR
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1EDI05I12AHXUMA1 1EDI05I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI05I12AHXUMA1 1EDI05I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI30J12CPXUMA1 1EDI30J12CPXUMA1 Infineon Technologies Infineon-1EDI30J12CP-DS-v01_03-EN.pdf?fileId=db3a30433e0d3017013e117ce6090950 Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
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1EDI3051EVALBOARDTOBO2 1EDI3051EVALBOARDTOBO2 Infineon Technologies Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
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1EDI303XASEVALBOARDTOBO1 1EDI303XASEVALBOARDTOBO1 Infineon Technologies Infineon-Z8F80037256-1EDI302xAS_1EDI303xAS-evaluation-board-UserManual-v01_00-EN.pdf?fileId=5546d462773f932401774914b0c60e9e Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
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1EDI3050EVALBOARDTOBO1 1EDI3050EVALBOARDTOBO1 Infineon Technologies Infineon-1EDI3050-AS-1EDI3051-AS-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bf26e98685bf2 Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
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1EDI3050ASXUMA1 1EDI3050ASXUMA1 Infineon Technologies Infineon-1EDI3050AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b4833d9280984 Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3050ASXUMA1 1EDI3050ASXUMA1 Infineon Technologies Infineon-1EDI3050AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b4833d9280984 Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
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2+10.67 EUR
10+9.63 EUR
25+9.19 EUR
100+7.98 EUR
250+7.62 EUR
500+6.94 EUR
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1EDI3051ASXUMA1 1EDI3051ASXUMA1 Infineon Technologies Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3051ASXUMA1 1EDI3051ASXUMA1 Infineon Technologies Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ITD50N04S4L07ATMA1 Infineon Technologies Infineon-ITD50N04S4L-07-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01612276ce972aeb Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
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IRS2336DJPBF IRS2336DJPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DZ950N44KHPSA1 DZ950N44KHPSA1 Infineon Technologies Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
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1+1210.42 EUR
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DZ950N44KS02HPSA1 DZ950N44KS02HPSA1 Infineon Technologies Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Produkt ist nicht verfügbar
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CY8C20524-12PVXI CY8C20524-12PVXI Infineon Technologies Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6 Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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MB39A112PFT-G-BND-ERE1 MB39A112PFT-G-BND-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
Produkt ist nicht verfügbar
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MB39A135PFT-G-JN-ERE1 MB39A135PFT-G-JN-ERE1 Infineon Technologies DS_428_MB39A135.pdf Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A135PFT-G-JN-ERE1 MB39A135PFT-G-JN-ERE1 Infineon Technologies DS_428_MB39A135.pdf Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A134PFT-G-BND-ERE1 MB39A134PFT-G-BND-ERE1 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
Produkt ist nicht verfügbar
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IPP027N08N5XKSA1 IPP027N08N5XKSA1 Infineon Technologies Infineon-IPP027N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014acf48b5061bd4 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Produkt ist nicht verfügbar
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EVAL1ED3142MU12FSICTOBO1 EVAL1ED3142MU12FSICTOBO1 Infineon Technologies Infineon-UG2023-02_EVAL-1ED3142MU12F-SiC-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187ed776a611a1a Description: EVAL BRD FOR EICEDRIVER
Packaging: Bulk
auf Bestellung 12 Stücke:
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1+145.25 EUR
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CY7S1049G30-10VXI CY7S1049G30-10VXI Infineon Technologies Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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50+12.92 EUR
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CY7S1049G30-10VXI CY7S1049G30-10VXI Infineon Technologies Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7S1049GE30-10VXI CY7S1049GE30-10VXI Infineon Technologies Infineon-CY7S1049G_CY7S1049GE_4_Mbit_(512K_words_x_8_bit)_Static_RAM_with_PowerSnooze_and_Error_Correcting_Code_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8de7c5a8c Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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37+13.52 EUR
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S29GL256S90TFA020 S29GL256S90TFA020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21534-12PVXE CY8C21534-12PVXE Infineon Technologies Infineon-CY8C21334_CY8C21534_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecafbff4426&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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FF1800XTR17T2P5PBPSA1 FF1800XTR17T2P5PBPSA1 Infineon Technologies Infineon-FF1800XTR17T2P5P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7bf9c0757c3e Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
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IPI80N08S406AKSA1 IPI80N08S406AKSA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6785 Stücke:
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IPP70N04S406AKSA1 IPP70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98 Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 49890 Stücke:
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304+1.67 EUR
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IPP47N10SL26AKSA1 IPP47N10SL26AKSA1 Infineon Technologies IPx47N10SL-26.pdf Description: MOSFET N-CH 100V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 250 Stücke:
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250+1.01 EUR
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IPP339N20NM6AKSA1 IPP339N20NM6AKSA1 Infineon Technologies Infineon-IPP339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327daa8a0f0a Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 473 Stücke:
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4+5.26 EUR
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CY9AFA42MAPMC-G-MNE2 CY9AFA42MAPMC-G-MNE2 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 1188 Stücke:
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4+5.61 EUR
10+4.10 EUR
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119+3.27 EUR
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CY9AF141NBPMC-G-JNE2 CY9AF141NBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
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2+11.33 EUR
10+8.81 EUR
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CY9AFB44NBBGL-GE1 CY9AFB44NBBGL-GE1 Infineon Technologies Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 40 Stücke:
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1+18.20 EUR
10+16.44 EUR
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CY9AFA44MBBGL-GK9E1 CY9AFA44MBBGL-GK9E1 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8 Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF144MBBGL-GK9E1 CY9AF144MBBGL-GK9E1 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576 Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AFA41MBBGL-GK9E1 CY9AFA41MBBGL-GK9E1 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8 Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2778S01GXTMA1 Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6
2ED2778S01GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
auf Bestellung 197 Stücke:
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Anzahl Preis
5+3.70 EUR
10+2.75 EUR
25+2.51 EUR
100+2.25 EUR
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AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+2.92 EUR
100+2.02 EUR
500+1.63 EUR
1000+1.50 EUR
2000+1.40 EUR
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S25FL128SDPBHID10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e
IMBG120R017M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R017M2HXTMA1 Infineon-IMBG120R017M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffd3ee208e
IMBG120R017M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.80 EUR
10+21.23 EUR
100+16.43 EUR
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CYT2B98CACQ0AZEGS download
CYT2B98CACQ0AZEGS
Hersteller: Infineon Technologies
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.34 EUR
10+22.51 EUR
25+21.06 EUR
100+19.46 EUR
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IPP60R060C7XKSA1 Infineon-IPP60R060C7-DS-v02_00-EN.pdf?fileId=5546d4625185e0e201518c9680dd3fd1
IPP60R060C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 437 Stücke:
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Anzahl Preis
2+12.23 EUR
50+6.60 EUR
100+6.06 EUR
Mindestbestellmenge: 2
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FS3L25R12W2H3PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 18 Stücke:
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Anzahl Preis
1+141.63 EUR
18+129.28 EUR
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CY8C20247S-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20247S-24LKXI
Hersteller: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
auf Bestellung 978 Stücke:
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Anzahl Preis
10+1.81 EUR
Mindestbestellmenge: 10
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CY8C20247S-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20247S-24LKXI
Hersteller: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY26114ZC CY26114.pdf
CY26114ZC
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDK16G120C5XTMA1 Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44
IDK16G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Produkt ist nicht verfügbar
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FF900R17ME7WB11BPSA1 FF900R17ME7W_B11_Rev1.00_11-21-23.pdf
FF900R17ME7WB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+729.04 EUR
12+707.11 EUR
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IRG4IBC20FDPBF irg4ibc20fdpbf.pdf?fileId=5546d462533600a4015356436f4722ab
IRG4IBC20FDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 14.3A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
187+2.71 EUR
Mindestbestellmenge: 187
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FF1800R12IE5BPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1335.24 EUR
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F3L15MR12W2M1B69BOMA1 Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942
F3L15MR12W2M1B69BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+238.70 EUR
Mindestbestellmenge: 3
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F3L15MR12W2M1B69BOMA1 Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942
F3L15MR12W2M1B69BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Produkt ist nicht verfügbar
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FD300R12KS4HOSA1 Infineon-FD300R12KS4-DS-v02_02-en_de.pdf?fileId=db3a30431b3e89eb011bda539bde7d32
FD300R12KS4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+208.67 EUR
Mindestbestellmenge: 3
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FF300R12ME3BOSA1 Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029
FF300R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+249.76 EUR
Mindestbestellmenge: 2
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FF300R12ME3BOSA1 Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029
FF300R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Produkt ist nicht verfügbar
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TDA16847 TDA16846%2C47%28-2%29.pdf
TDA16847
Hersteller: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
348+1.40 EUR
Mindestbestellmenge: 348
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IDW32G65C5BXKSA2 Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272
IDW32G65C5BXKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.91 EUR
10+19.31 EUR
240+16.17 EUR
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1EDI05I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI05I12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI05I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI05I12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI30J12CPXUMA1 Infineon-1EDI30J12CP-DS-v01_03-EN.pdf?fileId=db3a30433e0d3017013e117ce6090950
1EDI30J12CPXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
auf Bestellung 46670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
120+4.14 EUR
Mindestbestellmenge: 120
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1EDI3051EVALBOARDTOBO2
1EDI3051EVALBOARDTOBO2
Hersteller: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+223.96 EUR
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1EDI303XASEVALBOARDTOBO1 Infineon-Z8F80037256-1EDI302xAS_1EDI303xAS-evaluation-board-UserManual-v01_00-EN.pdf?fileId=5546d462773f932401774914b0c60e9e
1EDI303XASEVALBOARDTOBO1
Hersteller: Infineon Technologies
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+234.64 EUR
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1EDI3050EVALBOARDTOBO1 Infineon-1EDI3050-AS-1EDI3051-AS-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bf26e98685bf2
1EDI3050EVALBOARDTOBO1
Hersteller: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+235.45 EUR
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1EDI3050ASXUMA1 Infineon-1EDI3050AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b4833d9280984
1EDI3050ASXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3050ASXUMA1 Infineon-1EDI3050AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b4833d9280984
1EDI3050ASXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+9.63 EUR
25+9.19 EUR
100+7.98 EUR
250+7.62 EUR
500+6.94 EUR
Mindestbestellmenge: 2
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1EDI3051ASXUMA1 Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf
1EDI3051ASXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3051ASXUMA1 Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf
1EDI3051ASXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ITD50N04S4L07ATMA1 Infineon-ITD50N04S4L-07-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01612276ce972aeb
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRS2336DJPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336DJPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DZ950N44KHPSA1 Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e
DZ950N44KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1210.42 EUR
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DZ950N44KS02HPSA1 Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e
DZ950N44KS02HPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Produkt ist nicht verfügbar
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CY8C20524-12PVXI Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6
CY8C20524-12PVXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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MB39A112PFT-G-BND-ERE1 download
MB39A112PFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
Produkt ist nicht verfügbar
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MB39A135PFT-G-JN-ERE1 DS_428_MB39A135.pdf
MB39A135PFT-G-JN-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A135PFT-G-JN-ERE1 DS_428_MB39A135.pdf
MB39A135PFT-G-JN-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A134PFT-G-BND-ERE1 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB39A134PFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
Produkt ist nicht verfügbar
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IPP027N08N5XKSA1 Infineon-IPP027N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014acf48b5061bd4
IPP027N08N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Produkt ist nicht verfügbar
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EVAL1ED3142MU12FSICTOBO1 Infineon-UG2023-02_EVAL-1ED3142MU12F-SiC-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187ed776a611a1a
EVAL1ED3142MU12FSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD FOR EICEDRIVER
Packaging: Bulk
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+145.25 EUR
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CY7S1049G30-10VXI Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7S1049G30-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
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Anzahl Preis
50+12.92 EUR
Mindestbestellmenge: 50
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CY7S1049G30-10VXI Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7S1049G30-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7S1049GE30-10VXI Infineon-CY7S1049G_CY7S1049GE_4_Mbit_(512K_words_x_8_bit)_Static_RAM_with_PowerSnooze_and_Error_Correcting_Code_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8de7c5a8c
CY7S1049GE30-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 220 Stücke:
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Anzahl Preis
37+13.52 EUR
Mindestbestellmenge: 37
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S29GL256S90TFA020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TFA020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21534-12PVXE Infineon-CY8C21334_CY8C21534_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecafbff4426&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
CY8C21534-12PVXE
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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FF1800XTR17T2P5PBPSA1 Infineon-FF1800XTR17T2P5P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7bf9c0757c3e
FF1800XTR17T2P5PBPSA1
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
auf Bestellung 24 Stücke:
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Anzahl Preis
1+1747.08 EUR
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IPI80N08S406AKSA1 IPx80N08S4-06.pdf
IPI80N08S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
101+4.60 EUR
Mindestbestellmenge: 101
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IPP70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98
IPP70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 49890 Stücke:
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Anzahl Preis
304+1.67 EUR
Mindestbestellmenge: 304
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IPP47N10SL26AKSA1 IPx47N10SL-26.pdf
IPP47N10SL26AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 250 Stücke:
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Anzahl Preis
250+1.01 EUR
Mindestbestellmenge: 250
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IPP339N20NM6AKSA1 Infineon-IPP339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327daa8a0f0a
IPP339N20NM6AKSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 473 Stücke:
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Anzahl Preis
4+5.26 EUR
50+3.21 EUR
100+3.02 EUR
Mindestbestellmenge: 4
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CY9AFA42MAPMC-G-MNE2 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf
CY9AFA42MAPMC-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 1188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
10+4.10 EUR
25+3.72 EUR
119+3.27 EUR
238+3.12 EUR
Mindestbestellmenge: 4
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CY9AF141NBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141NBPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.33 EUR
10+8.81 EUR
90+7.74 EUR
Mindestbestellmenge: 2
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CY9AFB44NBBGL-GE1 Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFB44NBBGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.20 EUR
10+16.44 EUR
25+15.68 EUR
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CY9AFA44MBBGL-GK9E1 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8
CY9AFA44MBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF144MBBGL-GK9E1 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576
CY9AF144MBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AFA41MBBGL-GK9E1 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8
CY9AFA41MBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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