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S29GL128P11FFIS30 S29GL128P11FFIS30 Infineon Technologies Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3004 Stücke:
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10+7.98 EUR
25+7.83 EUR
40+7.77 EUR
136+6.97 EUR
272+6.95 EUR
544+6.51 EUR
952+6.24 EUR
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IAUCN04S6N009TATMA1 IAUCN04S6N009TATMA1 Infineon Technologies Infineon-IAUCN04S6N009T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbd5151ed1 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N009TATMA1 IAUCN04S6N009TATMA1 Infineon Technologies Infineon-IAUCN04S6N009T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbd5151ed1 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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100+2.1 EUR
500+1.76 EUR
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S29GL128S90FAI020 Infineon Technologies Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 90 ns
Memory Organization: 8M x 16
Produkt ist nicht verfügbar
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S26KL512SDABHA030 S26KL512SDABHA030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S26KL512SDABHN020 S26KL512SDABHN020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KL512SDABHN030 S26KL512SDABHN030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KL512SDABHM030 S26KL512SDABHM030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FS50R12W2T7PB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 18 Stücke:
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18+73.17 EUR
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FS50R06KE3BPSA1 FS50R06KE3BPSA1 Infineon Technologies Infineon-FS50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432ea305a10 Description: IGBT MODULE 600V 70A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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T1960N22TOFVTXPSA1 T1960N22TOFVTXPSA1 Infineon Technologies Infineon-T1960N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712b08bb3c403f Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Bulk
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
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IM240M6Y2BAKMA1 IM240M6Y2BAKMA1 Infineon Technologies Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea Description: MODULE IGBT 600V 4A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: IGBT
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
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BCR 503 B6327 BCR 503 B6327 Infineon Technologies bcr503.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407759130305 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DD171N18KHPSA2 DD171N18KHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GP 1800V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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ND171N18KHPSA2 ND171N18KHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE GEN PURP 1.8KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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DD171N18KHPSA1 DD171N18KHPSA1 Infineon Technologies Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GP 1800V 171A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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DD171N18KHPSA1 DD171N18KHPSA1 Infineon Technologies Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GP 1800V 171A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Produkt ist nicht verfügbar
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CY8C4126LTI-M475 CY8C4126LTI-M475 Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
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CYUSB3015-BZXCT CYUSB3015-BZXCT Infineon Technologies Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
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CYUSB3015-BZXIT CYUSB3015-BZXIT Infineon Technologies Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
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TLE4983CHTE6547HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Grade: Automotive
Qualification: AEC-Q100
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FD650R17IE4BOSA2 FD650R17IE4BOSA2 Infineon Technologies Infineon-FD650R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f1ca3754bb7 Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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CY8C6117FDI-F02T CY8C6117FDI-F02T Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97 Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C624ALQI-S2D02 CY8C624ALQI-S2D02 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1 Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
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CYUSB3017-BZXIT CYUSB3017-BZXIT Infineon Technologies Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
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IRF7476TRPBF IRF7476TRPBF Infineon Technologies irf7476pbf.pdf?fileId=5546d462533600a4015355ff67701c26 Description: MOSFET N-CH 12V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 6 V
Produkt ist nicht verfügbar
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CY7C1440KV25-250BZXI CY7C1440KV25-250BZXI Infineon Technologies Infineon-CY7C1440KV25_36-Mbit_(1_M_36)_Pipelined_Sync_SRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece9d11491f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412AV18-200BZC CY7C1412AV18-200BZC Infineon Technologies CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1415BV18-200BZXC CY7C1415BV18-200BZXC Infineon Technologies CY7C1411%2C13%2C15%2C26BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412BV18-167BZC CY7C1412BV18-167BZC Infineon Technologies CY7C141%282%2C4%29BV18_RevE.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGM687U50E6327XUMA1 BGM687U50E6327XUMA1 Infineon Technologies Infineon-BGM687U50-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b47f3aa600338 Description: IC AMP 7XLNA BANK OUTPUT CROSS-S
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: 5G
Gain: 21dB
Current - Supply: 10mA
Supplier Device Package: PG-WF2BGA-50-1
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BGM687U50E6327XUMA1 BGM687U50E6327XUMA1 Infineon Technologies Infineon-BGM687U50-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b47f3aa600338 Description: IC AMP 7XLNA BANK OUTPUT CROSS-S
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: 5G
Gain: 21dB
Current - Supply: 10mA
Supplier Device Package: PG-WF2BGA-50-1
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TLD55421HIPOWEVALTOBO1 TLD55421HIPOWEVALTOBO1 Infineon Technologies Infineon-TLD5542-1HIPOW_EVAL-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901784c5c16613499 Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 5V ~ 24V
Voltage - Input: 7.5V ~ 35V
Current - Output / Channel: 25A
Utilized IC / Part: TLD5542-1
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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S70FS01GSAGBHB213 S70FS01GSAGBHB213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PSB 50505 E V1.3-G Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Supplier Device Package: PG-LBGA-256-1
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CYBL11573-56LQXI CYBL11573-56LQXI Infineon Technologies CYBL1xx7x_RevK_3-27-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CY15B204QN-40SXET CY15B204QN-40SXET Infineon Technologies Description: IC FRAM 4MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 512K x 8
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CY15B204QN-40SXE CY15B204QN-40SXE Infineon Technologies Description: IC FRAM 4MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 512K x 8
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IPDQ60T017S7XTMA1 IPDQ60T017S7XTMA1 Infineon Technologies IPDQ60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
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IPDQ60T017S7XTMA1 IPDQ60T017S7XTMA1 Infineon Technologies IPDQ60T017S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
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CYAT81688-100AS77KH CYAT81688-100AS77KH Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT81688-100AS71KH CYAT81688-100AS71KH Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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BTS70041EPRXUMA1 BTS70041EPRXUMA1 Infineon Technologies infineon-bts7004-1epp-datasheet-en.pdf Description: POWER SWITCH ICS - POWER DISTRIB
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 18V ~ 28V
Voltage - Supply (Vcc/Vdd): 18V ~ 28V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS70041EPRXUMA1 BTS70041EPRXUMA1 Infineon Technologies infineon-bts7004-1epp-datasheet-en.pdf Description: POWER SWITCH ICS - POWER DISTRIB
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 18V ~ 28V
Voltage - Supply (Vcc/Vdd): 18V ~ 28V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 159 Stücke:
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TC356TA64F300SABKXUMA2 TC356TA64F300SABKXUMA2 Infineon Technologies Infineon-TC35x_AB-step_DataSheet-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c82ce566401833cdf8d5f2dc7 Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
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XMC4104F64F64ABXQMA1 XMC4104F64F64ABXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
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XMC4104F64F128ABXQMA1 XMC4104F64F128ABXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
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S25HS512TFABHV013 S25HS512TFABHV013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY62128VLL-70ZC CY62128VLL-70ZC Infineon Technologies CY62128V.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256L-70PC CY62256L-70PC Infineon Technologies CY62256%20%28Jul05%29.pdf Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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AIMDQ75R016M1HXUMA1 AIMDQ75R016M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R016M1HXUMA1 AIMDQ75R016M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
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S25FL164K0XMFI003 S25FL164K0XMFI003 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRG4PC40S-E AUIRG4PC40S-E Infineon Technologies IRSDS19208-1.pdf?t.download=true&u=5oefqw Description: AUIRG4PC40 - AUTOMOTIVE IGBT DIS
Packaging: Bulk
auf Bestellung 292 Stücke:
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45+10.42 EUR
Mindestbestellmenge: 45
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S29GL256S90FHSS60 S29GL256S90FHSS60 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HS512TGABHB013 S26HS512TGABHB013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HS512TGABHB010 S26HS512TGABHB010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAMY20UP60B IRAMY20UP60B Infineon Technologies IRAMY20UP60B.pdf description Description: IC PWR HYBRID 600V 20A SIP3
Packaging: Bulk
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
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12+41.95 EUR
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IRAMY20UP60B IRAMY20UP60B Infineon Technologies IRAMY20UP60B.pdf description Description: IC PWR HYBRID 600V 20A SIP3
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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S29GL256S90TFI013 S29GL256S90TFI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128P11FFIS30
S29GL128P11FFIS30
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3004 Stücke:
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Anzahl Preis
3+8.75 EUR
10+7.98 EUR
25+7.83 EUR
40+7.77 EUR
136+6.97 EUR
272+6.95 EUR
544+6.51 EUR
952+6.24 EUR
Mindestbestellmenge: 3
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IAUCN04S6N009TATMA1 Infineon-IAUCN04S6N009T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbd5151ed1
IAUCN04S6N009TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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2000+1.44 EUR
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IAUCN04S6N009TATMA1 Infineon-IAUCN04S6N009T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbd5151ed1
IAUCN04S6N009TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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Anzahl Preis
4+4.66 EUR
10+3.03 EUR
100+2.1 EUR
500+1.76 EUR
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S29GL128S90FAI020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 90 ns
Memory Organization: 8M x 16
Produkt ist nicht verfügbar
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S26KL512SDABHA030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL512SDABHA030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S26KL512SDABHN020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL512SDABHN020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KL512SDABHN030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL512SDABHN030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KL512SDABHM030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL512SDABHM030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FS50R12W2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
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1+97.45 EUR
18+73.17 EUR
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FS50R06KE3BPSA1 Infineon-FS50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432ea305a10
FS50R06KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 70A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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Anzahl Preis
1+88.56 EUR
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T1960N22TOFVTXPSA1 Infineon-T1960N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712b08bb3c403f
T1960N22TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Bulk
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
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1+875.02 EUR
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IM240M6Y2BAKMA1 Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea
IM240M6Y2BAKMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 4A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: IGBT
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
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Anzahl Preis
36+13.43 EUR
Mindestbestellmenge: 36
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BCR 503 B6327 bcr503.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407759130305
BCR 503 B6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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DD171N18KHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N18KHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1800V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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1+250.32 EUR
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ND171N18KHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
ND171N18KHPSA2
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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Anzahl Preis
1+239.03 EUR
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DD171N18KHPSA1 Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N18KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1800V 171A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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Anzahl Preis
2+252.13 EUR
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DD171N18KHPSA1 Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N18KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1800V 171A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Produkt ist nicht verfügbar
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CY8C4126LTI-M475 Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4126LTI-M475
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB3015-BZXCT Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e
CYUSB3015-BZXCT
Hersteller: Infineon Technologies
Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB3015-BZXIT Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e
CYUSB3015-BZXIT
Hersteller: Infineon Technologies
Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4983CHTE6547HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FD650R17IE4BOSA2 Infineon-FD650R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f1ca3754bb7
FD650R17IE4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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CY8C6117FDI-F02T Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97
CY8C6117FDI-F02T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C624ALQI-S2D02 Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1
CY8C624ALQI-S2D02
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB3017-BZXIT Infineon-CYUSB3017-BZXC-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea38a7731e
CYUSB3017-BZXIT
Hersteller: Infineon Technologies
Description: USB SuperSpeed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM926EJ-S
Supplier Device Package: 121-FBGA (10x10)
Number of I/O: 7
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7476TRPBF irf7476pbf.pdf?fileId=5546d462533600a4015355ff67701c26
IRF7476TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 12V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 6 V
Produkt ist nicht verfügbar
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CY7C1440KV25-250BZXI Infineon-CY7C1440KV25_36-Mbit_(1_M_36)_Pipelined_Sync_SRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece9d11491f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1440KV25-250BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412AV18-200BZC CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf
CY7C1412AV18-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1415BV18-200BZXC CY7C1411%2C13%2C15%2C26BV18.pdf
CY7C1415BV18-200BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412BV18-167BZC CY7C141%282%2C4%29BV18_RevE.pdf
CY7C1412BV18-167BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGM687U50E6327XUMA1 Infineon-BGM687U50-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b47f3aa600338
BGM687U50E6327XUMA1
Hersteller: Infineon Technologies
Description: IC AMP 7XLNA BANK OUTPUT CROSS-S
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: 5G
Gain: 21dB
Current - Supply: 10mA
Supplier Device Package: PG-WF2BGA-50-1
Produkt ist nicht verfügbar
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BGM687U50E6327XUMA1 Infineon-BGM687U50-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b47f3aa600338
BGM687U50E6327XUMA1
Hersteller: Infineon Technologies
Description: IC AMP 7XLNA BANK OUTPUT CROSS-S
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Mounting Type: Surface Mount
Frequency: 600MHz ~ 2.7GHz
RF Type: 5G
Gain: 21dB
Current - Supply: 10mA
Supplier Device Package: PG-WF2BGA-50-1
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+3.31 EUR
25+3.13 EUR
100+2.88 EUR
250+2.73 EUR
500+2.62 EUR
1000+2.52 EUR
Mindestbestellmenge: 5
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TLD55421HIPOWEVALTOBO1 Infineon-TLD5542-1HIPOW_EVAL-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901784c5c16613499
TLD55421HIPOWEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 5V ~ 24V
Voltage - Input: 7.5V ~ 35V
Current - Output / Channel: 25A
Utilized IC / Part: TLD5542-1
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+300.03 EUR
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S70FS01GSAGBHB213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGBHB213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PSB 50505 E V1.3-G fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Supplier Device Package: PG-LBGA-256-1
Produkt ist nicht verfügbar
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CYBL11573-56LQXI CYBL1xx7x_RevK_3-27-17.pdf
CYBL11573-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.64 EUR
10+10.6 EUR
25+9.85 EUR
100+9.01 EUR
Mindestbestellmenge: 2
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CY15B204QN-40SXET
CY15B204QN-40SXET
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 512K x 8
Produkt ist nicht verfügbar
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CY15B204QN-40SXE
CY15B204QN-40SXE
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 512K x 8
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.46 EUR
10+25.45 EUR
25+24.66 EUR
94+23.51 EUR
188+22.93 EUR
282+22.59 EUR
564+22.01 EUR
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IPDQ60T017S7XTMA1 IPDQ60T017S7.pdf
IPDQ60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T017S7XTMA1 IPDQ60T017S7.pdf
IPDQ60T017S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.88mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.93 EUR
10+18.07 EUR
25+16.86 EUR
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CYAT81688-100AS77KH Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
CYAT81688-100AS77KH
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.4 EUR
10+39.11 EUR
25+37.35 EUR
90+33.39 EUR
270+31.86 EUR
450+30.32 EUR
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CYAT81688-100AS71KH Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
CYAT81688-100AS71KH
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS70041EPRXUMA1 infineon-bts7004-1epp-datasheet-en.pdf
BTS70041EPRXUMA1
Hersteller: Infineon Technologies
Description: POWER SWITCH ICS - POWER DISTRIB
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 18V ~ 28V
Voltage - Supply (Vcc/Vdd): 18V ~ 28V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS70041EPRXUMA1 infineon-bts7004-1epp-datasheet-en.pdf
BTS70041EPRXUMA1
Hersteller: Infineon Technologies
Description: POWER SWITCH ICS - POWER DISTRIB
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 18V ~ 28V
Voltage - Supply (Vcc/Vdd): 18V ~ 28V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.64 EUR
25+2.41 EUR
100+2.16 EUR
Mindestbestellmenge: 5
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TC356TA64F300SABKXUMA2 Infineon-TC35x_AB-step_DataSheet-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c82ce566401833cdf8d5f2dc7
TC356TA64F300SABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Produkt ist nicht verfügbar
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XMC4104F64F64ABXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4104F64F64ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4104F64F128ABXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4104F64F128ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TFABHV013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HS512TFABHV013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62128VLL-70ZC CY62128V.pdf
CY62128VLL-70ZC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256L-70PC CY62256%20%28Jul05%29.pdf
CY62256L-70PC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMDQ75R016M1HXUMA1 Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6
AIMDQ75R016M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R016M1HXUMA1 Infineon-AIMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b47eec87901f6
AIMDQ75R016M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.9 EUR
10+24.28 EUR
100+20.75 EUR
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S25FL164K0XMFI003 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XMFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRG4PC40S-E IRSDS19208-1.pdf?t.download=true&u=5oefqw
AUIRG4PC40S-E
Hersteller: Infineon Technologies
Description: AUIRG4PC40 - AUTOMOTIVE IGBT DIS
Packaging: Bulk
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+10.42 EUR
Mindestbestellmenge: 45
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S29GL256S90FHSS60 PdfFile_133368.pdf
S29GL256S90FHSS60
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HS512TGABHB013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHB013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HS512TGABHB010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAMY20UP60B description IRAMY20UP60B.pdf
IRAMY20UP60B
Hersteller: Infineon Technologies
Description: IC PWR HYBRID 600V 20A SIP3
Packaging: Bulk
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
auf Bestellung 4184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+41.95 EUR
Mindestbestellmenge: 12
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IRAMY20UP60B description IRAMY20UP60B.pdf
IRAMY20UP60B
Hersteller: Infineon Technologies
Description: IC PWR HYBRID 600V 20A SIP3
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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S29GL256S90TFI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S90TFI013
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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