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FP15R12W2T4BOMA1 FP15R12W2T4BOMA1 Infineon Technologies Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.17 EUR
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CY14B108L-ZS45XIT CY14B108L-ZS45XIT Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS11FAIV23 S29GL01GS11FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 60 Stücke:
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18+28.3 EUR
Mindestbestellmenge: 18
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FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
Produkt ist nicht verfügbar
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CY9AF142LAPMC1-G-MNE2 CY9AF142LAPMC1-G-MNE2 Infineon Technologies cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
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2+15.58 EUR
10+14.06 EUR
25+13.41 EUR
160+11.64 EUR
320+11.12 EUR
480+10.14 EUR
960+8.83 EUR
Mindestbestellmenge: 2
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IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.81 EUR
100+2.15 EUR
500+1.75 EUR
1000+1.71 EUR
Mindestbestellmenge: 6
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IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
10+3.06 EUR
100+2.43 EUR
Mindestbestellmenge: 5
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IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.52 EUR
10+3.46 EUR
100+2.65 EUR
Mindestbestellmenge: 4
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IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.99 EUR
Mindestbestellmenge: 2000
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IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2032 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
10+3.79 EUR
100+2.96 EUR
500+2.42 EUR
1000+2.34 EUR
Mindestbestellmenge: 4
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IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212 Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.28 EUR
Mindestbestellmenge: 2000
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IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212 Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3177 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.53 EUR
10+4.28 EUR
100+3.2 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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KITA2GTC3975VTRBSTOBO1 KITA2GTC3975VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
auf Bestellung 3 Stücke:
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1+3316.83 EUR
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FS100R17KE3BOSA1 FS100R17KE3BOSA1 Infineon Technologies Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44 Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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IFS200B12N3E4B37BPSA1 Infineon Technologies Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825 Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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IRGP4063-EPBF IRGP4063-EPBF Infineon Technologies IRSDS11858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
77+6.1 EUR
Mindestbestellmenge: 77
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S25FL128LAGBHM023 S25FL128LAGBHM023 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IR3826AMTRPBFAUMA1 IR3826AMTRPBFAUMA1 Infineon Technologies Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348 Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
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ICE5QR2270AZXKLA1 ICE5QR2270AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
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REF5QR0680BG40W1TOBO1 REF5QR0680BG40W1TOBO1 Infineon Technologies Infineon-Engineering_Report_Reference_Board_REF_5QR0680BG_40W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0669c25280d Description: EVAL BOARD FOR ICE5QR0680BG
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Contents: Board(s)
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Isolated Outputs
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TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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CYBL10563-56LQXIT CYBL10563-56LQXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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SPIDERPLUSMBEVALTOBO1 Infineon Technologies Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
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S29GL256S10FHB020 S29GL256S10FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
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MB95F572KPF-G-SNE2 MB95F572KPF-G-SNE2 Infineon Technologies MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
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MB95F574KNPF-G-SNE2 MB95F574KNPF-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
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MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
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MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
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MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
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MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
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MB9BF366RPMC-G-JNE2 MB9BF366RPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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TLE8201RAUMA1 TLE8201RAUMA1 Infineon Technologies TLE_8201R.pdf Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
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CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62148GN30-45ZSXI CY62148GN30-45ZSXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1361KVE33-133AXM CY7C1361KVE33-133AXM Infineon Technologies Infineon-CY7C1361KVE33-133AXM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2758f68f2 Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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DD700N22KXPSA1 Infineon Technologies Infineon-DD700N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146668db98460e3 Description: DIODE MOD 2200V 700A BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 700A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
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IMBG120R022M2HXTMA1 IMBG120R022M2HXTMA1 Infineon Technologies infineon-imbg120r022m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 87A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
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IMBG120R022M2HXTMA1 IMBG120R022M2HXTMA1 Infineon Technologies infineon-imbg120r022m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 87A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.69 EUR
10+15.98 EUR
100+14.46 EUR
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CYAT817AZA88-5B002 CYAT817AZA88-5B002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4024AZI-S403T CY8C4024AZI-S403T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4024AZI-S403T CY8C4024AZI-S403T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1376 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.69 EUR
25+2.45 EUR
100+2.19 EUR
250+2.07 EUR
500+1.99 EUR
Mindestbestellmenge: 5
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CY8C4024AZQ-S413 CY8C4024AZQ-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB80N08S406ATMA1 IPB80N08S406ATMA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
231+2.01 EUR
Mindestbestellmenge: 231
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CY7C1051H30-10ZSXE Infineon Technologies Description: ASYNC
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
Produkt ist nicht verfügbar
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IRGP4266D-EPBF IRGP4266D-EPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 650V 140A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
Produkt ist nicht verfügbar
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IRFH7188TRPBF IRFH7188TRPBF Infineon Technologies IRFH7188PbF.pdf Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH7188TRPBF IRFH7188TRPBF Infineon Technologies IRFH7188PbF.pdf Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Produkt ist nicht verfügbar
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IPW60R145CFD7XKSA1 IPW60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET N-CH 600V 16A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 99993 Stücke:
Lieferzeit 10-14 Tag (e)
170+2.66 EUR
Mindestbestellmenge: 170
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IPW60R037CM8XKSA1 IPW60R037CM8XKSA1 Infineon Technologies Infineon-IPW60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9ccba9ab2b49 Description: IPW60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Produkt ist nicht verfügbar
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FP15R12W2T4BOMA1 Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e
FP15R12W2T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.17 EUR
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CY14B108L-ZS45XIT Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108L-ZS45XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS11FAIV23 S29GL-S_PbPkg.pdf
S29GL01GS11FAIV23
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+28.3 EUR
Mindestbestellmenge: 18
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FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
Produkt ist nicht verfügbar
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CY9AF142LAPMC1-G-MNE2 cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller
CY9AF142LAPMC1-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.58 EUR
10+14.06 EUR
25+13.41 EUR
160+11.64 EUR
320+11.12 EUR
480+10.14 EUR
960+8.83 EUR
Mindestbestellmenge: 2
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IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.81 EUR
100+2.15 EUR
500+1.75 EUR
1000+1.71 EUR
Mindestbestellmenge: 6
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IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.91 EUR
10+3.06 EUR
100+2.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+3.46 EUR
100+2.65 EUR
Mindestbestellmenge: 4
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IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.99 EUR
Mindestbestellmenge: 2000
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IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2032 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.79 EUR
100+2.96 EUR
500+2.42 EUR
1000+2.34 EUR
Mindestbestellmenge: 4
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IAUAN04S7N004AUMA1 Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212
IAUAN04S7N004AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.28 EUR
Mindestbestellmenge: 2000
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IAUAN04S7N004AUMA1 Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212
IAUAN04S7N004AUMA1
Hersteller: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
10+4.28 EUR
100+3.2 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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KITA2GTC3975VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBSTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3316.83 EUR
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FS100R17KE3BOSA1 Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44
FS100R17KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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IFS200B12N3E4B37BPSA1 Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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IRGP4063-EPBF IRSDS11858-1.pdf?t.download=true&u=5oefqw
IRGP4063-EPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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BTS282ZE3230AKSA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3230AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.1 EUR
Mindestbestellmenge: 77
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S25FL128LAGBHM023 INFN-S-A0017271261-1.pdf
S25FL128LAGBHM023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IR3826AMTRPBFAUMA1 Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348
IR3826AMTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 IPx60R330P6.pdf
IPA60R330P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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ICE5QR2270AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR2270AZXKLA1
Hersteller: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
228+2.16 EUR
Mindestbestellmenge: 228
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REF5QR0680BG40W1TOBO1 Infineon-Engineering_Report_Reference_Board_REF_5QR0680BG_40W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0669c25280d
REF5QR0680BG40W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5QR0680BG
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Contents: Board(s)
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Isolated Outputs
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.07 EUR
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TLE49SRS8XUMA1
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRS8XUMA1
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+8.19 EUR
25+7.58 EUR
100+6.55 EUR
500+6.14 EUR
1000+5.74 EUR
Mindestbestellmenge: 2
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CYBL10563-56LQXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-56LQXIT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPIDERPLUSMBEVALTOBO1
Hersteller: Infineon Technologies
Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
Produkt ist nicht verfügbar
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S29GL256S10FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10FHB020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
auf Bestellung 4721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
14+1.27 EUR
100+0.99 EUR
500+0.84 EUR
1000+0.68 EUR
2000+0.64 EUR
Mindestbestellmenge: 12
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MB95F572KPF-G-SNE2 MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf
MB95F572KPF-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F574KNPF-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F574KNPF-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
Mindestbestellmenge: 11
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MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
auf Bestellung 524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
Mindestbestellmenge: 10
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MB9BF366RPMC-G-JNE2 download
MB9BF366RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+10.85 EUR
Mindestbestellmenge: 45
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TLE8201RAUMA1 TLE_8201R.pdf
TLE8201RAUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.22 EUR
Mindestbestellmenge: 1000
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+6.15 EUR
25+5.97 EUR
50+5.83 EUR
100+5.69 EUR
250+5.51 EUR
500+5.38 EUR
Mindestbestellmenge: 3
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
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CY62148GN30-45ZSXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1361KVE33-133AXM Infineon-CY7C1361KVE33-133AXM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2758f68f2
CY7C1361KVE33-133AXM
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD700N22KXPSA1 Infineon-DD700N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146668db98460e3
Hersteller: Infineon Technologies
Description: DIODE MOD 2200V 700A BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 700A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Produkt ist nicht verfügbar
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IMBG120R022M2HXTMA1 infineon-imbg120r022m2h-datasheet-en.pdf
IMBG120R022M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 87A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R022M2HXTMA1 infineon-imbg120r022m2h-datasheet-en.pdf
IMBG120R022M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 87A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.69 EUR
10+15.98 EUR
100+14.46 EUR
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CYAT817AZA88-5B002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZA88-5B002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4024AZI-S403T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4024AZI-S403T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4024AZI-S403T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4024AZI-S403T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.69 EUR
25+2.45 EUR
100+2.19 EUR
250+2.07 EUR
500+1.99 EUR
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CY8C4024AZQ-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
CY8C4024AZQ-S413
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB80N08S406ATMA1 IPx80N08S4-06.pdf
IPB80N08S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
231+2.01 EUR
Mindestbestellmenge: 231
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CY7C1051H30-10ZSXE
Hersteller: Infineon Technologies
Description: ASYNC
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 16
Produkt ist nicht verfügbar
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IRGP4266D-EPBF fundamentals-of-power-semiconductors
IRGP4266D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 650V 140A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
Produkt ist nicht verfügbar
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IRFH7188TRPBF IRFH7188PbF.pdf
IRFH7188TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH7188TRPBF IRFH7188PbF.pdf
IRFH7188TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Produkt ist nicht verfügbar
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IPW60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R145CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+2.66 EUR
Mindestbestellmenge: 170
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IPW60R037CM8XKSA1 Infineon-IPW60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9ccba9ab2b49
IPW60R037CM8XKSA1
Hersteller: Infineon Technologies
Description: IPW60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
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