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CY62157EV30LL-55ZSXET CY62157EV30LL-55ZSXET Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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BTT60801ERLXUMA1 BTT60801ERLXUMA1 Infineon Technologies Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3 Description: IC POWER SW PG-TDSO-14-11
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60801ERLXUMA1 BTT60801ERLXUMA1 Infineon Technologies Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3 Description: IC POWER SW PG-TDSO-14-11
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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10+3.44 EUR
25+3.14 EUR
100+2.81 EUR
250+2.65 EUR
500+2.58 EUR
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BTT60351ERLXUMA1 BTT60351ERLXUMA1 Infineon Technologies Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0 Description: IC RLY/SOLENOID DRVR TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60351ERLXUMA1 BTT60351ERLXUMA1 Infineon Technologies Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0 Description: IC RLY/SOLENOID DRVR TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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10+4.56 EUR
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100+3.76 EUR
250+3.56 EUR
500+3.51 EUR
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BTT60502EKAXUMA1 BTT60502EKAXUMA1 Infineon Technologies BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1TXTMA1 Infineon Technologies AIMCQ120R060M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1TXTMA1 Infineon Technologies AIMCQ120R060M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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100+11.41 EUR
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IAUMN04S7N005GAUMA1 IAUMN04S7N005GAUMA1 Infineon Technologies Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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CY8C4547AZQ-S453 CY8C4547AZQ-S453 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S483 CY8C4548AZI-S483 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S485 CY8C4548AZI-S485 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
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CY8C4547AZI-S463 CY8C4547AZI-S463 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C26233-24PXI CY8C26233-24PXI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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TDA386410000AUMA1 TDA386410000AUMA1 Infineon Technologies Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409 Description: IFX POL
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
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TDA386410000AUMA1 TDA386410000AUMA1 Infineon Technologies Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409 Description: IFX POL
Packaging: Tray
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
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TDA38641A0000AUMA1 Infineon Technologies Description: IFX POL
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
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CY7C1168KV18-400BZXC CY7C1168KV18-400BZXC Infineon Technologies Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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ISP670P06NMAXTSA1 ISP670P06NMAXTSA1 Infineon Technologies Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30 Description: ISP670P06NMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISP670P06NMAXTSA1 ISP670P06NMAXTSA1 Infineon Technologies Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30 Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
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10+2.78 EUR
50+2.12 EUR
100+1.89 EUR
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S29GL256P11TFIV23 S29GL256P11TFIV23 Infineon Technologies infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BC846UE6727HTSA1 BC846UE6727HTSA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115423ee6b71751 Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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65DN06B02ELEMXPSA1 65DN06B02ELEMXPSA1 Infineon Technologies Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391 Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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CY8C4146AZS-S275 CY8C4146AZS-S275 Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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640+7.16 EUR
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MB91F577BPMC-GSK5E2 MB91F577BPMC-GSK5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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MB91F577BHSPMC-GSK5E1 MB91F577BHSPMC-GSK5E1 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 380 Stücke:
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2+12.59 EUR
10+9.69 EUR
25+8.96 EUR
100+8.16 EUR
250+7.78 EUR
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 423 Stücke:
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100+13.01 EUR
250+12.44 EUR
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IMBG65R026M2H IMBG65R026M2H Infineon Technologies Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0 Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMBG65R010M2H IMBG65R010M2H Infineon Technologies Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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10+33.52 EUR
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FS200R12N3T4RB81BPSA1 FS200R12N3T4RB81BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
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10+260.61 EUR
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F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 15 Stücke:
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2+475.86 EUR
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F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
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F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
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IRFS4127PBF IRFS4127PBF Infineon Technologies irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 description Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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BCR133WH6327XTSA1 BCR133WH6327XTSA1 Infineon Technologies bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BCR135WH6327XTSA1 BCR135WH6327XTSA1 Infineon Technologies bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IDWD30G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies Infineon-IPT60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c94b60a2aca Description: IPT60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies Infineon-IPT60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c94b60a2aca Description: IPT60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 1532 Stücke:
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10+3.15 EUR
100+2.17 EUR
500+1.76 EUR
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CY7C1470V33-200BZI CY7C1470V33-200BZI Infineon Technologies Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-167AXC CY7C1470BV25-167AXC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IRFS4115TRL7PP IRFS4115TRL7PP Infineon Technologies irfs4115-7ppbf.pdf?fileId=5546d462533600a401535636dd31218d Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
auf Bestellung 2289 Stücke:
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IDP08E65D2XKSA1 IDP08E65D2XKSA1 Infineon Technologies DS_IDP08E65D2_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6944ca9a05e0 Description: DIODE STANDARD 650V 8A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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1EDF5673FXUMA1 1EDF5673FXUMA1 Infineon Technologies 1EDF5673FXUMA1.pdf Description: DGT ISO 1.5KV 1CH GT DVR DSO16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
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CYRF69313-40LFXC CYRF69313-40LFXC Infineon Technologies CYRF69313_Mar2014.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
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IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies IMW65R060M2H_2_1.pdf Description: IMW65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 409 Stücke:
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IMW65R033M2HXKSA1 IMW65R033M2HXKSA1 Infineon Technologies Infineon-IMW65R033M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b64fc70052c Description: IMW65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 388 Stücke:
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IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies IMW65R010M2HXKSA1.pdf Description: IMW65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 180 Stücke:
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CY7C25632KV18-400BZC CY7C25632KV18-400BZC Infineon Technologies Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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IGLR70R140D2SXUMA1 IGLR70R140D2SXUMA1 Infineon Technologies infineon-iglr70r140d2s-datasheet-en.pdf Description: GANFET N-CH 700V 13A 8TDFN
Packaging: Tape & Reel (TR)
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IGLR70R140D2SXUMA1 IGLR70R140D2SXUMA1 Infineon Technologies infineon-iglr70r140d2s-datasheet-en.pdf Description: GANFET N-CH 700V 13A 8TDFN
Packaging: Cut Tape (CT)
auf Bestellung 4258 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+3.68 EUR
50+2.82 EUR
100+2.53 EUR
500+2.05 EUR
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IAUZN04S7N013ATMA2 IAUZN04S7N013ATMA2 Infineon Technologies Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
auf Bestellung 130 Stücke:
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3+9.23 EUR
10+6.09 EUR
50+4.75 EUR
100+4.32 EUR
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
auf Bestellung 2000 Stücke:
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2000+16.97 EUR
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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1+33.7 EUR
10+23.9 EUR
50+20.78 EUR
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CY62157EV30LL-55ZSXET Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-55ZSXET
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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BTT60801ERLXUMA1 Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3
BTT60801ERLXUMA1
Hersteller: Infineon Technologies
Description: IC POWER SW PG-TDSO-14-11
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTT60801ERLXUMA1 Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3
BTT60801ERLXUMA1
Hersteller: Infineon Technologies
Description: IC POWER SW PG-TDSO-14-11
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.63 EUR
10+3.44 EUR
25+3.14 EUR
100+2.81 EUR
250+2.65 EUR
500+2.58 EUR
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BTT60351ERLXUMA1 Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0
BTT60351ERLXUMA1
Hersteller: Infineon Technologies
Description: IC RLY/SOLENOID DRVR TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTT60351ERLXUMA1 Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0
BTT60351ERLXUMA1
Hersteller: Infineon Technologies
Description: IC RLY/SOLENOID DRVR TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1815 Stücke:
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AnzahlPrivatkunde
4+6.07 EUR
10+4.56 EUR
25+4.18 EUR
100+3.76 EUR
250+3.56 EUR
500+3.51 EUR
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BTT60502EKAXUMA1 BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec
BTT60502EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1T_v1.10_en.pdf
AIMCQ120R060M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1T_v1.10_en.pdf
AIMCQ120R060M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 523 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.53 EUR
10+14.84 EUR
50+11.97 EUR
100+11.41 EUR
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IAUMN04S7N005GAUMA1 Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634
IAUMN04S7N005GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4547AZQ-S453 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4547AZQ-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4548AZI-S483 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4548AZI-S483
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4548AZI-S485 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4548AZI-S485
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4547AZI-S463 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4547AZI-S463
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C26233-24PXI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26233-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA386410000AUMA1 Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409
TDA386410000AUMA1
Hersteller: Infineon Technologies
Description: IFX POL
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.79 EUR
10+6.69 EUR
25+6.16 EUR
100+5.58 EUR
250+5.31 EUR
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TDA386410000AUMA1 Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409
TDA386410000AUMA1
Hersteller: Infineon Technologies
Description: IFX POL
Packaging: Tray
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+4.76 EUR
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TDA38641A0000AUMA1
Hersteller: Infineon Technologies
Description: IFX POL
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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CY7C1168KV18-400BZXC Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign=
CY7C1168KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISP670P06NMAXTSA1 Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30
ISP670P06NMAXTSA1
Hersteller: Infineon Technologies
Description: ISP670P06NMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISP670P06NMAXTSA1 Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30
ISP670P06NMAXTSA1
Hersteller: Infineon Technologies
Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+2.78 EUR
50+2.12 EUR
100+1.89 EUR
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S29GL256P11TFIV23 infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp
S29GL256P11TFIV23
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BC846UE6727HTSA1 bc846s_bc846u_bc847s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115423ee6b71751
BC846UE6727HTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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65DN06B02ELEMXPSA1 Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391
65DN06B02ELEMXPSA1
Hersteller: Infineon Technologies
Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AnzahlPrivatkunde
1+1016.64 EUR
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CY8C4146AZS-S275 Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4146AZS-S275
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.04 EUR
10+9.27 EUR
25+8.57 EUR
160+7.62 EUR
320+7.37 EUR
640+7.16 EUR
1120+7.02 EUR
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MB91F577BPMC-GSK5E2
MB91F577BPMC-GSK5E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
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MB91F577BHSPMC-GSK5E1 download
MB91F577BHSPMC-GSK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Hersteller: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Hersteller: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.59 EUR
10+9.69 EUR
25+8.96 EUR
100+8.16 EUR
250+7.78 EUR
Mindestbestellmenge: 2 Stücke
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IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Hersteller: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Hersteller: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.59 EUR
10+15.27 EUR
25+14.2 EUR
100+13.01 EUR
250+12.44 EUR
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IMBG65R026M2H Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0
IMBG65R026M2H
Hersteller: Infineon Technologies
Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R010M2H Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b
IMBG65R010M2H
Hersteller: Infineon Technologies
Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.86 EUR
10+33.52 EUR
25+31.44 EUR
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FS200R12N3T4RB81BPSA1
FS200R12N3T4RB81BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+293.38 EUR
10+260.61 EUR
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F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+475.86 EUR
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F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Produkt ist nicht verfügbar
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F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+475.86 EUR
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F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
Produkt ist nicht verfügbar
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IRFS4127PBF description irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
IRFS4127PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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BCR133WH6327XTSA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
BCR133WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
828+0.71 EUR
Mindestbestellmenge: 828 Stücke
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BCR135WH6327XTSA1 bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289
BCR135WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 7296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4103+0.14 EUR
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IDWD30G120C5XKSA2
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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IPT60R180CM8XTMA1 Infineon-IPT60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c94b60a2aca
IPT60R180CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R180CM8XTMA1 Infineon-IPT60R180CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c94b60a2aca
IPT60R180CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 1532 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.15 EUR
100+2.17 EUR
500+1.76 EUR
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CY7C1470V33-200BZI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
CY7C1470V33-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1470BV25-167AXC download
CY7C1470BV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS4115TRL7PP irfs4115-7ppbf.pdf?fileId=5546d462533600a401535636dd31218d
IRFS4115TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
auf Bestellung 2289 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
121+4.83 EUR
Mindestbestellmenge: 121 Stücke
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IDP08E65D2XKSA1 DS_IDP08E65D2_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6944ca9a05e0
IDP08E65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
238+2.26 EUR
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1EDF5673FXUMA1 1EDF5673FXUMA1.pdf
1EDF5673FXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR DSO16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
auf Bestellung 7372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
170+3.55 EUR
Mindestbestellmenge: 170 Stücke
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CYRF69313-40LFXC CYRF69313_Mar2014.pdf
CYRF69313-40LFXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMW65R060M2HXKSA1 IMW65R060M2H_2_1.pdf
IMW65R060M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.17 EUR
30+9.44 EUR
60+8.63 EUR
120+7.95 EUR
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IMW65R033M2HXKSA1 Infineon-IMW65R033M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b64fc70052c
IMW65R033M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.03 EUR
30+14.43 EUR
60+13.3 EUR
120+12.34 EUR
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IMW65R010M2HXKSA1 IMW65R010M2HXKSA1.pdf
IMW65R010M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+46.21 EUR
30+29.51 EUR
60+27.52 EUR
120+25.86 EUR
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CY7C25632KV18-400BZC Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra
CY7C25632KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 136 Stücke
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IGLR70R140D2SXUMA1 infineon-iglr70r140d2s-datasheet-en.pdf
IGLR70R140D2SXUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 700V 13A 8TDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGLR70R140D2SXUMA1 infineon-iglr70r140d2s-datasheet-en.pdf
IGLR70R140D2SXUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 700V 13A 8TDFN
Packaging: Cut Tape (CT)
auf Bestellung 4258 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.7 EUR
10+3.68 EUR
50+2.82 EUR
100+2.53 EUR
500+2.05 EUR
Mindestbestellmenge: 4 Stücke
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IAUZN04S7N013ATMA2 Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0
IAUZN04S7N013ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.23 EUR
10+6.09 EUR
50+4.75 EUR
100+4.32 EUR
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+16.97 EUR
Mindestbestellmenge: 2000 Stücke
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+33.7 EUR
10+23.9 EUR
50+20.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH