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CY8C6245LQI-S3D62 CY8C6245LQI-S3D62 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X5-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8cb86719c Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS810C1EJV33XUMA1 TLS810C1EJV33XUMA1 Infineon Technologies Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258 Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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CY14B108L-ZS20XIT CY14B108L-ZS20XIT Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF124LPMC1-GNE2 CY9BF124LPMC1-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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CY9BF124LPMC-GNE2 CY9BF124LPMC-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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AN2136SC AN2136SC Infineon Technologies AN2131SC%2CQC%2CAN2135SC%2C36SC.pdf Description: IC MCU 8051 8K RAM 24MHZ 44QFP
Packaging: Bag
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: AN213x
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 44-PQFP
Number of I/O: 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061GN30-10BV1XIT CY7C1061GN30-10BV1XIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP4409 AUIRFP4409 Infineon Technologies auirfp4409.pdf?fileId=5546d462533600a4015355b1d03c1456 Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY14U256LA-BA35XIT CY14U256LA-BA35XIT Infineon Technologies Infineon-CY14U256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0a9c33546 Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY14V256LA-BA35XIT CY14V256LA-BA35XIT Infineon Technologies Infineon-CY14V256LA_256-Kbit_(32_K_x_8)_nvSRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec03c9034c2 Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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FF3MR12KM1HPHPSA1 FF3MR12KM1HPHPSA1 Infineon Technologies Infineon-FF3MR12KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60857340d3e Description: MOSFET 2N-CH 1200V 220A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
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FP75R12KT4B15BOSA1 FP75R12KT4B15BOSA1 Infineon Technologies Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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2EDF8275FXUMA1 2EDF8275FXUMA1 Infineon Technologies Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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2EDF8275FXUMA1 2EDF8275FXUMA1 Infineon Technologies Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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10+4.77 EUR
25+4.51 EUR
100+3.91 EUR
250+3.71 EUR
500+3.33 EUR
1000+2.81 EUR
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IDWD20E65E7XKSA1 Infineon Technologies Infineon-IDWD20E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59c6e758e7 Description: HOME APPLIANCES 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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FF3MR20KM1HPHPSA1 Infineon Technologies Infineon-FF3MR20KM1HP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a7d35a380b Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
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IGI60L5050A1MXUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 1A
Packaging: Tape & Reel (TR)
Interface: PWM
Output Configuration: Half Bridge
Rds On (Typ): 500mOhm
Applications: General Purpose
Current - Output / Channel: 1A
Technology: NMOS
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
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IRF6617TRPBF IRF6617TRPBF Infineon Technologies irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17 Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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AUIRF2903Z AUIRF2903Z Infineon Technologies auirf2903z.pdf?fileId=5546d462533600a4015355ac2af61392 Description: MOSFET N-CH 30V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
Qualification: AEC-Q101
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TLI49632MXTMA1 Infineon Technologies Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPD95R450PFD7ATMA1 IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
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IPD95R450PFD7ATMA1 IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
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10+3.45 EUR
100+2.40 EUR
500+1.95 EUR
1000+1.80 EUR
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IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
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IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRGB4615DPBF IRGB4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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AUIRL1404STRL AUIRL1404STRL Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CYPD6227-96BZXI CYPD6227-96BZXI Infineon Technologies Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
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IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
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IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
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CY9AF141LAPMC1-GNE2 CY9AF141LAPMC1-GNE2 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
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BAV70UE6359HTMA1 BAV70UE6359HTMA1 Infineon Technologies bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
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CY7C1360S-200BGCT CY7C1360S-200BGCT Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1360S-200AXI CY7C1360S-200AXI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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S29GL512S11TFB023 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
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IDWD80G200C5XKSA1 IDWD80G200C5XKSA1 Infineon Technologies IDWD80G200C5XKSA1.pdf Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
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CY241V8ASXC-16 CY241V8ASXC-16 Infineon Technologies Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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S26KL128SDABHI020 S26KL128SDABHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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FZ1000R65KE4NPSA1 FZ1000R65KE4NPSA1 Infineon Technologies Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
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CY7C1061GE-10BVXIT CY7C1061GE-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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IPSA70R750P7SAKMA1 IPSA70R750P7SAKMA1 Infineon Technologies Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
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1019+0.49 EUR
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CY3272 CY3272 Infineon Technologies Description: KIT EVAL POWERLINE HIGH VOLT
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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CY3273 CY3273 Infineon Technologies CY3273.pdf Description: KIT EVAL POWERLINE LOW VOLT
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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IR3565BMTRPBF IR3565BMTRPBF Infineon Technologies IR3565B.pdf Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
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AIMDQ75R008M1HXUMA1 AIMDQ75R008M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b Description: AUTOMOTIVE_SICMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R008M1HXUMA1 AIMDQ75R008M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b Description: AUTOMOTIVE_SICMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
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TLD55012ADBPREREFTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5501-2
Packaging: Bulk
Features: Dimmable
Voltage - Output: 0V ~ 5V
Voltage - Input: 8V ~ 26V
Current - Output / Channel: 12A, 12A
Utilized IC / Part: TLD5501-2
Supplied Contents: Board(s)
Outputs and Type: 2, Non-Isolated
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CYPD7291-68LDXST Infineon Technologies Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL3806PBF IRFSL3806PBF Infineon Technologies irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Description: MOSFET N-CH 60V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
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TLD5097ELXUMA1 TLD5097ELXUMA1 Infineon Technologies Infineon-TLD5097EL-DS-v01_00-EN.pdf?fileId=db3a3043442f820901443eb1f6925bc8 Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Grade: Automotive
Produkt ist nicht verfügbar
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BSM200GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 325 Stücke:
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BSM200GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GD60DLCBOSA1 Infineon Technologies Description: IGBT MOD 600V 226A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 226 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 10 Stücke:
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10+37.82 EUR
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BSM200GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 400A 1660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
Produkt ist nicht verfügbar
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BG 5130R E6327 BG 5130R E6327 Infineon Technologies BG5130R.pdf Description: RF MOSFET 3V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 3 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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EVALPMG1S3DUALDRPTOBO1 EVALPMG1S3DUALDRPTOBO1 Infineon Technologies Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: EVALPMG1S3DUALDRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S3
Supplied Contents: Board(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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D3501N36TXPSA1 D3501N36TXPSA1 Infineon Technologies Infineon-D3501N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b430c33f51d8 Description: DIODE GEN PURP 4870A D12035K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4870A
Supplier Device Package: BG-D12035K-1
Operating Temperature - Junction: -40°C ~ 160°C
Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
Produkt ist nicht verfügbar
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CY8C6245LQI-S3D62 Infineon-PSOC_6_MCU_CY8C62X5-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8cb86719c
CY8C6245LQI-S3D62
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS810C1EJV33XUMA1 Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258
TLS810C1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 15490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
523+0.92 EUR
Mindestbestellmenge: 523
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CY14B108L-ZS20XIT Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108L-ZS20XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF124LPMC1-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124LPMC1-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF124LPMC-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124LPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AN2136SC AN2131SC%2CQC%2CAN2135SC%2C36SC.pdf
AN2136SC
Hersteller: Infineon Technologies
Description: IC MCU 8051 8K RAM 24MHZ 44QFP
Packaging: Bag
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: AN213x
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 44-PQFP
Number of I/O: 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061GN30-10BV1XIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BV1XIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP4409 auirfp4409.pdf?fileId=5546d462533600a4015355b1d03c1456
AUIRFP4409
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY14U256LA-BA35XIT Infineon-CY14U256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0a9c33546
CY14U256LA-BA35XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14V256LA-BA35XIT Infineon-CY14V256LA_256-Kbit_(32_K_x_8)_nvSRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec03c9034c2
CY14V256LA-BA35XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF3MR12KM1HPHPSA1 Infineon-FF3MR12KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60857340d3e
FF3MR12KM1HPHPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 220A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
auf Bestellung 13 Stücke:
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Anzahl Preis
1+568.52 EUR
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FP75R12KT4B15BOSA1 Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da
FP75R12KT4B15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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Anzahl Preis
3+164.88 EUR
Mindestbestellmenge: 3
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2EDF8275FXUMA1 Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d
2EDF8275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF8275FXUMA1 Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d
2EDF8275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 2494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+4.77 EUR
25+4.51 EUR
100+3.91 EUR
250+3.71 EUR
500+3.33 EUR
1000+2.81 EUR
Mindestbestellmenge: 4
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IDWD20E65E7XKSA1 Infineon-IDWD20E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59c6e758e7
Hersteller: Infineon Technologies
Description: HOME APPLIANCES 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+3.35 EUR
Mindestbestellmenge: 5
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FF3MR20KM1HPHPSA1 Infineon-FF3MR20KM1HP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a7d35a380b
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
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Anzahl Preis
1+1256.46 EUR
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IGI60L5050A1MXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1A
Packaging: Tape & Reel (TR)
Interface: PWM
Output Configuration: Half Bridge
Rds On (Typ): 500mOhm
Applications: General Purpose
Current - Output / Channel: 1A
Technology: NMOS
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
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IRF6617TRPBF irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17
IRF6617TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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AUIRF2903Z auirf2903z.pdf?fileId=5546d462533600a4015355ac2af61392
AUIRF2903Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLI49632MXTMA1 Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd
Hersteller: Infineon Technologies
Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
IPD95R450PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Produkt ist nicht verfügbar
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IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
IPD95R450PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
auf Bestellung 2456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
10+3.45 EUR
100+2.40 EUR
500+1.95 EUR
1000+1.80 EUR
Mindestbestellmenge: 4
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IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Hersteller: Infineon Technologies
Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
247+2.00 EUR
Mindestbestellmenge: 247
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IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Hersteller: Infineon Technologies
Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRGB4615DPBF IRGx4615DPbF.pdf
IRGB4615DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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AUIRL1404STRL AUIRL1404S%2CL.pdf
AUIRL1404STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYPD6227-96BZXI Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be
CYPD6227-96BZXI
Hersteller: Infineon Technologies
Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R012M2HXTMA1 Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b
IMBG120R012M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R012M2HXTMA1 Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b
IMBG120R012M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.45 EUR
10+30.11 EUR
100+25.02 EUR
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CY9AF141LAPMC1-GNE2
CY9AF141LAPMC1-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN10S7N021ATMA1 Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a
IAUCN10S7N021ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN10S7N021ATMA1 Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a
IAUCN10S7N021ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+5.16 EUR
100+4.01 EUR
500+3.47 EUR
Mindestbestellmenge: 3
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BAV70UE6359HTMA1 bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d
BAV70UE6359HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
auf Bestellung 230000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.03 EUR
Mindestbestellmenge: 13172
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CY7C1360S-200BGCT
CY7C1360S-200BGCT
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1360S-200AXI
CY7C1360S-200AXI
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512S11TFB023 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Hersteller: Infineon Technologies
Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IDWD80G200C5XKSA1 IDWD80G200C5XKSA1.pdf
IDWD80G200C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.60 EUR
30+54.78 EUR
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CY241V8ASXC-16
CY241V8ASXC-16
Hersteller: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 26176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
198+2.49 EUR
Mindestbestellmenge: 198
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S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL128SDABHI020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.25 EUR
10+11.98 EUR
25+11.42 EUR
80+9.91 EUR
Mindestbestellmenge: 2
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FZ1000R65KE4NPSA1
FZ1000R65KE4NPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5504.10 EUR
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CY7C1061GE-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 1525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
5+8.98 EUR
10+8.61 EUR
25+8.17 EUR
50+7.86 EUR
100+7.59 EUR
500+7.03 EUR
1000+6.82 EUR
Mindestbestellmenge: 2
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IPSA70R750P7SAKMA1 Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b
IPSA70R750P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 2832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1019+0.49 EUR
Mindestbestellmenge: 1019
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CY3272
CY3272
Hersteller: Infineon Technologies
Description: KIT EVAL POWERLINE HIGH VOLT
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
Produkt ist nicht verfügbar
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CY3273 CY3273.pdf
CY3273
Hersteller: Infineon Technologies
Description: KIT EVAL POWERLINE LOW VOLT
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
Produkt ist nicht verfügbar
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IR3565BMTRPBF IR3565B.pdf
IR3565BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
auf Bestellung 11824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+6.18 EUR
Mindestbestellmenge: 82
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AIMDQ75R008M1HXUMA1 Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b
AIMDQ75R008M1HXUMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R008M1HXUMA1 Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b
AIMDQ75R008M1HXUMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.52 EUR
10+46.46 EUR
100+41.58 EUR
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TLD55012ADBPREREFTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5501-2
Packaging: Bulk
Features: Dimmable
Voltage - Output: 0V ~ 5V
Voltage - Input: 8V ~ 26V
Current - Output / Channel: 12A, 12A
Utilized IC / Part: TLD5501-2
Supplied Contents: Board(s)
Outputs and Type: 2, Non-Isolated
Produkt ist nicht verfügbar
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CYPD7291-68LDXST
Hersteller: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL3806PBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
IRFSL3806PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
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TLD5097ELXUMA1 Infineon-TLD5097EL-DS-v01_00-EN.pdf?fileId=db3a3043442f820901443eb1f6925bc8
TLD5097ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Grade: Automotive
Produkt ist nicht verfügbar
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BSM200GA120DLCSHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+346.86 EUR
Mindestbestellmenge: 2
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BSM200GA120DLCSHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GD60DLCBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 226A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 226 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+37.82 EUR
Mindestbestellmenge: 10
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BSM200GB170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 400A 1660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
Produkt ist nicht verfügbar
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BG 5130R E6327 BG5130R.pdf
BG 5130R E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 3V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 3 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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EVALPMG1S3DUALDRPTOBO1 Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
EVALPMG1S3DUALDRPTOBO1
Hersteller: Infineon Technologies
Description: EVALPMG1S3DUALDRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S3
Supplied Contents: Board(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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D3501N36TXPSA1 Infineon-D3501N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b430c33f51d8
D3501N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4870A D12035K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4870A
Supplier Device Package: BG-D12035K-1
Operating Temperature - Junction: -40°C ~ 160°C
Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
Produkt ist nicht verfügbar
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