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AIMBG75R020M1HXTMA1 AIMBG75R020M1HXTMA1 Infineon Technologies Infineon-AIMBG75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0262390273c Description: SICFET N-CH 750V 81A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R020M1HXTMA1 AIMBG75R020M1HXTMA1 Infineon Technologies Infineon-AIMBG75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0262390273c Description: SICFET N-CH 750V 81A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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CY22392FXC CY22392FXC Infineon Technologies download Description: IC CLKSYN FLSH PROG 3PLL 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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TLS830A4EPV50XUMA1 TLS830A4EPV50XUMA1 Infineon Technologies Infineon-TLS830A4EPV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f4ad2fe25137 Description: IC REG LIN 5V 300MA PG-TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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TLS830A4EPV50BOARDTOBO1 TLS830A4EPV50BOARDTOBO1 Infineon Technologies Infineon-Z8F80471187_TLS830A4EPV50_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019108462f217635 Description: EVAL BOARD FOR TLS830A4EPV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.2V ~ 40V
Current - Output: 300mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS830A4EPV50
Channels per IC: 1 - Single
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ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Infineon Technologies Infineon-ISC009N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938bedb04e1a04 Description: ISC009N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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ISC009N03LF2SATMA1 ISC009N03LF2SATMA1 Infineon Technologies Infineon-ISC009N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938bedb04e1a04 Description: ISC009N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Infineon Technologies Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Description: ISC015N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Produkt ist nicht verfügbar
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ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 Infineon Technologies Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff Description: ISC015N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
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IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Infineon Technologies infineon-iglr65r270d2-datasheet-en.pdf Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Infineon Technologies infineon-iglr65r270d2-datasheet-en.pdf Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IKWH70N67PR7XKSA1 IKWH70N67PR7XKSA1 Infineon Technologies IKWH70N67PR7XKSA1.pdf Description: IGBT TRENCH FS 670V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/246ns
Switching Energy: 1.58mJ (on), 1.14mJ (off)
Test Condition: 400V, 70A, 9.8Ohm, 15V
Gate Charge: 181 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 313 W
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CY62146GE30-45BVXI CY62146GE30-45BVXI Infineon Technologies Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u Description: IC SRAM 4MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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CY62157GE30-45BVXI CY62157GE30-45BVXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157GE30-45ZXI CY62157GE30-45ZXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62158GE30-45BVXI CY62158GE30-45BVXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Infineon Technologies Description: AIMBG75R060M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R060M1HXTMA1 AIMBG75R060M1HXTMA1 Infineon Technologies Description: AIMBG75R060M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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CY7C1352S-133AXC CY7C1352S-133AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
Access Time: 4 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
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FF100R12W1T7EB11BPSA1 Infineon Technologies FF100R12W1T7EB11BPSA1.pdf Description: EASY STANDARD
Packaging: Tray
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CY7C60323-LFXC CY7C60323-LFXC Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tray
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, SPI
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ISC008N06LM6ATMA1 ISC008N06LM6ATMA1 Infineon Technologies infineon-isc008n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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IPP70N04S406AKSA1 IPP70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98 Description: MOSFET N-CH 40V 70A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Qualification: AEC-Q101
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CY8C4148AZES558XQLA1 CY8C4148AZES558XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 100LQFP
Qualification: AEC-Q100
Number of I/O: 84
Grade: Automotive
Supplier Device Package: 100-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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IDYH80G200C5XKSA1 IDYH80G200C5XKSA1 Infineon Technologies Infineon-IDYH80G200C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917f09c7ac3973 Description: DIODE SIC 2000V 157A PGTO247U04
Current - Reverse Leakage @ Vr: 1.2 A @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-U04
Current - Average Rectified (Io): 157A
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Mounting Type: Through Hole
Package / Case: TO-247-4 Variant
Packaging: Tube
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CY9AF112NPMC-G-104E1 CY9AF112NPMC-G-104E1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S25HS512TFAMHB010 S25HS512TFAMHB010 Infineon Technologies infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CYT2B63BADR0AZSGST CYT2B63BADR0AZSGST Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 64LQFP
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
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CYT2B63CADQ0AZSGST CYT2B63CADQ0AZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
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CY7B9910-5SC CY7B9910-5SC Infineon Technologies CY7B9910_20.pdf Description: IC FANOUT BUFFER 24SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
PLL: Yes
Supplier Device Package: 24-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 80MHz
Output: TTL
Mounting Type: Surface Mount
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CY9AF104NAPMC-G-UNE1 CY9AF104NAPMC-G-UNE1 Infineon Technologies Description: IC MCU 32BIT 384KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
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TDA22590XUMA1 TDA22590XUMA1 Infineon Technologies infineon-tda22590-datasheet-en.pdf Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
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2EDN8523FXTMA1 2EDN8523FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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T1081N70TOHPRXPSA1 T1081N70TOHPRXPSA1 Infineon Technologies Description: SCR MODULE 7KV 2040A TO-200AF
Voltage - Off State: 7 kV
Current - On State (It (RMS)) (Max): 2040 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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CYPM1322-97BZXIT CYPM1322-97BZXIT Infineon Technologies Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: IC MCU 32BIT 256KB FLASH 97BGA
Packaging: Tape & Reel (TR)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
DigiKey Programmable: Not Verified
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ISZ24DP10LMATMA1 ISZ24DP10LMATMA1 Infineon Technologies Infineon-ISZ24DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9f6e21736f9 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
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ISZ24DP10LMATMA1 ISZ24DP10LMATMA1 Infineon Technologies Infineon-ISZ24DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9f6e21736f9 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
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CY2308ZI-1H CY2308ZI-1H Infineon Technologies CY2308.pdf Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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P6SWPREMIUMSOFT1 Infineon Technologies Description: SOFTWARE
Packaging: Electronic Delivery
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BSG0812NDATMA1 BSG0812NDATMA1 Infineon Technologies Infineon-BSG0812ND-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d3bb3125562b6 Description: MOSFET N-CH 8TISON
Packaging: Tape & Reel (TR)
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CYW88550CUBGTXTMA1 Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
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CY8C4124PVE-S412T CY8C4124PVE-S412T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 28SSOP
Qualification: AEC-Q100
Number of I/O: 24
Grade: Automotive
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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BUZ73A BUZ73A Infineon Technologies BUZ73A.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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SI4435DY SI4435DY Infineon Technologies si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
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BCM856SH6327XTSA1 BCM856SH6327XTSA1 Infineon Technologies bcm856s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d4974a0245 Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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CY8C4248LQI-BL583T CY8C4248LQI-BL583T Infineon Technologies infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C68033-56LFXC CY7C68033-56LFXC Infineon Technologies CY7C68033_34.pdf Description: IC USB NX2LP NAND CNTRLR 56VQFN
Packaging: Bag
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
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CY7C68014A-56LFXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-QFN (8x8)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
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CY7C68014A-56BAXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-VFBGA (5x5)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Packaging: Tray
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TTB6C95N12LOF_B1 Infineon Technologies INFNS20693-1.pdf?t.download=true&u=5oefqw Description: BRIDGE RECTIFIER & AC-SWITCHES
Packaging: Bulk
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TTB6C135N16LOFHOSA1 TTB6C135N16LOFHOSA1 Infineon Technologies Infineon-TTB6C135N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43136dd53db Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
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TTB6C135N16LOFHOSA1 TTB6C135N16LOFHOSA1 Infineon Technologies Infineon-TTB6C135N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43136dd53db Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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TTB6C165N16LOFHOSA1 TTB6C165N16LOFHOSA1 Infineon Technologies Infineon-TTB6C165N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4313a6053df Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1250A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 208 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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TLE4959CFXHAMA1 TLE4959CFXHAMA1 Infineon Technologies infineon-tle4959c-fx-datasheet-en.pdf Description: SENSOR ROTARY PC PIN
Packaging: Bulk
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP3XTMA1 TLE49SRP3XTMA1 Infineon Technologies 448_TLE49SR.pdf Description: TLE49SRP3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: PWM, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP3XTMA1 TLE49SRP3XTMA1 Infineon Technologies 448_TLE49SR.pdf Description: TLE49SRP3XTMA1
Grade: Automotive
Output Signal: Clockwise Increase
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-SSO-3-41
For Measuring: Angle, Rotary Position
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: PC Pin
Operating Temperature: -40°C ~ 150°C
Output: PWM, SENT
Mounting Type: Through Hole
Package / Case: 3-SIP Module, Formed Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
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CY7C1347G-166AXC CY7C1347G-166AXC Infineon Technologies Infineon-CY7C1347G_4_MBIT_(128K_X_36)_PIPELINED_SYNC_SRAM-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd1d7d2f3a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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CYW55571MIUBGT CYW55571MIUBGT Infineon Technologies infineon-cyw55571-airoc-tm-wi-fi-datasheet-en.pdf Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Produkt ist nicht verfügbar
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CYW55573MIUBGT CYW55573MIUBGT Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Produkt ist nicht verfügbar
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CY39200V208-125NTC CY39200V208-125NTC Infineon Technologies Description: IC CPLD 3072MC 10NS 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 136
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 208-PQFP (28x28)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Bag
Produkt ist nicht verfügbar
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AIMBG75R020M1HXTMA1 Infineon-AIMBG75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0262390273c
AIMBG75R020M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 81A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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1000+18.11 EUR
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AIMBG75R020M1HXTMA1 Infineon-AIMBG75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0262390273c
AIMBG75R020M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 81A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 34.1A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2326 pF @ 500 V
Qualification: AEC-Q101
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CY22392FXC download
CY22392FXC
Hersteller: Infineon Technologies
Description: IC CLKSYN FLSH PROG 3PLL 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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1+50.81 EUR
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TLS830A4EPV50XUMA1 Infineon-TLS830A4EPV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f4ad2fe25137
TLS830A4EPV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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10+2.2 EUR
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TLS830A4EPV50BOARDTOBO1 Infineon-Z8F80471187_TLS830A4EPV50_Demoboard-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019108462f217635
TLS830A4EPV50BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS830A4EPV50
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.2V ~ 40V
Current - Output: 300mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS830A4EPV50
Channels per IC: 1 - Single
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ISC009N03LF2SATMA1 Infineon-ISC009N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938bedb04e1a04
ISC009N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC009N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
Produkt ist nicht verfügbar
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ISC009N03LF2SATMA1 Infineon-ISC009N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938bedb04e1a04
ISC009N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC009N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 341A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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6+4 EUR
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ISC015N03LF2SATMA1 Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff
ISC015N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC015N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Produkt ist nicht verfügbar
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ISC015N03LF2SATMA1 Infineon-ISC015N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912755420fff
ISC015N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC015N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 4723 Stücke:
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IGLR65R270D2XUMA1 infineon-iglr65r270d2-datasheet-en.pdf
IGLR65R270D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
Produkt ist nicht verfügbar
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IGLR65R270D2XUMA1 infineon-iglr65r270d2-datasheet-en.pdf
IGLR65R270D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
auf Bestellung 4211 Stücke:
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5+4.49 EUR
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IKWH70N67PR7XKSA1 IKWH70N67PR7XKSA1.pdf
IKWH70N67PR7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 670V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/246ns
Switching Energy: 1.58mJ (on), 1.14mJ (off)
Test Condition: 400V, 70A, 9.8Ohm, 15V
Gate Charge: 181 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 313 W
auf Bestellung 68 Stücke:
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3+8.1 EUR
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CY62146GE30-45BVXI Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u
CY62146GE30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY62157GE30-45BVXI download
CY62157GE30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62157GE30-45ZXI download
CY62157GE30-45ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62158GE30-45BVXI download
CY62158GE30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMBG75R060M1HXTMA1
AIMBG75R060M1HXTMA1
Hersteller: Infineon Technologies
Description: AIMBG75R060M1HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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1000+8.47 EUR
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AIMBG75R060M1HXTMA1
AIMBG75R060M1HXTMA1
Hersteller: Infineon Technologies
Description: AIMBG75R060M1HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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2+14.39 EUR
10+11.1 EUR
25+10.28 EUR
100+9.38 EUR
250+8.94 EUR
500+8.69 EUR
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CY7C1352S-133AXC
CY7C1352S-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Clock Frequency: 133 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
Access Time: 4 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
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51+12.02 EUR
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FF100R12W1T7EB11BPSA1 FF100R12W1T7EB11BPSA1.pdf
Hersteller: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
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CY7C60323-LFXC
CY7C60323-LFXC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tray
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, SPI
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161+3.76 EUR
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ISC008N06LM6ATMA1 infineon-isc008n06lm6-datasheet-en.pdf
ISC008N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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IPP70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98
IPP70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4148AZES558XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148AZES558XQLA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Qualification: AEC-Q100
Number of I/O: 84
Grade: Automotive
Supplier Device Package: 100-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IDYH80G200C5XKSA1 Infineon-IDYH80G200C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917f09c7ac3973
IDYH80G200C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 2000V 157A PGTO247U04
Current - Reverse Leakage @ Vr: 1.2 A @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-U04
Current - Average Rectified (Io): 157A
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Mounting Type: Through Hole
Package / Case: TO-247-4 Variant
Packaging: Tube
auf Bestellung 140 Stücke:
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1+86.86 EUR
30+58.56 EUR
120+56.91 EUR
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CY9AF112NPMC-G-104E1
CY9AF112NPMC-G-104E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TFAMHB010 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf
S25HS512TFAMHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B63BADR0AZSGST
CYT2B63BADR0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Produkt ist nicht verfügbar
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CYT2B63CADQ0AZSGST Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63CADQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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CY7B9910-5SC CY7B9910_20.pdf
CY7B9910-5SC
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 24SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
PLL: Yes
Supplier Device Package: 24-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 80MHz
Output: TTL
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CY9AF104NAPMC-G-UNE1
CY9AF104NAPMC-G-UNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 384KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
Produkt ist nicht verfügbar
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TDA22590XUMA1 infineon-tda22590-datasheet-en.pdf
TDA22590XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
Produkt ist nicht verfügbar
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2EDN8523FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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508+1.08 EUR
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T1081N70TOHPRXPSA1
T1081N70TOHPRXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 7KV 2040A TO-200AF
Voltage - Off State: 7 kV
Current - On State (It (RMS)) (Max): 2040 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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CYPM1322-97BZXIT Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
CYPM1322-97BZXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 97BGA
Packaging: Tape & Reel (TR)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ24DP10LMATMA1 Infineon-ISZ24DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9f6e21736f9
ISZ24DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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ISZ24DP10LMATMA1 Infineon-ISZ24DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9f6e21736f9
ISZ24DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 2691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
2000+0.8 EUR
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CY2308ZI-1H CY2308.pdf
CY2308ZI-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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P6SWPREMIUMSOFT1
Hersteller: Infineon Technologies
Description: SOFTWARE
Packaging: Electronic Delivery
Produkt ist nicht verfügbar
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BSG0812NDATMA1 Infineon-BSG0812ND-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d3bb3125562b6
BSG0812NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 8TISON
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW88550CUBGTXTMA1
Hersteller: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4124PVE-S412T
CY8C4124PVE-S412T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Qualification: AEC-Q100
Number of I/O: 24
Grade: Automotive
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUZ73A BUZ73A.pdf
BUZ73A
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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SI4435DY si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DY
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
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BCM856SH6327XTSA1 bcm856s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d4974a0245
BCM856SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 71630 Stücke:
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AnzahlPrivatkunde
24+0.88 EUR
40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
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CY8C4248LQI-BL583T infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf
CY8C4248LQI-BL583T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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2+15.54 EUR
10+12.03 EUR
50+10.63 EUR
100+10.2 EUR
500+9.5 EUR
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CY7C68033-56LFXC CY7C68033_34.pdf
CY7C68033-56LFXC
Hersteller: Infineon Technologies
Description: IC USB NX2LP NAND CNTRLR 56VQFN
Packaging: Bag
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
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CY7C68014A-56LFXC download
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-QFN (8x8)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
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CY7C68014A-56BAXC download
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-VFBGA (5x5)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Packaging: Tray
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TTB6C95N12LOF_B1 INFNS20693-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BRIDGE RECTIFIER & AC-SWITCHES
Packaging: Bulk
auf Bestellung 206 Stücke:
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2+285.56 EUR
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TTB6C135N16LOFHOSA1 Infineon-TTB6C135N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43136dd53db
TTB6C135N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
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TTB6C135N16LOFHOSA1 Infineon-TTB6C135N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43136dd53db
TTB6C135N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
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TTB6C165N16LOFHOSA1 Infineon-TTB6C165N16XX-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4313a6053df
TTB6C165N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1250A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 208 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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TLE4959CFXHAMA1 infineon-tle4959c-fx-datasheet-en.pdf
TLE4959CFXHAMA1
Hersteller: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Bulk
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP3XTMA1 448_TLE49SR.pdf
TLE49SRP3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRP3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: PWM, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP3XTMA1 448_TLE49SR.pdf
TLE49SRP3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRP3XTMA1
Grade: Automotive
Output Signal: Clockwise Increase
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-SSO-3-41
For Measuring: Angle, Rotary Position
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: PC Pin
Operating Temperature: -40°C ~ 150°C
Output: PWM, SENT
Mounting Type: Through Hole
Package / Case: 3-SIP Module, Formed Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
auf Bestellung 1998 Stücke:
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3+9.29 EUR
5+8.34 EUR
10+7.98 EUR
25+7.56 EUR
50+7.27 EUR
100+7.01 EUR
500+6.47 EUR
1000+6.27 EUR
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CY7C1347G-166AXC Infineon-CY7C1347G_4_MBIT_(128K_X_36)_PIPELINED_SYNC_SRAM-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd1d7d2f3a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1347G-166AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW55571MIUBGT infineon-cyw55571-airoc-tm-wi-fi-datasheet-en.pdf
CYW55571MIUBGT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Produkt ist nicht verfügbar
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CYW55573MIUBGT
CYW55573MIUBGT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Produkt ist nicht verfügbar
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CY39200V208-125NTC
CY39200V208-125NTC
Hersteller: Infineon Technologies
Description: IC CPLD 3072MC 10NS 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 136
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 208-PQFP (28x28)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Bag
Produkt ist nicht verfügbar
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