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IPB160N04S203ATMA4 IPB160N04S203ATMA4 Infineon Technologies Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
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IRG4IBC20WPBF IRG4IBC20WPBF Infineon Technologies irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2 Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
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1EDF5673KXUMA1 1EDF5673KXUMA1 Infineon Technologies 1EDF5673FXUMA1.pdf Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
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CY7C1380KV33-250AXC CY7C1380KV33-250AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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DD104N08KAHPSA1 DD104N08KAHPSA1 Infineon Technologies DD104N.pdf Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
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IRFS4410TRLPBF IRFS4410TRLPBF Infineon Technologies irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0 Description: MOSFET N-CH 100V 88A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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S29GL512T12DHN013 S29GL512T12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
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S29GL01GT12DHN013 S29GL01GT12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
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64-2143PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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REF60100EDPSTOBO1 REF60100EDPSTOBO1 Infineon Technologies UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
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100+6.95 EUR
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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
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IM64A130AXTMA1 IM64A130AXTMA1 Infineon Technologies Infineon-IM64A130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0ba678451dee Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Tape & Reel (TR)
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IM64A130AXTMA1 IM64A130AXTMA1 Infineon Technologies Infineon-IM64A130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0ba678451dee Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Cut Tape (CT)
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50+2.09 EUR
100+1.95 EUR
250+1.78 EUR
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CY2309SXI-1 CY2309SXI-1 Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2309SXC-1H CY2309SXC-1H Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2309SXC-1H CY2309SXC-1H Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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100+8.23 EUR
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CYW20734UA2KFFB3GT Infineon Technologies infineon-cyw20734-single-chip-bluetooth-transceiver-for-wireless-input-devices-datasheet-additionaltechnicalinformation-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee2030d683e&utm_source=cypress&utm_medium Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
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TLD60982BSEVALTOBO1 TLD60982BSEVALTOBO1 Infineon Technologies infineon-z8f80237422-tld6098-2es-2bsepic-evaluation-kit-usermanual-en.pdf Description: EVAL BOARD FOR TLD6098
Outputs and Type: 2 Non-Isolated Outputs
Utilized IC / Part: TLD6098
Current - Output / Channel: 1A
Contents: Board(s)
Voltage - Input: 8V ~ 27V
Voltage - Output: 3V ~ 59V
Packaging: Bulk
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TLD60982DPVB2GEVALTOBO1 TLD60982DPVB2GEVALTOBO1 Infineon Technologies infineon-infineon-z8f80411563-tld6098-2dpvb2g-eval-ug-en.pdf-usermanual-en.pdf Description: EVAL BOARD FOR TLD60982ES
Packaging: Bulk
Voltage - Output: 43V ~ 52V
Voltage - Input: 8V ~ 27V
Current - Output: 7A, 7A
Contents: Board(s)
Frequency - Switching: 200kHz
Regulator Topology: Boost
Utilized IC / Part: TLD6098-2ES
Main Purpose: DC/DC, Step Up
Outputs and Type: 2 Non-Isolated Outputs
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REFSSRACDC2ATOBO1 REFSSRACDC2ATOBO1 Infineon Technologies Infineon-Solid_state_relay_reference_design_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101902a93782a3076 Description: REFSSRACDC2ATOBO1
Embedded: No
Contents: Board(s)
Type: Interface
Function: Relay
Packaging: Box
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CY2548C004 Infineon Technologies download Description: TSBU
Packaging: Tray
DigiKey Programmable: Not Verified
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CY25422SXC-002 Infineon Technologies ?docID=50798 Description: TSBU
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY25404ZXI014 CY25404ZXI014 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: TSBU
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY2X013LXI200T CY2X013LXI200T Infineon Technologies CY2X013.pdf Description: TSBU
Packaging: Bulk
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CY2XF24LXI702T CY2XF24LXI702T Infineon Technologies CY2XF24.pdf Description: TSBU
Packaging: Bulk
auf Bestellung 5783 Stücke:
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SIGC19T60SEX1SA1 SIGC19T60SEX1SA1 Infineon Technologies SIGC19T60SE_Rev2_7-20-17.pdf Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Produkt ist nicht verfügbar
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MB95F564KPF-G-UNE2 Infineon Technologies MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf Description: IC MCU 8BIT 20KB FLASH 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 17
DigiKey Programmable: Not Verified
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ISP16DP10LMAXTSA1 ISP16DP10LMAXTSA1 Infineon Technologies Infineon-ISP16DP10LMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921eca50fc3bf9 Description: ISP16DP10LMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
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ISP16DP10LMAXTSA1 ISP16DP10LMAXTSA1 Infineon Technologies Infineon-ISP16DP10LMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921eca50fc3bf9 Description: ISP16DP10LMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
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100+1.67 EUR
500+1.32 EUR
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CG9201AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG9201AMT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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BB 659C E7902 BB 659C E7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C E7912 BB 659C E7912 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VARIABLE 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C-02V E7912 BB 659C-02V E7912 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VARIABLE 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 664 E7902 BB 664 E7902 Infineon Technologies bb644_bb664series.pdf Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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BB 689 E7902 BB 689 E7902 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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BB 689 E7908 BB 689 E7908 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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SD 199 E6327 SD 199 E6327 Infineon Technologies SD199E6327.pdf Description: DIODE VARACTOR RF SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 25.0
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BB 659 E7908 BB 659 E7908 Infineon Technologies bb639_bb659series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d9bc2d2e015e Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
Produkt ist nicht verfügbar
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CY8C4146AZQ-S433 CY8C4146AZQ-S433 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69 Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 2500 Stücke:
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3+9.4 EUR
10+7.15 EUR
25+6.59 EUR
80+6.06 EUR
230+5.7 EUR
500+5.5 EUR
1000+5.36 EUR
2500+5.2 EUR
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ISZ053N08NM6ATMA1 ISZ053N08NM6ATMA1 Infineon Technologies Infineon-ISZ053N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f4003bf2c74 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
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ISZ053N08NM6ATMA1 ISZ053N08NM6ATMA1 Infineon Technologies Infineon-ISZ053N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f4003bf2c74 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
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CY25200KFZXC CY25200KFZXC Infineon Technologies Infineon-CY25200KFZXC-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4f3523a5e Description: IC CLOCK GEN PROG SPECT 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: VDDL
Frequency - Max: 200MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IRFI4110GPBF IRFI4110GPBF Infineon Technologies irfi4110gpbf.pdf?fileId=5546d462533600a401535623f28d1f78 Description: MOSFET N-CH 100V 72A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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SICMOSFET SICMOSFET Infineon Technologies Description: SILICON CARBIDE MOSFET KIT
Packaging: Book
Mounting Type: Surface Mount
Quantity: 30 Pieces (6 Values - 5 Each)
Kit Type: MOSFETs
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IPT009N08NM6ATMA1 IPT009N08NM6ATMA1 Infineon Technologies infineon-ipt009n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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KIT_XMC4X_HMI_OLED_001 KIT_XMC4X_HMI_OLED_001 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: KIT INTERFACE FOR XMC4500
Utilized IC / Part: XMC4500
Accessory Type: OLED Display
For Use With/Related Products: XMC4500
Packaging: Box
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CY8C4147AZI-S463 CY8C4147AZI-S463 Infineon Technologies Description: IC MCU 32BIT 128MB FLASH 64LQFP
Number of I/O: 38
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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EVAL2EDL803XF5BTOBO1 EVAL2EDL803XF5BTOBO1 Infineon Technologies Description: EVAL2EDL803XF5BTOBO1
Packaging: Box
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6XKSA1 Infineon Technologies IPP65R190E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043300464130130075026ea3b7e Description: MOSFET N-CH 650V 20.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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IPB80P04P4L08ATMA1 IPB80P04P4L08ATMA1 Infineon Technologies IPx80P04P4L-08_rev1.2_7-3-19.pdf Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180P04P403ATMA1 IPB180P04P403ATMA1 Infineon Technologies Infineon-IPB180P04P4_03-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f78472a2a2e4e Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C20336-24LQXI CY8C20336-24LQXI Infineon Technologies download Description: IC CAPSENSE 20 I/O 8K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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6EDL04I065NTXUMA1 6EDL04I065NTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
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6EDL04I065NTXUMA1 6EDL04I065NTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1985 Stücke:
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5+4.44 EUR
10+3.31 EUR
25+3.02 EUR
100+2.7 EUR
250+2.55 EUR
500+2.49 EUR
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6EDL04I065PTXUMA1 6EDL04I065PTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
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1000+2.39 EUR
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6EDL04I065PTXUMA1 6EDL04I065PTXUMA1 Infineon Technologies 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.44 EUR
10+3.31 EUR
25+3.02 EUR
100+2.7 EUR
250+2.55 EUR
500+2.49 EUR
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IPB160N04S203ATMA4 Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t
IPB160N04S203ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
auf Bestellung 424282 Stücke:
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114+4.82 EUR
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IRG4IBC20WPBF irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2
IRG4IBC20WPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
auf Bestellung 4000 Stücke:
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267+2.06 EUR
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1EDF5673KXUMA1 1EDF5673FXUMA1.pdf
1EDF5673KXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
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167+3.2 EUR
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CY7C1380KV33-250AXC download
CY7C1380KV33-250AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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DD104N08KAHPSA1 DD104N.pdf
DD104N08KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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IRFS4410TRLPBF irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0
IRFS4410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 842 Stücke:
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146+4.11 EUR
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S29GL512T12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12DHN013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL01GT12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12DHN013
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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64-2143PBF fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
BTH500301LUAAUMA1
Hersteller: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
BTH500301LUAAUMA1
Hersteller: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 142 Stücke:
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AnzahlPrivatkunde
2+15.32 EUR
10+10.35 EUR
100+7.56 EUR
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REF60100EDPSTOBO1 UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf
REF60100EDPSTOBO1
Hersteller: Infineon Technologies
Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+8.29 EUR
25+7.65 EUR
100+6.95 EUR
250+6.62 EUR
500+6.41 EUR
1000+6.25 EUR
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IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IM64A130AXTMA1 Infineon-IM64A130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0ba678451dee
IM64A130AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IM64A130AXTMA1 Infineon-IM64A130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0ba678451dee
IM64A130AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Cut Tape (CT)
auf Bestellung 3659 Stücke:
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7+3.14 EUR
10+2.46 EUR
25+2.24 EUR
50+2.09 EUR
100+1.95 EUR
250+1.78 EUR
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CY2309SXI-1 Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309SXI-1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.63 EUR
10+32.67 EUR
25+30.68 EUR
100+30.63 EUR
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CY2309SXC-1H Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309SXC-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+9.51 EUR
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CY2309SXC-1H Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309SXC-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.27 EUR
10+9.5 EUR
25+8.79 EUR
100+8.23 EUR
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CYW20734UA2KFFB3GT infineon-cyw20734-single-chip-bluetooth-transceiver-for-wireless-input-devices-datasheet-additionaltechnicalinformation-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee2030d683e&utm_source=cypress&utm_medium
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
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TLD60982BSEVALTOBO1 infineon-z8f80237422-tld6098-2es-2bsepic-evaluation-kit-usermanual-en.pdf
TLD60982BSEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD6098
Outputs and Type: 2 Non-Isolated Outputs
Utilized IC / Part: TLD6098
Current - Output / Channel: 1A
Contents: Board(s)
Voltage - Input: 8V ~ 27V
Voltage - Output: 3V ~ 59V
Packaging: Bulk
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TLD60982DPVB2GEVALTOBO1 infineon-infineon-z8f80411563-tld6098-2dpvb2g-eval-ug-en.pdf-usermanual-en.pdf
TLD60982DPVB2GEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD60982ES
Packaging: Bulk
Voltage - Output: 43V ~ 52V
Voltage - Input: 8V ~ 27V
Current - Output: 7A, 7A
Contents: Board(s)
Frequency - Switching: 200kHz
Regulator Topology: Boost
Utilized IC / Part: TLD6098-2ES
Main Purpose: DC/DC, Step Up
Outputs and Type: 2 Non-Isolated Outputs
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REFSSRACDC2ATOBO1 Infineon-Solid_state_relay_reference_design_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101902a93782a3076
REFSSRACDC2ATOBO1
Hersteller: Infineon Technologies
Description: REFSSRACDC2ATOBO1
Embedded: No
Contents: Board(s)
Type: Interface
Function: Relay
Packaging: Box
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1+81.96 EUR
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CY2548C004 download
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Tray
DigiKey Programmable: Not Verified
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91+6.68 EUR
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CY25422SXC-002 ?docID=50798
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Bulk
DigiKey Programmable: Not Verified
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37+16.64 EUR
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CY25404ZXI014 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI014
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Bulk
DigiKey Programmable: Not Verified
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34+18.18 EUR
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CY2X013LXI200T CY2X013.pdf
CY2X013LXI200T
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Bulk
auf Bestellung 445 Stücke:
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AnzahlPrivatkunde
31+19.83 EUR
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CY2XF24LXI702T CY2XF24.pdf
CY2XF24LXI702T
Hersteller: Infineon Technologies
Description: TSBU
Packaging: Bulk
auf Bestellung 5783 Stücke:
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25+24.48 EUR
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SIGC19T60SEX1SA1 SIGC19T60SE_Rev2_7-20-17.pdf
SIGC19T60SEX1SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Produkt ist nicht verfügbar
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MB95F564KPF-G-UNE2 MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISP16DP10LMAXTSA1 Infineon-ISP16DP10LMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921eca50fc3bf9
ISP16DP10LMAXTSA1
Hersteller: Infineon Technologies
Description: ISP16DP10LMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISP16DP10LMAXTSA1 Infineon-ISP16DP10LMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921eca50fc3bf9
ISP16DP10LMAXTSA1
Hersteller: Infineon Technologies
Description: ISP16DP10LMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 562 Stücke:
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6+3.86 EUR
10+2.46 EUR
50+1.86 EUR
100+1.67 EUR
500+1.32 EUR
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CG9201AM
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG9201AMT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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BB 659C E7902 bb639c_bb659cseries.pdf
BB 659C E7902
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C E7912 bb639c_bb659cseries.pdf
BB 659C E7912
Hersteller: Infineon Technologies
Description: DIODE VARIABLE 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C-02V E7912 bb639c_bb659cseries.pdf
BB 659C-02V E7912
Hersteller: Infineon Technologies
Description: DIODE VARIABLE 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 664 E7902 bb644_bb664series.pdf
BB 664 E7902
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Produkt ist nicht verfügbar
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BB 689 E7902 bb669_bb689series.pdf
BB 689 E7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
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BB 689 E7908 bb669_bb689series.pdf
BB 689 E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
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SD 199 E6327 SD199E6327.pdf
SD 199 E6327
Hersteller: Infineon Technologies
Description: DIODE VARACTOR RF SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 25.0
Produkt ist nicht verfügbar
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BB 659 E7908 bb639_bb659series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d9bc2d2e015e
BB 659 E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
Produkt ist nicht verfügbar
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CY8C4146AZQ-S433 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69
CY8C4146AZQ-S433
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
3+9.4 EUR
10+7.15 EUR
25+6.59 EUR
80+6.06 EUR
230+5.7 EUR
500+5.5 EUR
1000+5.36 EUR
2500+5.2 EUR
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ISZ053N08NM6ATMA1 Infineon-ISZ053N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f4003bf2c74
ISZ053N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
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ISZ053N08NM6ATMA1 Infineon-ISZ053N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f4003bf2c74
ISZ053N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
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CY25200KFZXC Infineon-CY25200KFZXC-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4f3523a5e
CY25200KFZXC
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG SPECT 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: VDDL
Frequency - Max: 200MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 642 Stücke:
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AnzahlPrivatkunde
5+4.41 EUR
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IRFI4110GPBF irfi4110gpbf.pdf?fileId=5546d462533600a401535623f28d1f78
IRFI4110GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 72A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 2950 Stücke:
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AnzahlPrivatkunde
127+4.27 EUR
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SICMOSFET
SICMOSFET
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET KIT
Packaging: Book
Mounting Type: Surface Mount
Quantity: 30 Pieces (6 Values - 5 Each)
Kit Type: MOSFETs
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+246.95 EUR
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IPT009N08NM6ATMA1 infineon-ipt009n08nm6-datasheet-en.pdf
IPT009N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Produkt ist nicht verfügbar
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KIT_XMC4X_HMI_OLED_001 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
KIT_XMC4X_HMI_OLED_001
Hersteller: Infineon Technologies
Description: KIT INTERFACE FOR XMC4500
Utilized IC / Part: XMC4500
Accessory Type: OLED Display
For Use With/Related Products: XMC4500
Packaging: Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+240.36 EUR
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CY8C4147AZI-S463
CY8C4147AZI-S463
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128MB FLASH 64LQFP
Number of I/O: 38
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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EVAL2EDL803XF5BTOBO1
EVAL2EDL803XF5BTOBO1
Hersteller: Infineon Technologies
Description: EVAL2EDL803XF5BTOBO1
Packaging: Box
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043300464130130075026ea3b7e
IPP65R190E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
auf Bestellung 56890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
140+3.93 EUR
Mindestbestellmenge: 140 Stücke
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IPB80P04P4L08ATMA1 IPx80P04P4L-08_rev1.2_7-3-19.pdf
IPB80P04P4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB180P04P403ATMA1 Infineon-IPB180P04P4_03-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f78472a2a2e4e
IPB180P04P403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY8C20336-24LQXI download
CY8C20336-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE 20 I/O 8K 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6EDL04I065NTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04I065NTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.39 EUR
Mindestbestellmenge: 1000 Stücke
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6EDL04I065NTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04I065NTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
10+3.31 EUR
25+3.02 EUR
100+2.7 EUR
250+2.55 EUR
500+2.49 EUR
Mindestbestellmenge: 5 Stücke
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6EDL04I065PTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04I065PTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.39 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
6EDL04I065PTXUMA1 6EDL04x065xT%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PTXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04I065PTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
10+3.31 EUR
25+3.02 EUR
100+2.7 EUR
250+2.55 EUR
500+2.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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