Produkte > INTERNATIONAL RECTIFIER > Alle Produkte des Herstellers INTERNATIONAL RECTIFIER (1390) > Seite 13 nach 24
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFB4228 | International Rectifier |
N-MOSFET 83A 180V 330W 0.012Ω IRFB4228 TIRFB4228 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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irfb4310 | International Rectifier |
N-MOSFET HEXFET 140A 100V 330W 0.007Ω IRFB4310 TIRFB4310 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4321 | International Rectifier | N-MOSFET HEXFET 83A 150V 330W 0.015Ω IRFB4321 TIRFB4321 |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4332 | International Rectifier |
N-MOSFET 60A 250V 390W 0.033Ω IRFB4332 TIRFB4332 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410 | International Rectifier |
N-MOSFET 88A 100V IRFB4410 TIRFB4410 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410Z | International Rectifier |
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410Z | International Rectifier |
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410Z | International Rectifier |
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410ZGPBF | International Rectifier |
Description: IRFB4410 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V |
auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFB4710 | International Rectifier |
N-MOSFET HEXFET 75A 100V 3.8W 0.014Ω IRFB4710 TIRFB4710 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB52N15D | International Rectifier |
N-MOSFET 60A 150V 320W 0.032Ω IRFB52N15D TIRFB52n15d Anzahl je Verpackung: 10 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB5620 | International Rectifier |
N-MOSFET 25A 200V 144W 0.0725Ω IRFB5620 TIRFB5620 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7430 | International Rectifier |
409A 40V 375W N-MOSFET IRFB7430 TO220AB TIRFB7430 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 540 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7437 | International Rectifier |
250A 40V 230W N-MOSFET IRFB7437 TO220AB TIRFB7437 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7446 | International Rectifier |
123A 40V 99W N-MOSFET IRFB7446 TO220AB TIRFB7446 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7446GPBF | International Rectifier |
Description: IRFB7446 - POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V |
auf Bestellung 1157 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFB7530 | International Rectifier |
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube IRFB7530 IRFB7530 TIRFB7530 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7534 | International Rectifier |
N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 115 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7537 | International Rectifier |
N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB9N65A | International Rectifier |
N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBA1404PPBF | International Rectifier |
Description: MOSFET N-CH 40V 206A SUPER-220 Packaging: Bulk Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 206A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 258 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFBC20 | International Rectifier |
N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBE30PBF | INTERNATIONAL RECTIFIER | N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFF1210 | International Rectifier | Description: N-CHANNEL HERMETIC MOS HEXFET |
Produkt ist nicht verfügbar |
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IRFF131 | International Rectifier | Description: MOSFET N-CH 80V 8A TO205AF |
Produkt ist nicht verfügbar |
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IRFF223 | International Rectifier |
Description: 3.0A, 150V, 1.2 OHM, N-CHANNEL P Packaging: Bulk |
Produkt ist nicht verfügbar |
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IRFF230 | International Rectifier |
N-MOSFET HEXFET 200V 5,5A 25W 0,40Ω IRFF230 TIRFF230 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFF233 | International Rectifier |
Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 150 V |
Produkt ist nicht verfügbar |
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IRFF311 | International Rectifier |
Description: TRANS MOSFET N-CH 350V 5.5A Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A Power Dissipation (Max): 15W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 350 V |
Produkt ist nicht verfügbar |
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IRFF313 | International Rectifier |
Description: 1.15A, 350V, 5OHM, N-CHANNEL POW Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A Power Dissipation (Max): 15W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 350 V |
Produkt ist nicht verfügbar |
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IRFF332 | International Rectifier | Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE |
Produkt ist nicht verfügbar |
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IRFF333 | International Rectifier | Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE |
Produkt ist nicht verfügbar |
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IRFF9133 | International Rectifier |
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drain to Source Voltage (Vdss): 80 V |
Produkt ist nicht verfügbar |
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IRFF9211 | International Rectifier | Description: AUTOMOTIVE HEXFET P-CHANNEL |
Produkt ist nicht verfügbar |
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IRFF9213 | International Rectifier | Description: MOSFET N-CH 150V 1.3A TO205AF |
Produkt ist nicht verfügbar |
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IRFF9221 | International Rectifier | Description: MOSFET N-CH 150V 2.5A TO205AF |
auf Bestellung 194 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFF9231 | International Rectifier |
Description: MOSFET N-CH 150V 4A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 150 V |
auf Bestellung 3214 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFF9233 | International Rectifier |
Description: AUTOMOTIVE HEXFET N-CHANNEL Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drain to Source Voltage (Vdss): 150 V |
auf Bestellung 289 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH4210DTRPBF | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V |
auf Bestellung 937 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH4234TRPBF | International Rectifier |
Description: MOSFET N-CH 25V 22A PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A Power Dissipation (Max): 3.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V |
Produkt ist nicht verfügbar |
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IRFH4257DTRPBF | International Rectifier |
Description: MOSFET 2N-CH 25V 25A PQFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W, 28W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: Dual PQFN (5x4) Part Status: Active |
auf Bestellung 1834 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH5250DTRPBF | International Rectifier |
Description: IRFH5250 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V |
auf Bestellung 902 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH5255TRPBF | International Rectifier | Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R |
Produkt ist nicht verfügbar |
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IRFH7085TR | International Rectifier |
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH7188TRPBF | International Rectifier |
Description: MOSFET N-CH 100V 18A/105A PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFH7194TRPBF | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFH7914TRPBF | International Rectifier |
Description: IRFH7914 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V |
auf Bestellung 3375 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH7921TRPBF-IR | International Rectifier |
Description: IRFH7921 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
auf Bestellung 11183 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH7932TR | International Rectifier |
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH7934TRPBF | International Rectifier |
Description: MOSFET N-CH 30V 24A/76A 8PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V |
auf Bestellung 4649 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH7936TRPBF | International Rectifier |
Description: IRFH7936 - N-CHANNEL Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V |
auf Bestellung 4530 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH8316TRPBF-IR | International Rectifier |
Description: IRFH8316 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V |
auf Bestellung 6260 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFH8321TR | International Rectifier |
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH8337TRPBF | International Rectifier |
Description: MOSFET N-CH 30V 12A/35A PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFHE4250DTRPBF | International Rectifier |
Description: MOSFET 2N-CH 25V 86A/303A 32QFN Packaging: Bulk Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA Supplier Device Package: 32-PQFN (6x6) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFHM4234TRPBF | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 25µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V |
auf Bestellung 1122 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFHM8337TRPBF-IR | International Rectifier | Description: MOSFET N-CH 30V 12A 8PQFN DL |
Produkt ist nicht verfügbar |
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IRFHM8342TRPBF-IR | International Rectifier |
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFI1010N | International Rectifier |
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI1010NPBF-IR | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar |
IRFB4228 |
Hersteller: International Rectifier
N-MOSFET 83A 180V 330W 0.012Ω IRFB4228 TIRFB4228
Anzahl je Verpackung: 2 Stücke
N-MOSFET 83A 180V 330W 0.012Ω IRFB4228 TIRFB4228
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.71 EUR |
irfb4310 |
Hersteller: International Rectifier
N-MOSFET HEXFET 140A 100V 330W 0.007Ω IRFB4310 TIRFB4310
Anzahl je Verpackung: 2 Stücke
N-MOSFET HEXFET 140A 100V 330W 0.007Ω IRFB4310 TIRFB4310
Anzahl je Verpackung: 2 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 6.92 EUR |
IRFB4321 |
Hersteller: International Rectifier
N-MOSFET HEXFET 83A 150V 330W 0.015Ω IRFB4321 TIRFB4321
N-MOSFET HEXFET 83A 150V 330W 0.015Ω IRFB4321 TIRFB4321
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)IRFB4332 |
Hersteller: International Rectifier
N-MOSFET 60A 250V 390W 0.033Ω IRFB4332 TIRFB4332
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60A 250V 390W 0.033Ω IRFB4332 TIRFB4332
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 8.87 EUR |
IRFB4410 |
Hersteller: International Rectifier
N-MOSFET 88A 100V IRFB4410 TIRFB4410
Anzahl je Verpackung: 10 Stücke
N-MOSFET 88A 100V IRFB4410 TIRFB4410
Anzahl je Verpackung: 10 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.63 EUR |
IRFB4410Z |
Hersteller: International Rectifier
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 4.68 EUR |
IRFB4410Z |
Hersteller: International Rectifier
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 4.68 EUR |
IRFB4410Z |
Hersteller: International Rectifier
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
N-MOSFET 97A 100V 230W 0.0072Ω IRFB4410Z TIRFB4410z
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 4.68 EUR |
IRFB4410ZGPBF |
Hersteller: International Rectifier
Description: IRFB4410 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Description: IRFB4410 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 2.76 EUR |
IRFB4710 |
Hersteller: International Rectifier
N-MOSFET HEXFET 75A 100V 3.8W 0.014Ω IRFB4710 TIRFB4710
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 75A 100V 3.8W 0.014Ω IRFB4710 TIRFB4710
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.23 EUR |
IRFB52N15D |
Hersteller: International Rectifier
N-MOSFET 60A 150V 320W 0.032Ω IRFB52N15D TIRFB52n15d
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60A 150V 320W 0.032Ω IRFB52N15D TIRFB52n15d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 6.35 EUR |
IRFB5620 |
Hersteller: International Rectifier
N-MOSFET 25A 200V 144W 0.0725Ω IRFB5620 TIRFB5620
Anzahl je Verpackung: 5 Stücke
N-MOSFET 25A 200V 144W 0.0725Ω IRFB5620 TIRFB5620
Anzahl je Verpackung: 5 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 13.21 EUR |
IRFB7430 |
Hersteller: International Rectifier
409A 40V 375W N-MOSFET IRFB7430 TO220AB TIRFB7430
Anzahl je Verpackung: 10 Stücke
409A 40V 375W N-MOSFET IRFB7430 TO220AB TIRFB7430
Anzahl je Verpackung: 10 Stücke
auf Bestellung 540 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 10.11 EUR |
IRFB7437 |
Hersteller: International Rectifier
250A 40V 230W N-MOSFET IRFB7437 TO220AB TIRFB7437
Anzahl je Verpackung: 10 Stücke
250A 40V 230W N-MOSFET IRFB7437 TO220AB TIRFB7437
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.93 EUR |
IRFB7446 |
Hersteller: International Rectifier
123A 40V 99W N-MOSFET IRFB7446 TO220AB TIRFB7446
Anzahl je Verpackung: 25 Stücke
123A 40V 99W N-MOSFET IRFB7446 TO220AB TIRFB7446
Anzahl je Verpackung: 25 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 4.23 EUR |
IRFB7446GPBF |
Hersteller: International Rectifier
Description: IRFB7446 - POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Description: IRFB7446 - POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
auf Bestellung 1157 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
378+ | 1.88 EUR |
IRFB7530 |
Hersteller: International Rectifier
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube IRFB7530 IRFB7530 TIRFB7530
Anzahl je Verpackung: 2 Stücke
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube IRFB7530 IRFB7530 TIRFB7530
Anzahl je Verpackung: 2 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 6.27 EUR |
IRFB7534 |
Hersteller: International Rectifier
N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534
Anzahl je Verpackung: 5 Stücke
N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534
Anzahl je Verpackung: 5 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.85 EUR |
IRFB7537 |
Hersteller: International Rectifier
N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.38 EUR |
IRFB9N65A |
Hersteller: International Rectifier
N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a
Anzahl je Verpackung: 10 Stücke
N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.01 EUR |
IRFBA1404PPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 206A SUPER-220
Packaging: Bulk
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 206A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET N-CH 40V 206A SUPER-220
Packaging: Bulk
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 206A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
177+ | 4.08 EUR |
IRFBC20 |
Hersteller: International Rectifier
N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20
Anzahl je Verpackung: 10 Stücke
N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 1.16 EUR |
IRFBE30PBF |
Hersteller: INTERNATIONAL RECTIFIER
N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free
N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 3.41 EUR |
IRFF1210 |
Hersteller: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
Description: N-CHANNEL HERMETIC MOS HEXFET
Produkt ist nicht verfügbar
IRFF131 |
Hersteller: International Rectifier
Description: MOSFET N-CH 80V 8A TO205AF
Description: MOSFET N-CH 80V 8A TO205AF
Produkt ist nicht verfügbar
IRFF223 |
Produkt ist nicht verfügbar
IRFF230 |
Hersteller: International Rectifier
N-MOSFET HEXFET 200V 5,5A 25W 0,40Ω IRFF230 TIRFF230
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 200V 5,5A 25W 0,40Ω IRFF230 TIRFF230
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 12.72 EUR |
IRFF233 |
Hersteller: International Rectifier
Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
IRFF311 |
Hersteller: International Rectifier
Description: TRANS MOSFET N-CH 350V 5.5A
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Description: TRANS MOSFET N-CH 350V 5.5A
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Produkt ist nicht verfügbar
IRFF313 |
Hersteller: International Rectifier
Description: 1.15A, 350V, 5OHM, N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Description: 1.15A, 350V, 5OHM, N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Produkt ist nicht verfügbar
IRFF332 |
Hersteller: International Rectifier
Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE
Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE
Produkt ist nicht verfügbar
IRFF333 |
Hersteller: International Rectifier
Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE
Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE
Produkt ist nicht verfügbar
IRFF9133 |
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
IRFF9211 |
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET P-CHANNEL
Description: AUTOMOTIVE HEXFET P-CHANNEL
Produkt ist nicht verfügbar
IRFF9213 |
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 1.3A TO205AF
Description: MOSFET N-CH 150V 1.3A TO205AF
Produkt ist nicht verfügbar
IRFF9221 |
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 2.5A TO205AF
Description: MOSFET N-CH 150V 2.5A TO205AF
auf Bestellung 194 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
194+ | 5.12 EUR |
IRFF9231 |
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 4A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
Description: MOSFET N-CH 150V 4A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 3214 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 10.7 EUR |
IRFF9233 |
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 289 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
185+ | 3.84 EUR |
IRFH4210DTRPBF |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
auf Bestellung 937 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
249+ | 2.91 EUR |
IRFH4234TRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Produkt ist nicht verfügbar
IRFH4257DTRPBF |
Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
Part Status: Active
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
Part Status: Active
auf Bestellung 1834 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
306+ | 2.35 EUR |
IRFH5250DTRPBF |
Hersteller: International Rectifier
Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
auf Bestellung 902 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
362+ | 1.97 EUR |
IRFH5255TRPBF |
Hersteller: International Rectifier
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
Produkt ist nicht verfügbar
IRFH7085TR |
Hersteller: International Rectifier
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 4.02 EUR |
IRFH7188TRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
Produkt ist nicht verfügbar
IRFH7194TRPBF |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Produkt ist nicht verfügbar
IRFH7914TRPBF |
Hersteller: International Rectifier
Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
auf Bestellung 3375 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1126+ | 0.65 EUR |
IRFH7921TRPBF-IR |
Hersteller: International Rectifier
Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 11183 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
831+ | 0.86 EUR |
IRFH7932TR |
Hersteller: International Rectifier
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.68 EUR |
IRFH7934TRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 4649 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
466+ | 1.52 EUR |
IRFH7936TRPBF |
Hersteller: International Rectifier
Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
auf Bestellung 4530 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
831+ | 0.86 EUR |
IRFH8316TRPBF-IR |
Hersteller: International Rectifier
Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
auf Bestellung 6260 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
866+ | 0.84 EUR |
IRFH8321TR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 1.28 EUR |
IRFH8337TRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Produkt ist nicht verfügbar
IRFHE4250DTRPBF |
Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
156+ | 4.63 EUR |
IRFHM4234TRPBF |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
auf Bestellung 1122 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
770+ | 0.94 EUR |
IRFHM8337TRPBF-IR |
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 12A 8PQFN DL
Description: MOSFET N-CH 30V 12A 8PQFN DL
Produkt ist nicht verfügbar
IRFHM8342TRPBF-IR |
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
IRFI1010N |
Hersteller: International Rectifier
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.55 EUR |
IRFI1010NPBF-IR |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar