Produkte > INTERNATIONAL RECTIFIER > Alle Produkte des Herstellers INTERNATIONAL RECTIFIER (1319) > Seite 13 nach 22
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IRFF9233 | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drain to Source Voltage (Vdss): 150 V |
auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH3702TR | International Rectifier |
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP IRFH3702TR2 IRFH3702TR TIRFH3702 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH4210DTRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V |
auf Bestellung 937 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4257DTRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W, 28W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: Dual PQFN (5x4) |
auf Bestellung 1834 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5250DTRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5255TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5255TRPBF | International Rectifier |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFH7085TR | International Rectifier |
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH7194TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFH7914TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V |
auf Bestellung 3375 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7921TRPBF-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
auf Bestellung 10501 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7932TR | International Rectifier |
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFH7934TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V |
auf Bestellung 2785 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7936TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V |
auf Bestellung 4530 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH8316TRPBF-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V |
auf Bestellung 2260 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH8321TR | International Rectifier |
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFHE4250DTRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA Supplier Device Package: 32-PQFN (6x6) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM4234TRPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 25µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V |
auf Bestellung 1122 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM8337TRPBF-IR | International Rectifier |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFHM8342TRPBF-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFI1010N | International Rectifier |
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI1010NPBF-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFI1310N | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI3205 | International Rectifier |
N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI3306GPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI4020H-117P | International Rectifier |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4024H-117P | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4024H-117P | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4227 | International Rectifier |
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4227 | International Rectifier |
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227 Anzahl je Verpackung: 38 Stücke |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4228PBF-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI4229 | International Rectifier |
N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI4229PBF | International Rectifier |
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auf Bestellung 363 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4321 | International Rectifier |
Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI520N | International Rectifier |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 270 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI520NPBF | International Rectifier |
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auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFI530N | International Rectifier |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 189 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI540N | International Rectifier |
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI540N | International Rectifier |
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso Anzahl je Verpackung: 10 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI720G | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI7440GPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRFI7536GPBF-IR | International Rectifier |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFI9630G | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIB41N15D | International Rectifier |
N-MOSFET 150V 41A IRFIB41N15D Infineon TIRFIB41n15d Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIRL60B216 | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO220-3-904 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFIZ24N | International Rectifier |
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ24N | International Rectifier |
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ34N | International Rectifier |
N-MOSFET 55V 21A 37W IRFIZ34N Infineon TIRFIZ34n Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ44N | International Rectifier |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ46N | International Rectifier |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL014NTR | International Rectifier |
Transistor N-Channel MOSFET; 55V; 20V; 160mOhm; 2,7A; 2,1W; -55°C ~ 150°C; Equivalent: IRFL014N; IRFL014NTR; SP001570856; SP001554878; IRFL014N TIRFL014n Anzahl je Verpackung: 25 Stücke |
auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL024NTR | International Rectifier |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL4105TR | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL4310TR | International Rectifier |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFL4310TR | International Rectifier |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL4315 | International Rectifier |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFM150 | International Rectifier | Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFM250 | International Rectifier | Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA |
auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFM9240 | International Rectifier | Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-254AA |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFMG50 | International Rectifier | Trans MOSFET N-CH 1KV 5.6A 3-Pin(3+Tab) TO-254AA |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFF9233 |
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Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
185+ | 2.6 EUR |
IRFH3702TR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP IRFH3702TR2 IRFH3702TR TIRFH3702
Anzahl je Verpackung: 50 Stücke
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP IRFH3702TR2 IRFH3702TR TIRFH3702
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.75 EUR |
IRFH4210DTRPBF |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
auf Bestellung 937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
249+ | 2.03 EUR |
IRFH4257DTRPBF |
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Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
251+ | 1.86 EUR |
IRFH5250DTRPBF |
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Hersteller: International Rectifier
Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
297+ | 1.56 EUR |
IRFH5255TRPBF |
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Hersteller: International Rectifier
Description: MOSFET N-CH 25V 15A/51A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
Description: MOSFET N-CH 25V 15A/51A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
501+ | 0.93 EUR |
IRFH5255TRPBF |
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Hersteller: International Rectifier
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH7085TR |
Hersteller: International Rectifier
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.61 EUR |
IRFH7194TRPBF |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH7914TRPBF |
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Hersteller: International Rectifier
Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
auf Bestellung 3375 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1126+ | 0.45 EUR |
IRFH7921TRPBF-IR |
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Hersteller: International Rectifier
Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 10501 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
682+ | 0.68 EUR |
IRFH7932TR |
Hersteller: International Rectifier
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.51 EUR |
IRFH7934TRPBF |
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Hersteller: International Rectifier
Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 2785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
382+ | 1.22 EUR |
IRFH7936TRPBF |
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Hersteller: International Rectifier
Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
auf Bestellung 4530 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
682+ | 0.68 EUR |
IRFH8316TRPBF-IR |
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Hersteller: International Rectifier
Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
710+ | 0.65 EUR |
IRFH8321TR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 1.15 EUR |
IRFHE4250DTRPBF |
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Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
156+ | 3.14 EUR |
IRFHM4234TRPBF |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
auf Bestellung 1122 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
631+ | 0.74 EUR |
IRFHM8337TRPBF-IR |
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Hersteller: International Rectifier
Description: MOSFET N-CH 30V 12A 8PQFN DL
Description: MOSFET N-CH 30V 12A 8PQFN DL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFHM8342TRPBF-IR |
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Hersteller: International Rectifier
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI1010N |
Hersteller: International Rectifier
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.5 EUR |
IRFI1010NPBF-IR |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI1310N |
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Hersteller: International Rectifier
N-MOSFET 24A 100V 56W 0.036Ω IRFI1310N TIRFI1310n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 24A 100V 56W 0.036Ω IRFI1310N TIRFI1310n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.23 EUR |
IRFI3205 |
Hersteller: International Rectifier
N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205
Anzahl je Verpackung: 10 Stücke
N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205
Anzahl je Verpackung: 10 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 5.19 EUR |
IRFI3306GPBF |
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Hersteller: International Rectifier
Description: IRFI3306G - 60V SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V
Description: IRFI3306G - 60V SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
141+ | 3.42 EUR |
IRFI4020H-117P |
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Hersteller: International Rectifier
2xN-MOSFET 9.1A 200V 21W 0.1Ω IRFI4020H-117PXKMA1 IRFI4020H-117P TO220/5Qiso TIRFI4020h-117p
Anzahl je Verpackung: 5 Stücke
2xN-MOSFET 9.1A 200V 21W 0.1Ω IRFI4020H-117PXKMA1 IRFI4020H-117P TO220/5Qiso TIRFI4020h-117p
Anzahl je Verpackung: 5 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 4.33 EUR |
IRFI4024H-117P |
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Hersteller: International Rectifier
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 4.4 EUR |
IRFI4024H-117P |
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Hersteller: International Rectifier
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 4.4 EUR |
IRFI4227 |
Hersteller: International Rectifier
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 25 Stücke
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 25 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 3.65 EUR |
IRFI4227 |
Hersteller: International Rectifier
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 38 Stücke
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 38 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 3.65 EUR |
IRFI4228PBF-IR |
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Hersteller: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
242+ | 2.04 EUR |
IRFI4229 |
Hersteller: International Rectifier
N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229
Anzahl je Verpackung: 25 Stücke
N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 6.41 EUR |
IRFI4229PBF |
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Hersteller: International Rectifier
Trans MOSFET N-CH 250V 19A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 250V 19A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 363 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
169+ | 3.18 EUR |
IRFI4321 |
Hersteller: International Rectifier
Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 8.21 EUR |
IRFI520N |
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Hersteller: International Rectifier
N-MOSFET 7.6A 100V 30W 0.2Ω IRFI520N TIRFI520N
Anzahl je Verpackung: 50 Stücke
N-MOSFET 7.6A 100V 30W 0.2Ω IRFI520N TIRFI520N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.3 EUR |
IRFI520NPBF |
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Hersteller: International Rectifier
Description: MOSFET N-CH 100V 7.6A TO220FP
Description: MOSFET N-CH 100V 7.6A TO220FP
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRFI530N |
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Hersteller: International Rectifier
N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n
Anzahl je Verpackung: 50 Stücke
N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 189 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.16 EUR |
IRFI540N |
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.71 EUR |
IRFI540N |
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.71 EUR |
IRFI720G |
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Hersteller: International Rectifier
N-MOSFET 3A 400V 30W 1.8Ω IRFI720G iso TIRF720 iso
Anzahl je Verpackung: 10 Stücke
N-MOSFET 3A 400V 30W 1.8Ω IRFI720G iso TIRF720 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.44 EUR |
IRFI7440GPBF |
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Hersteller: International Rectifier
Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI7536GPBF-IR |
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Hersteller: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Description: HEXFET N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI9630G |
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Hersteller: International Rectifier
P-MOSFET 200V 4.3A 35W IRFI9630G VISHAY TIRFI9630g
Anzahl je Verpackung: 10 Stücke
P-MOSFET 200V 4.3A 35W IRFI9630G VISHAY TIRFI9630g
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.83 EUR |
IRFIB41N15D |
Hersteller: International Rectifier
N-MOSFET 150V 41A IRFIB41N15D Infineon TIRFIB41n15d
Anzahl je Verpackung: 10 Stücke
N-MOSFET 150V 41A IRFIB41N15D Infineon TIRFIB41n15d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.21 EUR |
IRFIRL60B216 |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFIZ24N |
Hersteller: International Rectifier
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 1.22 EUR |
IRFIZ24N |
Hersteller: International Rectifier
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 55V 14A 29W IRFIZ24N Infineon TIRFIZ24n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 2.72 EUR |
IRFIZ34N |
Hersteller: International Rectifier
N-MOSFET 55V 21A 37W IRFIZ34N Infineon TIRFIZ34n
Anzahl je Verpackung: 10 Stücke
N-MOSFET 55V 21A 37W IRFIZ34N Infineon TIRFIZ34n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.41 EUR |
IRFIZ44N | ![]() |
Hersteller: International Rectifier
N-MOSFET 55V 31A 45W IRFIZ44N Infineon TIRFIZ44n
Anzahl je Verpackung: 50 Stücke
N-MOSFET 55V 31A 45W IRFIZ44N Infineon TIRFIZ44n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.89 EUR |
IRFIZ46N |
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Hersteller: International Rectifier
N-MOSFET 55V 33A 45W IRFIZ46N Infineon TIRFIZ46n
Anzahl je Verpackung: 25 Stücke
N-MOSFET 55V 33A 45W IRFIZ46N Infineon TIRFIZ46n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 1.78 EUR |
IRFL014NTR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 55V; 20V; 160mOhm; 2,7A; 2,1W; -55°C ~ 150°C; Equivalent: IRFL014N; IRFL014NTR; SP001570856; SP001554878; IRFL014N TIRFL014n
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 55V; 20V; 160mOhm; 2,7A; 2,1W; -55°C ~ 150°C; Equivalent: IRFL014N; IRFL014NTR; SP001570856; SP001554878; IRFL014N TIRFL014n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.91 EUR |
IRFL024NTR |
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Hersteller: International Rectifier
Transistor N-Channel MOSFET; 55V; 20V; 75mOhm; 4A; 2,1W; -55°C ~ 150°C; IRFL024N TIRFL024n
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 55V; 20V; 75mOhm; 4A; 2,1W; -55°C ~ 150°C; IRFL024N TIRFL024n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.82 EUR |
IRFL4105TR |
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Hersteller: International Rectifier
Transistor N-Channel MOSFET; 55V; 20V; 45mOhm; 5,2A; 2,1W; -55°C ~ 150°C; IRFL4105 TIRFL4105
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 55V; 20V; 45mOhm; 5,2A; 2,1W; -55°C ~ 150°C; IRFL4105 TIRFL4105
Anzahl je Verpackung: 10 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.46 EUR |
IRFL4310TR |
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Hersteller: International Rectifier
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL4310TR |
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Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 200mOhm; 2,2A; 2,1W; -55°C ~ 150°C; IRFL4310 TIRFL4310
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 200mOhm; 2,2A; 2,1W; -55°C ~ 150°C; IRFL4310 TIRFL4310
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.99 EUR |
IRFL4315 |
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Hersteller: International Rectifier
Transistor N-MOSFET; 150V; 30V; 185mOhm; 2,6A; 2,8W; -55°C ~ 150°C; Replacement: IRFL4315; IRFL4315TR; IRFL4315; IRFL4315TR TIRFL4315
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 150V; 30V; 185mOhm; 2,6A; 2,8W; -55°C ~ 150°C; Replacement: IRFL4315; IRFL4315TR; IRFL4315; IRFL4315TR TIRFL4315
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.62 EUR |
IRFM150 |
Hersteller: International Rectifier
Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA
Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 236.02 EUR |
IRFM250 |
Hersteller: International Rectifier
Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA
Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 232.68 EUR |
10+ | 222.73 EUR |
25+ | 211.15 EUR |
50+ | 200.93 EUR |
100+ | 189.93 EUR |
1000+ | 180.91 EUR |
IRFM9240 |
Hersteller: International Rectifier
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-254AA
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-254AA
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 272.1 EUR |
10+ | 260.45 EUR |
25+ | 246.91 EUR |
50+ | 234.97 EUR |
IRFMG50 |
Hersteller: International Rectifier
Trans MOSFET N-CH 1KV 5.6A 3-Pin(3+Tab) TO-254AA
Trans MOSFET N-CH 1KV 5.6A 3-Pin(3+Tab) TO-254AA
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 247.35 EUR |