Produkte > INTERNATIONAL RECTIFIER > Alle Produkte des Herstellers INTERNATIONAL RECTIFIER (1349) > Seite 13 nach 23
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||
|---|---|---|---|---|---|---|---|
|   | IRFB7446GPBF | International Rectifier |  Description: IRFB7446 - POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V | auf Bestellung 1157 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFB7530 | International Rectifier | Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube  IRFB7530 IRFB7530 TIRFB7530 Anzahl je Verpackung: 2 Stücke | auf Bestellung 40 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFB7534 | International Rectifier | N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534 Anzahl je Verpackung: 5 Stücke | auf Bestellung 110 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFB7537 | International Rectifier | N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537 Anzahl je Verpackung: 10 Stücke | auf Bestellung 87 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFB9N65A | International Rectifier |  N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a Anzahl je Verpackung: 10 Stücke | auf Bestellung 8 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFBC20 | International Rectifier |  N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20 Anzahl je Verpackung: 10 Stücke | auf Bestellung 200 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFBE30PBF | INTERNATIONAL RECTIFIER |  N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free | auf Bestellung 5 Stücke:Lieferzeit 14-21 Tag (e) | 
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| IRFD9120 | International Rectifier |    Transistor P-Channel MOSFET; 100V; 20V; 600mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD9120 TIRFD9120 Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFF1210 | International Rectifier |  Description: N-CHANNEL HERMETIC MOS HEXFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||
|   | IRFF131 | International Rectifier |  Description: MOSFET N-CH 80V 8A TO205AF | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF233 | International Rectifier |  Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 150 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF311 | International Rectifier |  Description: TRANS MOSFET N-CH 350V 5.5A Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A Power Dissipation (Max): 15W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 350 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF313 | International Rectifier |  Description: 1.15A, 350V, 5OHM, N-CHANNEL POW Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A Power Dissipation (Max): 15W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 350 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF332 | International Rectifier |  Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF333 | International Rectifier |  Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF9133 | International Rectifier |  Description: AUTOMOTIVE HEXFET P-CHANNEL POWE Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drain to Source Voltage (Vdss): 80 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF9211 | International Rectifier |  Description: AUTOMOTIVE HEXFET P-CHANNEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF9213 | International Rectifier |  Description: MOSFET N-CH 150V 1.3A TO205AF | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFF9221 | International Rectifier |  Description: MOSFET N-CH 150V 2.5A TO205AF | auf Bestellung 194 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFF9231 | International Rectifier |  Description: MOSFET N-CH 150V 4A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Drain to Source Voltage (Vdss): 150 V | auf Bestellung 3214 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFF9233 | International Rectifier |  Description: AUTOMOTIVE HEXFET N-CHANNEL Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Power Dissipation (Max): 25W Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drain to Source Voltage (Vdss): 150 V | auf Bestellung 289 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFH3702TR | International Rectifier | Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP  IRFH3702TR2 IRFH3702TR TIRFH3702 Anzahl je Verpackung: 50 Stücke | auf Bestellung 200 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFH4210DTRPBF | International Rectifier |  Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V | auf Bestellung 937 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFH4257DTRPBF | International Rectifier |  Description: MOSFET 2N-CH 25V 25A PQFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W, 28W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: Dual PQFN (5x4) | auf Bestellung 1834 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH5250DTRPBF | International Rectifier |  Description: IRFH5250 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V | auf Bestellung 902 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH5255TRPBF | International Rectifier |  Description: MOSFET N-CH 25V 15A/51A PQFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V | auf Bestellung 4000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH5255TRPBF | International Rectifier |  Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
| IRFH7085TR | International Rectifier | N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085 Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFH7194TRPBF | International Rectifier |  Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
|   | IRFH7914TRPBF | International Rectifier |  Description: IRFH7914 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V | auf Bestellung 3375 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH7921TRPBF-IR | International Rectifier |  Description: IRFH7921 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V | auf Bestellung 10501 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFH7932TR | International Rectifier | N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932 Anzahl je Verpackung: 10 Stücke | auf Bestellung 37 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFH7934TRPBF | International Rectifier |  Description: MOSFET N-CH 30V 24A/76A 8PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V | auf Bestellung 2785 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH7936TRPBF | International Rectifier |  Description: IRFH7936 - N-CHANNEL Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V | auf Bestellung 4530 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFH8316TRPBF-IR | International Rectifier |  Description: IRFH8316 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V | auf Bestellung 2260 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFH8321TR | International Rectifier | Trans MOSFET N-CH 30V 21A 8-Pin QFN EP  IRFH8321TR IRFH8321 IRFH8321 TIRFH8321 Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFHE4250DTRPBF | International Rectifier |  Description: MOSFET 2N-CH 25V 86A/303A 32QFN Packaging: Bulk Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA Supplier Device Package: 32-PQFN (6x6) Part Status: Active | auf Bestellung 9000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFHM8337TRPBF-IR | International Rectifier |  Description: MOSFET N-CH 30V 12A 8PQFN DL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
| IRFHM8342TRPBF-IR | International Rectifier |  Description: MOSFET N-CH 30V 10A/28A 8PQFN DL Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||
|   | IRFHS8242TRPBF | International Rectifier |  Description: IRFHS8242 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V | auf Bestellung 177700 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFI1010N | International Rectifier | N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFI1010NPBF-IR | International Rectifier |  Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||
| IRFI1310N | International Rectifier |  N-MOSFET 24A 100V 56W 0.036Ω IRFI1310N TIRFI1310n Anzahl je Verpackung: 10 Stücke | auf Bestellung 80 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI3205 | International Rectifier | N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205 Anzahl je Verpackung: 10 Stücke | auf Bestellung 55 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI3306GPBF | International Rectifier |  Description: IRFI3306G - 60V SINGLE N-CHANNEL Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V | auf Bestellung 494 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFI4020H-117P | International Rectifier |  2xN-MOSFET 9.1A 200V 21W 0.1Ω  IRFI4020H-117PXKMA1 IRFI4020H-117P TO220/5Qiso TIRFI4020h-117p Anzahl je Verpackung: 5 Stücke | auf Bestellung 9 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI4024H-117P | International Rectifier |  2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p Anzahl je Verpackung: 10 Stücke | auf Bestellung 18 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI4024H-117P | International Rectifier |  2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI4227 | International Rectifier | N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227 Anzahl je Verpackung: 38 Stücke | auf Bestellung 38 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI4227 | International Rectifier | N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227 Anzahl je Verpackung: 25 Stücke | auf Bestellung 36 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFI4228PBF-IR | International Rectifier |  Description: HEXFET N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V | auf Bestellung 242 Stücke:Lieferzeit 10-14 Tag (e) | 
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| IRFI4229 | International Rectifier | N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229 Anzahl je Verpackung: 25 Stücke | auf Bestellung 25 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI4321 | International Rectifier | Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321 Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI520N | International Rectifier |  N-MOSFET 7.6A 100V 30W 0.2Ω IRFI520N TIRFI520N Anzahl je Verpackung: 50 Stücke | auf Bestellung 270 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFI520NPBF | International Rectifier |  Description: MOSFET N-CH 100V 7.6A TO220FP | auf Bestellung 2 Stücke:Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||
| IRFI530N | International Rectifier |  N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n Anzahl je Verpackung: 50 Stücke | auf Bestellung 189 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI540N | International Rectifier | Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C;  Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI540N | International Rectifier | Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C;  Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso Anzahl je Verpackung: 10 Stücke | auf Bestellung 32 Stücke:Lieferzeit 7-14 Tag (e) | 
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| IRFI720G | International Rectifier |  N-MOSFET 3A 400V 30W 1.8Ω IRFI720G iso TIRF720 iso Anzahl je Verpackung: 10 Stücke | auf Bestellung 80 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IRFI7440GPBF | International Rectifier |  Description: IRFI7440 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
| IRFB7446GPBF |  | 
Hersteller: International Rectifier
Description: IRFB7446 - POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
    Description: IRFB7446 - POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 310+ | 1.46 EUR | 
| IRFB7530 | 
Hersteller: International Rectifier
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube IRFB7530 IRFB7530 TIRFB7530
Anzahl je Verpackung: 2 Stücke
    Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube IRFB7530 IRFB7530 TIRFB7530
Anzahl je Verpackung: 2 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 6+ | 5.68 EUR | 
| IRFB7534 | 
Hersteller: International Rectifier
N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534
Anzahl je Verpackung: 5 Stücke
    N-MOSFET 60V 195A 2.4mΩ 294W IRFB7534 Infineon TIRFB7534
Anzahl je Verpackung: 5 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 3.33 EUR | 
| IRFB7537 | 
Hersteller: International Rectifier
N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 60V 173A 3.3mΩ 230W IRFB7537 International Rectifier TIRFB7537
Anzahl je Verpackung: 10 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 4.79 EUR | 
| IRFB9N65A |  | 
Hersteller: International Rectifier
N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 8,5A 650V 167W 0.93Ω IRFB9N65A TIRFB9n65a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 2.75 EUR | 
| IRFBC20 |  | 
Hersteller: International Rectifier
N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 2.2A 600V 50W 4.4Ω IRFBC20 TIRFBC20
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 30+ | 1.15 EUR | 
| IRFBE30PBF |  | 
Hersteller: INTERNATIONAL RECTIFIER
N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free
    N-Channel MOSFET, 800V, 3 Ohm 4.1A, TO220, Pb-Free
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 3+ | 2.94 EUR | 
| IRFD9120 |    | 
Hersteller: International Rectifier
Transistor P-Channel MOSFET; 100V; 20V; 600mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD9120 TIRFD9120
Anzahl je Verpackung: 10 Stücke
    Transistor P-Channel MOSFET; 100V; 20V; 600mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD9120 TIRFD9120
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 2.28 EUR | 
| IRFF1210 |  | 
Hersteller: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
    Description: N-CHANNEL HERMETIC MOS HEXFET
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF131 |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 80V 8A TO205AF
    Description: MOSFET N-CH 80V 8A TO205AF
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF233 |  | 
Hersteller: International Rectifier
Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
    Description: 4.5A, 150V, 0.6OHM, N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF311 |  | 
Hersteller: International Rectifier
Description: TRANS MOSFET N-CH 350V 5.5A
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
    Description: TRANS MOSFET N-CH 350V 5.5A
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF313 |  | 
Hersteller: International Rectifier
Description: 1.15A, 350V, 5OHM, N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
    Description: 1.15A, 350V, 5OHM, N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A
Power Dissipation (Max): 15W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 350 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF332 |  | 
Hersteller: International Rectifier
Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE
    Description: 3A, 400V, 1.5OHM, N-CHANNEL POWE
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF333 |  | 
Hersteller: International Rectifier
Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE
    Description: 3A, 350V, 1.5OHM, N-CHANNEL POWE
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF9133 |  | 
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
    Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF9211 |  | 
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET P-CHANNEL
    Description: AUTOMOTIVE HEXFET P-CHANNEL
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF9213 |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 1.3A TO205AF
    Description: MOSFET N-CH 150V 1.3A TO205AF
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFF9221 |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 2.5A TO205AF
    Description: MOSFET N-CH 150V 2.5A TO205AF
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 194+ | 3.47 EUR | 
| IRFF9231 |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 150V 4A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
    Description: MOSFET N-CH 150V 4A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 70+ | 7.24 EUR | 
| IRFF9233 |  | 
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
    Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Power Dissipation (Max): 25W
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 185+ | 2.6 EUR | 
| IRFH3702TR | 
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP IRFH3702TR2 IRFH3702TR TIRFH3702
Anzahl je Verpackung: 50 Stücke
    Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP IRFH3702TR2 IRFH3702TR TIRFH3702
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 50+ | 0.76 EUR | 
| IRFH4210DTRPBF |  | 
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
    Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
auf Bestellung 937 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 170+ | 2.66 EUR | 
| IRFH4257DTRPBF |  | 
Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
    Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 251+ | 1.86 EUR | 
| IRFH5250DTRPBF |  | 
Hersteller: International Rectifier
Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
    Description: IRFH5250 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 247+ | 1.83 EUR | 
| IRFH5255TRPBF |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 25V 15A/51A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
    Description: MOSFET N-CH 25V 15A/51A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 417+ | 1.09 EUR | 
| IRFH5255TRPBF |  | 
Hersteller: International Rectifier
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
    Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFH7085TR | 
Hersteller: International Rectifier
N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 60V 100A 3.2mΩ IRFH708TR International Rectifier TIRFH7085
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 3.33 EUR | 
| IRFH7194TRPBF |  | 
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
    Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFH7914TRPBF |  | 
Hersteller: International Rectifier
Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
    Description: IRFH7914 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
auf Bestellung 3375 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1126+ | 0.45 EUR | 
| IRFH7921TRPBF-IR |  | 
Hersteller: International Rectifier
Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
    Description: IRFH7921 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 10501 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 682+ | 0.68 EUR | 
| IRFH7932TR | 
Hersteller: International Rectifier
N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 30V 24A 3.1W 3.3mΩ IRFH7932TR International Rectifier TIRFH7932
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 1.39 EUR | 
| IRFH7934TRPBF |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
    Description: MOSFET N-CH 30V 24A/76A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 2785 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 382+ | 1.22 EUR | 
| IRFH7936TRPBF |  | 
Hersteller: International Rectifier
Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
    Description: IRFH7936 - N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
auf Bestellung 4530 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 567+ | 0.8 EUR | 
| IRFH8316TRPBF-IR |  | 
Hersteller: International Rectifier
Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
    Description: IRFH8316 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 710+ | 0.65 EUR | 
| IRFH8321TR | 
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
    Trans MOSFET N-CH 30V 21A 8-Pin QFN EP IRFH8321TR IRFH8321 IRFH8321 TIRFH8321
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 30+ | 1.07 EUR | 
| IRFHE4250DTRPBF |  | 
Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
    Description: MOSFET 2N-CH 25V 86A/303A 32QFN
Packaging: Bulk
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package: 32-PQFN (6x6)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 156+ | 3.14 EUR | 
| IRFHM8337TRPBF-IR |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 12A 8PQFN DL
    Description: MOSFET N-CH 30V 12A 8PQFN DL
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFHM8342TRPBF-IR |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
    Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFHS8242TRPBF |  | 
Hersteller: International Rectifier
Description: IRFHS8242 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
    Description: IRFHS8242 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
auf Bestellung 177700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1385+ | 0.33 EUR | 
| IRFI1010N | 
Hersteller: International Rectifier
N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 55V 49A IRFI1010N Infineon TIRFI1010n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 2.53 EUR | 
| IRFI1010NPBF-IR |  | 
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
    Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IRFI1310N |  | 
Hersteller: International Rectifier
N-MOSFET 24A 100V 56W 0.036Ω IRFI1310N TIRFI1310n
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 24A 100V 56W 0.036Ω IRFI1310N TIRFI1310n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 2.04 EUR | 
| IRFI3205 | 
Hersteller: International Rectifier
N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 64A 55V 63W 0.008Ω IRFI3205 TIRFI3205
Anzahl je Verpackung: 10 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 5.26 EUR | 
| IRFI3306GPBF |  | 
Hersteller: International Rectifier
Description: IRFI3306G - 60V SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V
    Description: IRFI3306G - 60V SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 50 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 151+ | 3 EUR | 
| IRFI4020H-117P |  | 
Hersteller: International Rectifier
2xN-MOSFET 9.1A 200V 21W 0.1Ω IRFI4020H-117PXKMA1 IRFI4020H-117P TO220/5Qiso TIRFI4020h-117p
Anzahl je Verpackung: 5 Stücke
    2xN-MOSFET 9.1A 200V 21W 0.1Ω IRFI4020H-117PXKMA1 IRFI4020H-117P TO220/5Qiso TIRFI4020h-117p
Anzahl je Verpackung: 5 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 3.98 EUR | 
| IRFI4024H-117P |  | 
Hersteller: International Rectifier
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
    2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 4.45 EUR | 
| IRFI4024H-117P |  | 
Hersteller: International Rectifier
2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
    2xN-MOSFET 11A 55V 14W 0.06Ω IRFI4024H-117P TO220/5Qiso TIRFI4024h-117p
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 4.45 EUR | 
| IRFI4227 | 
Hersteller: International Rectifier
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 38 Stücke
    N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 38 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 38+ | 3.69 EUR | 
| IRFI4227 | 
Hersteller: International Rectifier
N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 25 Stücke
    N-MOSFET 26A 200V 46W 0.025Ω IRFI4227 TO220/5Qiso TIRFI4227
Anzahl je Verpackung: 25 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 25+ | 3.69 EUR | 
| IRFI4228PBF-IR |  | 
Hersteller: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
    Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 228+ | 2 EUR | 
| IRFI4229 | 
Hersteller: International Rectifier
N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229
Anzahl je Verpackung: 25 Stücke
    N-MOSFET 19A 250V 46W 0.046Ω IRFI4229 TIRFI4229
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 25+ | 6.49 EUR | 
| IRFI4321 | 
Hersteller: International Rectifier
Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321
Anzahl je Verpackung: 10 Stücke
    Transistor N-MOSFET; 150V; 30V; 16mOhm; 34A; 46W; -55°C ~ 150°C; IRFI4321 Infineon TIRFI4321
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 8.3 EUR | 
| IRFI520N |  | 
Hersteller: International Rectifier
N-MOSFET 7.6A 100V 30W 0.2Ω IRFI520N TIRFI520N
Anzahl je Verpackung: 50 Stücke
    N-MOSFET 7.6A 100V 30W 0.2Ω IRFI520N TIRFI520N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 50+ | 1.32 EUR | 
| IRFI520NPBF |  | 
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 7.6A TO220FP
    Description: MOSFET N-CH 100V 7.6A TO220FP
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRFI530N |  | 
Hersteller: International Rectifier
N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n
Anzahl je Verpackung: 50 Stücke
    N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 189 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 50+ | 1.18 EUR | 
| IRFI540N | 
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
    Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 2.74 EUR | 
| IRFI540N | 
Hersteller: International Rectifier
Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
    Transistor N-MOSFET; 100V; 20V; 52mOhm; 20A; 54W; -55°C ~ 175°C; Replacement: IRFI540N; IRFI540G; IRFI540N; IRFI540; IRFI540 ISO INFINEON; IRFI540N TIRF540 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 20+ | 2.74 EUR | 
| IRFI720G |  | 
Hersteller: International Rectifier
N-MOSFET 3A 400V 30W 1.8Ω IRFI720G iso TIRF720 iso
Anzahl je Verpackung: 10 Stücke
    N-MOSFET 3A 400V 30W 1.8Ω IRFI720G iso TIRF720 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 30+ | 1.33 EUR | 
| IRFI7440GPBF |  | 
Hersteller: International Rectifier
Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
    Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
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