Suchergebnisse für "2SA11" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Mindestbestellmenge: 2704
Mindestbestellmenge: 2704
Mindestbestellmenge: 1480
Mindestbestellmenge: 2704
Mindestbestellmenge: 854
Mindestbestellmenge: 25
Mindestbestellmenge: 50
Mindestbestellmenge: 12
Mindestbestellmenge: 3000
Mindestbestellmenge: 77
Mindestbestellmenge: 3258
Mindestbestellmenge: 1909
Mindestbestellmenge: 3000
Mindestbestellmenge: 6
Mindestbestellmenge: 34
Mindestbestellmenge: 77
Mindestbestellmenge: 12
Mindestbestellmenge: 3000
Mindestbestellmenge: 46
Mindestbestellmenge: 8
Mindestbestellmenge: 12
Mindestbestellmenge: 77
Mindestbestellmenge: 3000
Mindestbestellmenge: 3718
Mindestbestellmenge: 1909
Mindestbestellmenge: 6
Mindestbestellmenge: 34
Mindestbestellmenge: 3000
Mindestbestellmenge: 11539
Mindestbestellmenge: 11539
Mindestbestellmenge: 46
Mindestbestellmenge: 7
Mindestbestellmenge: 3000
Mindestbestellmenge: 2050
Mindestbestellmenge: 46
Mindestbestellmenge: 3000
Mindestbestellmenge: 8
Mindestbestellmenge: 1278
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SA1104 Produktcode: 160967 |
Sanken |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-3PN U, V: 120 V U, V: 120 V I, А: 8 А h21,max: 180 |
auf Bestellung 8 Stück: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
2SA1123 Produktcode: 153274 |
Panasonic |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-92B fT: 200 MHz U, V: 150 V U, V: 150 V I, А: 0,05 A h21,max: 450 |
auf Bestellung 8 Stück: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
2SA1145-Y Produktcode: 112786 |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-92MOD fT: 200 MHz U, V: 150 V U, V: 150 V I, А: 0,05 A |
auf Bestellung 45 Stück: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
2SA1156-Y Produktcode: 112789 |
NEC |
Transistoren > Bipolar-Transistoren PNP U, V: 400 V U, V: 400 V I, А: 0,5 A |
auf Bestellung 8 Stück: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
2SA1160 Produktcode: 184995 |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-92MOD fT: 140 MHz U, V: 10 V U, V: 20 V I, А: 2 A h21,max: 120 |
auf Bestellung 8 Stück: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
2SA1122CCTL-E | Renesas Electronics Corporation |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Supplier Device Package: 3-CMPAK Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 150 mW |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1122CCTR-E | Renesas Electronics Corporation |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Supplier Device Package: 3-CMPAK Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 150 mW |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1122CDTL-E | Renesas Electronics Corporation |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Supplier Device Package: 3-CMPAK Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 150 mW |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1122CDTR-E | Renesas Electronics Corporation |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V Supplier Device Package: 3-CMPAK Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 150 mW |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1152-A | Renesas Electronics Corporation |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 80 V |
auf Bestellung 28887 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1156 | NEC |
PNP 0.5A 400V 10W 2SA1156 T2SA1156 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
2SA1156 | NEC |
PNP 0.5A 400V 10W 2SA1156 T2SA1156 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LF | Toshiba | Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V |
auf Bestellung 85904 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 49226 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LF(B | Toshiba | Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R |
auf Bestellung 6577 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-GR,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-GR,LF(T | Toshiba | Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R |
auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-GR,LXGF(T | Toshiba | Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R |
auf Bestellung 2025 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LXHF | Toshiba | Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini) |
auf Bestellung 13290 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 19862 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-GR,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-GR,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-O,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 5385 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-O,LF | Toshiba | Bipolar Transistors - BJT Bias Resistor Built-in transistor |
auf Bestellung 17748 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-O,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-O,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-O,LXHF | Toshiba | Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini) |
auf Bestellung 5984 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-O,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-O,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 70hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-Y,LF | Toshiba | Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V |
auf Bestellung 11219 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 39160 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LF(B | Toshiba | Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R |
auf Bestellung 21500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-Y,LF(T | Toshiba | Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R |
auf Bestellung 1913 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-Y,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-Y,LXGF(T | Toshiba | Transistor Silicon PNP Epitaxial Audio Frequency General Purpose Amplifier Automotive AEC-Q101 |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LXHF | Toshiba | Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini) |
auf Bestellung 8445 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 15708 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162-Y,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162-Y,LXHF(T | TOSHIBA |
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 150mA usEccn: EAR99 euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162GT1 | onsemi |
Description: TRANS PNP 50V 0.15A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 137980 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162GT1 | ONSEMI |
Description: ONSEMI - 2SA1162GT1 - 2SA1162GT1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 137980 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1162YT1 | onsemi |
Description: TRANS PNP 50V 0.15A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 130820 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1162YT1 | ONSEMI |
Description: ONSEMI - 2SA1162YT1 - 2SA1162YT1, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 130820 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1163-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
auf Bestellung 35880 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-BL,LF | Toshiba | Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
auf Bestellung 128819 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-BL,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 120V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1163-BL,LF(T | Toshiba | Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R |
auf Bestellung 2347 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1163-BL,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
2SA1163-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
auf Bestellung 50031 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-GR,LF | Toshiba | Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR |
auf Bestellung 30953 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
2SA1163-GR,LF(T | Toshiba | Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R |
auf Bestellung 19823 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
2SA1163-GR,LF(T | TOSHIBA |
Description: TOSHIBA - 2SA1163-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 200hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 120V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
2SA1104 Produktcode: 160967 |
Hersteller: Sanken
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-3PN
U, V: 120 V
U, V: 120 V
I, А: 8 А
h21,max: 180
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-3PN
U, V: 120 V
U, V: 120 V
I, А: 8 А
h21,max: 180
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)2SA1123 Produktcode: 153274 |
Hersteller: Panasonic
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-92B
fT: 200 MHz
U, V: 150 V
U, V: 150 V
I, А: 0,05 A
h21,max: 450
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-92B
fT: 200 MHz
U, V: 150 V
U, V: 150 V
I, А: 0,05 A
h21,max: 450
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)2SA1145-Y Produktcode: 112786 |
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-92MOD
fT: 200 MHz
U, V: 150 V
U, V: 150 V
I, А: 0,05 A
Gehäuse: TO-92MOD
fT: 200 MHz
U, V: 150 V
U, V: 150 V
I, А: 0,05 A
auf Bestellung 45 Stück:
Lieferzeit 21-28 Tag (e)2SA1160 Produktcode: 184995 |
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-92MOD
fT: 140 MHz
U, V: 10 V
U, V: 20 V
I, А: 2 A
h21,max: 120
Gehäuse: TO-92MOD
fT: 140 MHz
U, V: 10 V
U, V: 20 V
I, А: 2 A
h21,max: 120
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)2SA1122CCTL-E |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2704+ | 0.17 EUR |
2SA1122CCTR-E |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2704+ | 0.17 EUR |
2SA1122CDTL-E |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1480+ | 0.32 EUR |
2SA1122CDTR-E |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
Supplier Device Package: 3-CMPAK
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 150 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2704+ | 0.17 EUR |
2SA1152-A |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
auf Bestellung 28887 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
854+ | 0.55 EUR |
2SA1156 |
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.15 EUR |
2SA1156 |
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.05 EUR |
2SA1162-GR,LF |
Hersteller: Toshiba
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
auf Bestellung 85904 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 0.25 EUR |
19+ | 0.15 EUR |
100+ | 0.069 EUR |
1000+ | 0.058 EUR |
3000+ | 0.042 EUR |
9000+ | 0.035 EUR |
24000+ | 0.033 EUR |
2SA1162-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.048 EUR |
6000+ | 0.042 EUR |
9000+ | 0.04 EUR |
15000+ | 0.037 EUR |
21000+ | 0.035 EUR |
30000+ | 0.033 EUR |
2SA1162-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 49226 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.23 EUR |
120+ | 0.15 EUR |
193+ | 0.092 EUR |
500+ | 0.066 EUR |
1000+ | 0.058 EUR |
2SA1162-GR,LF(B |
Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
auf Bestellung 6577 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3258+ | 0.046 EUR |
3356+ | 0.043 EUR |
5000+ | 0.041 EUR |
2SA1162-GR,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-GR,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-GR,LF(T |
Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-GR,LXGF(T |
Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1909+ | 0.079 EUR |
1920+ | 0.076 EUR |
2SA1162-GR,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.099 EUR |
9000+ | 0.094 EUR |
15000+ | 0.087 EUR |
2SA1162-GR,LXHF |
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
auf Bestellung 13290 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.33 EUR |
100+ | 0.15 EUR |
1000+ | 0.13 EUR |
3000+ | 0.1 EUR |
9000+ | 0.084 EUR |
24000+ | 0.083 EUR |
2SA1162-GR,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 19862 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
56+ | 0.32 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
2SA1162-GR,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-GR,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-GR,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-O,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 5385 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.23 EUR |
120+ | 0.15 EUR |
193+ | 0.092 EUR |
500+ | 0.066 EUR |
1000+ | 0.058 EUR |
2SA1162-O,LF |
Hersteller: Toshiba
Bipolar Transistors - BJT Bias Resistor Built-in transistor
Bipolar Transistors - BJT Bias Resistor Built-in transistor
auf Bestellung 17748 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 0.25 EUR |
19+ | 0.15 EUR |
100+ | 0.069 EUR |
1000+ | 0.058 EUR |
3000+ | 0.042 EUR |
9000+ | 0.04 EUR |
24000+ | 0.033 EUR |
2SA1162-O,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
2SA1162-O,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5865 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
77+ | 0.23 EUR |
122+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.095 EUR |
2SA1162-O,LXHF |
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.39 EUR |
12+ | 0.24 EUR |
100+ | 0.11 EUR |
1000+ | 0.1 EUR |
3000+ | 0.076 EUR |
2SA1162-O,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 70hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 70hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-O,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 70hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-O,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 70hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-Y,LF |
Hersteller: Toshiba
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
auf Bestellung 11219 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 0.25 EUR |
19+ | 0.15 EUR |
100+ | 0.069 EUR |
1000+ | 0.058 EUR |
3000+ | 0.042 EUR |
9000+ | 0.035 EUR |
24000+ | 0.033 EUR |
2SA1162-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 39160 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 0.23 EUR |
120+ | 0.15 EUR |
193+ | 0.092 EUR |
500+ | 0.066 EUR |
1000+ | 0.058 EUR |
2SA1162-Y,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.048 EUR |
6000+ | 0.042 EUR |
9000+ | 0.04 EUR |
15000+ | 0.037 EUR |
21000+ | 0.035 EUR |
30000+ | 0.033 EUR |
2SA1162-Y,LF(B |
Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
auf Bestellung 21500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3718+ | 0.041 EUR |
5000+ | 0.038 EUR |
10000+ | 0.036 EUR |
2SA1162-Y,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-Y,LF(T |
Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
auf Bestellung 1913 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-Y,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-Y,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-Y,LXGF(T |
Hersteller: Toshiba
Transistor Silicon PNP Epitaxial Audio Frequency General Purpose Amplifier Automotive AEC-Q101
Transistor Silicon PNP Epitaxial Audio Frequency General Purpose Amplifier Automotive AEC-Q101
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1909+ | 0.079 EUR |
1920+ | 0.076 EUR |
2233+ | 0.063 EUR |
2SA1162-Y,LXHF |
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)
auf Bestellung 8445 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.33 EUR |
100+ | 0.15 EUR |
1000+ | 0.13 EUR |
3000+ | 0.1 EUR |
9000+ | 0.084 EUR |
24000+ | 0.083 EUR |
2SA1162-Y,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 15708 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
56+ | 0.32 EUR |
100+ | 0.2 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
2SA1162-Y,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.099 EUR |
9000+ | 0.094 EUR |
2SA1162-Y,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162-Y,LXHF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1162-Y,LXHF(T - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 150 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 150mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 80MHz
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162GT1 |
Hersteller: onsemi
Description: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 137980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.047 EUR |
2SA1162GT1 |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1162GT1 - 2SA1162GT1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1162GT1 - 2SA1162GT1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 137980 Stücke:
Lieferzeit 14-21 Tag (e)2SA1162YT1 |
Hersteller: onsemi
Description: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 130820 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.047 EUR |
2SA1162YT1 |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1162YT1 - 2SA1162YT1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1162YT1 - 2SA1162YT1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 130820 Stücke:
Lieferzeit 14-21 Tag (e)2SA1163-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 35880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
73+ | 0.24 EUR |
117+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.098 EUR |
2SA1163-BL,LF |
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 128819 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 0.41 EUR |
12+ | 0.25 EUR |
100+ | 0.12 EUR |
1000+ | 0.099 EUR |
3000+ | 0.076 EUR |
9000+ | 0.062 EUR |
24000+ | 0.06 EUR |
2SA1163-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.082 EUR |
6000+ | 0.073 EUR |
9000+ | 0.069 EUR |
15000+ | 0.064 EUR |
21000+ | 0.061 EUR |
30000+ | 0.059 EUR |
2SA1163-BL,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 120V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 120V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)2SA1163-BL,LF(T |
Hersteller: Toshiba
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
auf Bestellung 2347 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2050+ | 0.074 EUR |
2179+ | 0.067 EUR |
2228+ | 0.063 EUR |
2SA1163-BL,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Description: TOSHIBA - 2SA1163-BL,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)2SA1163-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 50031 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
77+ | 0.23 EUR |
124+ | 0.14 EUR |
500+ | 0.1 EUR |
1000+ | 0.092 EUR |
2SA1163-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.076 EUR |
6000+ | 0.068 EUR |
9000+ | 0.064 EUR |
15000+ | 0.06 EUR |
21000+ | 0.057 EUR |
30000+ | 0.054 EUR |
2SA1163-GR,LF |
Hersteller: Toshiba
Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR
Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR
auf Bestellung 30953 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.39 EUR |
12+ | 0.24 EUR |
100+ | 0.11 EUR |
1000+ | 0.09 EUR |
3000+ | 0.07 EUR |
9000+ | 0.058 EUR |
24000+ | 0.056 EUR |
2SA1163-GR,LF(T |
Hersteller: Toshiba
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
auf Bestellung 19823 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1278+ | 0.12 EUR |
1399+ | 0.1 EUR |
1637+ | 0.086 EUR |
2000+ | 0.078 EUR |
3000+ | 0.062 EUR |
6000+ | 0.056 EUR |
12000+ | 0.05 EUR |
2SA1163-GR,LF(T |
Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1163-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 120V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - 2SA1163-GR,LF(T - Bipolarer Einzeltransistor (BJT), PNP, 120 V, 100 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 120V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Wählen Sie Seite:
1
2
[ Nächste Seite >> ]