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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFP460A Produktcode: 22361 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.22 Ciss, pF/Qg, nC: 3520/56 JHGF: THT |
verfügbar: 154 Stück
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IRFP460PBF Produktcode: 192334 |
Siliconix |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 V Idd,A: 20 A Rds(on), Ohm: 0,27 Ohm Ciss, pF/Qg, nC: 4200/210 JHGF: THT |
erwartet:
50 Stück
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IRFP460PBF Produktcode: 23707 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.27 Ciss, pF/Qg, nC: 4200/210 JHGF: THT |
verfügbar: 9 Stück
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BFP 460 H6327 | Infineon Technologies | RF Bipolar Transistors RF BIP TRANSISTOR |
auf Bestellung 2730 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP460H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB ~ 26.5dB Power - Max: 230mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 5.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
auf Bestellung 897 Stücke: Lieferzeit 10-14 Tag (e) |
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C44AMFP4600ZA0J | KEMET | Film Capacitors 450VAC 6uF 5% |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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C44AMFP4600ZA0J | KEMET |
Description: CAP FILM 6UF 5% 850VDC RADIAL Packaging: Bulk Tolerance: ±5% Package / Case: Radial, Can Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 85°C Applications: General Purpose Lead Spacing: 0.878" (22.30mm) Termination: Threaded, Male Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - AC: 450V Voltage Rating - DC: 850V Height - Seated (Max): 3.228" (82.00mm) Part Status: Active Capacitance: 6 µF ESR (Equivalent Series Resistance): 5 mOhms Size / Dimension: 1.772" Dia (45.00mm) |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460 | Vishay |
N-MOSFET 20A 500V 250W Replacement: IRFP460A IRFP460 TIRFP460 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 468 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460A | Siliconix |
N-MOSFET 20A 500V 280W 0.27Ω IRFP460A TIRFP460 a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 502 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460APBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
auf Bestellung 7027 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460APBF | Vishay Semiconductors | MOSFET 500V N-CH HEXFET |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460APBF | Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 1171 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460B | Siliconix |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC IRFP460B IRFP460B TIRFP460b Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 62A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 62A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 550 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460BPBF | Vishay Semiconductors | MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS |
auf Bestellung 5025 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460BPBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460BPBF | Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 1316 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460HPBF | Vishay Siliconix |
Description: POWER MOSFET TO-247AC, 270 M @ 1 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460HPBF | Vishay Semiconductors | MOSFET Power MOSFET, 270 mO 10V |
auf Bestellung 1137 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460LC | Siliconix |
N-MOSFET 20A 500V 280W 0.27Ω IRFP460LC TIRFP460lc Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460LCPBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 588 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460LCPBF | Vishay Semiconductors | MOSFET 500V N-CH HEXFET |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1317 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1317 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460PBF | Vishay Semiconductors | MOSFET 500V N-CH HEXFET |
auf Bestellung 8837 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460PBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
auf Bestellung 5337 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP460PBF | Vishay/IR | N-канальний ПТ; Udss, В = 500; Id = 20 A; Ciss, пФ @ Uds, В = 4200 @ 25; Qg, нКл = 210 @ 10 В; Rds = 270 мОм @ 12 А, 10 В; Ugs(th) = 4 @ 250 мкА; Р, Вт = 280 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AC |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460PBF | Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP 460 H6327 | Infineon |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP460 | Infineon | SOT343 09+ |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP460 E6327 | infineon |
auf Bestellung 2392 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP460E6327 |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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BFP460H6327 | Infineon technologies |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP460APBF/IR | IR | 08+; |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP460APBFXKMA1 | Infineon |
auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP460B; 20A; 500V; 280W; 0.25R; N-канальный; корпус: TO-247; VISHAY |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460LCPBF | Vishay/IR | TO-247 |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460PBF | Vishay/IR | TO-247 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SSH22N50A(IRFP460) |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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XC62FP4602PR | TOREX |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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Транзистор IRFP460A |
auf Bestellung 4 Stücke: Lieferzeit 7-21 Tag (e) |
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Транзистор польовий IRFP460PBF 20A 500V N-ch TO-247 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50C-E3 | Vishay Semiconductors | MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460) |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP460 Produktcode: 59226 |
IXYS |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.27 Ciss, pF/Qg, nC: 4200/135 JHGF: THT |
Produkt ist nicht verfügbar
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IRFP460A Produktcode: 123237 |
SILI |
Transistoren > MOSFET N-CH Gehäuse: TO-247AC Uds,V: 500 V Idd,A: 20 A Rds(on), Ohm: 0,27 Ohm Ciss, pF/Qg, nC: 3100/105 JHGF: THT |
Produkt ist nicht verfügbar
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IRFP460APBF Produktcode: 45531 |
Siliconix |
Transistoren > MOSFET N-CH Uds,V: 500 V Idd,A: 20 A Rds(on), Ohm: 0,27 Ohm Ciss, pF/Qg, nC: 3100/105 JHGF: THT |
Produkt ist nicht verfügbar
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IRFP460LCPBF Produktcode: 22653 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.27 Ciss, pF/Qg, nC: 3600/120 JHGF: THT |
Produkt ist nicht verfügbar
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IRFP460N Produktcode: 142442 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRFP460PBF Produktcode: 149448 |
IR |
Transistoren > MOSFET N-CH Uds,V: 500 V Idd,A: 20 A Rds(on), Ohm: 0,27 Ohm Ciss, pF/Qg, nC: 4200/210 JHGF: THT |
Produkt ist nicht verfügbar
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FP-460 | FCL Components | Printers |
Produkt ist nicht verfügbar |
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44AMFP4600ZA0J | KEMET | YAGEO 6 U 850V |
Produkt ist nicht verfügbar |
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6AG41122FP460FX1 | Siemens |
Description: SIMATIC IPC647D (RACK PC) Packaging: Box Display Type: No Display Mounting Type: Rack Mount Type: Rack PC Operating Temperature: 0°C ~ 50°C Voltage - Supply: 100 ~ 240VAC Core Processor: Intel® Core™ i3-4330TE 2.4GHz, 2 Core Approval Agency: CE, CSA, cULus, EAC, KC, RCM, UL Ingress Protection: IP20/IP41 Expansion Type: PCIe Operating System: Supports Windows 7/10 Part Status: Active Storage: Supports SATA Memory: DDR3 SODIMM (32GB Installed) |
Produkt ist nicht verfügbar |
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BFP 460 E6433 | Infineon Technologies | Trans RF BJT NPN 4.5V 0.7A 230mW Automotive 4-Pin(3+Tab) SOT-343 T/R |
Produkt ist nicht verfügbar |
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BFP460 BOARD | Infineon Technologies |
Description: BOARD APPLICATION W/BFP460 LNA Packaging: Box For Use With/Related Products: BFP460 Frequency: 0Hz ~ 22GHz Type: Transistor Supplied Contents: Board(s) Part Status: Active |
Produkt ist nicht verfügbar |
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BFP460E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB ~ 26.5dB Power - Max: 230mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 5.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Obsolete |
Produkt ist nicht verfügbar |
IRFP460A Produktcode: 22361 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.22
Ciss, pF/Qg, nC: 3520/56
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.22
Ciss, pF/Qg, nC: 3520/56
JHGF: THT
verfügbar: 154 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 1.96 EUR |
10+ | 1.88 EUR |
IRFP460PBF Produktcode: 192334 |
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
erwartet:
50 Stück
IRFP460PBF Produktcode: 23707 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
verfügbar: 9 Stück
Anzahl | Preis ohne MwSt |
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1+ | 1.92 EUR |
BFP 460 H6327 |
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.83 EUR |
10+ | 0.62 EUR |
100+ | 0.35 EUR |
1000+ | 0.27 EUR |
3000+ | 0.22 EUR |
9000+ | 0.21 EUR |
24000+ | 0.19 EUR |
BFP460H6327XTSA1 |
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
26+ | 0.69 EUR |
28+ | 0.63 EUR |
100+ | 0.47 EUR |
250+ | 0.42 EUR |
500+ | 0.35 EUR |
C44AMFP4600ZA0J |
Hersteller: KEMET
Film Capacitors 450VAC 6uF 5%
Film Capacitors 450VAC 6uF 5%
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 56.27 EUR |
10+ | 51.85 EUR |
25+ | 50.37 EUR |
60+ | 45.94 EUR |
120+ | 40.88 EUR |
300+ | 39.99 EUR |
540+ | 38.51 EUR |
C44AMFP4600ZA0J |
Hersteller: KEMET
Description: CAP FILM 6UF 5% 850VDC RADIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Lead Spacing: 0.878" (22.30mm)
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - AC: 450V
Voltage Rating - DC: 850V
Height - Seated (Max): 3.228" (82.00mm)
Part Status: Active
Capacitance: 6 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 1.772" Dia (45.00mm)
Description: CAP FILM 6UF 5% 850VDC RADIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: Radial, Can
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Lead Spacing: 0.878" (22.30mm)
Termination: Threaded, Male
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - AC: 450V
Voltage Rating - DC: 850V
Height - Seated (Max): 3.228" (82.00mm)
Part Status: Active
Capacitance: 6 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 1.772" Dia (45.00mm)
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 56.69 EUR |
10+ | 52.21 EUR |
60+ | 46.24 EUR |
IRFP460 |
Hersteller: Vishay
N-MOSFET 20A 500V 250W Replacement: IRFP460A IRFP460 TIRFP460
Anzahl je Verpackung: 25 Stücke
N-MOSFET 20A 500V 250W Replacement: IRFP460A IRFP460 TIRFP460
Anzahl je Verpackung: 25 Stücke
auf Bestellung 468 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 11.21 EUR |
IRFP460A |
Hersteller: Siliconix
N-MOSFET 20A 500V 280W 0.27Ω IRFP460A TIRFP460 a
Anzahl je Verpackung: 5 Stücke
N-MOSFET 20A 500V 280W 0.27Ω IRFP460A TIRFP460 a
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.9 EUR |
IRFP460APBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.66 EUR |
21+ | 3.46 EUR |
27+ | 2.75 EUR |
28+ | 2.6 EUR |
500+ | 2.57 EUR |
IRFP460APBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 502 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.66 EUR |
21+ | 3.46 EUR |
27+ | 2.75 EUR |
28+ | 2.6 EUR |
500+ | 2.57 EUR |
IRFP460APBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 7027 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.88 EUR |
25+ | 6.26 EUR |
100+ | 5.37 EUR |
500+ | 4.77 EUR |
1000+ | 4.08 EUR |
2000+ | 3.85 EUR |
IRFP460APBF |
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET
MOSFET 500V N-CH HEXFET
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.74 EUR |
10+ | 6.9 EUR |
25+ | 5.53 EUR |
100+ | 5 EUR |
250+ | 4.88 EUR |
500+ | 4.84 EUR |
IRFP460APBF |
Hersteller: Vishay
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
auf Bestellung 1171 Stücke:
Lieferzeit 14-21 Tag (e)IRFP460B |
Hersteller: Siliconix
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC IRFP460B IRFP460B TIRFP460b
Anzahl je Verpackung: 5 Stücke
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC IRFP460B IRFP460B TIRFP460b
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.85 EUR |
IRFP460BPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.92 EUR |
21+ | 3.52 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
IRFP460BPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 550 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.92 EUR |
21+ | 3.52 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
IRFP460BPBF |
Hersteller: Vishay Semiconductors
MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS
MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS
auf Bestellung 5025 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.3 EUR |
10+ | 4.88 EUR |
25+ | 4.03 EUR |
100+ | 3.45 EUR |
250+ | 3.38 EUR |
500+ | 3.12 EUR |
1000+ | 2.73 EUR |
IRFP460BPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.33 EUR |
25+ | 4.23 EUR |
100+ | 3.63 EUR |
IRFP460BPBF |
Hersteller: Vishay
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
auf Bestellung 1316 Stücke:
Lieferzeit 14-21 Tag (e)IRFP460HPBF |
Hersteller: Vishay Siliconix
Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V
Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.74 EUR |
10+ | 4.81 EUR |
100+ | 3.89 EUR |
500+ | 3.46 EUR |
IRFP460HPBF |
Hersteller: Vishay Semiconductors
MOSFET Power MOSFET, 270 mO 10V
MOSFET Power MOSFET, 270 mO 10V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.68 EUR |
10+ | 4.77 EUR |
25+ | 4.51 EUR |
100+ | 3.85 EUR |
250+ | 3.63 EUR |
500+ | 3.41 EUR |
1000+ | 2.92 EUR |
IRFP460LC |
Hersteller: Siliconix
N-MOSFET 20A 500V 280W 0.27Ω IRFP460LC TIRFP460lc
Anzahl je Verpackung: 5 Stücke
N-MOSFET 20A 500V 280W 0.27Ω IRFP460LC TIRFP460lc
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 7.63 EUR |
IRFP460LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 11.91 EUR |
IRFP460LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 11.91 EUR |
16+ | 4.46 EUR |
IRFP460LCPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.54 EUR |
25+ | 6.77 EUR |
100+ | 5.8 EUR |
500+ | 5.16 EUR |
IRFP460LCPBF |
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET
MOSFET 500V N-CH HEXFET
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.48 EUR |
25+ | 8.18 EUR |
IRFP460PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.93 EUR |
25+ | 2.96 EUR |
26+ | 2.8 EUR |
IRFP460PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1317 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.93 EUR |
25+ | 2.96 EUR |
26+ | 2.8 EUR |
IRFP460PBF |
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET
MOSFET 500V N-CH HEXFET
auf Bestellung 8837 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.41 EUR |
25+ | 5.9 EUR |
100+ | 5.74 EUR |
250+ | 5.65 EUR |
500+ | 5.42 EUR |
IRFP460PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 5337 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.46 EUR |
25+ | 5.92 EUR |
100+ | 5.07 EUR |
500+ | 4.51 EUR |
1000+ | 3.86 EUR |
2000+ | 3.64 EUR |
IRFP460PBF |
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 500; Id = 20 A; Ciss, пФ @ Uds, В = 4200 @ 25; Qg, нКл = 210 @ 10 В; Rds = 270 мОм @ 12 А, 10 В; Ugs(th) = 4 @ 250 мкА; Р, Вт = 280 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AC
N-канальний ПТ; Udss, В = 500; Id = 20 A; Ciss, пФ @ Uds, В = 4200 @ 25; Qg, нКл = 210 @ 10 В; Rds = 270 мОм @ 12 А, 10 В; Ugs(th) = 4 @ 250 мкА; Р, Вт = 280 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AC
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 3.61 EUR |
10+ | 3.11 EUR |
100+ | 2.73 EUR |
IRFP460PBF |
Hersteller: Vishay
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)IRFP460B; 20A; 500V; 280W; 0.25R; N-канальный; корпус: TO-247; VISHAY |
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Транзистор польовий IRFP460PBF 20A 500V N-ch TO-247 |
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)SIHG20N50C-E3 |
Hersteller: Vishay Semiconductors
MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460)
MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460)
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)IRFP460 Produktcode: 59226 |
Hersteller: IXYS
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 4200/135
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 4200/135
JHGF: THT
Produkt ist nicht verfügbar
IRFP460A Produktcode: 123237 |
Hersteller: SILI
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 3100/105
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 3100/105
JHGF: THT
Produkt ist nicht verfügbar
IRFP460APBF Produktcode: 45531 |
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 3100/105
JHGF: THT
Transistoren > MOSFET N-CH
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 3100/105
JHGF: THT
Produkt ist nicht verfügbar
IRFP460LCPBF Produktcode: 22653 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 3600/120
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.27
Ciss, pF/Qg, nC: 3600/120
JHGF: THT
Produkt ist nicht verfügbar
IRFP460PBF Produktcode: 149448 |
Hersteller: IR
Transistoren > MOSFET N-CH
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
Transistoren > MOSFET N-CH
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 4200/210
JHGF: THT
Produkt ist nicht verfügbar
6AG41122FP460FX1 |
Hersteller: Siemens
Description: SIMATIC IPC647D (RACK PC)
Packaging: Box
Display Type: No Display
Mounting Type: Rack Mount
Type: Rack PC
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 100 ~ 240VAC
Core Processor: Intel® Core™ i3-4330TE 2.4GHz, 2 Core
Approval Agency: CE, CSA, cULus, EAC, KC, RCM, UL
Ingress Protection: IP20/IP41
Expansion Type: PCIe
Operating System: Supports Windows 7/10
Part Status: Active
Storage: Supports SATA
Memory: DDR3 SODIMM (32GB Installed)
Description: SIMATIC IPC647D (RACK PC)
Packaging: Box
Display Type: No Display
Mounting Type: Rack Mount
Type: Rack PC
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 100 ~ 240VAC
Core Processor: Intel® Core™ i3-4330TE 2.4GHz, 2 Core
Approval Agency: CE, CSA, cULus, EAC, KC, RCM, UL
Ingress Protection: IP20/IP41
Expansion Type: PCIe
Operating System: Supports Windows 7/10
Part Status: Active
Storage: Supports SATA
Memory: DDR3 SODIMM (32GB Installed)
Produkt ist nicht verfügbar
BFP 460 E6433 |
Hersteller: Infineon Technologies
Trans RF BJT NPN 4.5V 0.7A 230mW Automotive 4-Pin(3+Tab) SOT-343 T/R
Trans RF BJT NPN 4.5V 0.7A 230mW Automotive 4-Pin(3+Tab) SOT-343 T/R
Produkt ist nicht verfügbar
BFP460 BOARD |
Hersteller: Infineon Technologies
Description: BOARD APPLICATION W/BFP460 LNA
Packaging: Box
For Use With/Related Products: BFP460
Frequency: 0Hz ~ 22GHz
Type: Transistor
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD APPLICATION W/BFP460 LNA
Packaging: Box
For Use With/Related Products: BFP460
Frequency: 0Hz ~ 22GHz
Type: Transistor
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
BFP460E6327HTSA1 |
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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