Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMN2041UVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.8A TSOT26 Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drain to Source Voltage (Vdss): 20V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2041UVT-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2041UVT-7 | DIODES INC. | Description: DIODES INC. - DMN2041UVT-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 5.8 A, 5.8 A, 0.017 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2785 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2041UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K | auf Bestellung 7908 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2044UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 3.3A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V | auf Bestellung 503189 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2044UCB4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 9555 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2044UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 3.3A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V | auf Bestellung 501000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2044UCB4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 16A Power dissipation: 1.18W Case: U-WLB1010-4 Gate-source voltage: ±8V On-state resistance: 70mΩ Mounting: SMD Gate charge: 47nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2044UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.5A 4-Pin UWLP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2046U-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 3.4A SOT23 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2046U-13 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2046U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 3.4A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 126503 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2046U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 3.4A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2046U-7 | Diodes Incorporated | MOSFETs 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC | auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2046UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2046UVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 2.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 590mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TSOT-26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2046UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K | auf Bestellung 3162 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050L | DIODES INC. | Description: DIODES INC. - DMN2050L - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 5.9 A, 0.029 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 450mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.029ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1796 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2050L | DIODES INC. | Description: DIODES INC. - DMN2050L - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 20 V, 5.9 A, 0.029 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 450mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.029ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1796 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.9A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.9A SOT23-3 Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Part Status: Active | auf Bestellung 5703000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050L-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.9A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L-7 Produktcode: 62955
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMN2050L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Power dissipation: 1.4W Case: SOT23 On-state resistance: 0.1Ω Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050L-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.9A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.9A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050L-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.9A SOT23-3 Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V | auf Bestellung 5704985 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050L-7 | Diodes Incorporated | MOSFETs 1.4W 20V | auf Bestellung 8317 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 12455 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Power dissipation: 0.9W Case: U-DFN2020-6 On-state resistance: 55mΩ Mounting: SMD Gate charge: 12nC Pulsed drain current: 25A Kind of channel: enhancement Gate-source voltage: ±12V Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LFDB-13 | Diodes Incorporated | MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LFDB-13 | Diodes Zetex | Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 2702 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050LFDB-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050LFDB-7 | Diodes Incorporated | MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 2396 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LFDB-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.73W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape On-state resistance: 55mΩ Drain current: 4.1A Kind of channel: enhancement Drain-source voltage: 20V Gate-source voltage: ±12V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.9A Power dissipation: 1.4W Case: SOT23 On-state resistance: 29mΩ Mounting: SMD Gate charge: 6.7nC Application: automotive industry | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2050LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LQ-7 | Diodes Zetex | N-Channel Enhancement Mode Mosfet Automotive AEC-Q101 | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2050LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 2394 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.9A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | auf Bestellung 190000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053U-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 10K | auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.5A SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V | auf Bestellung 199988 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053U-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.5A SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V | auf Bestellung 190000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-7 | DIODES INC. | Description: DIODES INC. - DMN2053U-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.5 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2830 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.5A SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V | auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | auf Bestellung 135000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053U-7 | DIODES INC. | Description: DIODES INC. - DMN2053U-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.5 A, 0.026 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2830 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.5A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V | auf Bestellung 72271 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 22A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053U-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-13 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-7 | DIODES INC. | Description: DIODES INC. - DMN2053UFDB-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.023 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm Verlustleistung, p-Kanal: 1.14W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.14W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-7 | DIODES INCORPORATED | Category: Transistors - Unclassified Description: DMN2053UFDB-7 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UFDB-7 | DIODES INC. | Description: DIODES INC. - DMN2053UFDB-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.023 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm Verlustleistung, p-Kanal: 1.14W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.14W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDBQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UFDBQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UFDBQ-13 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 Automotive AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 10K | auf Bestellung 2187 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UQ-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 65458 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 226890 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R | auf Bestellung 225000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 1744 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVT-13 | Diodes Zetex | Trans MOSFET N-CH 20V 4.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 6220 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 | auf Bestellung 368469 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVT-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 | auf Bestellung 366000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVT-7 | Diodes Zetex | Trans MOSFET N-CH 20V 4.6A 6-Pin TSOT-26 T/R | auf Bestellung 396000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UVTQ-13 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVTQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T and R 3K | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVTQ-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UVTQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UVTQ-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2053UVTQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 4.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 23842 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UW-13 | Diodes Zetex | Trans MOSFET N-CH 20V 2.9A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN2053UW-13 | Diodes Incorporated | Description: MOSFET 8V~24V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2053UW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT323 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |