Produkte > RN2
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| RN2903A-I/RM105 | MICROCHIP | Description: MICROCHIP - RN2903A-I/RM105 - Transceiver-Modul, energiesparend, FSK, GFSK, LoRa, 300kB/s, 928MHz, -146dBm, 2.1V bis 3.6V tariffCode: 85176200 euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Modulschnittstelle: I2C, SPI, UART isCanonical: Y Anwendungsbereiche HF-Transceiver: Automatische Zählerablesung (AMR), drahtlose Sensornetze, Haus- und Gebäudeautomatisierung Übertragungsrate, max.: 300Kbps HF-Modulation: FSK, GFSK, LoRa Versorgungsspannung, min.: 2.1V Empfindlichkeit (dBm): -146dBm SVHC: No SVHC (04-Feb-2026) Versorgungsstrom: 124.4mA Produktpalette: LoRa Series productTraceability: No usEccn: 5A992.c Versorgungsspannung, max.: 3.6V Frequenz, max.: 928MHz Sendeleistung: 18.5dBm | auf Bestellung 321 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN2903A-I/RM105 | Microchip Technology | Description: RF TXRX MOD ISM<1GHZ CAST SMD Packaging: Tray Package / Case: Module Sensitivity: -146dBm Mounting Type: Surface Mount Frequency: 902MHz ~ 928MHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 3.6V Power - Output: 18.5dBm Data Rate: 300kbps Protocol: LoRa™ Current - Transmitting: 42.6mA ~ 124.4mA Antenna Type: Antenna Not Included, Castellation Modulation: FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 14873 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903A-I/RM105 Produktcode: 158852
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Lieblingsprodukt
| Modulare Elemente > IC Radiomodule | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2903A-I/RM105 | Microchip Technology | Sub-GHz Modules LoRa Transceiver Module 915MHz | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903A-I/RMSA103 | Microchip Technology | RF Transceiver FSK/GFSK 3.3V 47-Pin Tray | Produkt ist nicht verfügbar | Mindestbestellmenge: 650 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903A-I/RMSA103 | Microchip Technology | Description: RF TXRX MOD ISM<1GHZ CAST SMD Packaging: Tray Package / Case: 47-SMD Module Sensitivity: -146dBm Mounting Type: Surface Mount Frequency: 902MHz ~ 928MHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 3.6V Power - Output: 18.5dBm Data Rate: 300kbps Protocol: LoRa™ Current - Receiving: 1.8mA ~ 3.1mA Current - Transmitting: 105mA ~ 122mA Antenna Type: Antenna Not Included, Castellation Modulation: FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 4588 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903A-I/RMSA103 | Microchip Technology | Sub-GHz Modules LoRa Transceiver Module South America | auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903A-I/RMSA103 | Microchip Technology | RF Transceiver FSK/GFSK 3.3V 47-Pin Tray | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903A-I/RMSA103 | Microchip Technology | RF Transceiver FSK/GFSK 3.3V 47-Pin Tray | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Part Status: Active Supplier Device Package: ES6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903FE(TE85L,F) | Toshiba | Digital Transistors ES6 PLN (LF) TRANSISTOR Pd=200mW F=200MHz | Produkt ist nicht verfügbar | Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903FE(TE85L,F) | Toshiba | Trans Digital BJT PNP 50V 100mA 100mW 6-Pin ES T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN2903FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Part Status: Active Supplier Device Package: ES6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903FE,LXHF(CT | Toshiba | RN2903FE,LXHF(CT | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2903FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903FE,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-563) | auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2903T5L.TSOT363-YC | TOSHIBA | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2904 | TOSHIBA | auf Bestellung 106700 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904,LF(CT | Toshiba | Digital Transistors Bias Resistor Built-in transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) | auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904,LXHF(CT | Toshiba | Trans Digital BJT PNP 50V 100mA 200mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=47kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Qualification: AEC-Q101 Grade: Automotive Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904FE,LF | Toshiba | Digital Transistors ES6 PLN | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MW ES6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LF(CT | Toshiba | Digital Transistors Bias Resistor Built-in transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MW ES6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MW ES6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LXHF(CT | Toshiba | RN2904FE,LXHF(CT | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904FE,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=47kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563) | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2904FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905 | TOSHIBA | 07+ SOT-363 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905 /YE | TOSHIBA | auf Bestellung 336200 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2905(TE85L) | TOSHIBA | SOT363-YE | auf Bestellung 639000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905(TE85L) SOT363-YE | TOSHIBA | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2905(TE85L) SOT363-YE | TOSHIBA | auf Bestellung 639000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2905(TE85L)SO | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN2905(TE85L)SOT363-YE | TOSHIBA | auf Bestellung 639000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN2905(TE85LF) | Toshiba | Digital Transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905,LF(CT | Toshiba | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | auf Bestellung 8890 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW | auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905,LXHF(CT | Toshiba | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=2.2kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905/YE | TOSHIBA | 00+ SOT-363 | auf Bestellung 330000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN2905FE(TE85L,F) | Toshiba | Digital Transistors Gen Trans PNP x 2 ES6, -50V, -100A | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LF(CB | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active | auf Bestellung 7965 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905FE,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Part Status: Active Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905FE,LF(CT | Toshiba | Digital Transistors Bias Resistor Built-in transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LF(CT | Toshiba | Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2905FE,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563) | auf Bestellung 7720 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 | auf Bestellung 5500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2905TE85L | auf Bestellung 2289000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN2905YE | TOSHIBA | SOT-363 | auf Bestellung 45100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906 | TOSHIBA | 07+ SOT-363 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF | Toshiba | Trans Digital BJT PNP 50V 100mA 200mW 6-Pin US T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms | auf Bestellung 5268 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906,LF | Toshiba | Trans Digital BJT PNP 50V 100mA 200mW 6-Pin US T/R | auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF | Toshiba | Trans Digital BJT PNP 50V 100mA 200mW 6-Pin US T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: US6 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906,LF | Toshiba | Digital Transistors US6-PLN | auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 0.2W US6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 0.2W US6 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF(CT | Toshiba | Digital Transistors Bias Resistor Built-in transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2PNP 50V 0.2W US6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=4.7kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363) | auf Bestellung 8858 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LXHF(CT | Toshiba | Trans Digital BJT PNP 50V 100mA 200mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE,LF(CT | Toshiba Semiconductor and Storage | Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 3876 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE,LF(CT | Toshiba Semiconductor and Storage | Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906FE,LF(CT | Toshiba | Digital Transistors PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A | Produkt ist nicht verfügbar | Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2906FE,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q TR PNPx2 Q1BSR=4.7kOhm Q1BER=47kOhm Q2BSR=4.7kOhm Q2BER=47kOhm VCEO=-50V IC=-0.1A SOT563 | auf Bestellung 3888 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2906FE,LXHF(CT | Toshiba | RN2906FE,LXHF(CT | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2907 | TOSHIBA | 02+ SOT-323-6 | auf Bestellung 11800 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN2907(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W US6 Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |
