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AOSD32334CAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 86186 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
29+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32338CAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSD62666EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666EAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 27231 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
11+1.94 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
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AOSD62666EAlpha? Semiconductor2N-канальний ПТ, Udss, В = 60, Id = 9,5 А, Ciss, пФ @ Uds, В = 755 @ 20, Qg, нКл = 10 @ 4,5 В, Rds = 14, 5 мОм @ 9,5A, 10 В, Ugs(th) = 2,2 В @ 250 мкА, Р, Вт = 2,5, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 12 Stücke:
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AOSD62666EALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 3818 Stücke:
Lieferzeit 14-21 Tag (e)
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AOSD62666EAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+0.76 EUR
9000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
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AOSGL.SET.1SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Packaging: Box
Diameter: Assorted
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+71.21 EUR
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AOSGL.SET.2SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Packaging: Box
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Part Status: Active
Tip Chip Size: Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+104.58 EUR
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AOSGL.SET.3SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Produkt ist nicht verfügbar
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AOSN21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 6699 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 18 Stücke
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AOSN21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
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AOSN32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 3.7A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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AOSOP.SETSRA Soldering ProductsDescription: SOP NOZZLE SET FOR HOT AIR REWOR
Packaging: Box
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Tip Chip Size: SOP
Produkt ist nicht verfügbar
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AOSP1800SRA Soldering ProductsDescription: MINI SOLDER POT SP1800, 120 WATT
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
1+197.35 EUR
5+179.08 EUR
10+171.75 EUR
25+162.52 EUR
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AOSP1800-220VSRA Soldering ProductsDescription: SP1800 MINI SOLDER POT
Features: Ceramic Heater, ESD Safe
Packaging: Box
Voltage - Input: 220VAC
Temperature Range: 392°F ~ 752°F (200°C ~ 400°C)
Type: Solder Pot
Includes: Crucible Pot
Workstand: Included, Not Specified
Control/Display Type: Analog
Plug Type: Included, Not Specified
Wattage: 120W
Supplied Iron, Tweezer, Handle: Included, Not Specified
Supplied Tips/Nozzles: Included, Not Specified
Number of Channels: 1
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+208.23 EUR
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AOSP2000+SRA Soldering ProductsDescription: LEAD FREE SOLDER POT SP2000+ WIT
Features: Ceramic Heater, ESD Safe
Packaging: Box
Voltage - Input: 110V
Temperature Range: 392°F ~ 896°F (200°C ~ 480°C)
Type: Solder Pot
Control/Display Type: Digital
Base Unit: SP2000+
Plug Type: Included, Not Specified
Wattage: 600W
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOSP21307ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21307Alpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21313CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
9000+0.46 EUR
Mindestbestellmenge: 3000 Stücke
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AOSP21313CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -28A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21313CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 26219 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.32 EUR
50+0.98 EUR
100+0.87 EUR
500+0.67 EUR
Mindestbestellmenge: 10 Stücke
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AOSP21321ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
auf Bestellung 1286 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 3 Stücke
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AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
121+1.48 EUR
192+0.89 EUR
194+0.86 EUR
298+0.54 EUR
301+0.51 EUR
500+0.37 EUR
1000+0.32 EUR
Mindestbestellmenge: 121 Stücke
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AOSP21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
194+0.92 EUR
298+0.58 EUR
301+0.57 EUR
500+0.43 EUR
1000+0.37 EUR
Mindestbestellmenge: 194 Stücke
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AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 1677 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.59 EUR
21+1 EUR
50+0.74 EUR
100+0.64 EUR
500+0.49 EUR
Mindestbestellmenge: 14 Stücke
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AOSP21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
10+2.36 EUR
50+1.77 EUR
100+1.59 EUR
500+1.26 EUR
Mindestbestellmenge: 6 Stücke
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AOSP21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.38 EUR
50+1.02 EUR
100+0.9 EUR
500+0.7 EUR
Mindestbestellmenge: 10 Stücke
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AOSP32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP32314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP32320CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
On-state resistance: 22mΩ
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 8.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 7531 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.65 EUR
21+1.02 EUR
50+0.75 EUR
100+0.67 EUR
500+0.51 EUR
Mindestbestellmenge: 13 Stücke
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AOSP32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
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AOSP32368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP32368Alpha? SemiconductorN-канальний ПТ, Udss, В = 30, Id = 16 А, Ciss, пФ @ Uds, В = 2270 @ 16, Qg, нКл = 60 @ 10 В, Rds = 5,5 мОм @ 16 A, 10 В, Ugs(th) = 2,4 В @ 250 мкА, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Очікується: 2700 Од. в
Anzahl je Verpackung: 3000 Stücke
verfügbar 180 Stücke:
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AOSP32368Alpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
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AOSP32368ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8; ESD
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.5mΩ
Drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
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AOSP32368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3122 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
22+0.96 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 14 Stücke
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AOSP36326CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 15nC
auf Bestellung 4113 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 3 Stücke
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AOSP36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.24 EUR
30000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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AOSP36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 30957 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
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AOSP4000SRA Soldering ProductsDescription: MINI SOLDER POT SP4000, 160 WATT
Features: Ceramic Heater
Packaging: Box
Voltage - Input: 110V
Temperature Range: 392°F ~ 752°F (200°C ~ 400°C)
Type: Solder Pot
Control/Display Type: Analog
Base Unit: SP4000
Plug Type: Included, Not Specified
Wattage: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSP62530Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP62626EAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66406Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66919Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 9582 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.33 EUR
10+2.12 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.04 EUR
Mindestbestellmenge: 7 Stücke
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AOSP66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.92 EUR
6000+0.84 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP66920Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.62 EUR
13+1.67 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
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AOSP66923Alpha & Omega Semiconductor100V N-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66925Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSP66925ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 11A; Idm: 44A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Technology: AlphaSGT™
Kind of package: reel; tape
Pulsed drain current: 44A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSS21115CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 12940 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
35+0.62 EUR
50+0.44 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 21 Stücke
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AOSS21115CAlpha & Omega SemiconductorTrans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSS21115CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS21115CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Drain current: 4.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: SOT23
On-state resistance: 40mΩ
Power dissipation: 1.3W
Gate charge: 17nC
Polarisation: unipolar
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 5 Stücke
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AOSS21115CAlpha & Omega SemiconductorTrans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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AOSS21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 12403 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
37+0.58 EUR
51+0.42 EUR
100+0.37 EUR
500+0.27 EUR
Mindestbestellmenge: 23 Stücke
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AOSS21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.64 EUR
6000+0.51 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.64 EUR
6000+0.52 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 21818 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.52 EUR
56+0.38 EUR
100+0.33 EUR
500+0.25 EUR
Mindestbestellmenge: 25 Stücke
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AOSS21319CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSS21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS32136CAlpha & Omega Semiconductor20V N-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS32136CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Mounting: SMD
Pulsed drain current: 38A
Power dissipation: 0.8W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 28mΩ
auf Bestellung 2849 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 5 Stücke
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AOSS32136CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
auf Bestellung 66616 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
35+0.62 EUR
50+0.44 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 22 Stücke
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AOSS32136CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS32334CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS32334CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AOSS32334CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Power dissipation: 1.3W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 20mΩ
auf Bestellung 3195 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 5 Stücke
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AOSS32334CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 24649 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
38+0.56 EUR
53+0.4 EUR
100+0.35 EUR
500+0.26 EUR
Mindestbestellmenge: 24 Stücke
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AOSS32338CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS32338CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 5 Stücke
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AOSS32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 39905 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS32338CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS32338CAOSMOSFET N-CH 30V 4A SOT23-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSS32338CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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AOSS32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 40048 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.51 EUR
57+0.37 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 25 Stücke
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AOSS62934Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.2 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS62934Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
auf Bestellung 112914 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
29+0.75 EUR
50+0.55 EUR
100+0.48 EUR
500+0.36 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS62934AOSMOSFET N-CH 100V 2A SOT23-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOSS62934Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS62934Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSS62934ALPHA&OMEGATrans MOSFET N-CH 100V 2A 3-Pin SOT-23 AOSS62934; REPLACEMENT HTSEMI PTL03N10; AOSS62934 TAOSS62934
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
150+0.3 EUR
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AOSX21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Produkt ist nicht verfügbar
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AOSX32128Alpha & Omega Semiconductor Inc.Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
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