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RH73X2A10GNTNTE Connectivity Passive ProductDescription: RES SMD 10G OHM 30% 1/8W 0805
Resistance: 10 GOhms
Part Status: Active
Height - Seated (Max): 0.020" (0.50mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 125°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Temperature Coefficient: ±1000ppm/°C
Package / Case: 0805 (2012 Metric)
Tolerance: ±30%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
auf Bestellung 8923 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
10+3.62 EUR
25+3.37 EUR
50+3.25 EUR
100+3.09 EUR
250+2.98 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A10GNTNTE Connectivity / HolsworthyThick Film Resistors - SMD RH73 2A 10G 30% 1000PPM
auf Bestellung 3665 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.99 EUR
10+3.27 EUR
100+2.92 EUR
500+2.89 EUR
1000+2.76 EUR
2000+2.68 EUR
5000+2.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A10GNTNTE Connectivity Passive ProductDescription: RES SMD 10G OHM 30% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±30%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.020" (0.50mm)
Part Status: Active
Resistance: 10 GOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.77 EUR
2000+2.71 EUR
3000+2.69 EUR
5000+2.65 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A10GNTNTE CONNECTIVITY - CGSDescription: TE CONNECTIVITY - CGS - RH73X2A10GNTN - Chipwiderstand, Oberflächenmontage, 10 Gohm, ± 30%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: YES
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 125mW
Widerstandstyp: Hochspannung
isCanonical: N
Widerstand: 10Gohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 30%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: RH73 Series
productTraceability: No
Nennspannung: 100V
Betriebstemperatur, max.: 125°C
Produktbreite: 1.25mm
SVHC: No SVHC (04-Feb-2026)
auf Bestellung 9668 Stücke:
Lieferzeit 14-21 Tag (e)
100+3.21 EUR
250+3.06 EUR
500+2.98 EUR
1000+2.7 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A1G5MTNTE Connectivity Passive ProductDescription: RES SMD 1.5G OHM 20% 1/8W 0805
Resistance: 1.5 GOhms
Height - Seated (Max): 0.020" (0.50mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 125°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Temperature Coefficient: ±1000ppm/°C
Package / Case: 0805 (2012 Metric)
Tolerance: ±20%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A20GNTNCGS - TE CONNECTIVITYDescription: CGS - TE CONNECTIVITY - RH73X2A20GNTN - Chipwiderstand, Oberflächenmontage, Dickschicht, 20 Gohm, ± 30%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: YES
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 125mW
Widerstandstyp: Hochspannung
Widerstand: 20Gohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 30%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: RH Series
productTraceability: No
Betriebstemperatur, max.: 125°C
Produktbreite: 1.25mm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
30+8.45 EUR
50+7.45 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A20GNTNTE Connectivity Passive ProductDescription: RES SMD 20G OHM 30% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±30%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.020" (0.50mm)
Resistance: 20 GOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A20GNTNTE Connectivity / HolsworthyThick Film Resistors - SMD RH73 2A 20G 30% 1000PPM
auf Bestellung 2112 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.07 EUR
10+9.81 EUR
50+8.73 EUR
100+8.43 EUR
250+8.4 EUR
500+8.38 EUR
1000+7.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A33GKTNTE Connectivity / HolsworthyThick Film Resistors - SMD RH73 2A 33G
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A33GKTNTE Connectivity Passive ProductDescription: RES SMD 33G OHM 10% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.020" (0.50mm)
Resistance: 33 GOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GN
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTNTE Connectivity Passive ProductDescription: RES SMD 50G OHM 30% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±30%
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.020" (0.50mm)
Resistance: 50 GOhms
auf Bestellung 5483 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.9 EUR
10+7.57 EUR
25+7.03 EUR
50+6.72 EUR
100+6.49 EUR
250+6.24 EUR
500+6.22 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTN
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTNTE CONNECTIVITY - CGSDescription: TE CONNECTIVITY - CGS - RH73X2A50GNTN - Chipwiderstand, Oberflächenmontage, 50 Gohm, ± 30%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
euEccn: NLR
rohsCompliant: YES
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 125mW
Widerstandstyp: Hochspannung
isCanonical: N
Widerstand: 50Gohm
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 30%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 2.01mm
SVHC: No SVHC (04-Feb-2026)
Produktpalette: RH73 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Nennspannung: 100V
Betriebstemperatur, max.: 125°C
Produktbreite: 1.25mm
auf Bestellung 3187 Stücke:
Lieferzeit 14-21 Tag (e)
100+6.49 EUR
250+6.26 EUR
500+5.81 EUR
1000+5.46 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTNTE Connectivity Passive ProductDescription: RES SMD 50G OHM 30% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±30%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.079" L x 0.047" W (2.00mm x 1.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.020" (0.50mm)
Resistance: 50 GOhms
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.97 EUR
2000+5.88 EUR
3000+5.83 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTNTE CONNECTIVITY - CGSDescription: TE CONNECTIVITY - CGS - RH73X2A50GNTN - Chipwiderstand, Oberflächenmontage, 50 Gohm, ± 30%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
euEccn: NLR
rohsCompliant: YES
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 125mW
Widerstandstyp: Hochspannung
isCanonical: Y
Widerstand: 50Gohm
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 30%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 2.01mm
SVHC: No SVHC (04-Feb-2026)
Produktpalette: RH73 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Nennspannung: 100V
Betriebstemperatur, max.: 125°C
Produktbreite: 1.25mm
auf Bestellung 3187 Stücke:
Lieferzeit 14-21 Tag (e)
24+10.5 EUR
50+7.18 EUR
100+6.49 EUR
250+6.26 EUR
500+5.81 EUR
1000+5.46 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2A50GNTNTE Connectivity / HolsworthyThick Film Resistors - SMD RH73 2A 50G 30% 1000PPM
auf Bestellung 3421 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.01 EUR
10+7.66 EUR
25+7.14 EUR
50+7.06 EUR
100+6.81 EUR
250+6.58 EUR
500+6.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2B10GKTNTE CONNECTIVITY - CGSDescription: TE CONNECTIVITY - CGS - RH73X2B10GKTN - Chipwiderstand, Oberflächenmontage, 10 Gohm, ± 10%, 250 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 1206 [Metrisch 3216]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 250mW
Widerstandstyp: Hochspannung
isCanonical: N
Widerstand: 10Gohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 10%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 3.2mm
euEccn: NLR
Produktpalette: RH73 Series
productTraceability: No
Nennspannung: 200V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.6mm
SVHC: No SVHC (04-Feb-2026)
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
100+4.61 EUR
250+4.52 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2B10GKTNTE Connectivity / HolsworthyThick Film Resistors - SMD RH73 2B 10G 10% 1000PPM
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.31 EUR
10+7.22 EUR
25+7.2 EUR
50+5.57 EUR
100+5.4 EUR
500+5.37 EUR
1000+4.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2B10GKTNTE Connectivity Passive ProductDescription: RES SMD 10G OHM 10% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±1000ppm/°C
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 125°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.020" (0.50mm)
Resistance: 10 GOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH73X2B10GKTNCGS - TE CONNECTIVITYDescription: CGS - TE CONNECTIVITY - RH73X2B10GKTN - Chipwiderstand, Oberflächenmontage, 10 Gohm, ± 10%, 250 mW, 1206 [Metrisch 3216]
tariffCode: 85332100
euEccn: NLR
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 1206 [Metrisch 3216]
Widerstandstechnologie: Dickschichtwiderstand
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Nennleistung: 250mW
Widerstandstyp: Hochspannung
isCanonical: Y
Widerstand: 10Gohm
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 10%
Temperaturkoeffizient: ± 1000ppm/°C
Produktlänge: 3.2mm
SVHC: No SVHC (04-Feb-2026)
Produktpalette: RH73 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Nennspannung: 200V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.6mm
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
28+9.15 EUR
50+5.52 EUR
100+4.9 EUR
250+4.66 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH74-100M
auf Bestellung 1096 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RH745DremelDescription: 1-3/4" SDS-MAX COMBINATION HAMME
Packaging: Bulk
Tool Type: Rotary Hammer
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RH75R0JS10N
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RH76001ATC
auf Bestellung 175 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RH7E04BBJFRATCBROHMDescription: ROHM - RH7E04BBJFRATCB - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 7500 µohm, DFN3333, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 7500µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
100+3.27 EUR
102+2.11 EUR
500+1.77 EUR
1000+1.57 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7E04BBJFRATCBRohm SemiconductorDescription: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
10+2.56 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.33 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7E04BBJFRATCBROHMDescription: ROHM - RH7E04BBJFRATCB - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 7500 µohm, DFN3333, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 75W
Bauform - Transistor: DFN3333
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7500µohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
46+5.52 EUR
71+3.3 EUR
102+2.12 EUR
500+1.78 EUR
1000+1.54 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7E04BBJFRATCBRohm SemiconductorDescription: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7G04BBJFRATCBRohm SemiconductorDescription: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7G04BBJFRATCBRohm SemiconductorDescription: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
10+2.58 EUR
100+1.75 EUR
500+1.4 EUR
1000+1.34 EUR
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RH7G04BBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.18 EUR
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RH7G04BBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+2.65 EUR
100+1.81 EUR
500+1.44 EUR
1000+1.39 EUR
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RH7G04CBJFRATCBRohm SemiconductorDescription: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.61 EUR
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500+1.24 EUR
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RH7G04CBJFRATCBROHM SemiconductorMOSFETs Pch -40V -40A, DFN3333T8LSAB, Power MOSFET for Automotive
Produkt ist nicht verfügbar
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RH7G04CBJFRATCBRohm SemiconductorDescription: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RH7G04CBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
10+2.43 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.24 EUR
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RH7G04CBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.06 EUR
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RH7G04CBKFRATCBROHM SemiconductorMOSFETs Nch 40V 40A, DFN3333T8LSAB, Power MOSFET for Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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RH7G04CBLFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.44 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.25 EUR
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RH7G04CBLFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RH7G04DBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.83 EUR
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RH7G04DBKFRATCBROHM SemiconductorMOSFETs DFN8 N CHAN 40V
auf Bestellung 2100 Stücke:
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2+3.17 EUR
10+2.01 EUR
100+1.34 EUR
500+1.09 EUR
1000+0.98 EUR
3000+0.83 EUR
6000+0.82 EUR
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RH7G04DBKFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
11+1.96 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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RH7G04DBLFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.83 EUR
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RH7G04DBLFRATCBRohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
11+1.95 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
Mindestbestellmenge: 7 Stücke
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RH7L03BBKFRATCBRohm SemiconductorDescription: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.12 EUR
11+1.99 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.96 EUR
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RH7L03BBKFRATCBRohm SemiconductorDescription: NCH 60V 35A, DFN3333T8LSAB, POWE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RH7L03BBKFRATCBROHM SemiconductorMOSFETs DFN8 N CHAN 40V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.22 EUR
10+2.05 EUR
100+1.37 EUR
500+1.12 EUR
1000+1 EUR
3000+0.84 EUR
6000+0.83 EUR
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RH7L04BBKFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
5+4.3 EUR
10+2.75 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.46 EUR
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RH7L04BBKFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.23 EUR
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RH7L04BBLFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: DFN3333T8LSAB
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.3 EUR
10+2.75 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.46 EUR
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RH7L04BBLFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.23 EUR
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RH7L04CBKFRATCBROHM SemiconductorMOSFETs DFN8 N CHAN 60V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.8 EUR
10+2.4 EUR
100+1.67 EUR
500+1.42 EUR
1000+1.26 EUR
3000+1.07 EUR
6000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RH7L04CBKFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.72 EUR
10+2.38 EUR
100+1.61 EUR
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RH7L04CBKFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7L04CBLFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RH7L04CBLFRATCBRohm SemiconductorDescription: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.44 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.25 EUR
Mindestbestellmenge: 6 Stücke
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