Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP31D7L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.58A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7L-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | auf Bestellung 526665 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7L-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.58A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7L-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT23 T&R 3K | auf Bestellung 40040 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7L-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 525000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LDW-13 | Diodes Incorporated | Description: MOSFET 2P-CH 0.55A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LDW-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.55A 6-Pin SOT-363 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDW-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -440mA; Idm: -2.4A; 400mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V 30V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDW-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.55A 6-Pin SOT-363 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDW-13 | Diodes Incorporated | Description: MOSFET 2P-CH 0.55A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LDW-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.55A 6-Pin SOT-363 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDW-7 | DIODES INC. | Description: DIODES INC. - DMP31D7LDW-7 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 550 mA, 550 mA, 0.5 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 550mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 550mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.5ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1405 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDW-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.55A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDW-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -440mA; Idm: -2.4A; 400mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDW-7 | DIODES INC. | Description: DIODES INC. - DMP31D7LDW-7 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 550 mA, 550 mA, 0.5 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 550mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 550mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.5ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1405 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SOT363 T&R 3K | auf Bestellung 32811 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LDWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDWQ-13 | Diodes Incorporated | Description: MOSFET 2P-CH 30V 0.55A SOT363 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LDWQ-7 | DIODES INC. | Description: DIODES INC. - DMP31D7LDWQ-7 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 550 mA, 550 mA, 0.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 550mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 550mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.5ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LDWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V 30V SOT363 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LDWQ-7 | DIODES INC. | Description: DIODES INC. - DMP31D7LDWQ-7 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 550 mA, 550 mA, 0.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 550mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 550mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.5ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LFB-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X1-DFN1006 Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LFB-7B | Diodes Zetex | MOSFET BVDSS: 25V30V X1-DFN1006-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LFB-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V X1-DFN1006-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LFBQ-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V X1-DFN1006-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LFBQ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X1-DFN1006 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X1-DFN1006-3 | auf Bestellung 170000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LFBQ-7B | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LQ-13 | Diodes Zetex | MOSFET BVDSS: 25V30V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LQ-7 | Diodes Zetex | MOSFET BVDSS: 25V30V SOT23 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LT-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LT-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SOT523 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V 30V SOT523 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LT-7 | Diodes Zetex | DMP31D7LT-7 | auf Bestellung 171000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT523 T&R Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 260mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT523 T&R 3K | auf Bestellung 2678 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LV-13 | Diodes Incorporated | Diodes Inc. MOSFET BVDSS: 8V~24V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LVQ-13 | Diodes Incorporated | Description: MOSFETBVDSS:8V~24VSOT563T&R10K Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LVQ-13 | Diodes Incorporated | Diodes Inc. MOSFET BVDSS: 8V~24V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LVQ-13 | Diodes Incorporated | Description: MOSFETBVDSS:8V~24VSOT563T&R10K Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LVQ-7 | Diodes Incorporated | Description: MOSFETBVDSS:8V~24VSOT563T&R3K Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LVQ-7 | Diodes Incorporated | Description: MOSFETBVDSS:8V~24VSOT563T&R3K Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LVQ-7 | Diodes Incorporated | Diodes Inc. MOSFET BVDSS: 8V~24V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LW-13 | Diodes Zetex | DMP31D7LW-13 | auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP31D7LW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SOT323 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V SOT323 Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V SOT323 T&R 3K | auf Bestellung 8961 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | auf Bestellung 125798 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D7LWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 290mW Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP31D7LWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 290mW Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4S | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4S-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4S-13 | Diodes Incorporated | MOSFETs P-Ch ENH FET -30V 2.4Ohm -10V -300mA | auf Bestellung 14645 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4S-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4S-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 300MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 365306 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4S-13 | Diodes Zetex | Trans MOSFET P-CH 30V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4S-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 300MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 340000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4S-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 300MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4S-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4S-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 216000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4S-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 300MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V | auf Bestellung 66050 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4S-7 | Diodes Incorporated | MOSFETs 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | auf Bestellung 17356 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4SFB-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 400MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4SFB-7B | DIODES INC. | Description: DIODES INC. - DMP32D4SFB-7B - Leistungs-MOSFET, p-Kanal, 30 V, 400 mA, 2.4 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.3V Verlustleistung: 1.2W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2.4ohm | auf Bestellung 5977 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SFB-7B | Diodes Zetex | Trans MOSFET P-CH 30V 0.5A 3-Pin X1-DFN T/R | auf Bestellung 5847 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SFB-7B | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.4A; 0.5W; X1-DFN1006-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -400mA Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4SFB-7B | Diodes Incorporated | MOSFETs 30V P-CH MOSFET | auf Bestellung 385 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4SFB-7B | Diodes Zetex | Trans MOSFET P-CH 30V 0.5A 3-Pin X1-DFN T/R | auf Bestellung 5847 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SFB-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 400MA 3DFN Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D4SFB-7B | DIODES INC. | Description: DIODES INC. - DMP32D4SFB-7B - Leistungs-MOSFET, p-Kanal, 30 V, 400 mA, 2.4 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 2.3V Verlustleistung: 1.2W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2.4ohm | auf Bestellung 5977 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SFB-7B Транзистор Produktcode: 221984
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMP32D4SW-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.25A 3-Pin SOT-323 T/R | auf Bestellung 2859 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SW-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 250MA SOT323 Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) | auf Bestellung 587788 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4SW-7 | Diodes Incorporated | MOSFETs 30V P-CH MOSFET | auf Bestellung 18289 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4SW-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.25A 3-Pin SOT-323 T/R | auf Bestellung 2859 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SW-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 250MA SOT323 Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 585000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D4SW-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.25A 3-Pin SOT-323 T/R | auf Bestellung 615000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP32D4SW-7 | Diodes Zetex | Trans MOSFET P-CH 30V 0.25A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D5LFA-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 300MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.9 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D5LFA-7B | Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D5SFB-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 400MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Vgs (Max): ±25V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D5SFB-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30 | auf Bestellung 12670 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D5SFB-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 400MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V | auf Bestellung 11877 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D8UFZ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DFN0606 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V | auf Bestellung 13052 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D8UFZ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DFN0606 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D8UFZ-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V X2-DFN0606-3 T and R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D9UDA-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 9320 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UDAQ-7B | Diodes Incorporated | Description: MOSFET 2P-CH 30V 0.22A 6DFN Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UFA-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V X2-DFN0806-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D9UFA-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DFN0806 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP32D9UFO-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DFN0604 Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: X2-DFN0604-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) | auf Bestellung 369950 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UFO-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V X2-DFN0604-3 T&R 10K | auf Bestellung 9950 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UFO-7B | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DFN0604 Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: X2-DFN0604-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) | auf Bestellung 360000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UFZ-7B | Diodes Incorporated | Description: MOSFET P-CH 30V 200MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22.5 pF @ 15 V | auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP32D9UFZ-7B | Diodes Incorporated | MOSFETs P-Ch 30V 0.35VnC Enh Mode FET -0.2A | auf Bestellung 5176 Stücke: Lieferzeit 10-14 Tag (e) |
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