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PJQ4594P-AU_R2_002A1PanjitMOSFETs 150V N-Channel Enhancement Mode MOSFET
auf Bestellung 4634 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.73 EUR
10+2.06 EUR
100+1.59 EUR
500+1.36 EUR
1000+1.11 EUR
2500+1.04 EUR
5000+1 EUR
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PJQ4602-R1-00001PanjitMOSFETs
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PJQ4602_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 30V 6.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 17.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: DFN3030B-8
Part Status: Not For New Designs
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PJQ4606-R1-00001PanjitMOSFETs
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PJQ4606_R1_00001PanjitMOSFETs 30V Complementary Enhancement Mode MOSFET
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PJQ4606_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 30V 7.6A 8DFN
Part Status: Not For New Designs
Supplier Device Package: DFN3030B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta), 18W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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PJQ4670AP_R2_00201PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4848P-AU_R2_000A1Panjit International Inc.Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
auf Bestellung 15000 Stücke:
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11+2.05 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.58 EUR
2000+0.55 EUR
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PJQ4848P-AU_R2_000A1PanjitMOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 5246 Stücke:
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2+2.24 EUR
10+1.39 EUR
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PJQ4848P-AU_R2_000A1Panjit International Inc.Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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PJQ4848P_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
auf Bestellung 3705 Stücke:
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17+1.24 EUR
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1000+0.61 EUR
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PJQ4848P_R2_00001Panjit International Inc.Description: 40V DUAL N-CHANNEL ENHANCEMENT M
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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PJQ4848P_R2_00001PanjitMOSFET /4848/TR/13"/HF/5K/DFN3333B-8L/MOS/DFN/NFET-40FQMN//PJ/DFN3333B8L-AS01/PJQ4848P-ASC8/DFN33338L-AS01
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PJQ5410_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1452 Stücke:
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11+1.95 EUR
18+1.21 EUR
50+0.89 EUR
100+0.79 EUR
500+0.61 EUR
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PJQ5410_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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PJQ5411-R2-00001PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP
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PJQ5411_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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PJQ5411_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
auf Bestellung 6655 Stücke:
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PJQ5411_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
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4+1.07 EUR
10+0.95 EUR
100+0.65 EUR
500+0.55 EUR
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3000+0.4 EUR
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PJQ5412-R2-00001PanjitMOSFETs DFN5060 N CHAN 30V
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PJQ5412_R2_00001PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFET
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PJQ5412_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ5412_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2969 Stücke:
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15+1.49 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.4 EUR
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PJQ5413-R2-00001PanjitMOSFETs
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PJQ5413_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
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PJQ5413_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
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PJQ5419-R2-00001PanjitMOSFETs
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PJQ5419_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
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PJQ5419_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
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PJQ5420_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJQ5420_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ5423-AU-R2-000A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP
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PJQ5423-R2-00001PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP
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PJQ5423_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 2943 Stücke:
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10+2.18 EUR
16+1.37 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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PJQ5423_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ5424-R2-00001PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMN
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PJQ5424_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Produkt ist nicht verfügbar
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PJQ5424_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 2160 Stücke:
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10+2.12 EUR
16+1.33 EUR
50+0.99 EUR
100+0.87 EUR
500+0.68 EUR
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PJQ5424_R2_00001PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFET
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PJQ5425_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
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PJQ5425_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET
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PJQ5427-R2-00001PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-30FKMP
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PJQ5427_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5427_R2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJQ5427_R2_006A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
Produkt ist nicht verfügbar
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PJQ5428_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5428_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5431E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5431E-AU_R2_006A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2942 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+1.55 EUR
100+1.02 EUR
500+0.95 EUR
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PJQ5431E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 388 Stücke:
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8+2.7 EUR
13+1.7 EUR
100+1.13 EUR
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PJQ5433E-AU_R2_006A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2809 Stücke:
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2+2.39 EUR
10+1.11 EUR
100+0.99 EUR
500+0.81 EUR
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PJQ5433E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5433E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
14+1.52 EUR
50+1.13 EUR
100+1 EUR
500+0.79 EUR
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PJQ5433E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.98 EUR
12+1.88 EUR
50+1.4 EUR
100+1.25 EUR
500+0.98 EUR
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PJQ5433E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
Produkt ist nicht verfügbar
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PJQ5433E_R2_00201PanjitMOSFETs 30V P-Channel Standard Trench MOSFET
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PJQ5435E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
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11+2.07 EUR
17+1.3 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.6 EUR
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PJQ5435E-AU_R2_006A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2990 Stücke:
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2+1.89 EUR
10+1.18 EUR
100+0.77 EUR
500+0.64 EUR
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PJQ5435E-AU_R2_006A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
Produkt ist nicht verfügbar
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PJQ5435E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5435E_R2_00201PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
Produkt ist nicht verfügbar
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PJQ5435E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.64 EUR
13+1.67 EUR
50+1.24 EUR
100+1.09 EUR
500+0.86 EUR
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PJQ5435E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.73 EUR
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PJQ5435E_R2_00201PanjitMOSFETs 30V P-Channel Standard Trench MOSFET
Produkt ist nicht verfügbar
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PJQ5437E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5437E-AU_R2_006A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2400 Stücke:
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2+1.93 EUR
10+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.6 EUR
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PJQ5437E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
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11+1.96 EUR
18+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
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PJQ5437E_R2_00201PanjitMOSFETs 30V P-Channel Standard Trench MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5437E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.65 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5437E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
14+1.51 EUR
50+1.12 EUR
100+1 EUR
500+0.77 EUR
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PJQ5439E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.84 EUR
19+1.14 EUR
100+0.75 EUR
500+0.57 EUR
1000+0.51 EUR
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PJQ5439E-AU_R2_006A1Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5439E-AU_R2_006A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2782 Stücke:
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2+1.8 EUR
10+0.83 EUR
100+0.74 EUR
500+0.56 EUR
6000+0.55 EUR
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PJQ5439E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Cut Tape (CT)
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.28 EUR
15+1.44 EUR
50+1.07 EUR
100+0.94 EUR
500+0.74 EUR
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PJQ5439E_R2_00201PanjitMOSFETs 30V P-Channel Standard Trench MOSFET
auf Bestellung 2814 Stücke:
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2+2.09 EUR
10+1.31 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.63 EUR
3000+0.54 EUR
6000+0.5 EUR
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PJQ5439E_R2_00201Panjit International Inc.Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5440-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4956 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.22 EUR
100+2.2 EUR
500+1.76 EUR
1000+1.63 EUR
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PJQ5440-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.45 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5440-R2-00001PanjitMOSFET DFN5060-8L/MOS/DFN/NFET-40FKMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5440_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5440_R2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5440_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2914 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.58 EUR
10+2.27 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.11 EUR
Mindestbestellmenge: 6 Stücke
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PJQ5442-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5442-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 99.3W (Tc)
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
12+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 8 Stücke
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PJQ5442_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.24 EUR
15+1.4 EUR
100+0.93 EUR
500+0.71 EUR
1000+0.64 EUR
Mindestbestellmenge: 10 Stücke
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PJQ5442_R2_00001PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.07 EUR
10+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
3000+0.51 EUR
6000+0.49 EUR
Mindestbestellmenge: 2 Stücke
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PJQ5442_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5443-AU-R2-000A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5443-AU_R2_000A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.49 EUR
14+1.56 EUR
100+1.04 EUR
500+0.8 EUR
1000+0.73 EUR
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PJQ5443-AU_R2_000A1PanjitMOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.78 EUR
10+1.57 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.76 EUR
3000+0.69 EUR
6000+0.67 EUR
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PJQ5443-AU_R2_000A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.63 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5443-AU_R2_000A1 Transistor
Produktcode: 210852
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Transistoren > Transistoren P-Kanal-Feld
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PJQ5443-R2-00001PanjitMOSFETs
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Im Einkaufswagen  Stück im Wert von  UAH
PJQ5443_R2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6761 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 10 Stücke
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PJQ5443_R2_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5443_R2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.54 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5444_R2_00001Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5445-AU-R2-000A1PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5445-AU_R2_000A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5445-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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