Produkte > PDT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| PDTD113ZU-QF | Nexperia | Bipolar Transistors - BJT PDTD113ZU-Q/SOT323/SC-70 | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZU-QX | Nexperia | Bipolar Transistors - BJT PDTD113ZU-Q/SOT323/SC-70 | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZU-QX | Nexperia USA Inc. | Description: PDTD113ZU-Q/SOT323/SC-70 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZU115 | NXP USA Inc. | Description: 500 MA, 50 V NPN RESISTOR-EQUIPP Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 5340 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZU135 | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V 0.5A Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUF | Nexperia | Digital Transistors SOT323 50V .5A NPN RET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUF | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUF | Nexperia | Trans Digital BJT NPN 50V 0.5A 425mW 3-Pin SC-70 T/R Automotive AEC-Q101 | auf Bestellung 8620 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD113ZUX | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.3W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 225MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUX | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Resistors Included: R1 and R2 Qualification: AEC-Q100 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 225 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUX | Nexperia | Trans Digital BJT NPN 50V 0.5A 425mW 3-Pin SC-70 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD113ZUX | Nexperia | Digital Transistors SOT323 50V .5A NPN R ET | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD113ZUX | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Resistors Included: R1 and R2 Qualification: AEC-Q100 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 225 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EQA147 | NXP USA Inc. | Description: TRANS PREBIAS Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 940 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114EQA147 | NXP | Description: NXP - PDTD114EQA147 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EQAZ | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 940mW Automotive 3-Pin DFN-D EP | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EQAZ | Nexperia USA Inc. | Description: TRANS PREBIAS Packaging: Bulk | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114EQAZ | Nexperia | Digital Transistors 50 V, 500 mA NPN resistor-equipped transistors | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EQAZ | NEXPERIA | Description: NEXPERIA - PDTD114EQAZ - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EQAZ | Nexperia | Trans Digital BJT NPN 50V 500mA 940mW Automotive AEC-Q101 3-Pin DFN-D EP T/R | auf Bestellung 39978 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114ET | PHILIPS | 04+ SOT23 | auf Bestellung 21100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ET-QR | Nexperia | Bipolar Transistors - BJT PDTD114ET-Q/SOT23/TO-236AB | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ET-QVL | Nexperia | Bipolar Transistors - BJT PDTD114ET-Q/SOT23/TO-236AB | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ET215 | NXP USA Inc. | Description: 500 MA 50V NPN RESISTOR-EQUIPP Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETR | NEXPERIA | Description: NEXPERIA - PDTD114ETR - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 30740 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114ETR | Nexperia | Digital Transistors SOT23 50V .5A NPN RET | Produkt ist nicht verfügbar | Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETR | Nexperia | Trans Digital BJT NPN 50V 500mA 460mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETR | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETR | Nexperia | Trans Digital BJT NPN 50V 500mA 460mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114ETR | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Resistors Included: R1 and R2 Qualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 225 MHz Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: TO-236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 2520 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114ETVL | Nexperia | Trans Digital BJT NPN 50V 500mA 460mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETVL | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114ETVL | Nexperia | Digital Transistors 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm | Produkt ist nicht verfügbar | Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EU | Nexperia | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| PDTD114EU-QX | Nexperia USA Inc. | Description: PDTD114EU-Q/SOT323/SC-70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EU-QX | Nexperia | Bipolar Transistors - BJT 50 V, 500 mA NPN resistor-equipped transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EU115 | NXP | Description: NXP - PDTD114EU115 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 28286 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EU115 | NXP USA Inc. | Description: TRANS PREBIAS Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 28286 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114EU135 | NXP | Description: NXP - PDTD114EU135 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 30287 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EU135 | NXP USA Inc. | Description: TRANS PREBIAS Qualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 225 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Resistors Included: R1 and R2 Package / Case: SC-70, SOT-323 Part Status: Active Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EUF | Nexperia | Digital Transistors SOT323 50V .5A NPN RET | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EUF | Nexperia | Trans Digital BJT NPN 50V 0.5A 425mW 3-Pin SC-70 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EUF | NEXPERIA | Description: NEXPERIA - PDTD114EUF - RF TRANSISTOR MSL: MSL 1 - unbegrenzt SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EUF | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD114EUF | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 425mW Automotive AEC-Q101 3-Pin SC-70 T/R | auf Bestellung 30287 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EUX | Nexperia | Digital Transistors SOT323 50V .5A NPN R ET | auf Bestellung 4729 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114EUX | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | auf Bestellung 3362 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD114EUX | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 425mW Automotive 3-Pin SC-70 T/R | auf Bestellung 28286 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD114EUX | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EK,115 | NXP USA Inc. | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Resistors Included: R1 and R2 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SMT3; MPAK DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EQA147 | NXP USA Inc. | Description: TRANS PREBIAS Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Qualification: AEC-Q101 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 210 MHz Power - Max: 940 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Packaging: Bulk | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EQA147 | NXP | Description: NXP - PDTD123EQA147 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EQAZ | NEXPERIA | Description: NEXPERIA - PDTD123EQAZ - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EQAZ | Nexperia | Trans Digital BJT NPN 50V 0.5A 940mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 | auf Bestellung 29900 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EQAZ | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V 0.5A 3DFN Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 210 MHz Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EQAZ | Nexperia | Digital Transistors PDTD123EQA/SOT1215/DFN1010D-3 | auf Bestellung 4901 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EQAZ | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 940mW Automotive 3-Pin DFN-D EP | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EQAZ | Nexperia USA Inc. | Description: TRANS PREBIAS Packaging: Bulk Part Status: Active | auf Bestellung 29900 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EQAZ | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 940mW Automotive 3-Pin DFN-D EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123ES,126 | NXP USA Inc. | Description: TRANS PREBIAS NPN 50V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET,215 | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Resistors Included: R1 and R2 Qualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: TO-236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET,215 | Nexperia | Trans Digital BJT NPN 50V 0.5A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 28000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123ET,215 | NEXPERIA | Description: NEXPERIA - PDTD123ET,215 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 2.2kohm isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 2.2kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Dauerkollektorstrom: 500mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (25-Jun-2025) | auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123ET,215 | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Resistors Included: R1 and R2 Part Status: Active Supplier Device Package: TO-236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET,215 | NXP/Nexperia/We-En | Транзистор цифровий, Тип стр. = NPN, Uceo, В = 50, Ic = 500 мА, hFE = 40 @ 50 мA, 5 В, Icutoff-max = 500 нА, R1, кОм = 2,2, R2, кОм = 2,2, Uceo(sat), В @ Ic, Ib = 0,3 @ 2,5 мA, 50 мА, Р, Вт = 0,25, Тексп, °C = -65...+150, Тип монт. = smd,... Транзистори К Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET,215 | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Current gain: 40 Kind of package: 7 inch reel; tape Base-emitter resistor: 2.2kΩ Case: SOT23; TO236AB Collector current: 0.5A Mounting: SMD | auf Bestellung 14574 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123ET,215 | Nexperia | Digital Transistors PDTD123ET/SOT23/TO-236AB | auf Bestellung 434 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123ET,215 | NXP USA Inc. | Description: TRANS PREBIAS NPN 250MW TO236AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET-QR | NEXPERIA | Description: NEXPERIA - PDTD123ET-QR - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123ET-QR | Nexperia | Bipolar Transistors - BJT PDTD123ET-Q/SOT23/TO-236AB | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET-QR | Nexperia USA Inc. | Description: PDTD123ET-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123ET-QR | NEXPERIA | Description: NEXPERIA - PDTD123ET-QR - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 2.2kohm euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Dauerkollektorstrom: 500mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (25-Jun-2025) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EU-QX | Nexperia | Bipolar Transistors - BJT PDTD123EU-Q/SOT323/SC-70 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EU-QX | Nexperia USA Inc. | Description: PDTD123EU-Q/SOT323/SC-70 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EU115 | NXP | Description: NXP - PDTD123EU115 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 24860 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EU115 | NXP USA Inc. | Description: TRANS PREBIAS Qualification: AEC-Q101 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 225 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk | auf Bestellung 24860 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EU135 | NXP USA Inc. | Description: TRANS PREBIAS Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8036 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EU135 | NXP | Description: NXP - PDTD123EU135 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EUF | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 425mW Automotive 3-Pin SC-70 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EUF | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | auf Bestellung 49270 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EUF | NEXPERIA | Description: NEXPERIA - PDTD123EUF - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EUF | Nexperia | Digital Transistors SOT323 50V .5A NPN RET | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EUF | Nexperia | Trans Digital BJT NPN 50V 0.5A 425mW 3-Pin SC-70 T/R Automotive AEC-Q101 | auf Bestellung 49270 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EUF | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EUX | NEXPERIA | Description: NEXPERIA - PDTD123EUX - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 2.2 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SC-70 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: PDTD1xxxU Widerstandsverhältnis R1/R2: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EUX | Nexperia | Digital Transistors SOT323 50V .5A NPN R ET | auf Bestellung 1541 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123EUX | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 425mW Automotive 3-Pin SC-70 T/R | auf Bestellung 24860 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123EUX | NEXPERIA | Description: NEXPERIA - PDTD123EUX - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123EUX | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123TK | auf Bestellung 3470 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| PDTD123TK,115 | NXP USA Inc. | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123TS,126 | NXP USA Inc. | Description: TRANS PREBIAS NPN 50V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| PDTD123TT,215 | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123TT,215 | Nexperia | Trans Digital BJT NPN 50V 0.5A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123TT,215 | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 Only | auf Bestellung 2840 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTD123TT,215 | NEXPERIA | Description: NEXPERIA - PDTD123TT,215 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 66968 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123TT,215 | NXP Semiconductors | Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123TT,215 | Nexperia | Trans Digital BJT NPN 50V 0.5A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTD123TT,215 | Nexperia USA Inc. | Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 Only | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
