Produkte > IPD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPDQ65R040CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V | auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 820µA Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 820µA Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | MOSFET AUTOMOTIVE_COOLMOS | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V | auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7XTMA1 | Infineon Technologies | MOSFET | auf Bestellung 750 Stücke: Lieferzeit 209-213 Tag (e) |
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| IPDQ65R060CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7 | Infineon Technologies | HIGH POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.08 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 223W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.08ohm | auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 223W (Tc) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 599 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.08 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 223W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.068 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.068 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 3604 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R099CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.099 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 186W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.099ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R099CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.099 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 186W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.099ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 29A Power dissipation: 186W Gate-source voltage: 20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V | auf Bestellung 209 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R099CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module | auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R125CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V | auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDSB-09-FWL-1M | Sure-Seal | Description: CABLE ASSY DB09 BLACK 1M Packaging: Box Contact Finish: Gold Color: Black, Individual (Round) Length: 3.28' (1.00m) Shielding: Unshielded Number of Positions: 9 Type: DB9 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Part Status: Active | auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDSB-09-MWL-1M | Sure-Seal | Description: CABLE ASSY DB09 BLACK 1M 2nd Connector: Individual Wire Leads 1st Connector: Plug, Male Pins Type: DB9 Number of Positions: 9 Shielding: Unshielded Length: 3.28' (1.00m) Color: Black, Individual (Round) Contact Finish: Gold Packaging: Box | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDSB-09F-SC | Sure-Seal Legacy | Description: RCPT DSUB 09P F SC Ingress Protection: IPX8 - Waterproof Termination: Solder Cup Flange Feature: Mating Side, Female Screwlock Contact Type: Signal Number of Rows: 3 Number of Positions: 15 Mounting Type: Panel Mount Current Rating (Amps): 2A Contact Finish: Gold Connector Type: Receptacle, Female Sockets Packaging: Box Part Status: Active Shell Material, Finish: Steel, Tin-Nickel Plated Connector Style: D-Type | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDSB-09M-SC | Sure-Seal | Description: RCPT DSUB 09P M SC Part Status: Active Shell Material, Finish: Steel, Tin-Nickel Plated Connector Style: D-Type Ingress Protection: IPX8 - Waterproof Termination: Solder Cup Flange Feature: Mating Side, Female Screwlock Contact Type: Signal Number of Rows: 3 Number of Positions: 15 Mounting Type: Panel Mount Current Rating (Amps): 2A Contact Finish: Gold Connector Type: Plug, Male Pins Packaging: Box | auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDSB-HD15-FWL-1M | Sure-Seal | Description: CA DSUB HD15P F 1.0 PVC | auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDSB-HD15-MWL-1M | Sure-Seal | Description: CA DSUB HD15P M 1.0 PVC | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDSB-HD15F-SC | Sure-Seal | Description: CONN D-SUB HD RCPT 15POS PNL MNT | auf Bestellung 99 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDSB-HD15M-SC | Sure-Seal | Description: CONN D-SUB HD PLUG 15POS PNL MNT | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |
