Produkte > UT6
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| UT6KB5TCR | Rohm Semiconductor | Trans MOSFET N-CH 40V 5A 8-Pin HUML T/R | auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KC5TCR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KC5TCR | ROHM Semiconductor | MOSFETs AECQ | auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3.5A 8DFN Supplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KC5TCR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KC5TCR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3.5A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) Supplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6KC5TCR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R | auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KC5TCR | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; 60V; 3.5A; 2W; DFN Type of transistor: N-MOSFET x2 Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: DFN Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 3.1nC Kind of channel: enhancement | auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 210 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6KE5TCR | Rohm Semiconductor | Trans MOSFET N-CH 100V 2A 8-Pin HUML T/R | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Configuration: 2 N-Channel (Dual) | auf Bestellung 6331 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Trans MOSFET N-CH 100V 2A 8-Pin HUML T/R | auf Bestellung 1185 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KE5TCR | ROHM Semiconductor | MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET | auf Bestellung 1017 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Trans MOSFET N-CH 100V 2A 8-Pin HUML T/R | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA2TCR Produktcode: 184866
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Lieblingsprodukt
| IC > IC andere | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UT6MA2TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 4A 8-Pin HUML EP T/R | auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA2TCR | ROHM Semiconductor | MOSFETs 30V Nch+Pch Middle Power MOSFET | auf Bestellung 7586 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 4A 8-Pin HUML EP T/R | auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 4A 8-Pin HUML EP T/R | auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA2TCR | Fairchild/ON Semiconductor | Транзистор польовий N+P, Udss, В = 30, Id = 4 А, Qg, нКл = 4,3, 6,7, Rds = 46, 70 мОм, Ugs(th) = 2,5, Р, Вт = 2, Тексп, °C = макс. +150, Тип монт. = SMD,... Транзистори Корпус: PowerUDFN-6 Од. вим: шт Anzahl je Verpackung: 3000 Stücke | verfügbar 18 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA2TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 4A 8-Pin HUML EP T/R | auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 183 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 37467 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 20V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 5436 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 1581 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA3TCR | ROHM Semiconductor | MOSFETs 20V Nch+Pch Si MOSFET | auf Bestellung 4397 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 4650 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 20V 5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 1581 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 5A/3.5A 8-Pin HUML T/R | auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | ROHM Semiconductor | MOSFETs 40V 5.0A/3.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET | auf Bestellung 1763 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 5A/3.5A 8-Pin HUML T/R | auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | ROHM | Description: ROHM - UT6MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 5 A, 3.5 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Description: MOSFET 40V 5A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 5A/3.5A 8-Pin HUML T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 5A/3.5A 8-Pin HUML T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MB5TCR | ROHM | Description: ROHM - UT6MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 5 A, 3.5 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Description: MOSFET 40V 5A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 2443 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MC5TCR | ROHM | Description: ROHM - UT6MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3.5 A, 2.5 A, 0.073 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.22ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.073ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2512 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Description: MOSFET 60V 3.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3.5A/2.5A 8-Pin HUML T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | ROHM | Description: ROHM - UT6MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3.5 A, 2.5 A, 0.073 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.22ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.073ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2512 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Description: MOSFET 60V 3.5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3.5A/2.5A 8-Pin HUML T/R | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | ROHM Semiconductor | MOSFETs 60V 3.5A/2.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET | auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3.5A/2.5A 8-Pin HUML T/R | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3.5A/2.5A 8-Pin HUML T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6ME5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 100V 2A/1A 8-Pin HUML | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6ME5TCR | ROHM Semiconductor | MOSFETs DFN 100V 2A DUAL CH | auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6ME5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V | auf Bestellung 9169 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6ME5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) Power - Max: 2W (Ta) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6R2392TTGE | ABB | Meter Sockets HORIZ MTRG 6-200A 4-TRM 2-LRG HBOPN CTR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |
