Produkte > DMG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | DIODES INC. | Description: DIODES INC. - DMG301NU-13 - Leistungs-MOSFET, n-Kanal, 25 V, 260 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 320mW Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 4ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 13766 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Incorporated | MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 18085 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-13 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 7001 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | auf Bestellung 16409 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23; ESD Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Power dissipation: 0.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Polarisation: unipolar Kind of channel: enhancement Version: ESD | auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Zetex | Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R | auf Bestellung 528000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG301NU-7 | Diodes Incorporated | Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V | auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-13 | Diodes Incorporated | MOSFETs 25V P-Ch Enh Mode FET -8Vgss 0.33W | auf Bestellung 12914 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Pulsed drain current: -0.5A Power dissipation: 0.45W Gate charge: 0.35nC Polarisation: unipolar Drain current: -0.14A Kind of channel: enhancement Drain-source voltage: -25V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 13Ω | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 32482 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-13 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V | auf Bestellung 44657 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | Diodes Incorporated | MOSFETs 25V P-Ch Enh FET 27.2pF 0.35nC | auf Bestellung 8809 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG302PU-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Pulsed drain current: -0.5A Power dissipation: 0.45W Gate charge: 0.35nC Polarisation: unipolar Drain current: -0.14A Kind of channel: enhancement Drain-source voltage: -25V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 13Ω | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG32240F028_02WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 350cd/m2 Interface: 18bit RGB; CAN; SD; TTL; UART Supply voltage: 3.6...5.5V DC Memory: 8MB FLASH Operating temperature: -10...60°C Colour: RGB Kind of controller: T5L0 Touchpad: none Window dimensions (H x W): 43.2x57.6mm Kind of display: graphical; matrix TN Display resolution: 240x320 Luminosity: 350cd/m2 Connector pinout layout: 1x50 Dimensions: 50.2x69.3x2.15mm Connection: 50pin No. of colours: 262k Illumination: LED Type of display: TFT Related items: HDL662S Screen size: 2.8" | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG32240F028_02WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 2.8"; 240x320; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Supply voltage: 3.6...5.5V DC Type of display: TFT Related items: HDL662S Screen size: 2.8" Colour: RGB Kind of controller: T5L0 Touchpad: resistance Operating temperature: -10...60°C Window dimensions (H x W): 43.2x57.6mm Kind of display: graphical; matrix TN Display resolution: 240x320 Luminosity: 300cd/m2 Memory: 8MB FLASH Connector pinout layout: 1x50 Dimensions: 50.2x69.3x3.75mm Connection: 50pin Interface: 18bit RGB; CAN; SD; TTL; UART No. of colours: 262k Illumination: LED | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 189000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 51033 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | MOSFETs 30V P-CH MOSFET | auf Bestellung 22887 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 On-state resistance: 85mΩ Mounting: SMD Pulsed drain current: -30A Power dissipation: 1.2W Gate charge: 25.1nC Polarisation: unipolar Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SC59 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | auf Bestellung 552000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSN-7 | Diodes Zetex | Trans MOSFET P-CH 30V 3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSN-7 | Diodes | P-Channel 30 V 3A (Ta) 800mW (Ta) Surface Mount SC-59-3 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SC-59-3 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 800mW Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SC59 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 On-state resistance: 85mΩ Mounting: SMD Pulsed drain current: -30A Power dissipation: 1.2W Gate charge: 25.1nC Polarisation: unipolar Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SC59 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | auf Bestellung 1002000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SC59 T&R 3K | auf Bestellung 2720 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1747 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3401LSNQ-7 | Diodes Zetex | MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3401LSNQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 187753 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Inc./Zetex | Trans MOSFET Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | MOSFETs FET BVDSS 25V 30V N-Ch 305pF 8.2nC | auf Bestellung 16365 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 85mΩ | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V | auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402L-7 | DIODES INC. | Description: DIODES INC. - DMG3402L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1.4W Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.052ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402L-7 N32. | DIODES/ZETEX | Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R DMG3402L-7 TDMG3402L-7 Diodes Anzahl je Verpackung: 500 Stücke | auf Bestellung 2390 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3402LQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 On-state resistance: 85mΩ Mounting: SMD Power dissipation: 1.4W Gate charge: 11.7nC Polarisation: unipolar Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: SOT23 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-7 | DIODES INC. | Description: DIODES INC. - DMG3402LQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3305 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3402LQ-7 | DIODES INC. | Description: DIODES INC. - DMG3402LQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 3305 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3402LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3402LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 127227 Stücke: Lieferzeit 290-294 Tag (e) |
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| DMG3402LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 On-state resistance: 85mΩ Mounting: SMD Power dissipation: 1.4W Gate charge: 11.7nC Polarisation: unipolar Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SOT23 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 On-state resistance: 35mΩ Mounting: SMD Pulsed drain current: 30A Power dissipation: 1.33W Gate charge: 13.2nC Polarisation: unipolar Drain current: 4.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SOT23 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23 On-state resistance: 35mΩ Mounting: SMD Power dissipation: 1.33W Polarisation: unipolar Drain current: 4.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT23 | auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 255000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3404L-7-ML | MOSLEADER | Description: N 30V 5.8A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 On-state resistance: 70mΩ Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Drain current: 2.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SOT23 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 7319 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 90000 Stücke: Lieferzeit 290-294 Tag (e) |
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| DMG3406L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 10235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 On-state resistance: 70mΩ Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Drain current: 2.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT23 | auf Bestellung 4427 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 768000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | DIODES INC. | Description: DIODES INC. - DMG3406L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 3.6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 770mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: DMG3406L productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.025ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3406L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3406L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 50mOhm 10V 3.6A | auf Bestellung 18794 Stücke: Lieferzeit 290-294 Tag (e) |
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| DMG3406L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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