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AO4202Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 19A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Produkt ist nicht verfügbar
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AO4202Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 19A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Produkt ist nicht verfügbar
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AO4202LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 19A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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AO4202_120Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 19A 8SOIC
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AO4240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 24A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 20 V
Produkt ist nicht verfügbar
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AO4240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 24A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 20 V
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AO4260Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 18A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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AO4260Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 30 V
Produkt ist nicht verfügbar
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AO4262EALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 2W; SO8; ESD
Case: SO8
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Drain current: 13A
Gate charge: 15nC
Version: ESD
On-state resistance: 6.5mΩ
Kind of channel: enhancement
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2447 Stücke:
Lieferzeit 14-21 Tag (e)
84+1.02 EUR
179+0.48 EUR
200+0.43 EUR
211+0.4 EUR
Mindestbestellmenge: 84 Stücke
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AO4262EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 16.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 30 V
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AO4262EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 16.5A 8-Pin SOIC T/R
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AO4262EALPHA&OMEGATrans MOSFET N-CH 60V 16.5A 8-Pin SOIC AO4262E TAO4262e
Anzahl je Verpackung: 50 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.02 EUR
Mindestbestellmenge: 50 Stücke
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AO4264Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AO4264Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
Produkt ist nicht verfügbar
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AO4264EALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; 2W; SO8; ESD
Mounting: SMD
Power dissipation: 2W
Gate charge: 7nC
Polarisation: unipolar
Version: ESD
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 9.8mΩ
Produkt ist nicht verfügbar
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AO4264EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 13.5A 8-Pin SOIC T/R
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AO4264EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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AO4264E
Produktcode: 170185
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Transistoren > MOSFET N-CH
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AO4264_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 12A 8SO
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AO4264_DELTAAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 12A 8SO
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AO4266Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 30 V
Produkt ist nicht verfügbar
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AO4266EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 11A 8-Pin SOIC T/R
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AO4266EALPHA&OMEGATrans MOSFET N-CH 60V 11A 8-Pin SOIC AO4266E TAO4266e
Anzahl je Verpackung: 100 Stücke
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Lieferzeit 7-14 Tag (e)
100+0.79 EUR
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AO4266EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 11A 8-Pin SOIC T/R
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AO4266EALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: 8.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 13.5mΩ
auf Bestellung 1752 Stücke:
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261+0.32 EUR
296+0.29 EUR
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AO4266EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 11A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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AO4268Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 19A 8-Pin SOIC T/R
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AO4268ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
auf Bestellung 3149 Stücke:
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82+1.04 EUR
129+0.65 EUR
147+0.58 EUR
163+0.52 EUR
500+0.5 EUR
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AO4268Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 60V 19A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4286Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
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AO4286Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 4A 8-Pin SOIC
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AO4286ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 1.6W
Drain current: 3A
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 5607 Stücke:
Lieferzeit 14-21 Tag (e)
327+0.26 EUR
400+0.21 EUR
451+0.19 EUR
506+0.17 EUR
3000+0.15 EUR
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AO4290AAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 15.5A 8-Pin SOIC T/R
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AO4290AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 15.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4292Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4292Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AO4292EALPHA&OMEGAN-Channel MOSFET 100V 8A 8SOIC AO4292E TAO4292e
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.95 EUR
Mindestbestellmenge: 50 Stücke
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AO4292EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AO4292EALPHA&OMEGAN-Channel MOSFET 100V 8A 8SOIC AO4292E TAO4292e
Anzahl je Verpackung: 50 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.95 EUR
Mindestbestellmenge: 40 Stücke
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AO4292EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4292EALPHA&OMEGAN-Channel MOSFET 100V 8A 8SOIC AO4292E TAO4292e
Anzahl je Verpackung: 50 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.95 EUR
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AO4292EAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 8A 8-Pin SOIC T/R
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AO4294Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 11.5A 8-Pin SOIC T/R
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AO4294Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 11.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 12876 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.45 EUR
10+2.19 EUR
100+1.46 EUR
500+1.15 EUR
1000+1.06 EUR
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AO4294Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 11.5A 8-Pin SOIC T/R
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AO4294Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 11.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AO4294AAlpha & Omega Semiconductor100V N-Channel AlphaSGT TM
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AO4294AAlpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4296Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
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AO4296Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4296ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.5A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Gate charge: 18.5nC
Polarisation: unipolar
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 8.3mΩ
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AO4302Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 15 V
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AO4302Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.6W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AO4304Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 15 V
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AO4304
Produktcode: 124519
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Transistoren > MOSFET N-CH
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AO4304Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 30V 18A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.6W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AO4304_001Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 30V 18A 8SOIC
Produkt ist nicht verfügbar
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AO4306Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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AO4307VISHAYSOT23
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4310Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 27A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AO4310Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 27A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AO4312Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 23A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AO4312Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 23A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AO4314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 20A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AO4314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 36V 20A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 18 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 36 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AO4322AO10+ SOT23
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4354Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
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Lieferzeit 10-14 Tag (e)
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
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AO4354Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
6000+0.48 EUR
9000+0.45 EUR
15000+0.43 EUR
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AO4354Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin SOIC
Produkt ist nicht verfügbar
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AO4354_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8SOIC
Produkt ist nicht verfügbar
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AO4400AOSMD
auf Bestellung 30000 Stücke:
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AO4401AOSMD
auf Bestellung 60000 Stücke:
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AO4402Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 20A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.92 EUR
6000+0.86 EUR
9000+0.82 EUR
Mindestbestellmenge: 3000 Stücke
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AO4402Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
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AO4402ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
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AO4402Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
auf Bestellung 278 Stücke:
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AO4402Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 20A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 11011 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.37 EUR
10+2.14 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.04 EUR
Mindestbestellmenge: 7 Stücke
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AO4402Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
auf Bestellung 278 Stücke:
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AO4402GAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 20A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
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AO4402GAlpha & Omega Semiconductor20V N-Channel MOSFET
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AO4402GALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
auf Bestellung 845 Stücke:
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100+0.86 EUR
142+0.61 EUR
236+0.36 EUR
264+0.32 EUR
500+0.29 EUR
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AO4402L
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4403ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhancement
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.38 EUR
162+0.52 EUR
184+0.46 EUR
202+0.42 EUR
500+0.39 EUR
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AO4403Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
Produkt ist nicht verfügbar
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AO4403Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
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AO4403AOSMOSFET P-CH 30V 6A 8SOIC Транзистори
Produkt ist nicht verfügbar
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AO4403LAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
Produkt ist nicht verfügbar
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AO4404AAOSMD
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4404ALAOSMD
auf Bestellung 48000 Stücke:
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AO4404BAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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AO4404BAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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AO4404BAOSN-MOSFET, unipolar, 30V, 7.1A, 2W, SO8 Транзистори
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AO4404BAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 8.5A 8-Pin SOIC
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AO4404BALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.1A; 2W; SO8
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 24mΩ
Drain current: 7.1A
Gate-source voltage: ±12V
Drain-source voltage: 30V
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
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421+0.2 EUR
477+0.18 EUR
532+0.15 EUR
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AO4404BL09+
auf Bestellung 656 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4404BLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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AO4404BL_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Produkt ist nicht verfügbar
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AO4404L
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
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AO4405AOSSO-8
auf Bestellung 32000 Stücke:
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AO4405Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 6A 8-Pin SOIC
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