Produkte > AOI

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
AOI11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Produkt ist nicht verfügbar
AOI11S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI1N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 1.3A TO251A
Produkt ist nicht verfügbar
AOI1N60LAlpha & Omega SemiconductorTRANS MOSFET N-CH 600V 1.3A 3-PIN(3+TAB) TO-251A T/R
Produkt ist nicht verfügbar
AOI1N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 1.3A TO251A
Produkt ist nicht verfügbar
AOI1R4A70ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI1R4A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 3.8A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Produkt ist nicht verfügbar
AOI1R4A70ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI206_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A TO251A
Produkt ist nicht verfügbar
AOI208Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A TO251A
Produkt ist nicht verfügbar
AOI21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 23A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 3566 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
70+ 1.43 EUR
140+ 1.04 EUR
560+ 0.87 EUR
1050+ 0.74 EUR
2030+ 0.66 EUR
Mindestbestellmenge: 16
AOI21357ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -180A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI21357ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -180A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AOI2210Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
auf Bestellung 3490 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2520C2R2JTARLITECHSMD 04+
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2520C2R2JTARLITECH04+ SMD
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2520CR22JT
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2520CR91JT2005+
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2606Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 14A/46A TO251A
Produkt ist nicht verfügbar
AOI2606
Produktcode: 168277		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
AOI2610Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 10A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
Produkt ist nicht verfügbar
AOI2610EALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI2610EALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AOI2610EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251A
Produkt ist nicht verfügbar
AOI2610EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI2614Alpha & Omega Semiconductor Inc.Description: MOSFET NCH 60V 35A TO251A
Produkt ist nicht verfügbar
AOI294AALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 15.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI294AAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI294AALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 15.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI296AALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 35W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 18.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3096 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.37 EUR
59+ 1.23 EUR
66+ 1.09 EUR
70+ 1.03 EUR
74+ 0.97 EUR
500+ 0.94 EUR
Mindestbestellmenge: 53
AOI296AALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 35W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 18.5nC
Kind of channel: enhanced
auf Bestellung 3096 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
59+ 1.23 EUR
66+ 1.09 EUR
70+ 1.03 EUR
74+ 0.97 EUR
500+ 0.94 EUR
Mindestbestellmenge: 53
AOI296AAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI2N60Alpha & Omega Semiconductor
auf Bestellung 3495 Stücke:
Lieferzeit 21-28 Tag (e)
AOI2N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2A TO251A
Produkt ist nicht verfügbar
AOI2N60AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2A
Produkt ist nicht verfügbar
AOI360A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
AOI360A70Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOI403Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI403
Produktcode: 144923		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
AOI403Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Produkt ist nicht verfügbar
AOI403ALPHA&OMEGATransistor P-Channel MOSFET; 30V; 25V; 8,5mOhm; 70A; 90W; -55°C ~ 175°C; AOI403 TAOI403
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.4 EUR
Mindestbestellmenge: 25
AOI409Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 26A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
AOI409ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI409ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI409Alpha & Omega SemiconductorTrans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI409Alpha & Omega SemiconductorTrans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI4102Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 8A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI4102Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8A TO251A
Produkt ist nicht verfügbar
AOI4126Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 7.5A/43A TO251A
Produkt ist nicht verfügbar
AOI4126ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: THT
Case: TO251A
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
AOI4126Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 43A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI4126ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: THT
Case: TO251A
Produkt ist nicht verfügbar
AOI4130Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI4130Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 6.5A TO251A
Produkt ist nicht verfügbar
AOI4144_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Produkt ist nicht verfügbar
AOI4146Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A TO251A
Produkt ist nicht verfügbar
AOI418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13.5A/36A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Produkt ist nicht verfügbar
AOI4184Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI4184Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 12A/50A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Produkt ist nicht verfügbar
AOI4184ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 25W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 27.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 878 Stücke:
Lieferzeit 7-14 Tag (e)
51+1.42 EUR
111+ 0.65 EUR
125+ 0.57 EUR
152+ 0.47 EUR
161+ 0.45 EUR
Mindestbestellmenge: 51
AOI4184ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 25W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 27.2nC
Kind of channel: enhanced
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
111+ 0.65 EUR
125+ 0.57 EUR
152+ 0.47 EUR
161+ 0.45 EUR
Mindestbestellmenge: 51
AOI4185ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -31A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of channel: enhanced
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
120+ 0.6 EUR
136+ 0.53 EUR
152+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 62
AOI4185Alpha & Omega SemiconductorTrans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
auf Bestellung 13470 Stücke:
Lieferzeit 14-21 Tag (e)
538+0.29 EUR
Mindestbestellmenge: 538
AOI4185Alpha & Omega SemiconductorTrans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
auf Bestellung 13496 Stücke:
Lieferzeit 14-21 Tag (e)
347+0.45 EUR
3500+ 0.35 EUR
Mindestbestellmenge: 347
AOI4185ALPHA&OMEGATransistor P-Channel MOSFET; 40V; 20V; 23mOhm; 40A; 62,5W; -55°C ~ 175°C; AOI4185 TAOI4185
Anzahl je Verpackung: 25 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.19 EUR
Mindestbestellmenge: 25
AOI4185Alpha & Omega SemiconductorTrans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
auf Bestellung 2986 Stücke:
Lieferzeit 14-21 Tag (e)
AOI4185Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 40V 40A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Produkt ist nicht verfügbar
AOI4185ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -31A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 635 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
120+ 0.6 EUR
136+ 0.53 EUR
152+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 62
AOI423ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -67A
Power dissipation: 45W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3436 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
107+ 0.67 EUR
120+ 0.6 EUR
148+ 0.49 EUR
152+ 0.47 EUR
Mindestbestellmenge: 59
AOI423Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI423Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 15A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Produkt ist nicht verfügbar
AOI423ALPHA & OMEGA SEMICONDUCTORCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -67A
Power dissipation: 45W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhanced
auf Bestellung 3436 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
107+ 0.67 EUR
120+ 0.6 EUR
148+ 0.49 EUR
152+ 0.47 EUR
Mindestbestellmenge: 59
AOI4286Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 4A/14A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
auf Bestellung 2989 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
21+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 18
AOI4286ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
On-state resistance: 68mΩ
Mounting: SMD
Case: TO251A
Drain current: 10A
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
117+ 0.61 EUR
Mindestbestellmenge: 76
AOI4286ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
On-state resistance: 68mΩ
Mounting: SMD
Case: TO251A
Drain current: 10A
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
117+ 0.61 EUR
173+ 0.41 EUR
Mindestbestellmenge: 76
AOI4286Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI442ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI442Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI442Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 7A TO251A
Produkt ist nicht verfügbar
AOI442Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI442ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI444Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI444Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 4A TO251A
Produkt ist nicht verfügbar
AOI444ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI444ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI468ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8.3A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 12.8nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI468ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8.3A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 12.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI468Alpha & Omega SemiconductorTrans MOSFET N-CH 300V 11.5A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI468Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
AOI472AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 18A/46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 15 V
Produkt ist nicht verfügbar
AOI482Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5A/32A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
AOI482Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 32A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI4C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO-252
Produkt ist nicht verfügbar
AOI4N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO251A
Produkt ist nicht verfügbar
AOI4N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI4S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
AOI4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Produkt ist nicht verfügbar
AOI4T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Produkt ist nicht verfügbar
AOI4T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Produkt ist nicht verfügbar
AOI508Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 22A/70A TO251A
Produkt ist nicht verfügbar
AOI508Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI510Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 70A TO251A
auf Bestellung 3288 Stücke:
Lieferzeit 21-28 Tag (e)
AOI510Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI510Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 70A TO251A
Produkt ist nicht verfügbar
AOI514Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 46A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI514Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/46A TO251A
Produkt ist nicht verfügbar
AOI516Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A TO251A
Produkt ist nicht verfügbar
AOI516_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
AOI516_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
AOI518Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A TO251A
Produkt ist nicht verfügbar
AOI518_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A
Produkt ist nicht verfügbar
AOI530Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/70A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Produkt ist nicht verfügbar
AOI538Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 34A
Produkt ist nicht verfügbar
AOI538Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI5N40ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
AOI5N40Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 400V 4.2A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
AOI5N40Alpha & Omega SemiconductorTrans MOSFET N-CH 400V 4.2A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI5N40ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI600A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 8A TO251A
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.12 EUR
10+ 2.8 EUR
100+ 2.18 EUR
500+ 1.8 EUR
1000+ 1.42 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 9
AOI66406ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Drain-source voltage: 40V
Drain current: 45A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 20.5W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO251A
Produkt ist nicht verfügbar
AOI66406ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Drain-source voltage: 40V
Drain current: 45A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 20.5W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO251A
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
AOI66406Alpha & Omega SemiconductorN-Channel MOSFET
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
AOI7N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO251A
Produkt ist nicht verfügbar
AOI7N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI7N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Produkt ist nicht verfügbar
AOI7S65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI7S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO251A
Produkt ist nicht verfügbar
AOI8N25Alpha & Omega SemiconductorTrans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI8N25Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 250V 8A TO251A
Produkt ist nicht verfügbar
AOI8N25ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI8N25ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI950A70ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI950A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 5A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V
Power Dissipation (Max): 56.5W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V
auf Bestellung 3461 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
70+ 2.56 EUR
140+ 2.03 EUR
560+ 1.72 EUR
1050+ 1.4 EUR
2030+ 1.32 EUR
Mindestbestellmenge: 9
AOI950A70ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI9N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 9A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251A
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Produkt ist nicht verfügbar
AOI9N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar