Produkte > B1D
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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| B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D10065KS | BASiC SEMICONDUCTOR | B1D10065KS THT Schottky diodes | auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Max. load current: 16A Power dissipation: 73W | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Max. load current: 16A Power dissipation: 73W Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D20065HC | BASiC SEMICONDUCTOR | B1D20065HC THT Schottky diodes | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1D40065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W | auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1D40065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W Anzahl je Verpackung: 1 Stücke | auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1DF | DC COMPONENTS | B1DF-DC SMD/THT sing. phase diode bridge rectif. | auf Bestellung 3297 Stücke: Lieferzeit 7-14 Tag (e) |
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