Produkte > B1D
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B1D03120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D03120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D05120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D05120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D06065F | BASiC SEMICONDUCTOR | B1D06065F SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D06065KF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.73V Power dissipation: 23W Max. forward impulse current: 45A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W Anzahl je Verpackung: 1 Stücke | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D10065E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D10065F | BASiC SEMICONDUCTOR | B1D10065F SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke | auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D10120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D10120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D20065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D20065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 40A Max. forward impulse current: 310A Power dissipation: 185W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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B1D40065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 40A Max. forward impulse current: 310A Power dissipation: 185W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke | auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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B1DF | DC COMPONENTS | B1DF-DC SMD/THT sing. phase diode bridge rectif. | auf Bestellung 7314 Stücke: Lieferzeit 7-14 Tag (e) |
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