Produkte > GNP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| GNP1070TC-ZE2 | ROHM Semiconductor | MOSFET NCH 650V 20A ESD | auf Bestellung 7860 Stücke: Lieferzeit 14-28 Tag (e) |
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| GNP1070TC-ZE2 | Rohm Semiconductor | Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R | auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | Rohm Semiconductor | Description: ECOGAN, 650V 20A DFN8080K, E-MOD Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V | auf Bestellung 4176 Stücke: Lieferzeit 21-28 Tag (e) |
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| GNP1070TC-ZE2 | ROHM | Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| GNP1070TC-ZE2 | Rohm Semiconductor | Description: ECOGAN, 650V 20A DFN8080K, E-MOD Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V | auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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| GNP1070TC-ZE2 | Rohm Semiconductor | Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | ROHM | Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| GNP1150TCA-ZE2 | ROHM | Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.7nC Bauform - Transistor: DFN8080AK Anzahl der Pins: 8Pin(s) Produktpalette: EcoGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| GNP1150TCA-ZE2 | Rohm Semiconductor | Description: ECOGAN, 650V 11A DFN8080AK, E-MO Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080AK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V | auf Bestellung 3048 Stücke: Lieferzeit 21-28 Tag (e) |
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| GNP1150TCA-ZE2 | ROHM | Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.7nC Bauform - Transistor: DFN8080AK Anzahl der Pins: 8Pin(s) Produktpalette: EcoGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| GNP1150TCA-ZE2 | ROHM Semiconductor | MOSFET NCH 650V 11A ESD | auf Bestellung 7750 Stücke: Lieferzeit 14-28 Tag (e) |
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| GNP1150TCA-ZE2 | Rohm Semiconductor | Description: ECOGAN, 650V 11A DFN8080AK, E-MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080AK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| GNPA-80350U-C | G-NOR Electronics Co., LTD | AC-DC перетворювач струму (світлодіодний драйвер); Кіл. вих. кан. = 1; Uвих1, В = 40 80; Рвих, Вт = 28; Uвх (AC), В = 170...250; Iвих1, А = 0,35; Габ. розм, мм = 247 х 36,5 х 27; ККД, % = 85; Тексп, °С = -25...+50; 247х37х27mm | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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