Produkte > MSJ

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
MSJ-CN1A0109+
auf Bestellung 347 Stücke:
Lieferzeit 21-28 Tag (e)
MSJ-CN1A01(1AB03117AEAA)ALCATEL
auf Bestellung 347 Stücke:
Lieferzeit 21-28 Tag (e)
MSJAC11N50BMicro Commercial ComponentsMSJAC11N50B
Produkt ist nicht verfügbar
MSJAC11N50B-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJAC11N50B-TPMicro Commercial CoDescription: Interface
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 25 V
Produkt ist nicht verfügbar
MSJAC11N65BMicro Commercial ComponentsMSJAC11N65B
Produkt ist nicht verfügbar
MSJAC11N65B-TPMicro Commercial ComponentsMSJAC11N65B-TP
Produkt ist nicht verfügbar
MSJAC11N65B-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJAC11N65B-TPMicro Commercial CoDescription: MOSFET N-CH 650V 11A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 25 V
Produkt ist nicht verfügbar
MSJAC11N65Y-TPMicro Commercial CoDescription: MOSFET N-CH 650V 11A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
MSJAC11N65Y-TPMicro Commercial ComponentsTrans MOSFET N-CH 650V 11A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
MSJAC11N65Y-TPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 11A 33A 78W
Produkt ist nicht verfügbar
MSJAC11N65Y-TPMicro Commercial CoDescription: MOSFET N-CH 650V 11A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
MSJB06N80AMicro Commercial ComponentsMSJB06N80A
Produkt ist nicht verfügbar
MSJB06N80A-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET, D2-PAK
Produkt ist nicht verfügbar
MSJB06N80A-TPMicro Commercial CoDescription: Interface
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 349 pF @ 100 V
Produkt ist nicht verfügbar
MSJB06N80A-TPMicro Commercial ComponentsMSJB06N80A-TP
Produkt ist nicht verfügbar
MSJB11N80A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.97 EUR
10+ 15.38 EUR
100+ 12.82 EUR
Mindestbestellmenge: 2
MSJB11N80A-TPMicro Commercial Components (MCC)MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.1 EUR
10+ 15.5 EUR
25+ 14.07 EUR
100+ 12.92 EUR
250+ 12.17 EUR
500+ 11.41 EUR
800+ 10.22 EUR
Mindestbestellmenge: 3
MSJB11N80A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
800+11.31 EUR
1600+ 10.18 EUR
Mindestbestellmenge: 800
MSJB14N65A-TPMicro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 300 V
Produkt ist nicht verfügbar
MSJB14N65A-TPMicro Commercial ComponentsN-CHANNEL Super-JunctionPower MOSFET
Produkt ist nicht verfügbar
MSJB14N65A-TPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJB17N80Micro Commercial ComponentsMSJB17N80
Produkt ist nicht verfügbar
MSJB17N80-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET, D2-PAK
Produkt ist nicht verfügbar
MSJB17N80-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 719 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.43 EUR
10+ 8.76 EUR
100+ 7.08 EUR
Mindestbestellmenge: 3
MSJB17N80-TPMicro Commercial ComponentsTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
MSJB17N80-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
MSJCN1A01ALCATEL
auf Bestellung 347 Stücke:
Lieferzeit 21-28 Tag (e)
MSJD016P
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
MSJL11N65-TPMicro Commercial ComponentsN-CHANNELSuper-JunctionPowerMOSFET DFN8080
Produkt ist nicht verfügbar
MSJL20N60A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET,DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 219mOhm @ 7.3A, 10V
Power Dissipation (Max): 196W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN8080A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 25 V
Produkt ist nicht verfügbar
MSJL20N60A-TPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJL20N60A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET,DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 219mOhm @ 7.3A, 10V
Power Dissipation (Max): 196W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN8080A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 25 V
Produkt ist nicht verfügbar
MSJP06N80AMicro Commercial ComponentsMSJP06N80A
Produkt ist nicht verfügbar
MSJP06N80A-BPMicro Commercial CoDescription: Interface
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 349 pF @ 100 V
Produkt ist nicht verfügbar
MSJP06N80A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJP07N80A-BPMicro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
Produkt ist nicht verfügbar
MSJP07N80A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJP08N90AMicro Commercial ComponentsN-Channel Super-Junction Power MOSFET
Produkt ist nicht verfügbar
MSJP08N90A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.62Ohm @ 2.5A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 25 V
auf Bestellung 4980 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.75 EUR
10+ 6.5 EUR
100+ 5.26 EUR
500+ 4.68 EUR
1000+ 4.01 EUR
2000+ 3.77 EUR
Mindestbestellmenge: 4
MSJP08N90A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJP09N65A-BPMicro Commercial Components (MCC)MOSFET 650Vds 30Vgs N-Ch Super Junction FET
Produkt ist nicht verfügbar
MSJP09N65A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET, TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 1.5A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 383 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
10+ 3.05 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
2000+ 1.54 EUR
5000+ 1.47 EUR
Mindestbestellmenge: 7
MSJP11N65-BPMicro Commercial CoDescription: MOSFET N-CH 650V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 4926 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.23 EUR
50+ 5.73 EUR
100+ 4.91 EUR
500+ 4.37 EUR
1000+ 3.74 EUR
2000+ 3.52 EUR
Mindestbestellmenge: 4
MSJP11N65-BPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 11A 33A 78W
auf Bestellung 4973 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.64 EUR
10+ 6.89 EUR
100+ 5.64 EUR
500+ 4.81 EUR
1000+ 3.87 EUR
5000+ 3.72 EUR
10000+ 3.61 EUR
Mindestbestellmenge: 7
MSJP11N65AMicro Commercial ComponentsMSJP11N65A
Produkt ist nicht verfügbar
MSJP11N65A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
auf Bestellung 4996 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.58 EUR
50+ 3.68 EUR
100+ 3.03 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
2000+ 2.07 EUR
Mindestbestellmenge: 6
MSJP11N65A-BPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJP11N80A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET, TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 250W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 918 pF @ 400 V
auf Bestellung 4992 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.81 EUR
10+ 7.39 EUR
100+ 5.98 EUR
500+ 5.32 EUR
1000+ 4.55 EUR
2000+ 4.29 EUR
Mindestbestellmenge: 3
MSJP11N80A-BPMicro Commercial Components (MCC)MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
6+8.87 EUR
10+ 7.44 EUR
25+ 7.05 EUR
100+ 6.06 EUR
250+ 5.69 EUR
500+ 5.36 EUR
1000+ 4.6 EUR
Mindestbestellmenge: 6
MSJP14N65AMicro Commercial ComponentsMSJP14N65A
Produkt ist nicht verfügbar
MSJP14N65A-BPMicro Commercial ComponentsN-Channel Super-Junction Power MOSFET
Produkt ist nicht verfügbar
MSJP14N65A-BPMicro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 30 V
Produkt ist nicht verfügbar
MSJP14N65A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJP20N65-BPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 20A 60A 151W
auf Bestellung 384 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.65 EUR
10+ 12.27 EUR
100+ 10.04 EUR
500+ 8.55 EUR
1000+ 6.73 EUR
5000+ 6.71 EUR
Mindestbestellmenge: 4
MSJP20N65-BPMicro Commercial ComponentsTrans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220AB(H) Tube
Produkt ist nicht verfügbar
MSJP20N65-BPMicro Commercial CoDescription: MOSFET N-CH TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 100 V
Produkt ist nicht verfügbar
MSJP20N65AMicro Commercial ComponentsMSJP20N65A
Produkt ist nicht verfügbar
MSJP20N65A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
auf Bestellung 30017 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.16 EUR
50+ 6.45 EUR
100+ 5.53 EUR
500+ 4.92 EUR
1000+ 4.21 EUR
2000+ 3.96 EUR
5000+ 3.8 EUR
Mindestbestellmenge: 4
MSJP20N65A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJP20N65A-BPMicro Commercial ComponentsMSJP20N65A-BP
Produkt ist nicht verfügbar
MSJPF06N80AMicro Commercial ComponentsMSJPF06N80A
Produkt ist nicht verfügbar
MSJPF06N80A-BPMicro Commercial CoDescription: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 349 pF @ 100 V
Produkt ist nicht verfügbar
MSJPF06N80A-BPMicro Commercial ComponentsMSJPF06N80A-BP
Produkt ist nicht verfügbar
MSJPF06N80A-BPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJPF07N80A-BPMicro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V
Power Dissipation (Max): 78W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
Produkt ist nicht verfügbar
MSJPF07N80A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJPF08N90AMicro Commercial ComponentsN-Channel Super-Junction Power MOSFET
Produkt ist nicht verfügbar
MSJPF08N90A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 25 V
auf Bestellung 4995 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.75 EUR
10+ 6.5 EUR
100+ 5.26 EUR
500+ 4.68 EUR
1000+ 4.01 EUR
2000+ 3.77 EUR
Mindestbestellmenge: 4
MSJPF08N90A-BPMicro Commercial ComponentsN-Channel Super-Junction Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
MSJPF08N90A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJPF11N65Micro Commercial ComponentsMSJPF11N65
Produkt ist nicht verfügbar
MSJPF11N65-BPMicro Commercial ComponentsTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
MSJPF11N65-BPMicro Commercial CoDescription: MOSFET N-CH 650V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 9941 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.46 EUR
50+ 5.91 EUR
100+ 5.07 EUR
500+ 4.5 EUR
1000+ 3.86 EUR
2000+ 3.63 EUR
5000+ 3.48 EUR
Mindestbestellmenge: 4
MSJPF11N65-BPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 11A 33A 31.3W
Produkt ist nicht verfügbar
MSJPF11N65AMicro Commercial ComponentsMSJPF11N65A
Produkt ist nicht verfügbar
MSJPF11N65A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
auf Bestellung 4837 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.28 EUR
50+ 4.25 EUR
100+ 3.49 EUR
500+ 2.96 EUR
1000+ 2.51 EUR
2000+ 2.38 EUR
Mindestbestellmenge: 5
MSJPF11N65A-BPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJPF11N65A-BPMicro Commercial ComponentsN-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJPF11N80A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET, TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 25W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.07 EUR
10+ 7.63 EUR
100+ 6.17 EUR
500+ 5.49 EUR
1000+ 4.7 EUR
2000+ 4.42 EUR
5000+ 4.24 EUR
Mindestbestellmenge: 3
MSJPF11N80A-BPMicro Commercial Components (MCC)MOSFET N-Ch 800V Super Junction Power FET
auf Bestellung 4986 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.15 EUR
10+ 7.7 EUR
25+ 7.25 EUR
100+ 6.24 EUR
250+ 5.88 EUR
500+ 5.54 EUR
1000+ 4.73 EUR
Mindestbestellmenge: 6
MSJPF11N80A-BPMicro Commercial ComponentsMSJPF11N80A-BP
Produkt ist nicht verfügbar
MSJPF20N65-BPMicro Commercial CoDescription: MOSFET N-CH 650V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
MSJPF20N65-BPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 20A 33A 31.3W
auf Bestellung 950 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.6 EUR
10+ 12.22 EUR
100+ 9.98 EUR
500+ 8.53 EUR
1000+ 6.81 EUR
5000+ 6.68 EUR
10000+ 6.55 EUR
Mindestbestellmenge: 4
MSJPF20N65AMicro Commercial ComponentsMSJPF20N65A
Produkt ist nicht verfügbar
MSJPF20N65A-BPMicro Commercial CoDescription: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 34W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1807 pF @ 25 V
auf Bestellung 4906 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.03 EUR
10+ 6.74 EUR
100+ 5.46 EUR
500+ 4.85 EUR
1000+ 4.15 EUR
2000+ 3.91 EUR
Mindestbestellmenge: 4
MSJPF20N65A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJPF20N65A-BPMicro Commercial ComponentsMSJPF20N65A-BP
Produkt ist nicht verfügbar
MSJR101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR102
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR103
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR104
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR105
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR111
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR112
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR113
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR114
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJR115
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
MSJT1035SAmphenolCONNECTOR
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
3+60.26 EUR
5+ 48.48 EUR
10+ 45.53 EUR
Mindestbestellmenge: 3
MSJT1035SAmphenolCONNECTOR
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
3+60.26 EUR
5+ 48.48 EUR
10+ 45.53 EUR
Mindestbestellmenge: 3
MSJU04N80AMicro Commercial ComponentsMSJU04N80A
Produkt ist nicht verfügbar
MSJU04N80A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 4898 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.11 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
MSJU04N80A-TPMicro Commercial ComponentsMSJU04N80A-TP
Produkt ist nicht verfügbar
MSJU04N80A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.7 EUR
Mindestbestellmenge: 2500
MSJU05N90A-TPMicro Commercial ComponentsMSJU05N90A-TP
Produkt ist nicht verfügbar
MSJU05N90A-TPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJU05N90A-TPMicro Commercial CoDescription: Interface
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 1.49Ohm @ 2.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 25 V
Produkt ist nicht verfügbar
MSJU06N80A-TPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJU07N65-TPMicro Commercial CoDescription: MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJU07N65AMicro Commercial ComponentsMSJU07N65A
Produkt ist nicht verfügbar
MSJU07N65A-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJU07N65A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Produkt ist nicht verfügbar
MSJU07N65A-TPMicro Commercial ComponentsN-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJU07N65A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2466 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
MSJU11N65-TPMicro Commercial ComponentsTrans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
MSJU11N65-TPMicro Commercial CoDescription: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
MSJU11N65-TPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 11A 33A 78W
Produkt ist nicht verfügbar
MSJU11N65-TPMicro Commercial CoDescription: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
MSJU11N65AMicro Commercial ComponentsMSJU11N65A
Produkt ist nicht verfügbar
MSJU11N65A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
auf Bestellung 2258 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.08 EUR
10+ 3.39 EUR
100+ 2.7 EUR
500+ 2.28 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
MSJU11N65A-TPMicro Commercial ComponentsTrans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
MSJU11N65A-TPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
MSJU11N65A-TPMicro Commercial CoDescription: N-CHANNEL MOSFET, DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Produkt ist nicht verfügbar
MSJW20N65-BPMicro Commercial CoDescription: MOSFET N-CH TO247
Produkt ist nicht verfügbar
MSJW20N65-BPMicro Commercial ComponentsTrans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
MSJW20N65-BPMicro Commercial Components (MCC)MOSFET N-Ch 650Vds 30Vgs 20A 60A 151W
Produkt ist nicht verfügbar
MSJW20N65AMicro Commercial ComponentsMSJW20N65A
Produkt ist nicht verfügbar
MSJW20N65A-BPMicro Commercial CoDescription: MOSFET N-CH TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tj)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 100 V
auf Bestellung 5395 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.96 EUR
10+ 10.04 EUR
100+ 8.12 EUR
500+ 7.22 EUR
1000+ 6.18 EUR
2000+ 5.82 EUR
Mindestbestellmenge: 3
MSJW20N65A-BPMicro Commercial Components (MCC)MOSFET N-CHANNEL MOSFET,TO-247
Produkt ist nicht verfügbar
MSJW47N60A-BPMicro Commercial ComponentsMSJW47N60A-BP
Produkt ist nicht verfügbar
MSJW47N60A-BPMicro Commercial Components (MCC)MOSFET
Produkt ist nicht verfügbar
MSJW47N60A-BPMicro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4476 pF @ 300 V
Produkt ist nicht verfügbar