| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| BUK7D25-40EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Technology: Trench Polarisation: unipolar Gate charge: 13nC On-state resistance: 46mΩ Drain current: 12A Power dissipation: 15W Pulsed drain current: 76A Drain-source voltage: 40V Application: automotive industry Case: DFN2020MD-6; SOT1220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 19.5nC On-state resistance: 68mΩ Drain current: 21.3A Power dissipation: 62W Gate-source voltage: ±20V Pulsed drain current: 121A Drain-source voltage: 80V Application: automotive industry Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 9nC On-state resistance: 94mΩ Drain current: 14A Power dissipation: 36W Gate-source voltage: ±20V Pulsed drain current: 78A Drain-source voltage: 60V Application: automotive industry Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y3R5-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 49.4nC On-state resistance: 3.5mΩ Drain current: 100A Power dissipation: 167W Gate-source voltage: ±20V Pulsed drain current: 622A Drain-source voltage: 40V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y9R9-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 51.6nC On-state resistance: 24.9mΩ Drain current: 63A Power dissipation: 195W Gate-source voltage: ±20V Pulsed drain current: 354A Drain-source voltage: 80V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y41-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 16.4nC On-state resistance: 103mΩ Drain current: 18A Power dissipation: 64W Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 80V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y53-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 22nC On-state resistance: 138mΩ Drain current: 17.6A Power dissipation: 85W Gate-source voltage: ±20V Pulsed drain current: 99A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y65-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 17.8nC On-state resistance: 0.18Ω Drain current: 13.4A Power dissipation: 64W Pulsed drain current: 76A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK753R1-40E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 79nC On-state resistance: 5.9mΩ Drain current: 100A Power dissipation: 234W Gate-source voltage: ±20V Pulsed drain current: 798A Drain-source voltage: 40V Application: automotive industry Case: SOT78; TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK766R0-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 62nC On-state resistance: 13mΩ Drain current: 75A Power dissipation: 182W Gate-source voltage: ±20V Pulsed drain current: 473A Drain-source voltage: 60V Application: automotive industry Case: D2PAK; SOT404 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y102-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 12.2nC On-state resistance: 265mΩ Drain current: 10.6A Power dissipation: 60W Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y13-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58A; Idm: 234A; 85W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 19nC On-state resistance: 13mΩ Drain current: 58A Power dissipation: 85W Pulsed drain current: 234A Drain-source voltage: 40V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y15-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 54.5nC On-state resistance: 41.5mΩ Drain current: 48A Power dissipation: 195W Gate-source voltage: ±20V Pulsed drain current: 274A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y15-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 94W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 25.4nC On-state resistance: 15mΩ Drain current: 53A Power dissipation: 94W Pulsed drain current: 212A Drain-source voltage: 60V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y153-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 9.4nC On-state resistance: 424mΩ Drain current: 6.7A Power dissipation: 37.3W Gate-source voltage: ±20V Pulsed drain current: 37.5A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BUK7Y7R2-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 50.8nC On-state resistance: 16.1mΩ Drain current: 72A Power dissipation: 167W Gate-source voltage: ±20V Pulsed drain current: 407A Drain-source voltage: 60V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZV55-B3V6,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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BZV55-C8V2,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZV55-C8V2,135 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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74LVC00AD,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA Type of integrated circuit: digital Technology: CMOS; TTL Case: SO14 Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Delay time: 12ns Quiescent current: 40µA Supply voltage: 1.2V DC; 1.65...3.6V DC Number of inputs: 2 Family: LVC |
auf Bestellung 2867 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC00APW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC Type of integrated circuit: digital Technology: CMOS; TTL Case: TSSOP14 Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Quiescent current: 40µA Supply voltage: 1.65...5.5V DC Number of inputs: 2 Family: LVC |
auf Bestellung 1583 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC00ADB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC Type of integrated circuit: digital Technology: CMOS; TTL Case: SSOP14 Kind of gate: NAND Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Supply voltage: 1.2...3.6V DC Number of inputs: 2 Family: LVC |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC00ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C Type of integrated circuit: digital Technology: CMOS; TTL Case: DHVQFN14 Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Delay time: 12ns Quiescent current: 40µA Supply voltage: 1.2V DC; 1.65...3.6V DC Number of inputs: 2 Family: LVC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN080-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN140-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN140-650FBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN190-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN190-650FBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN3R2-100CBEAZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| GAN7R0-150LBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PDTC123JT-QR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PSMN3R5-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 803A; 338W Mounting: THT Case: SOT78; TO220AB Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Gate charge: 139nC On-state resistance: 7.2mΩ Power dissipation: 338W Gate-source voltage: ±20V Pulsed drain current: 803A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| BUK963R3-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 803A; 293W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Gate charge: 95nC On-state resistance: 7.3mΩ Power dissipation: 293W Gate-source voltage: ±10V Pulsed drain current: 803A Application: automotive industry Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BC53-16PA,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: DFN2020-3; SOT1061 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74ALVC164245DGG,118 | NEXPERIA |
Category: Level translators Description: IC: digital; bus transceiver,logic level voltage translator Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; logic level voltage translator Technology: CMOS; TTL Mounting: SMD Case: TSSOP48 Operating temperature: -40...85°C Kind of output: 3-state Family: ALVC Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Number of channels: 16 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC590D,118 | NEXPERIA |
Category: Counters/dividers Description: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary counter Technology: CMOS Mounting: SMD Case: SO16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
auf Bestellung 1197 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC597PW,118 | NEXPERIA |
Category: Shift registers Description: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| 74HC590BQ,115 | NEXPERIA |
Category: Counters/dividers Description: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary counter Technology: CMOS Mounting: SMD Case: DHVQFN14 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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74HC590PW,118 | NEXPERIA |
Category: Counters/dividers Description: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary up counter Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Kind of package: reel; tape Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| 74HC594PWJ | NEXPERIA |
Category: Shift registers Description: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift register Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7D25-40EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: Trench
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 46mΩ
Drain current: 12A
Power dissipation: 15W
Pulsed drain current: 76A
Drain-source voltage: 40V
Application: automotive industry
Case: DFN2020MD-6; SOT1220
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: Trench
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 46mΩ
Drain current: 12A
Power dissipation: 15W
Pulsed drain current: 76A
Drain-source voltage: 40V
Application: automotive industry
Case: DFN2020MD-6; SOT1220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7M27-80EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 68mΩ
Drain current: 21.3A
Power dissipation: 62W
Gate-source voltage: ±20V
Pulsed drain current: 121A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 68mΩ
Drain current: 21.3A
Power dissipation: 62W
Gate-source voltage: ±20V
Pulsed drain current: 121A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
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| BUK7M42-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 94mΩ
Drain current: 14A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 94mΩ
Drain current: 14A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BUK7Y3R5-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 49.4nC
On-state resistance: 3.5mΩ
Drain current: 100A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 622A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 49.4nC
On-state resistance: 3.5mΩ
Drain current: 100A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 622A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BUK7Y9R9-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 51.6nC
On-state resistance: 24.9mΩ
Drain current: 63A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 354A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 51.6nC
On-state resistance: 24.9mΩ
Drain current: 63A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 354A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y41-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.4nC
On-state resistance: 103mΩ
Drain current: 18A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.4nC
On-state resistance: 103mΩ
Drain current: 18A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y53-100B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 138mΩ
Drain current: 17.6A
Power dissipation: 85W
Gate-source voltage: ±20V
Pulsed drain current: 99A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 138mΩ
Drain current: 17.6A
Power dissipation: 85W
Gate-source voltage: ±20V
Pulsed drain current: 99A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y65-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.8nC
On-state resistance: 0.18Ω
Drain current: 13.4A
Power dissipation: 64W
Pulsed drain current: 76A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.8nC
On-state resistance: 0.18Ω
Drain current: 13.4A
Power dissipation: 64W
Pulsed drain current: 76A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK753R1-40E,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 5.9mΩ
Drain current: 100A
Power dissipation: 234W
Gate-source voltage: ±20V
Pulsed drain current: 798A
Drain-source voltage: 40V
Application: automotive industry
Case: SOT78; TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 5.9mΩ
Drain current: 100A
Power dissipation: 234W
Gate-source voltage: ±20V
Pulsed drain current: 798A
Drain-source voltage: 40V
Application: automotive industry
Case: SOT78; TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK766R0-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 13mΩ
Drain current: 75A
Power dissipation: 182W
Gate-source voltage: ±20V
Pulsed drain current: 473A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 13mΩ
Drain current: 75A
Power dissipation: 182W
Gate-source voltage: ±20V
Pulsed drain current: 473A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y102-100B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.2nC
On-state resistance: 265mΩ
Drain current: 10.6A
Power dissipation: 60W
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.2nC
On-state resistance: 265mΩ
Drain current: 10.6A
Power dissipation: 60W
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y13-40B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; Idm: 234A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 13mΩ
Drain current: 58A
Power dissipation: 85W
Pulsed drain current: 234A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; Idm: 234A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 13mΩ
Drain current: 58A
Power dissipation: 85W
Pulsed drain current: 234A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y15-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 54.5nC
On-state resistance: 41.5mΩ
Drain current: 48A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 274A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 54.5nC
On-state resistance: 41.5mΩ
Drain current: 48A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 274A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y15-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 94W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 25.4nC
On-state resistance: 15mΩ
Drain current: 53A
Power dissipation: 94W
Pulsed drain current: 212A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 94W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 25.4nC
On-state resistance: 15mΩ
Drain current: 53A
Power dissipation: 94W
Pulsed drain current: 212A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y153-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.4nC
On-state resistance: 424mΩ
Drain current: 6.7A
Power dissipation: 37.3W
Gate-source voltage: ±20V
Pulsed drain current: 37.5A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.4nC
On-state resistance: 424mΩ
Drain current: 6.7A
Power dissipation: 37.3W
Gate-source voltage: ±20V
Pulsed drain current: 37.5A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y7R2-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.8nC
On-state resistance: 16.1mΩ
Drain current: 72A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 407A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.8nC
On-state resistance: 16.1mΩ
Drain current: 72A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 407A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZV55-B3V6,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| BZV55-C8V2,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 794+ | 0.09 EUR |
| 1191+ | 0.06 EUR |
| BZV55-C8V2,135 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC00AD,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: SO14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 12ns
Quiescent current: 40µA
Supply voltage: 1.2V DC; 1.65...3.6V DC
Number of inputs: 2
Family: LVC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: SO14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 12ns
Quiescent current: 40µA
Supply voltage: 1.2V DC; 1.65...3.6V DC
Number of inputs: 2
Family: LVC
auf Bestellung 2867 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 309+ | 0.23 EUR |
| 355+ | 0.2 EUR |
| 74LVC00APW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Family: LVC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Family: LVC
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 371+ | 0.19 EUR |
| 74LVC00ADB,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: SSOP14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Number of inputs: 2
Family: LVC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: SSOP14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Number of inputs: 2
Family: LVC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 74LVC00ABQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: DHVQFN14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 12ns
Quiescent current: 40µA
Supply voltage: 1.2V DC; 1.65...3.6V DC
Number of inputs: 2
Family: LVC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: DHVQFN14
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 12ns
Quiescent current: 40µA
Supply voltage: 1.2V DC; 1.65...3.6V DC
Number of inputs: 2
Family: LVC
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| GAN080-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
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| GAN140-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
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Stück im Wert von UAH
| GAN140-650FBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
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| GAN190-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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Im Einkaufswagen
Stück im Wert von UAH
| GAN190-650FBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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| GAN3R2-100CBEAZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
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Im Einkaufswagen
Stück im Wert von UAH
| GAN7R0-150LBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
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Stück im Wert von UAH
| PDTC123JT-QR |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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| PSMN3R5-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 803A; 338W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Gate charge: 139nC
On-state resistance: 7.2mΩ
Power dissipation: 338W
Gate-source voltage: ±20V
Pulsed drain current: 803A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 803A; 338W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Gate charge: 139nC
On-state resistance: 7.2mΩ
Power dissipation: 338W
Gate-source voltage: ±20V
Pulsed drain current: 803A
Kind of channel: enhancement
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Stück im Wert von UAH
| BUK963R3-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 803A; 293W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Gate charge: 95nC
On-state resistance: 7.3mΩ
Power dissipation: 293W
Gate-source voltage: ±10V
Pulsed drain current: 803A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 803A; 293W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Gate charge: 95nC
On-state resistance: 7.3mΩ
Power dissipation: 293W
Gate-source voltage: ±10V
Pulsed drain current: 803A
Application: automotive industry
Kind of channel: enhancement
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Stück im Wert von UAH
| BC53-16PA,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
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Stück im Wert von UAH
| 74ALVC164245DGG,118 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of output: 3-state
Family: ALVC
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Number of channels: 16
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of output: 3-state
Family: ALVC
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Number of channels: 16
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 60+ | 1.2 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.72 EUR |
| 74HC590D,118 |
|
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
auf Bestellung 1197 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 113+ | 0.64 EUR |
| 125+ | 0.57 EUR |
| 74HC597PW,118 |
|
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC590BQ,115 |
|
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 74HC590PW,118 |
|
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary up counter
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
Category: Counters/dividers
Description: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary up counter
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 74HC594PWJ |
|
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Category: Shift registers
Description: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
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Stück im Wert von UAH