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PSMN3R5-30YL,115 PSMN3R5-30YL,115 NEXPERIA PSMN3R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1059 Stücke:
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31+2.35 EUR
39+1.86 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA PSMN017-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1043 Stücke:
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74+0.97 EUR
87+0.82 EUR
107+0.67 EUR
120+0.6 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.47 EUR
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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 609 Stücke:
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41+1.74 EUR
53+1.37 EUR
60+1.2 EUR
100+1.1 EUR
250+1.06 EUR
500+0.94 EUR
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
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65+1.1 EUR
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1037 Stücke:
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30+2.39 EUR
34+2.14 EUR
40+1.8 EUR
100+1.63 EUR
250+1.5 EUR
500+1.43 EUR
1000+1.29 EUR
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1758 Stücke:
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103+0.7 EUR
119+0.6 EUR
131+0.55 EUR
181+0.4 EUR
250+0.36 EUR
500+0.33 EUR
1000+0.32 EUR
1500+0.28 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1342 Stücke:
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28+2.6 EUR
29+2.52 EUR
30+2.42 EUR
100+2.35 EUR
250+2.26 EUR
500+2.2 EUR
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PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1471 Stücke:
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105+0.69 EUR
139+0.52 EUR
154+0.46 EUR
167+0.43 EUR
250+0.41 EUR
500+0.37 EUR
1000+0.36 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1397 Stücke:
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55+1.32 EUR
69+1.04 EUR
80+0.9 EUR
100+0.86 EUR
250+0.79 EUR
500+0.76 EUR
1000+0.69 EUR
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PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 NEXPERIA PSMN2R2-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 22 Stücke:
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22+3.25 EUR
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PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 692 Stücke:
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70+1.03 EUR
94+0.77 EUR
103+0.69 EUR
112+0.64 EUR
250+0.61 EUR
500+0.55 EUR
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PSMN4R6-60BS,118 PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 715 Stücke:
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25+2.92 EUR
33+2.19 EUR
37+1.97 EUR
100+1.83 EUR
250+1.74 EUR
500+1.57 EUR
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PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 NEXPERIA PSMN2R0-30YLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1317 Stücke:
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44+1.66 EUR
48+1.5 EUR
52+1.39 EUR
100+1.32 EUR
250+1.2 EUR
500+1.17 EUR
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PSMN3R0-60PS,127 PSMN3R0-60PS,127 NEXPERIA PSMN3R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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17+4.36 EUR
18+3.99 EUR
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PSMN3R9-60PSQ PSMN3R9-60PSQ NEXPERIA PSMN3R9-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
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22+3.33 EUR
24+3 EUR
26+2.83 EUR
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PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 42 Stücke:
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26+2.79 EUR
29+2.53 EUR
32+2.26 EUR
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PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 NEXPERIA PSMN7R0-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1400 Stücke:
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82+0.87 EUR
110+0.65 EUR
123+0.58 EUR
132+0.54 EUR
250+0.52 EUR
500+0.46 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1370 Stücke:
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32+2.26 EUR
43+1.67 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
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PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
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23+3.1 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
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62+1.16 EUR
67+1.07 EUR
72+1 EUR
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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14+5.19 EUR
16+4.58 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS,115 NEXPERIA PSMN7R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1424 Stücke:
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33+2.19 EUR
44+1.63 EUR
49+1.47 EUR
100+1.37 EUR
250+1.32 EUR
500+1.17 EUR
1000+1.12 EUR
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PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 781 Stücke:
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22+3.4 EUR
23+3.15 EUR
24+3 EUR
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PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060PW,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
124+0.58 EUR
135+0.53 EUR
141+0.51 EUR
192+0.46 EUR
Mindestbestellmenge: 112
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74LV4060DB,112 74LV4060DB,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 141 Stücke:
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79+0.92 EUR
88+0.82 EUR
Mindestbestellmenge: 79
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HEF4541BT-Q100J NEXPERIA HEF4541B_Q100.pdf Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
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HEF4541BT,118 NEXPERIA HEF4541B.pdf Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
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PUMH17,115 PUMH17,115 NEXPERIA PEMH17_PUMH17.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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1N4531,113 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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1N4531,133 1N4531,133 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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1N4531,143 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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PEMH11,115 PEMH11,115 NEXPERIA PEMH11.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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PEMH11,315 PEMH11,315 NEXPERIA PEMH11.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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PUMH13,115 PUMH13,115 NEXPERIA PEMH13_PUMH13.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 20199 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
794+0.09 EUR
926+0.077 EUR
1185+0.06 EUR
1578+0.045 EUR
1774+0.04 EUR
1894+0.038 EUR
3000+0.035 EUR
6000+0.033 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
PUMH10,115 PUMH10,115 NEXPERIA PEMH10_PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 11019 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
747+0.096 EUR
1034+0.069 EUR
1238+0.058 EUR
1634+0.044 EUR
1819+0.039 EUR
1931+0.037 EUR
3000+0.035 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
PUMH1,115 PUMH1,115 NEXPERIA PEMH1_PUMH1.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 19318 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
715+0.1 EUR
1069+0.067 EUR
1185+0.06 EUR
1578+0.045 EUR
1774+0.04 EUR
1894+0.038 EUR
3000+0.035 EUR
15000+0.033 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
PUMH15,115 PUMH15,115 NEXPERIA PEMH15_PUMH15.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
460+0.16 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PUMH18,115 PUMH18,115 NEXPERIA PEMH18_PUMH18.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
596+0.12 EUR
Mindestbestellmenge: 417
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PUMH19,115 PUMH19,115 NEXPERIA PEMH19_PUMH19.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
auf Bestellung 5533 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1220+0.059 EUR
1624+0.044 EUR
1786+0.04 EUR
1931+0.037 EUR
2025+0.035 EUR
2253+0.032 EUR
3000+0.031 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
PUMH10-QX PUMH10-QX NEXPERIA PUMH10-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH1-QX PUMH1-QX NEXPERIA PUMH1-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH10,125 NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10Z NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH15-QX PUMH15-QX NEXPERIA PUMH15-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH16,115 PUMH16,115 NEXPERIA PEMH16_PUMH16.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PMST5551,115 PMST5551,115 NEXPERIA PMST5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2502 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
486+0.15 EUR
551+0.13 EUR
653+0.11 EUR
875+0.082 EUR
964+0.074 EUR
1053+0.068 EUR
Mindestbestellmenge: 417
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BZX84-C68,215 BZX84-C68,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 68V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 68V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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BAS16H,115 BAS16H,115 NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118 NEXPERIA 74HCT4046AD,118.pdf Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: phase-locked loop
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 55
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BCW72,215 BCW72,215 NEXPERIA BCW71_72.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
363+0.2 EUR
421+0.17 EUR
Mindestbestellmenge: 295
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74LV04BQ,115 NEXPERIA 74LV04D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; VFQFN14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: VFQFN14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LV04D,118 74LV04D,118 NEXPERIA 74LV04D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
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74LV04PW,118 74LV04PW,118 NEXPERIA 74LV04D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; TSSOP14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110Z,135 PBSS8110Z,135 NEXPERIA PBSS8110Z.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110X,135 PBSS8110X,135 NEXPERIA PBSS8110X.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110T-QR NEXPERIA PBSS8110T-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.48W
Case: SOT23; TO236AB
Collector current: 1A
Application: automotive industry
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110Y,115 PBSS8110Y,115 NEXPERIA PBSS8110Y.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Power dissipation: 0.625W
Case: SC88; SOT363; TSSOP6
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5580PA,115 NEXPERIA PBSS5580PA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Case: DFN2020-3; SOT1061
Collector current: 4A
Current gain: 70...265
Collector-emitter voltage: 80V
Frequency: 110MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PSMN3R5-30YL,115 PSMN3R5-30YL.pdf
PSMN3R5-30YL,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
39+1.86 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
Mindestbestellmenge: 31
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PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
87+0.82 EUR
107+0.67 EUR
120+0.6 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.47 EUR
Mindestbestellmenge: 74
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
53+1.37 EUR
60+1.2 EUR
100+1.1 EUR
250+1.06 EUR
500+0.94 EUR
Mindestbestellmenge: 41
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
34+2.14 EUR
40+1.8 EUR
100+1.63 EUR
250+1.5 EUR
500+1.43 EUR
1000+1.29 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1758 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
119+0.6 EUR
131+0.55 EUR
181+0.4 EUR
250+0.36 EUR
500+0.33 EUR
1000+0.32 EUR
1500+0.28 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
29+2.52 EUR
30+2.42 EUR
100+2.35 EUR
250+2.26 EUR
500+2.2 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
139+0.52 EUR
154+0.46 EUR
167+0.43 EUR
250+0.41 EUR
500+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
69+1.04 EUR
80+0.9 EUR
100+0.86 EUR
250+0.79 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 692 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
94+0.77 EUR
103+0.69 EUR
112+0.64 EUR
250+0.61 EUR
500+0.55 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
33+2.19 EUR
37+1.97 EUR
100+1.83 EUR
250+1.74 EUR
500+1.57 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
52+1.39 EUR
100+1.32 EUR
250+1.2 EUR
500+1.17 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R0-60PS,127 PSMN3R0-60PS.pdf
PSMN3R0-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
18+3.99 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
29+2.53 EUR
32+2.26 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
110+0.65 EUR
123+0.58 EUR
132+0.54 EUR
250+0.52 EUR
500+0.46 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
43+1.67 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
67+1.07 EUR
72+1 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
16+4.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
44+1.63 EUR
49+1.47 EUR
100+1.37 EUR
250+1.32 EUR
500+1.17 EUR
1000+1.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
23+3.15 EUR
24+3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LV4060PW,112 74LV4060.pdf
74LV4060PW,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
124+0.58 EUR
135+0.53 EUR
141+0.51 EUR
192+0.46 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
74LV4060DB,112 74LV4060.pdf
74LV4060DB,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
HEF4541BT-Q100J HEF4541B_Q100.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HEF4541BT,118 HEF4541B.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH17,115 PEMH17_PUMH17.pdf
PUMH17,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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1N4531,113 1N4531_2.pdf
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4531,133 1N4531_2.pdf
1N4531,133
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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1N4531,143 1N4531_2.pdf
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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PEMH11,115 PEMH11.pdf
PEMH11,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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PEMH11,315 PEMH11.pdf
PEMH11,315
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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PUMH13,115 PEMH13_PUMH13.pdf
PUMH13,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 20199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
794+0.09 EUR
926+0.077 EUR
1185+0.06 EUR
1578+0.045 EUR
1774+0.04 EUR
1894+0.038 EUR
3000+0.035 EUR
6000+0.033 EUR
Mindestbestellmenge: 625
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PUMH10,115 PEMH10_PUMH10.pdf
PUMH10,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 11019 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
747+0.096 EUR
1034+0.069 EUR
1238+0.058 EUR
1634+0.044 EUR
1819+0.039 EUR
1931+0.037 EUR
3000+0.035 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
PUMH1,115 PEMH1_PUMH1.pdf
PUMH1,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 19318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
715+0.1 EUR
1069+0.067 EUR
1185+0.06 EUR
1578+0.045 EUR
1774+0.04 EUR
1894+0.038 EUR
3000+0.035 EUR
15000+0.033 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
PUMH15,115 PEMH15_PUMH15.pdf
PUMH15,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
460+0.16 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PUMH18,115 PEMH18_PUMH18.pdf
PUMH18,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
596+0.12 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PUMH19,115 PEMH19_PUMH19.pdf
PUMH19,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
auf Bestellung 5533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1220+0.059 EUR
1624+0.044 EUR
1786+0.04 EUR
1931+0.037 EUR
2025+0.035 EUR
2253+0.032 EUR
3000+0.031 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
PUMH10-QX PUMH10-Q.pdf
PUMH10-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH1-QX PUMH1-Q.pdf
PUMH1-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH10,125 PUMH10.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10.pdf
PUMH10Z
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH15-QX PUMH15-Q.pdf
PUMH15-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH16,115 PEMH16_PUMH16.pdf
PUMH16,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMST5551,115 PMST5551.pdf
PMST5551,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
486+0.15 EUR
551+0.13 EUR
653+0.11 EUR
875+0.082 EUR
964+0.074 EUR
1053+0.068 EUR
Mindestbestellmenge: 417
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BZX84-C68,215 BZX84_SER.pdf
BZX84-C68,215
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 68V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 68V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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BAS16H,115 BAS16_SER.pdf
BAS16H,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118.pdf
74HCT4046AD,118
Hersteller: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Family: HCT
Technology: CMOS; TTL
Kind of integrated circuit: phase-locked loop
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
BCW72,215 BCW71_72.pdf
BCW72,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
363+0.2 EUR
421+0.17 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
74LV04BQ,115 74LV04D.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; VFQFN14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: VFQFN14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
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74LV04D,118 74LV04D.pdf
74LV04D,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LV04PW,118 74LV04D.pdf
74LV04PW,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; TSSOP14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Produkt ist nicht verfügbar
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PBSS8110Z,135 PBSS8110Z.pdf
PBSS8110Z,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110X,135 PBSS8110X.pdf
PBSS8110X,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110T-QR PBSS8110T-Q.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.48W
Case: SOT23; TO236AB
Collector current: 1A
Application: automotive industry
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS8110Y,115 PBSS8110Y.pdf
PBSS8110Y,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Power dissipation: 0.625W
Case: SC88; SOT363; TSSOP6
Collector current: 1A
Current gain: 80...500
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5580PA,115 PBSS5580PA.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Case: DFN2020-3; SOT1061
Collector current: 4A
Current gain: 70...265
Collector-emitter voltage: 80V
Frequency: 110MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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