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PDTA144ET,215 PDTA144ET,215 NEXPERIA PDTA144E_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 180MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Produkt ist nicht verfügbar
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PDTA144WT,215 PDTA144WT,215 NEXPERIA PDTA144W_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
Produkt ist nicht verfügbar
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PDTA144WU,115 PDTA144WU,115 NEXPERIA PDTA144W_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
Produkt ist nicht verfügbar
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PDTA144TT,215 PDTA144TT,215 NEXPERIA PDTA144T_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Current gain: 100
Produkt ist nicht verfügbar
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PDTA144TU,115 PDTA144TU,115 NEXPERIA Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 100
Produkt ist nicht verfügbar
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PDTA144VT,215 PDTA144VT,215 NEXPERIA PDTA144V_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Produkt ist nicht verfügbar
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PDTA144VU,115 PDTA144VU,115 NEXPERIA PDTA144V_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Produkt ist nicht verfügbar
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BSP122,115 BSP122,115 NEXPERIA BSP122.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.55A
On-state resistance: 2.5Ω
Power dissipation: 1.5W
Gate-source voltage: ±2V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 203 Stücke:
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109+0.66 EUR
137+0.52 EUR
175+0.41 EUR
Mindestbestellmenge: 109
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BSP126,115 BSP126,115 NEXPERIA BSP126.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 250V
Drain current: 0.375A
On-state resistance: 7.5Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
117+0.61 EUR
137+0.52 EUR
Mindestbestellmenge: 97
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BSP19,115 BSP19,115 NEXPERIA BSP19.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 1.2W
Current gain: 40
Collector-emitter voltage: 400V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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BCX54-16,115 BCX54-16,115 NEXPERIA BCX54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
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BCX54-16,135 BCX54-16,135 NEXPERIA BCX54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
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BCX54-16-QX NEXPERIA BCX54-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
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74ALVCH16501DGGY NEXPERIA 74ALVCH16501DGGY.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
Produkt ist nicht verfügbar
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PESD24VS2UT,215 PESD24VS2UT,215 NEXPERIA PESD24VS2UT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.16kW
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Version: ESD
auf Bestellung 16608 Stücke:
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132+0.54 EUR
196+0.37 EUR
315+0.23 EUR
500+0.16 EUR
1000+0.12 EUR
3000+0.11 EUR
15000+0.099 EUR
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PESD3V3L1BAZ PESD3V3L1BAZ NEXPERIA PESD3V3L1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
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PESD3V6Z1BCSFYL PESD3V6Z1BCSFYL NEXPERIA PESD3V6Z1BCSF.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
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74VHC125D,118 NEXPERIA 74VHC_VHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: VHC
Case: SO14
Produkt ist nicht verfügbar
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74VHC125PW,118 NEXPERIA 74VHC_VHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: VHC
Case: TSSOP14
Produkt ist nicht verfügbar
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PSMN5R5-60YS,115 PSMN5R5-60YS,115 NEXPERIA PSMN5R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 56nC
On-state resistance: 8.3mΩ
Power dissipation: 130W
Gate-source voltage: ±20V
Drain current: 74A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1160 Stücke:
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28+2.57 EUR
38+1.93 EUR
100+1.73 EUR
Mindestbestellmenge: 28
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PSMN4R1-60YLX PSMN4R1-60YLX NEXPERIA PSMN4R1-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 103nC
On-state resistance: 3.3mΩ
Power dissipation: 238W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 60V
Pulsed drain current: 593A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1170 Stücke:
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40+1.79 EUR
49+1.49 EUR
54+1.33 EUR
100+1.23 EUR
250+1.19 EUR
500+1.06 EUR
1000+1.04 EUR
Mindestbestellmenge: 40
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PSMN013-40VLDX PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
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57+1.27 EUR
69+1.04 EUR
82+0.87 EUR
100+0.79 EUR
250+0.73 EUR
500+0.69 EUR
1000+0.63 EUR
1500+0.61 EUR
Mindestbestellmenge: 57
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PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 70nC
On-state resistance: 1.15mΩ
Power dissipation: 272W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 251 Stücke:
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31+2.33 EUR
37+1.94 EUR
41+1.76 EUR
100+1.63 EUR
250+1.56 EUR
Mindestbestellmenge: 31
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PSMN4R0-30YLDX PSMN4R0-30YLDX NEXPERIA PSMN4R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 9.1nC
On-state resistance: 4.4mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Drain current: 95A
Drain-source voltage: 30V
Pulsed drain current: 378A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1668 Stücke:
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122+0.59 EUR
144+0.5 EUR
160+0.45 EUR
172+0.42 EUR
250+0.4 EUR
500+0.37 EUR
Mindestbestellmenge: 122
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PSMN7R5-60YLX PSMN7R5-60YLX NEXPERIA PSMN7R5-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 60.6nC
On-state resistance: 19.7mΩ
Power dissipation: 147W
Drain current: 61A
Drain-source voltage: 60V
Pulsed drain current: 346A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1206 Stücke:
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51+1.42 EUR
60+1.2 EUR
67+1.07 EUR
100+1 EUR
250+0.94 EUR
500+0.86 EUR
1000+0.84 EUR
Mindestbestellmenge: 51
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PSMN013-30MLC,115 PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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74+0.97 EUR
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PSMN1R7-60BS,118 PSMN1R7-60BS,118 NEXPERIA PSMN1R7-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 369 Stücke:
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18+4.18 EUR
20+3.59 EUR
22+3.3 EUR
25+3.19 EUR
50+2.99 EUR
100+2.82 EUR
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PSMN8R5-60YS,115 PSMN8R5-60YS,115 NEXPERIA PSMN8R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 39nC
On-state resistance: 5.6mΩ
Power dissipation: 106W
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 60V
Pulsed drain current: 303A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1340 Stücke:
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57+1.27 EUR
63+1.14 EUR
68+1.06 EUR
100+1 EUR
250+0.9 EUR
500+0.86 EUR
Mindestbestellmenge: 57
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PSMN3R5-30YL,115 PSMN3R5-30YL,115 NEXPERIA PSMN3R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 19nC
On-state resistance: 3.37mΩ
Power dissipation: 74W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 447A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1057 Stücke:
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31+2.35 EUR
39+1.86 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
Mindestbestellmenge: 31
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PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA PSMN017-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
On-state resistance: 36.1mΩ
Power dissipation: 74W
Gate-source voltage: ±20V
Drain current: 44A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1043 Stücke:
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74+0.97 EUR
87+0.82 EUR
107+0.67 EUR
120+0.6 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.47 EUR
Mindestbestellmenge: 74
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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 609 Stücke:
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41+1.74 EUR
53+1.37 EUR
60+1.2 EUR
100+1.1 EUR
250+1.06 EUR
500+0.94 EUR
Mindestbestellmenge: 41
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 33.2nC
On-state resistance: 12.1mΩ
Power dissipation: 95W
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 60V
Pulsed drain current: 212A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 53 Stücke:
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53+1.34 EUR
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 110nC
On-state resistance: 2.125mΩ
Power dissipation: 272W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 25V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
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34+2.14 EUR
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 8.3nC
On-state resistance: 27.2mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Drain current: 32A
Drain-source voltage: 30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
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PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 13nC
On-state resistance: 49.6mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain current: 29A
Drain-source voltage: 60V
Pulsed drain current: 116A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1471 Stücke:
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139+0.52 EUR
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167+0.43 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 66nC
On-state resistance: 1.35mΩ
Power dissipation: 179W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 25V
Pulsed drain current: 1133A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1391 Stücke:
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55+1.32 EUR
69+1.04 EUR
80+0.9 EUR
100+0.86 EUR
250+0.79 EUR
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PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 NEXPERIA PSMN2R2-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 100A
Drain-source voltage: 30V
Gate charge: 55nC
On-state resistance: 4.6mΩ
Power dissipation: 141W
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
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PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 39.2nC
On-state resistance: 103.5mΩ
Power dissipation: 94.9W
Drain current: 21.3A
Drain-source voltage: 100V
Pulsed drain current: 120A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 589 Stücke:
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70+1.03 EUR
94+0.77 EUR
103+0.69 EUR
112+0.64 EUR
250+0.61 EUR
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PSMN4R6-60BS,118 PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 715 Stücke:
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33+2.19 EUR
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100+1.83 EUR
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PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 NEXPERIA PSMN2R0-30YLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 87nC
On-state resistance: 3.8mΩ
Power dissipation: 238W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 1015A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1317 Stücke:
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100+1.32 EUR
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PSMN3R0-60PS,127 PSMN3R0-60PS,127 NEXPERIA PSMN3R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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PSMN3R9-60PSQ PSMN3R9-60PSQ NEXPERIA PSMN3R9-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
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PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 117nC
auf Bestellung 42 Stücke:
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26+2.79 EUR
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PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 NEXPERIA PSMN7R0-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 7.9nC
On-state resistance: 7.6mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Drain current: 61A
Drain-source voltage: 30V
Pulsed drain current: 245A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1390 Stücke:
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82+0.87 EUR
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132+0.54 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 64nC
On-state resistance: 35.8mΩ
Power dissipation: 130W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1369 Stücke:
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32+2.26 EUR
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PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
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23+3.1 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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PSMN7R0-60YS,115 PSMN7R0-60YS,115 NEXPERIA PSMN7R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 45nC
On-state resistance: 14.7mΩ
Power dissipation: 117W
Gate-source voltage: ±20V
Drain current: 63A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1422 Stücke:
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33+2.19 EUR
44+1.63 EUR
49+1.47 EUR
100+1.37 EUR
250+1.32 EUR
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PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 781 Stücke:
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22+3.4 EUR
23+3.15 EUR
24+3 EUR
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PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
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PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060PW,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 232 Stücke:
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112+0.64 EUR
124+0.58 EUR
135+0.53 EUR
141+0.51 EUR
192+0.46 EUR
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74LV4060DB,112 74LV4060DB,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 141 Stücke:
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79+0.92 EUR
88+0.82 EUR
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HEF4541BT-Q100J NEXPERIA HEF4541B_Q100.pdf Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
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HEF4541BT,118 NEXPERIA HEF4541B.pdf Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
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PUMH17,115 PUMH17,115 NEXPERIA PEMH17_PUMH17.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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1N4531,113 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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1N4531,133 1N4531,133 NEXPERIA 1N4531_2.pdf Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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PDTA144ET,215 PDTA144E_SER.pdf
PDTA144ET,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 180MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Produkt ist nicht verfügbar
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PDTA144WT,215 PDTA144W_SERIES.pdf
PDTA144WT,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
Produkt ist nicht verfügbar
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PDTA144WU,115 PDTA144W_SERIES.pdf
PDTA144WU,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144TT,215 PDTA144T_SERIES.pdf
PDTA144TT,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Current gain: 100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144TU,115
PDTA144TU,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VT,215 PDTA144V_SER.pdf
PDTA144VT,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VU,115 PDTA144V_SER.pdf
PDTA144VU,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP122,115 BSP122.pdf
BSP122,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.55A
On-state resistance: 2.5Ω
Power dissipation: 1.5W
Gate-source voltage: ±2V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
137+0.52 EUR
175+0.41 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
BSP126,115 BSP126.pdf
BSP126,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 250V
Drain current: 0.375A
On-state resistance: 7.5Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
117+0.61 EUR
137+0.52 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
BSP19,115 BSP19.pdf
BSP19,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 1.2W
Current gain: 40
Collector-emitter voltage: 400V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX54-16,115 BCX54_SER.pdf
BCX54-16,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX54-16,135 BCX54_SER.pdf
BCX54-16,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX54-16-QX BCX54-Q_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74ALVCH16501DGGY 74ALVCH16501DGGY.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PESD24VS2UT,215 PESD24VS2UT.pdf
PESD24VS2UT,215
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.16kW
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Version: ESD
auf Bestellung 16608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
196+0.37 EUR
315+0.23 EUR
500+0.16 EUR
1000+0.12 EUR
3000+0.11 EUR
15000+0.099 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
PESD3V3L1BAZ PESD3V3L1BA.pdf
PESD3V3L1BAZ
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PESD3V6Z1BCSFYL PESD3V6Z1BCSF.pdf
PESD3V6Z1BCSFYL
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHC125D,118 74VHC_VHCT125.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: VHC
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHC125PW,118 74VHC_VHCT125.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: VHC
Case: TSSOP14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 56nC
On-state resistance: 8.3mΩ
Power dissipation: 130W
Gate-source voltage: ±20V
Drain current: 74A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
38+1.93 EUR
100+1.73 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R1-60YLX PSMN4R1-60YL.pdf
PSMN4R1-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 103nC
On-state resistance: 3.3mΩ
Power dissipation: 238W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 60V
Pulsed drain current: 593A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
49+1.49 EUR
54+1.33 EUR
100+1.23 EUR
250+1.19 EUR
500+1.06 EUR
1000+1.04 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-40VLDX PSMN013-40VLD.pdf
PSMN013-40VLDX
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
69+1.04 EUR
82+0.87 EUR
100+0.79 EUR
250+0.73 EUR
500+0.69 EUR
1000+0.63 EUR
1500+0.61 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R0-30YLC,115 PSMN1R0-30YLD.pdf
PSMN1R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 70nC
On-state resistance: 1.15mΩ
Power dissipation: 272W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
37+1.94 EUR
41+1.76 EUR
100+1.63 EUR
250+1.56 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R0-30YLDX PSMN4R0-30YLD.pdf
PSMN4R0-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 9.1nC
On-state resistance: 4.4mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Drain current: 95A
Drain-source voltage: 30V
Pulsed drain current: 378A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
144+0.5 EUR
160+0.45 EUR
172+0.42 EUR
250+0.4 EUR
500+0.37 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R5-60YLX PSMN7R5-60YL.pdf
PSMN7R5-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 60.6nC
On-state resistance: 19.7mΩ
Power dissipation: 147W
Drain current: 61A
Drain-source voltage: 60V
Pulsed drain current: 346A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
60+1.2 EUR
67+1.07 EUR
100+1 EUR
250+0.94 EUR
500+0.86 EUR
1000+0.84 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
20+3.59 EUR
22+3.3 EUR
25+3.19 EUR
50+2.99 EUR
100+2.82 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R5-60YS,115 PSMN8R5-60YS.pdf
PSMN8R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 39nC
On-state resistance: 5.6mΩ
Power dissipation: 106W
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 60V
Pulsed drain current: 303A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
63+1.14 EUR
68+1.06 EUR
100+1 EUR
250+0.9 EUR
500+0.86 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-30YL,115 PSMN3R5-30YL.pdf
PSMN3R5-30YL,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 19nC
On-state resistance: 3.37mΩ
Power dissipation: 74W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 447A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1057 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
39+1.86 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 20nC
On-state resistance: 36.1mΩ
Power dissipation: 74W
Gate-source voltage: ±20V
Drain current: 44A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
87+0.82 EUR
107+0.67 EUR
120+0.6 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.47 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
53+1.37 EUR
60+1.2 EUR
100+1.1 EUR
250+1.06 EUR
500+0.94 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 33.2nC
On-state resistance: 12.1mΩ
Power dissipation: 95W
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 60V
Pulsed drain current: 212A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.34 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 110nC
On-state resistance: 2.125mΩ
Power dissipation: 272W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 25V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
34+2.14 EUR
40+1.8 EUR
100+1.63 EUR
250+1.5 EUR
500+1.43 EUR
1000+1.29 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 8.3nC
On-state resistance: 27.2mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Drain current: 32A
Drain-source voltage: 30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
119+0.6 EUR
131+0.55 EUR
181+0.4 EUR
250+0.36 EUR
500+0.33 EUR
1000+0.32 EUR
1500+0.28 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
29+2.52 EUR
30+2.42 EUR
100+2.35 EUR
250+2.26 EUR
500+2.2 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 13nC
On-state resistance: 49.6mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain current: 29A
Drain-source voltage: 60V
Pulsed drain current: 116A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
139+0.52 EUR
154+0.46 EUR
167+0.43 EUR
250+0.41 EUR
500+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 66nC
On-state resistance: 1.35mΩ
Power dissipation: 179W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 25V
Pulsed drain current: 1133A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
69+1.04 EUR
80+0.9 EUR
100+0.86 EUR
250+0.79 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 100A
Drain-source voltage: 30V
Gate charge: 55nC
On-state resistance: 4.6mΩ
Power dissipation: 141W
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 39.2nC
On-state resistance: 103.5mΩ
Power dissipation: 94.9W
Drain current: 21.3A
Drain-source voltage: 100V
Pulsed drain current: 120A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
94+0.77 EUR
103+0.69 EUR
112+0.64 EUR
250+0.61 EUR
500+0.55 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
33+2.19 EUR
37+1.97 EUR
100+1.83 EUR
250+1.74 EUR
500+1.57 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 87nC
On-state resistance: 3.8mΩ
Power dissipation: 238W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 1015A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
52+1.39 EUR
100+1.32 EUR
250+1.2 EUR
500+1.17 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R0-60PS,127 PSMN3R0-60PS.pdf
PSMN3R0-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
18+3.99 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 117nC
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
29+2.53 EUR
32+2.26 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 7.9nC
On-state resistance: 7.6mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Drain current: 61A
Drain-source voltage: 30V
Pulsed drain current: 245A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
110+0.65 EUR
123+0.58 EUR
132+0.54 EUR
250+0.52 EUR
500+0.46 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 64nC
On-state resistance: 35.8mΩ
Power dissipation: 130W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
43+1.67 EUR
52+1.4 EUR
100+1.26 EUR
250+1.17 EUR
500+1.12 EUR
1000+1 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
67+1.07 EUR
72+1 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
16+4.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 45nC
On-state resistance: 14.7mΩ
Power dissipation: 117W
Gate-source voltage: ±20V
Drain current: 63A
Drain-source voltage: 60V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1422 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
44+1.63 EUR
49+1.47 EUR
100+1.37 EUR
250+1.32 EUR
500+1.17 EUR
1000+1.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
23+3.15 EUR
24+3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LV4060PW,112 74LV4060.pdf
74LV4060PW,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
124+0.58 EUR
135+0.53 EUR
141+0.51 EUR
192+0.46 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
74LV4060DB,112 74LV4060.pdf
74LV4060DB,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
HEF4541BT-Q100J HEF4541B_Q100.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HEF4541BT,118 HEF4541B.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH17,115 PEMH17_PUMH17.pdf
PUMH17,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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1N4531,113 1N4531_2.pdf
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4531,133 1N4531_2.pdf
1N4531,133
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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