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NCR420UX NCR420UX NEXPERIA NCR420U_NCR421U.pdf Category: LED drivers
Description: IC: driver; LED driver; SC74,SOT457,TSOP6; 11mA; 40V; Uin: 40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SC74; SOT457; TSOP6
Output current: 11mA
Output voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Input voltage: 40V
Maximum output current: 200mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NGW30T60M3DFQ NEXPERIA NGW30T60M3DF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 45A; 142W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 45A
Power dissipation: 142W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 270ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NPS4053GHZ NEXPERIA NPS4053.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 2A; SMD; HWSON6; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Mounting: SMD
Case: HWSON6
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 2A
Supply voltage: 2.5...5.5V DC
On-state resistance: 55mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NSF040120L3A0Q NSF040120L3A0Q NEXPERIA NSF040120L3A0.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Technology: SiC
Mounting: THT
Power dissipation: 313W
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.98 EUR
4+ 22.68 EUR
Mindestbestellmenge: 3
NSF080120L3A0Q NSF080120L3A0Q NEXPERIA NSF080120L3A0.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
5+ 14.66 EUR
Mindestbestellmenge: 4
NUP1301-QR NUP1301-QR NEXPERIA Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUP1301,215 NUP1301,215 NEXPERIA NUP1301.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)
625+0.12 EUR
760+ 0.095 EUR
1040+ 0.069 EUR
1100+ 0.065 EUR
Mindestbestellmenge: 625
NUP1301U-QX NUP1301U-QX NEXPERIA NUP1301U-Q.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUP1301U,115 NUP1301U,115 NEXPERIA NUP1301U.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2090 Stücke:
Lieferzeit 7-14 Tag (e)
600+0.12 EUR
635+ 0.11 EUR
835+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 600
NX138AKR NX138AKR NEXPERIA NX138AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5355 Stücke:
Lieferzeit 7-14 Tag (e)
1015+0.071 EUR
1470+ 0.049 EUR
2025+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1015
NX138AKVL NEXPERIA NX138AK.pdf NX138AKVL SMD N channel transistors
auf Bestellung 9820 Stücke:
Lieferzeit 7-14 Tag (e)
1316+0.054 EUR
2273+ 0.031 EUR
2404+ 0.03 EUR
Mindestbestellmenge: 1316
NX138BKR NX138BKR NEXPERIA NX138BK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 0.31W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.31W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.49nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NX138BKWX NX138BKWX NEXPERIA NX138BKW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135mA; Idm: 855A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135mA
Pulsed drain current: 855A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
100+ 0.72 EUR
380+ 0.19 EUR
1030+ 0.07 EUR
Mindestbestellmenge: 10
NX2301P,215 NX2301P,215 NEXPERIA NX2301P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3443 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
642+ 0.11 EUR
725+ 0.099 EUR
893+ 0.08 EUR
944+ 0.076 EUR
Mindestbestellmenge: 295
NX3008CBKS,115 NX3008CBKS,115 NEXPERIA NX3008CBKS.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.35/-0.2A; 990mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.35/-0.2A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4/4.1Ω
Mounting: SMD
Gate charge: 0.68/0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1844 Stücke:
Lieferzeit 7-14 Tag (e)
298+0.24 EUR
496+ 0.14 EUR
556+ 0.13 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 298
NX3008CBKV,115 NX3008CBKV,115 NEXPERIA NX3008CBKV.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.4/-0.22A; 1.09W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.4/-0.22A
Power dissipation: 1.09W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 1.4/4.1Ω
Mounting: SMD
Gate charge: 0.68/0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008NBK,215 NX3008NBK,215 NEXPERIA NX3008NBK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.68nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Drain-source voltage: 30V
Drain current: 0.4A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2230 Stücke:
Lieferzeit 7-14 Tag (e)
1090+0.066 EUR
1210+ 0.059 EUR
1600+ 0.045 EUR
1690+ 0.042 EUR
Mindestbestellmenge: 1090
NX3008NBKS,115 NX3008NBKS,115 NEXPERIA NX3008NBKS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Power dissipation: 0.28W
Gate charge: 0.68nC
Polarisation: unipolar
Drain current: 0.35A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
272+0.26 EUR
417+ 0.17 EUR
463+ 0.15 EUR
614+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 272
NX3008NBKV,115 NX3008NBKV,115 NEXPERIA NX3008NBKV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 330mW; SOT666
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.33W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008NBKW,115 NX3008NBKW,115 NEXPERIA NX3008NBKW-DTE.pdf NX3008NBKW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7653 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
311+ 0.23 EUR
421+ 0.17 EUR
592+ 0.12 EUR
752+ 0.095 EUR
1389+ 0.051 EUR
1471+ 0.049 EUR
Mindestbestellmenge: 209
NX3008PBK,215 NX3008PBK,215 NEXPERIA NX3008PBK.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.23A; 420mW; SOT23,TO236AB
Kind of package: reel; tape
Power dissipation: 0.42W
Polarisation: unipolar
Gate charge: 0.72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 4.1Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1290 Stücke:
Lieferzeit 7-14 Tag (e)
490+0.15 EUR
1040+ 0.069 EUR
1150+ 0.062 EUR
1290+ 0.056 EUR
Mindestbestellmenge: 490
NX3008PBKS,115 NX3008PBKS,115 NEXPERIA NX3008PBKS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Power dissipation: 80mW
Gate charge: 0.72nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7665 Stücke:
Lieferzeit 7-14 Tag (e)
321+0.22 EUR
477+ 0.15 EUR
527+ 0.14 EUR
680+ 0.11 EUR
720+ 0.099 EUR
Mindestbestellmenge: 321
NX3008PBKV,115 NX3008PBKV,115 NEXPERIA NX3008PBKV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.22A; 330mW; SOT666
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.22A
Power dissipation: 0.33W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008PBKW,115 NX3008PBKW,115 NEXPERIA NX3008PBKW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 260mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -200mA
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3274 Stücke:
Lieferzeit 7-14 Tag (e)
596+0.12 EUR
831+ 0.086 EUR
921+ 0.078 EUR
1158+ 0.062 EUR
1226+ 0.058 EUR
Mindestbestellmenge: 596
NX3020NAK,215 NX3020NAK,215 NEXPERIA NX3020NAK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125mA; Idm: 0.8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.125A
Pulsed drain current: 0.8A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5680 Stücke:
Lieferzeit 7-14 Tag (e)
1390+0.051 EUR
1475+ 0.049 EUR
2025+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1390
NX3020NAKS,115 NX3020NAKS,115 NEXPERIA NX3020NAKS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 110mA; Idm: 0.72A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Pulsed drain current: 0.72A
Power dissipation: 375mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1915 Stücke:
Lieferzeit 7-14 Tag (e)
650+0.11 EUR
755+ 0.095 EUR
905+ 0.079 EUR
955+ 0.075 EUR
3000+ 0.072 EUR
Mindestbestellmenge: 650
NX3020NAKV,115 NX3020NAKV,115 NEXPERIA NX3020NAKV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3725 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.24 EUR
455+ 0.16 EUR
545+ 0.13 EUR
750+ 0.095 EUR
795+ 0.09 EUR
4000+ 0.087 EUR
Mindestbestellmenge: 300
NX3020NAKW,115 NX3020NAKW,115 NEXPERIA NX3020NAKW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3390 Stücke:
Lieferzeit 7-14 Tag (e)
667+0.11 EUR
1107+ 0.065 EUR
1232+ 0.058 EUR
1548+ 0.046 EUR
1634+ 0.044 EUR
Mindestbestellmenge: 667
NX7002AK,215 NX7002AK,215 NEXPERIA NX7002AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 325mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Power dissipation: 325mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 6.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12068 Stücke:
Lieferzeit 7-14 Tag (e)
960+0.075 EUR
1580+ 0.045 EUR
1765+ 0.041 EUR
2340+ 0.031 EUR
2465+ 0.029 EUR
Mindestbestellmenge: 960
NX7002AKS,115 NX7002AKS,115 NEXPERIA NX7002AKS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 100mA; Idm: 0.68A; 330mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.1A
Pulsed drain current: 0.68A
Power dissipation: 0.33W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NX7002AKVL NX7002AKVL NEXPERIA NX7002AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120mA; Idm: 760mA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.76A
Case: SOT23; TO236AB
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5900 Stücke:
Lieferzeit 7-14 Tag (e)
1050+0.069 EUR
1600+ 0.045 EUR
1775+ 0.041 EUR
2350+ 0.031 EUR
2475+ 0.029 EUR
Mindestbestellmenge: 1050
NX7002AKW,115 NX7002AKW,115 NEXPERIA NX7002AKW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100mA; Idm: 0.68A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.1A
Pulsed drain current: 0.68A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3209 Stücke:
Lieferzeit 7-14 Tag (e)
1265+0.057 EUR
1475+ 0.048 EUR
1640+ 0.044 EUR
2140+ 0.033 EUR
2265+ 0.032 EUR
Mindestbestellmenge: 1265
NX7002BKMBYL NEXPERIA NX7002BKMB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.68W
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 5690 Stücke:
Lieferzeit 7-14 Tag (e)
916+0.078 EUR
1019+ 0.07 EUR
1399+ 0.051 EUR
1479+ 0.048 EUR
Mindestbestellmenge: 916
NX7002BKMYL NEXPERIA NX7002BKM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200mA
Pulsed drain current: 0.9A
Power dissipation: 350mW
Case: DFN1006-3; SOT883
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
NX7002BKR NX7002BKR NEXPERIA NX7002BK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; Idm: 0.9A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Pulsed drain current: 0.9A
Case: SOT23; TO236AB
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5615 Stücke:
Lieferzeit 7-14 Tag (e)
1100+0.065 EUR
1590+ 0.045 EUR
1765+ 0.041 EUR
2335+ 0.031 EUR
2470+ 0.029 EUR
Mindestbestellmenge: 1100
NX7002BKSX NX7002BKSX NEXPERIA NX7002BKS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC88; SOT363; TSSOP6
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
789+ 0.091 EUR
876+ 0.082 EUR
1089+ 0.066 EUR
1151+ 0.062 EUR
Mindestbestellmenge: 358
NX7002BKWX NX7002BKWX NEXPERIA NX7002BKW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
1175+0.061 EUR
1240+ 0.057 EUR
Mindestbestellmenge: 1175
NXB0101GS-Q100H NEXPERIA NXB0101GS-Q100H Level translators
Produkt ist nicht verfügbar
NXB0101GW-Q100H NEXPERIA NXB0101GW-Q100H Level translators
Produkt ist nicht verfügbar
NXB0101GWH NEXPERIA NXB0101.pdf NXB0101GWH Level translators
Produkt ist nicht verfügbar
NXB0102DC-Q100H NEXPERIA NXB0102_Q100.pdf NXB0102DC-Q100H Level translators
Produkt ist nicht verfügbar
NXB0102DCH NEXPERIA NXB0102.pdf NXB0102DCH Level translators
Produkt ist nicht verfügbar
NXB0102GTX NEXPERIA NXB0102.pdf NXB0102GTX Level translators
Produkt ist nicht verfügbar
NXB0104BQ-Q100X NEXPERIA NXB0104_Q100.pdf NXB0104BQ-Q100X Level translators
Produkt ist nicht verfügbar
NXB0104BQX NEXPERIA NXB0104.pdf NXB0104BQX Level translators
Produkt ist nicht verfügbar
NXB0104GU12-Q100X NEXPERIA NXB0104_Q100.pdf NXB0104GU12-Q100X Level translators
Produkt ist nicht verfügbar
NXB0104GU12X NEXPERIA NXB0104GU12X.pdf Category: Level translators
Description: IC: digital; 3-state,4bit,transceiver,translator; Ch: 1; CMOS
Mounting: SMD
Operating temperature: -40...125°C
Case: XQFN12
Kind of package: reel; tape
Supply voltage: 1.2...3.6V DC; 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Family: NXB
Kind of integrated circuit: 3-state; 4bit; transceiver; translator
Number of channels: 1
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
NXB0104PW-Q100J NEXPERIA NXB0104_Q100.pdf NXB0104PW-Q100J Level translators
Produkt ist nicht verfügbar
NXB0104PWJ NEXPERIA NXB0104.pdf NXB0104PWJ Level translators
Produkt ist nicht verfügbar
NXB0108BQ-Q100X NEXPERIA NXB0108_Q100.pdf NXB0108BQ-Q100X Level translators
Produkt ist nicht verfügbar
NXB0108BQX NEXPERIA NXB0108.pdf NXB0108BQX Level translators
auf Bestellung 2847 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.35 EUR
108+ 0.66 EUR
114+ 0.63 EUR
Mindestbestellmenge: 53
NXB0108PW-Q100J NEXPERIA NXB0108_Q100.pdf NXB0108PW-Q100J Level translators
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
99+ 0.73 EUR
105+ 0.69 EUR
2500+ 0.68 EUR
Mindestbestellmenge: 49
NXB0108PWJ NEXPERIA NXB0108.pdf NXB0108PWJ Level translators
Produkt ist nicht verfügbar
NXP3875GR NXP3875GR NEXPERIA NXP3875Y_NXP3875G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SOT23,TO236AB
Frequency: 80MHz
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 200mW
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.15A
Pulsed collector current: 0.2A
Current gain: 200...400
Polarisation: bipolar
Produkt ist nicht verfügbar
NXS0101GMX NEXPERIA NXS0101.pdf NXS0101GMX Level translators
Produkt ist nicht verfügbar
NXS0101GSH NEXPERIA NXS0101.pdf NXS0101GSH Level translators
Produkt ist nicht verfügbar
NXS0101GW-Q100H NEXPERIA NXS0101GW-Q100H Level translators
Produkt ist nicht verfügbar
NXS0102DC-Q100H NEXPERIA NXS0102_Q100.pdf NXS0102DC-Q100H Level translators
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 70
NXS0102DCH NEXPERIA NXS0102.pdf NXS0102DCH Level translators
Produkt ist nicht verfügbar
NXS0102GTX NEXPERIA NXS0102GTX Level translators
Produkt ist nicht verfügbar
NCR420UX NCR420U_NCR421U.pdf
NCR420UX
Hersteller: NEXPERIA
Category: LED drivers
Description: IC: driver; LED driver; SC74,SOT457,TSOP6; 11mA; 40V; Uin: 40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SC74; SOT457; TSOP6
Output current: 11mA
Output voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Input voltage: 40V
Maximum output current: 200mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NGW30T60M3DFQ NGW30T60M3DF.pdf
Hersteller: NEXPERIA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 45A; 142W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 45A
Power dissipation: 142W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 270ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NPS4053GHZ NPS4053.pdf
Hersteller: NEXPERIA
Category: Power switches - integrated circuits
Description: IC: power switch; 2A; SMD; HWSON6; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Mounting: SMD
Case: HWSON6
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 2A
Supply voltage: 2.5...5.5V DC
On-state resistance: 55mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NSF040120L3A0Q NSF040120L3A0.pdf
NSF040120L3A0Q
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Technology: SiC
Mounting: THT
Power dissipation: 313W
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.98 EUR
4+ 22.68 EUR
Mindestbestellmenge: 3
NSF080120L3A0Q NSF080120L3A0.pdf
NSF080120L3A0Q
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+17.88 EUR
5+ 14.66 EUR
Mindestbestellmenge: 4
NUP1301-QR
NUP1301-QR
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUP1301,215 NUP1301.pdf
NUP1301,215
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
625+0.12 EUR
760+ 0.095 EUR
1040+ 0.069 EUR
1100+ 0.065 EUR
Mindestbestellmenge: 625
NUP1301U-QX NUP1301U-Q.pdf
NUP1301U-QX
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUP1301U,115 NUP1301U.pdf
NUP1301U,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2090 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
600+0.12 EUR
635+ 0.11 EUR
835+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 600
NX138AKR NX138AK.pdf
NX138AKR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5355 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1015+0.071 EUR
1470+ 0.049 EUR
2025+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1015
NX138AKVL NX138AK.pdf
Hersteller: NEXPERIA
NX138AKVL SMD N channel transistors
auf Bestellung 9820 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1316+0.054 EUR
2273+ 0.031 EUR
2404+ 0.03 EUR
Mindestbestellmenge: 1316
NX138BKR NX138BK.pdf
NX138BKR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 0.31W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.31W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.49nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NX138BKWX NX138BKW.pdf
NX138BKWX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135mA; Idm: 855A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135mA
Pulsed drain current: 855A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.15 EUR
100+ 0.72 EUR
380+ 0.19 EUR
1030+ 0.07 EUR
Mindestbestellmenge: 10
NX2301P,215 NX2301P.pdf
NX2301P,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3443 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
642+ 0.11 EUR
725+ 0.099 EUR
893+ 0.08 EUR
944+ 0.076 EUR
Mindestbestellmenge: 295
NX3008CBKS,115 NX3008CBKS.pdf
NX3008CBKS,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.35/-0.2A; 990mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.35/-0.2A
Power dissipation: 0.99W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4/4.1Ω
Mounting: SMD
Gate charge: 0.68/0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1844 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
298+0.24 EUR
496+ 0.14 EUR
556+ 0.13 EUR
695+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 298
NX3008CBKV,115 NX3008CBKV.pdf
NX3008CBKV,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.4/-0.22A; 1.09W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.4/-0.22A
Power dissipation: 1.09W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 1.4/4.1Ω
Mounting: SMD
Gate charge: 0.68/0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008NBK,215 NX3008NBK.pdf
NX3008NBK,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.68nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Drain-source voltage: 30V
Drain current: 0.4A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2230 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1090+0.066 EUR
1210+ 0.059 EUR
1600+ 0.045 EUR
1690+ 0.042 EUR
Mindestbestellmenge: 1090
NX3008NBKS,115 NX3008NBKS.pdf
NX3008NBKS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Power dissipation: 0.28W
Gate charge: 0.68nC
Polarisation: unipolar
Drain current: 0.35A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
272+0.26 EUR
417+ 0.17 EUR
463+ 0.15 EUR
614+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 272
NX3008NBKV,115 NX3008NBKV.pdf
NX3008NBKV,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 330mW; SOT666
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.33W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008NBKW,115 NX3008NBKW-DTE.pdf NX3008NBKW.pdf
NX3008NBKW,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7653 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
311+ 0.23 EUR
421+ 0.17 EUR
592+ 0.12 EUR
752+ 0.095 EUR
1389+ 0.051 EUR
1471+ 0.049 EUR
Mindestbestellmenge: 209
NX3008PBK,215 NX3008PBK.pdf
NX3008PBK,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.23A; 420mW; SOT23,TO236AB
Kind of package: reel; tape
Power dissipation: 0.42W
Polarisation: unipolar
Gate charge: 0.72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 4.1Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1290 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
490+0.15 EUR
1040+ 0.069 EUR
1150+ 0.062 EUR
1290+ 0.056 EUR
Mindestbestellmenge: 490
NX3008PBKS,115 NX3008PBKS.pdf
NX3008PBKS,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Power dissipation: 80mW
Gate charge: 0.72nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7665 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
321+0.22 EUR
477+ 0.15 EUR
527+ 0.14 EUR
680+ 0.11 EUR
720+ 0.099 EUR
Mindestbestellmenge: 321
NX3008PBKV,115 NX3008PBKV.pdf
NX3008PBKV,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.22A; 330mW; SOT666
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.22A
Power dissipation: 0.33W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NX3008PBKW,115 NX3008PBKW.pdf
NX3008PBKW,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 260mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -200mA
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3274 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
596+0.12 EUR
831+ 0.086 EUR
921+ 0.078 EUR
1158+ 0.062 EUR
1226+ 0.058 EUR
Mindestbestellmenge: 596
NX3020NAK,215 NX3020NAK.pdf
NX3020NAK,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125mA; Idm: 0.8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.125A
Pulsed drain current: 0.8A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5680 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1390+0.051 EUR
1475+ 0.049 EUR
2025+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1390
NX3020NAKS,115 NX3020NAKS.pdf
NX3020NAKS,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 110mA; Idm: 0.72A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Pulsed drain current: 0.72A
Power dissipation: 375mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1915 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.11 EUR
755+ 0.095 EUR
905+ 0.079 EUR
955+ 0.075 EUR
3000+ 0.072 EUR
Mindestbestellmenge: 650
NX3020NAKV,115 NX3020NAKV.pdf
NX3020NAKV,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3725 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
455+ 0.16 EUR
545+ 0.13 EUR
750+ 0.095 EUR
795+ 0.09 EUR
4000+ 0.087 EUR
Mindestbestellmenge: 300
NX3020NAKW,115 NX3020NAKW.pdf
NX3020NAKW,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
667+0.11 EUR
1107+ 0.065 EUR
1232+ 0.058 EUR
1548+ 0.046 EUR
1634+ 0.044 EUR
Mindestbestellmenge: 667
NX7002AK,215 NX7002AK.pdf
NX7002AK,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 325mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Power dissipation: 325mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 6.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12068 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
960+0.075 EUR
1580+ 0.045 EUR
1765+ 0.041 EUR
2340+ 0.031 EUR
2465+ 0.029 EUR
Mindestbestellmenge: 960
NX7002AKS,115 NX7002AKS.pdf
NX7002AKS,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 100mA; Idm: 0.68A; 330mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.1A
Pulsed drain current: 0.68A
Power dissipation: 0.33W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NX7002AKVL NX7002AK.pdf
NX7002AKVL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120mA; Idm: 760mA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.76A
Case: SOT23; TO236AB
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1050+0.069 EUR
1600+ 0.045 EUR
1775+ 0.041 EUR
2350+ 0.031 EUR
2475+ 0.029 EUR
Mindestbestellmenge: 1050
NX7002AKW,115 NX7002AKW.pdf
NX7002AKW,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100mA; Idm: 0.68A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.1A
Pulsed drain current: 0.68A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Gate charge: 0.43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3209 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1265+0.057 EUR
1475+ 0.048 EUR
1640+ 0.044 EUR
2140+ 0.033 EUR
2265+ 0.032 EUR
Mindestbestellmenge: 1265
NX7002BKMBYL NX7002BKMB.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.9A
Power dissipation: 0.68W
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 5690 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
916+0.078 EUR
1019+ 0.07 EUR
1399+ 0.051 EUR
1479+ 0.048 EUR
Mindestbestellmenge: 916
NX7002BKMYL NX7002BKM.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 200mA; Idm: 0.9A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200mA
Pulsed drain current: 0.9A
Power dissipation: 350mW
Case: DFN1006-3; SOT883
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
NX7002BKR NX7002BK.pdf
NX7002BKR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; Idm: 0.9A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Pulsed drain current: 0.9A
Case: SOT23; TO236AB
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5615 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1100+0.065 EUR
1590+ 0.045 EUR
1765+ 0.041 EUR
2335+ 0.031 EUR
2470+ 0.029 EUR
Mindestbestellmenge: 1100
NX7002BKSX NX7002BKS.pdf
NX7002BKSX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC88; SOT363; TSSOP6
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
789+ 0.091 EUR
876+ 0.082 EUR
1089+ 0.066 EUR
1151+ 0.062 EUR
Mindestbestellmenge: 358
NX7002BKWX NX7002BKW.pdf
NX7002BKWX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1175+0.061 EUR
1240+ 0.057 EUR
Mindestbestellmenge: 1175
NXB0101GS-Q100H
Hersteller: NEXPERIA
NXB0101GS-Q100H Level translators
Produkt ist nicht verfügbar
NXB0101GW-Q100H
Hersteller: NEXPERIA
NXB0101GW-Q100H Level translators
Produkt ist nicht verfügbar
NXB0101GWH NXB0101.pdf
Hersteller: NEXPERIA
NXB0101GWH Level translators
Produkt ist nicht verfügbar
NXB0102DC-Q100H NXB0102_Q100.pdf
Hersteller: NEXPERIA
NXB0102DC-Q100H Level translators
Produkt ist nicht verfügbar
NXB0102DCH NXB0102.pdf
Hersteller: NEXPERIA
NXB0102DCH Level translators
Produkt ist nicht verfügbar
NXB0102GTX NXB0102.pdf
Hersteller: NEXPERIA
NXB0102GTX Level translators
Produkt ist nicht verfügbar
NXB0104BQ-Q100X NXB0104_Q100.pdf
Hersteller: NEXPERIA
NXB0104BQ-Q100X Level translators
Produkt ist nicht verfügbar
NXB0104BQX NXB0104.pdf
Hersteller: NEXPERIA
NXB0104BQX Level translators
Produkt ist nicht verfügbar
NXB0104GU12-Q100X NXB0104_Q100.pdf
Hersteller: NEXPERIA
NXB0104GU12-Q100X Level translators
Produkt ist nicht verfügbar
NXB0104GU12X NXB0104GU12X.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 3-state,4bit,transceiver,translator; Ch: 1; CMOS
Mounting: SMD
Operating temperature: -40...125°C
Case: XQFN12
Kind of package: reel; tape
Supply voltage: 1.2...3.6V DC; 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Family: NXB
Kind of integrated circuit: 3-state; 4bit; transceiver; translator
Number of channels: 1
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
NXB0104PW-Q100J NXB0104_Q100.pdf
Hersteller: NEXPERIA
NXB0104PW-Q100J Level translators
Produkt ist nicht verfügbar
NXB0104PWJ NXB0104.pdf
Hersteller: NEXPERIA
NXB0104PWJ Level translators
Produkt ist nicht verfügbar
NXB0108BQ-Q100X NXB0108_Q100.pdf
Hersteller: NEXPERIA
NXB0108BQ-Q100X Level translators
Produkt ist nicht verfügbar
NXB0108BQX NXB0108.pdf
Hersteller: NEXPERIA
NXB0108BQX Level translators
auf Bestellung 2847 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.35 EUR
108+ 0.66 EUR
114+ 0.63 EUR
Mindestbestellmenge: 53
NXB0108PW-Q100J NXB0108_Q100.pdf
Hersteller: NEXPERIA
NXB0108PW-Q100J Level translators
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
99+ 0.73 EUR
105+ 0.69 EUR
2500+ 0.68 EUR
Mindestbestellmenge: 49
NXB0108PWJ NXB0108.pdf
Hersteller: NEXPERIA
NXB0108PWJ Level translators
Produkt ist nicht verfügbar
NXP3875GR NXP3875Y_NXP3875G.pdf
NXP3875GR
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SOT23,TO236AB
Frequency: 80MHz
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 200mW
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.15A
Pulsed collector current: 0.2A
Current gain: 200...400
Polarisation: bipolar
Produkt ist nicht verfügbar
NXS0101GMX NXS0101.pdf
Hersteller: NEXPERIA
NXS0101GMX Level translators
Produkt ist nicht verfügbar
NXS0101GSH NXS0101.pdf
Hersteller: NEXPERIA
NXS0101GSH Level translators
Produkt ist nicht verfügbar
NXS0101GW-Q100H
Hersteller: NEXPERIA
NXS0101GW-Q100H Level translators
Produkt ist nicht verfügbar
NXS0102DC-Q100H NXS0102_Q100.pdf
Hersteller: NEXPERIA
NXS0102DC-Q100H Level translators
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
161+ 0.44 EUR
171+ 0.42 EUR
Mindestbestellmenge: 70
NXS0102DCH NXS0102.pdf
Hersteller: NEXPERIA
NXS0102DCH Level translators
Produkt ist nicht verfügbar
NXS0102GTX
Hersteller: NEXPERIA
NXS0102GTX Level translators
Produkt ist nicht verfügbar
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