Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BF823,215 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB Case: SOT23; TO236AB Frequency: 60MHz Collector-emitter voltage: 250V Collector current: 50mA Type of transistor: PNP Power dissipation: 0.25W Polarisation: bipolar Kind of package: 7 inch reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2941 Stücke: Lieferzeit 7-14 Tag (e) |
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BF824,215 | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BF840,215 | NEXPERIA |
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auf Bestellung 241 Stücke: Lieferzeit 7-14 Tag (e) |
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BFS19,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 20V; 30mA; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 30mA Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 65...225 Mounting: SMD Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BFS20,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 20V; 25mA; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 25mA Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 450MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1960 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH103,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.85A; 500mW; SOT23,TO236AB Drain-source voltage: 30V Drain current: 0.85A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SOT23; TO236AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68352 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH103BKR | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW Drain-source voltage: 30V Drain current: 1A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 0.33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 4A Mounting: SMD Case: SOT23; TO236AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH105,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.67A; 417mW; SOT23,TO236AB Drain-source voltage: 20V Drain current: 0.67A On-state resistance: 375mΩ Type of transistor: N-MOSFET Power dissipation: 417mW Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.9nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SOT23; TO236AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1515 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH108,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 830mW; SOT23,TO236AB Drain-source voltage: 30V Drain current: 1.2A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 0.83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT23; TO236AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3771 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH111BKR | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 0.13A Power dissipation: 364mW Case: SOT23; TO236AB Gate-source voltage: ±10V On-state resistance: 8.1Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4281 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH201,215 | NEXPERIA |
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auf Bestellung 4767 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH202,215 | NEXPERIA |
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auf Bestellung 2200 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH203,215 | NEXPERIA |
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auf Bestellung 3180 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH205G2R | NEXPERIA |
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auf Bestellung 7363 Stücke: Lieferzeit 7-14 Tag (e) |
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BSN20BKR | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 402mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.49nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3673 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP122,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223 Drain-source voltage: 200V Drain current: 0.55A On-state resistance: 2.5Ω Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±2V Power dissipation: 1.5W Case: SC73; SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 878 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP126,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223 Drain-source voltage: 250V Drain current: 0.375A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Power dissipation: 1.5W Case: SC73; SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 957 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP19,115 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223 Frequency: 70MHz Collector-emitter voltage: 400V Current gain: 40 Collector current: 0.1A Type of transistor: NPN Mounting: SMD Polarisation: bipolar Kind of package: reel; tape Power dissipation: 1.2W Case: SC73; SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 965 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP220,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223 Mounting: SMD Case: SC73; SOT223 Drain-source voltage: -220V Drain current: -0.225A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1255 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP225,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223 Drain-source voltage: -250V Drain current: -0.225A On-state resistance: 15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Case: SC73; SOT223 Kind of package: reel; tape Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 411 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP250,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W Case: SC73; SOT223 Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Power dissipation: 1.65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: DMOS Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -12A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2233 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP31,115 | NEXPERIA |
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auf Bestellung 2268 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP41,115 | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP50-QX | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP50,115 | NEXPERIA |
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auf Bestellung 1412 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP51-QX | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP51,115 | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP52-QX | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP52,115 | NEXPERIA |
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auf Bestellung 1406 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP60,115 | NEXPERIA |
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auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP61,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223 Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Collector-emitter voltage: 60V Collector current: 1A Type of transistor: PNP Power dissipation: 1.25W Polarisation: bipolar Kind of transistor: Darlington Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1467 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP62,115 | NEXPERIA |
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auf Bestellung 910 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP89,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223 Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Drain-source voltage: 240V Drain current: 0.375A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 839 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR14,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1683 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR16,215 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 200MHz Pulsed collector current: 0.8A Current gain: 50...300 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR19A-QR | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSR19A,215 | NEXPERIA |
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auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR33,115 | NEXPERIA |
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auf Bestellung 1640 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR41-QF | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 1.35W Polarisation: bipolar Case: SC62; SOT89 Collector-emitter voltage: 60V Current gain: 30...300 Collector current: 1A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR41-QX | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 1.35W Polarisation: bipolar Case: SC62; SOT89 Collector-emitter voltage: 60V Current gain: 30...300 Collector current: 1A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR41,115 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.35W Polarisation: bipolar Case: SC62; SOT89 Frequency: 100MHz Collector-emitter voltage: 60V Current gain: 30...300 Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
auf Bestellung 716 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR43-QX | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSR43,115 | NEXPERIA |
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auf Bestellung 1321 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.25W Polarisation: unipolar Features of semiconductor devices: logic level Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44991 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138AKAR | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.51nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1798 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BK,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35305 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BKS,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.32W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 593 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BKW,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3969 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138P,215 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58723 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138PS,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.42W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.8nC Pulsed drain current: 1.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6478 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138PW,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.32A Power dissipation: 0.26W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.8nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17146 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS192,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -240V Drain current: -120mA Power dissipation: 0.56W Case: SC62; SOT89 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Gate charge: 5nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSS63-QR | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSS63,215 | NEXPERIA |
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auf Bestellung 2845 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS64,215 | NEXPERIA |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS84,215 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.25W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19959 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AK,215 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.12A Power dissipation: 0.42W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Gate charge: 0.35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12861 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AKS,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -100mA Power dissipation: 445mW Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2551 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AKV,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET x2; unipolar; -50V; -110mA; Idm: -0.7A; 500mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.11A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Pulsed drain current: -0.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS84AKW,115 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.095A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1788 Stücke: Lieferzeit 7-14 Tag (e) |
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BF823,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 250V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: 7 inch reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 250V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: 7 inch reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
300+ | 0.24 EUR |
370+ | 0.19 EUR |
511+ | 0.14 EUR |
1129+ | 0.06 EUR |
1194+ | 0.06 EUR |
BF824,215 |
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Hersteller: NEXPERIA
BF824.215 PNP SMD transistors
BF824.215 PNP SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BF840,215 |
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Hersteller: NEXPERIA
BF840.215 NPN SMD transistors
BF840.215 NPN SMD transistors
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
163+ | 0.44 EUR |
241+ | 0.30 EUR |
475+ | 0.16 EUR |
45000+ | 0.10 EUR |
BFS19,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 30mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 30mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 65...225
Mounting: SMD
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 30mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 30mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 65...225
Mounting: SMD
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFS20,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 25mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 25mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 450MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 25mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 25mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 450MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
329+ | 0.22 EUR |
388+ | 0.18 EUR |
414+ | 0.17 EUR |
758+ | 0.09 EUR |
807+ | 0.09 EUR |
BSH103,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.85A; 500mW; SOT23,TO236AB
Drain-source voltage: 30V
Drain current: 0.85A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.85A; 500mW; SOT23,TO236AB
Drain-source voltage: 30V
Drain current: 0.85A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68352 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
257+ | 0.28 EUR |
332+ | 0.22 EUR |
371+ | 0.19 EUR |
463+ | 0.15 EUR |
800+ | 0.14 EUR |
BSH103BKR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW
Drain-source voltage: 30V
Drain current: 1A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW
Drain-source voltage: 30V
Drain current: 1A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
248+ | 0.29 EUR |
300+ | 0.24 EUR |
477+ | 0.15 EUR |
575+ | 0.12 EUR |
848+ | 0.08 EUR |
893+ | 0.08 EUR |
BSH105,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.67A; 417mW; SOT23,TO236AB
Drain-source voltage: 20V
Drain current: 0.67A
On-state resistance: 375mΩ
Type of transistor: N-MOSFET
Power dissipation: 417mW
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.67A; 417mW; SOT23,TO236AB
Drain-source voltage: 20V
Drain current: 0.67A
On-state resistance: 375mΩ
Type of transistor: N-MOSFET
Power dissipation: 417mW
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1515 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
288+ | 0.25 EUR |
376+ | 0.19 EUR |
421+ | 0.17 EUR |
451+ | 0.16 EUR |
BSH108,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 830mW; SOT23,TO236AB
Drain-source voltage: 30V
Drain current: 1.2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 830mW; SOT23,TO236AB
Drain-source voltage: 30V
Drain current: 1.2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23; TO236AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3771 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
163+ | 0.44 EUR |
191+ | 0.37 EUR |
283+ | 0.25 EUR |
336+ | 0.21 EUR |
468+ | 0.15 EUR |
496+ | 0.14 EUR |
BSH111BKR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.13A
Power dissipation: 364mW
Case: SOT23; TO236AB
Gate-source voltage: ±10V
On-state resistance: 8.1Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.13A
Power dissipation: 364mW
Case: SOT23; TO236AB
Gate-source voltage: ±10V
On-state resistance: 8.1Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4281 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
414+ | 0.17 EUR |
646+ | 0.11 EUR |
811+ | 0.09 EUR |
1484+ | 0.05 EUR |
1568+ | 0.05 EUR |
3000+ | 0.04 EUR |
BSH201,215 |
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Hersteller: NEXPERIA
BSH201.215 SMD P channel transistors
BSH201.215 SMD P channel transistors
auf Bestellung 4767 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
151+ | 0.47 EUR |
515+ | 0.14 EUR |
545+ | 0.13 EUR |
BSH202,215 |
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Hersteller: NEXPERIA
BSH202.215 SMD P channel transistors
BSH202.215 SMD P channel transistors
auf Bestellung 2200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
155+ | 0.46 EUR |
410+ | 0.17 EUR |
BSH203,215 |
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Hersteller: NEXPERIA
BSH203.215 SMD P channel transistors
BSH203.215 SMD P channel transistors
auf Bestellung 3180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
506+ | 0.14 EUR |
532+ | 0.13 EUR |
BSH205G2R |
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Hersteller: NEXPERIA
BSH205G2R SMD P channel transistors
BSH205G2R SMD P channel transistors
auf Bestellung 7363 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
127+ | 0.57 EUR |
736+ | 0.10 EUR |
782+ | 0.09 EUR |
45000+ | 0.09 EUR |
BSN20BKR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 402mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.49nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 402mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3673 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
329+ | 0.22 EUR |
400+ | 0.18 EUR |
627+ | 0.11 EUR |
765+ | 0.09 EUR |
1112+ | 0.06 EUR |
1174+ | 0.06 EUR |
BSP122,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Drain-source voltage: 200V
Drain current: 0.55A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±2V
Power dissipation: 1.5W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Drain-source voltage: 200V
Drain current: 0.55A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±2V
Power dissipation: 1.5W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 878 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
123+ | 0.58 EUR |
158+ | 0.45 EUR |
229+ | 0.31 EUR |
242+ | 0.30 EUR |
500+ | 0.28 EUR |
BSP126,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Drain-source voltage: 250V
Drain current: 0.375A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.5W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Drain-source voltage: 250V
Drain current: 0.375A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.5W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 957 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
132+ | 0.54 EUR |
147+ | 0.49 EUR |
185+ | 0.39 EUR |
195+ | 0.37 EUR |
BSP19,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Frequency: 70MHz
Collector-emitter voltage: 400V
Current gain: 40
Collector current: 0.1A
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 1.2W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Frequency: 70MHz
Collector-emitter voltage: 400V
Current gain: 40
Collector current: 0.1A
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 1.2W
Case: SC73; SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 965 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
116+ | 0.62 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
500+ | 0.31 EUR |
BSP220,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1255 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
96+ | 0.75 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
500+ | 0.41 EUR |
BSP225,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Drain-source voltage: -250V
Drain current: -0.225A
On-state resistance: 15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Drain-source voltage: -250V
Drain current: -0.225A
On-state resistance: 15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Case: SC73; SOT223
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 411 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.90 EUR |
114+ | 0.63 EUR |
151+ | 0.48 EUR |
159+ | 0.45 EUR |
200+ | 0.43 EUR |
BSP250,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Case: SC73; SOT223
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: DMOS
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Case: SC73; SOT223
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: DMOS
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2233 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
114+ | 0.63 EUR |
181+ | 0.40 EUR |
191+ | 0.37 EUR |
BSP31,115 |
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Hersteller: NEXPERIA
BSP31.115 PNP SMD transistors
BSP31.115 PNP SMD transistors
auf Bestellung 2268 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
96+ | 0.75 EUR |
275+ | 0.26 EUR |
290+ | 0.25 EUR |
BSP41,115 |
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Hersteller: NEXPERIA
BSP41.115 NPN SMD transistors
BSP41.115 NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP50-QX |
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Hersteller: NEXPERIA
BSP50-QX NPN SMD Darlington transistors
BSP50-QX NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP50,115 |
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Hersteller: NEXPERIA
BSP50.115 NPN SMD Darlington transistors
BSP50.115 NPN SMD Darlington transistors
auf Bestellung 1412 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.72 EUR |
278+ | 0.26 EUR |
295+ | 0.24 EUR |
BSP51-QX |
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Hersteller: NEXPERIA
BSP51-QX NPN SMD Darlington transistors
BSP51-QX NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP51,115 |
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Hersteller: NEXPERIA
BSP51.115 NPN SMD Darlington transistors
BSP51.115 NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP52-QX |
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Hersteller: NEXPERIA
BSP52-QX NPN SMD Darlington transistors
BSP52-QX NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP52,115 |
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Hersteller: NEXPERIA
BSP52.115 NPN SMD Darlington transistors
BSP52.115 NPN SMD Darlington transistors
auf Bestellung 1406 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
137+ | 0.52 EUR |
288+ | 0.25 EUR |
304+ | 0.24 EUR |
BSP60,115 |
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Hersteller: NEXPERIA
BSP60.115 PNP SMD Darlington transistors
BSP60.115 PNP SMD Darlington transistors
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
260+ | 0.27 EUR |
1000+ | 0.26 EUR |
BSP61,115 |
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Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Collector-emitter voltage: 60V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1.25W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Collector-emitter voltage: 60V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1.25W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
154+ | 0.47 EUR |
189+ | 0.38 EUR |
231+ | 0.31 EUR |
244+ | 0.29 EUR |
450+ | 0.28 EUR |
BSP62,115 |
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Hersteller: NEXPERIA
BSP62.115 PNP SMD Darlington transistors
BSP62.115 PNP SMD Darlington transistors
auf Bestellung 910 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
285+ | 0.25 EUR |
302+ | 0.24 EUR |
BSP89,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Drain-source voltage: 240V
Drain current: 0.375A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Drain-source voltage: 240V
Drain current: 0.375A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 839 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
124+ | 0.58 EUR |
154+ | 0.46 EUR |
227+ | 0.32 EUR |
239+ | 0.30 EUR |
500+ | 0.29 EUR |
BSR14,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1683 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
206+ | 0.35 EUR |
257+ | 0.28 EUR |
308+ | 0.23 EUR |
371+ | 0.19 EUR |
826+ | 0.09 EUR |
873+ | 0.08 EUR |
BSR16,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Current gain: 50...300
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Pulsed collector current: 0.8A
Current gain: 50...300
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
184+ | 0.39 EUR |
BSR19A-QR |
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Hersteller: NEXPERIA
BSR19A-QR NPN SMD transistors
BSR19A-QR NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR19A,215 |
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Hersteller: NEXPERIA
BSR19A.215 NPN SMD transistors
BSR19A.215 NPN SMD transistors
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
142+ | 0.50 EUR |
682+ | 0.10 EUR |
722+ | 0.10 EUR |
BSR33,115 |
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Hersteller: NEXPERIA
BSR33.115 PNP SMD transistors
BSR33.115 PNP SMD transistors
auf Bestellung 1640 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.82 EUR |
348+ | 0.21 EUR |
368+ | 0.19 EUR |
BSR41-QF |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR41-QX |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR41,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Frequency: 100MHz
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.35W
Polarisation: bipolar
Case: SC62; SOT89
Frequency: 100MHz
Collector-emitter voltage: 60V
Current gain: 30...300
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 716 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
131+ | 0.55 EUR |
239+ | 0.30 EUR |
253+ | 0.28 EUR |
2000+ | 0.27 EUR |
BSR43-QX |
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Hersteller: NEXPERIA
BSR43-QX NPN SMD transistors
BSR43-QX NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR43,115 |
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Hersteller: NEXPERIA
BSR43.115 NPN SMD transistors
BSR43.115 NPN SMD transistors
auf Bestellung 1321 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
108+ | 0.66 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
BSS123,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44991 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
414+ | 0.17 EUR |
662+ | 0.11 EUR |
811+ | 0.09 EUR |
1573+ | 0.05 EUR |
1667+ | 0.04 EUR |
3000+ | 0.04 EUR |
BSS138AKAR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.125A
Power dissipation: 0.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.51nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.125A
Power dissipation: 0.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.51nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1798 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
477+ | 0.15 EUR |
582+ | 0.12 EUR |
820+ | 0.09 EUR |
1378+ | 0.05 EUR |
1458+ | 0.05 EUR |
BSS138BK,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35305 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
350+ | 0.20 EUR |
457+ | 0.16 EUR |
561+ | 0.13 EUR |
686+ | 0.10 EUR |
1749+ | 0.04 EUR |
1852+ | 0.04 EUR |
BSS138BKS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.32W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.32W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 593 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
280+ | 0.26 EUR |
361+ | 0.20 EUR |
443+ | 0.16 EUR |
532+ | 0.13 EUR |
593+ | 0.12 EUR |
BSS138BKW,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3969 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
353+ | 0.20 EUR |
518+ | 0.14 EUR |
613+ | 0.12 EUR |
971+ | 0.07 EUR |
1027+ | 0.07 EUR |
1036+ | 0.07 EUR |
BSS138P,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58723 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
695+ | 0.10 EUR |
893+ | 0.08 EUR |
1007+ | 0.07 EUR |
2058+ | 0.04 EUR |
2174+ | 0.03 EUR |
3000+ | 0.03 EUR |
BSS138PS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6478 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
218+ | 0.33 EUR |
257+ | 0.28 EUR |
375+ | 0.19 EUR |
399+ | 0.18 EUR |
486+ | 0.15 EUR |
1040+ | 0.07 EUR |
BSS138PW,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17146 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
358+ | 0.20 EUR |
424+ | 0.17 EUR |
648+ | 0.11 EUR |
781+ | 0.09 EUR |
1520+ | 0.05 EUR |
1608+ | 0.04 EUR |
BSS192,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -240V
Drain current: -120mA
Power dissipation: 0.56W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 5nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -240V
Drain current: -120mA
Power dissipation: 0.56W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 5nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS63-QR |
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Hersteller: NEXPERIA
BSS63-QR PNP SMD transistors
BSS63-QR PNP SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS63,215 |
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Hersteller: NEXPERIA
BSS63.215 PNP SMD transistors
BSS63.215 PNP SMD transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
217+ | 0.33 EUR |
1374+ | 0.05 EUR |
1454+ | 0.05 EUR |
45000+ | 0.05 EUR |
BSS64,215 |
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Hersteller: NEXPERIA
BSS64.215 NPN SMD transistors
BSS64.215 NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS84,215 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19959 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
539+ | 0.13 EUR |
651+ | 0.11 EUR |
1563+ | 0.05 EUR |
1651+ | 0.04 EUR |
3000+ | 0.04 EUR |
BSS84AK,215 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.12A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.12A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12861 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
472+ | 0.15 EUR |
738+ | 0.10 EUR |
900+ | 0.08 EUR |
1946+ | 0.04 EUR |
2058+ | 0.04 EUR |
2500+ | 0.03 EUR |
BSS84AKS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -100mA
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -100mA
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2551 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
332+ | 0.22 EUR |
476+ | 0.15 EUR |
554+ | 0.13 EUR |
991+ | 0.07 EUR |
1047+ | 0.07 EUR |
BSS84AKV,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -110mA; Idm: -0.7A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Pulsed drain current: -0.7A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -110mA; Idm: -0.7A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Pulsed drain current: -0.7A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSS84AKW,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1788 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
374+ | 0.19 EUR |
443+ | 0.16 EUR |
685+ | 0.10 EUR |
828+ | 0.09 EUR |
1788+ | 0.04 EUR |