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74HCT2G125DC,125 74HCT2G125DC,125 NEXPERIA 74HCT2G125D-DTE.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Supply voltage: 2...6V DC
Manufacturer series: Mini Logic
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: VSSOP8
Family: HCT
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 2
Mounting: SMD
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BAS31.215 BAS31.215 NEXPERIA BAS31.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 110V
Load current: 0.15A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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74LVC4245ABQ-Q100J NEXPERIA 74LVC4245A_Q100.pdf Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.5...5.5V DC
Technology: CMOS
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74LVC4245ABQ,118 NEXPERIA 74LVC4245A.pdf Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.5...3.6V DC; 1.5...5.5V DC
Technology: CMOS; TTL
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74LVC2T45DC-Q100H 74LVC2T45DC-Q100H NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: VSSOP8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Technology: CMOS
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BUK7Y7R8-80EX NEXPERIA BUK7Y7R8-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 19.6mΩ
Gate-source voltage: ±20V
Drain current: 78A
Drain-source voltage: 80V
Power dissipation: 238W
Pulsed drain current: 441A
Application: automotive industry
Kind of channel: enhancement
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BZX384-B7V5,115 BZX384-B7V5,115 NEXPERIA BZX384_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX384-B7V5-QX BZX384-B7V5-QX NEXPERIA BZX384-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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74HCT4017BQ,115 NEXPERIA 74HCT4017BQ,115.pdf Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS,TTL; SMD; DHVQFN16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: HCT
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PMEG150G20ELRX PMEG150G20ELRX NEXPERIA PMEG150G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Leakage current: 30nA
Max. forward impulse current: 70A
Reverse recovery time: 14ns
Kind of package: reel; tape
Features of semiconductor devices: silicon germanium diode (SiGe)
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PMEG200G10ELRX PMEG200G10ELRX NEXPERIA PMEG200G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 34ns
Features of semiconductor devices: silicon germanium diode (SiGe)
Leakage current: 30nA
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PMEG200G20ELRX PMEG200G20ELRX NEXPERIA PMEG200G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G30ELPX PMEG200G30ELPX NEXPERIA PMEG200G30ELP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 31ns; SOD128; Ufmax: 0.81V; Ir: 30nA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD128
Max. forward voltage: 0.81V
Max. forward impulse current: 85A
Leakage current: 30nA
Kind of package: reel; tape
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NXS0108BQX NEXPERIA NXS0108.pdf Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 1.65...3.6V DC; 2.3...5.5V DC
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
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PMEG3020EH,115 PMEG3020EH,115 NEXPERIA PMEG3020EH.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Max. forward impulse current: 9A
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Capacitance: 72pF
Type of diode: Schottky rectifying
Mounting: SMD
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BAS416Z BAS416Z NEXPERIA BAS416.115.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
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BAS416F BAS416F NEXPERIA BAS416.115.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
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1N4730A,113 1N4730A,113 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: reel; tape
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1N4730A,133 1N4730A,133 NEXPERIA PHGLS20363-1.pdf?t.download=true&u=5oefqw 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: Ammo Pack
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BZV90-C27,115 BZV90-C27,115 NEXPERIA BZV90-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; SOT223; Ifmax: 400mA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 1V
Case: SOT223
Max. load current: 0.4A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZV55-B5V1,135 BZV55-B5V1,135 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
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74HC30PW,118 74HC30PW,118 NEXPERIA 74HC30PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Delay time: 195ns
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
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74HC30D,653 74HC30D,653 NEXPERIA 74HC30D,653.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
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74HC174PW,118 74HC174PW,118 NEXPERIA 74HC174PW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: CMOS
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BC857AMB,315 NEXPERIA BC857XMB_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: DFN1006B-3; SOT883B
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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BC857AW,115 BC857AW,115 NEXPERIA BC856W_BC857W_BC858W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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PMD3001D,115 PMD3001D,115 NEXPERIA PMD3001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Collector-emitter voltage: 40V
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Kind of package: reel; tape
Semiconductor structure: common base; common emitter
Case: SC74; SOT457; TSOP6
Collector current: 1A
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74AHCT32PW,118 74AHCT32PW,118 NEXPERIA 74AHCT32PW,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS; TTL
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74AHCT32D,118 74AHCT32D,118 NEXPERIA 74AHCT32D,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
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MMBZ6V8AL,215 MMBZ6V8AL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 10nA
Number of channels: 2
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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74HCT390DB,112 74HCT390DB,112 NEXPERIA 74HC_HCT390.pdf Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SSOP16; HCT; tube
Family: HCT
Kind of package: tube
Mounting: SMD
Case: SSOP16
Number of channels: 2
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Technology: CMOS; TTL
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PESD3V3L1BA,115 PESD3V3L1BA,115 NEXPERIA PESD3V3L1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 3.3V
Leakage current: 2µA
Capacitance: 101pF
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PESD3V3U1UL,315 PESD3V3U1UL,315 NEXPERIA PESD3V3U1UA_UB_UL.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
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PESD3V3U1UT,215 PESD3V3U1UT,215 NEXPERIA PESDXU1UT_SER.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
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PESD3V3U1UB,115 PESD3V3U1UB,115 NEXPERIA PESD3V3U1UA_UB_UL.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.6V; unidirectional; SOD523; 3.1pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 3.1pF
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PESD3V3V1BLYL PESD3V3V1BLYL NEXPERIA PESD3V3V1BL.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
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PESD3V3X1BCSFYL PESD3V3X1BCSFYL NEXPERIA PESD3V3X1BCSF.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
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PESD3V3Z1BCSFYL PESD3V3Z1BCSFYL NEXPERIA PESD3V3Z1BCSF.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
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PESD3V3L2UM,315 NEXPERIA Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Peak pulse power dissipation: 30W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT883
Max. off-state voltage: 3.3V
Leakage current: 0.3µA
Produkt ist nicht verfügbar
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PESD3V3S2UAT,215 PESD3V3S2UAT,215 NEXPERIA PESD3V3S2UAT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 330W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.2...6V
Max. forward impulse current: 18A
Semiconductor structure: common cathode
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Application: automotive industry
Capacitance: 0.3nF
Number of channels: 2
Produkt ist nicht verfügbar
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PESD3V3L4UF,115 NEXPERIA PESDXL4UF_G_W.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Peak pulse power dissipation: 30W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT886
Max. off-state voltage: 3.3V
Leakage current: 0.3µA
Produkt ist nicht verfügbar
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PESD3V3S5UD,115 PESD3V3S5UD,115 NEXPERIA PESDXS5UD_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3÷5.9V; 20A; 200W; common anode; ESD; Ch: 5
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...5.9V
Max. forward impulse current: 20A
Semiconductor structure: common anode
Case: SC74; SOT457
Mounting: SMD
Leakage current: 0.8µA
Application: automotive industry
Capacitance: 0.3nF
Number of channels: 5
Produkt ist nicht verfügbar
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PESD3V3S2UQ,115 NEXPERIA PESDXS2UQ_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; ESD; SOT663; Ch: 2
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.2...6V
Max. forward impulse current: 15A
Semiconductor structure: common anode
Case: SOT663
Mounting: SMD
Leakage current: 3µA
Application: universal
Capacitance: 275pF
Number of channels: 2
Produkt ist nicht verfügbar
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PESD3V3L1BAF PESD3V3L1BAF NEXPERIA PESD3V3L1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 3.3V
Leakage current: 2µA
Produkt ist nicht verfügbar
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PESD3V3X1BL,315 PESD3V3X1BL,315 NEXPERIA PESD3V3X1BL.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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74LV245DB,118 74LV245DB,118 NEXPERIA 74LV245.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; TTL; SMD; SSOP20; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Mounting: SMD
Case: SSOP20
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Technology: TTL
Kind of package: reel; tape
Family: LV
Number of channels: 8
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74LVC04AD,118 74LVC04AD,118 NEXPERIA 74LVC04AD,118.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of gate: NOT
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74AUP1G14GX4-Q100Z 74AUP1G14GX4-Q100Z NEXPERIA 74AUP1G14_Q100.pdf Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; X2SON4; -40÷125°C
Case: X2SON4
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
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74LVC2G06GS,132 NEXPERIA 74LVC2G06.pdf Category: Gates, inverters
Description: IC: digital; inverter; CMOS; SMD; XSON6; Mini Logic; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Technology: CMOS
Mounting: SMD
Case: XSON6
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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BSR19A-QR BSR19A-QR NEXPERIA BSR19A-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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PMBT2369,215 PMBT2369,215 NEXPERIA PMBT2369.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 500MHz
Produkt ist nicht verfügbar
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74AHCT595BQ,115 NEXPERIA 74AHCT595BQ,115.pdf Category: Shift registers
Description: IC: digital; CMOS; SMD; DHVQFN16; AHCT; -40÷125°C; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel/serial out; serial input; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: DHVQFN16
Family: AHCT
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Produkt ist nicht verfügbar
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BC868-25-QX BC868-25-QX NEXPERIA BC868-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 160...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAS16H-QX BAS16H-QX NEXPERIA BAS16H-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HC165D.653 74HC165D.653 NEXPERIA 74HC165D.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74HC05BQ,115 NEXPERIA 74HC05BQ,115.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; DHVQFN14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of output: open drain
Supply voltage: 2...6V DC
Kind of gate: NOT
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: DHVQFN14
Family: HC
Number of channels: hex; 6
Mounting: SMD
Delay time: 135ns
Produkt ist nicht verfügbar
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PBSS5360ZX PBSS5360ZX NEXPERIA PBSS5360Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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PBSS5360PASX PBSS5360PASX NEXPERIA PBSS5360PAS.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; DFN2020D-3,SOT1061D
Case: DFN2020D-3; SOT1061D
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: PNP
Frequency: 120MHz
Collector current: 3A
Produkt ist nicht verfügbar
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BAT760,115 BAT760,115 NEXPERIA BAT760.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC858B,215 BC858B,215 NEXPERIA BC856_BC857_BC858.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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74HCT2G125DC,125 74HCT2G125D-DTE.PDF
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Supply voltage: 2...6V DC
Manufacturer series: Mini Logic
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: VSSOP8
Family: HCT
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 2
Mounting: SMD
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BAS31.215 BAS31.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 110V
Load current: 0.15A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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74LVC4245ABQ-Q100J 74LVC4245A_Q100.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.5...5.5V DC
Technology: CMOS
Produkt ist nicht verfügbar
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74LVC4245ABQ,118 74LVC4245A.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Supply voltage: 1.5...3.6V DC; 1.5...5.5V DC
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74LVC2T45DC-Q100H 74LVC_LVCH2T45_Q100.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: VSSOP8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Technology: CMOS
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BUK7Y7R8-80EX BUK7Y7R8-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 19.6mΩ
Gate-source voltage: ±20V
Drain current: 78A
Drain-source voltage: 80V
Power dissipation: 238W
Pulsed drain current: 441A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX384-B7V5,115 BZX384_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX384-B7V5-QX BZX384-Q_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; SOD323; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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74HCT4017BQ,115 74HCT4017BQ,115.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS,TTL; SMD; DHVQFN16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: HCT
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PMEG150G20ELRX PMEG150G20ELR.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Leakage current: 30nA
Max. forward impulse current: 70A
Reverse recovery time: 14ns
Kind of package: reel; tape
Features of semiconductor devices: silicon germanium diode (SiGe)
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PMEG200G10ELRX PMEG200G10ELR.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 34ns
Features of semiconductor devices: silicon germanium diode (SiGe)
Leakage current: 30nA
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PMEG200G20ELRX PMEG200G20ELR.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G30ELPX PMEG200G30ELP.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 31ns; SOD128; Ufmax: 0.81V; Ir: 30nA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD128
Max. forward voltage: 0.81V
Max. forward impulse current: 85A
Leakage current: 30nA
Kind of package: reel; tape
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NXS0108BQX NXS0108.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 1.65...3.6V DC; 2.3...5.5V DC
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Produkt ist nicht verfügbar
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PMEG3020EH,115 PMEG3020EH.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Max. forward impulse current: 9A
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Capacitance: 72pF
Type of diode: Schottky rectifying
Mounting: SMD
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BAS416Z BAS416.115.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
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BAS416F BAS416.115.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4730A,113 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4730A,133 PHGLS20363-1.pdf?t.download=true&u=5oefqw 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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BZV90-C27,115 BZV90-DTE.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; SOT223; Ifmax: 400mA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 1V
Case: SOT223
Max. load current: 0.4A
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 374 Stücke:
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BZV55-B5V1,135 BZV55_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74HC30PW,118 74HC30PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Delay time: 195ns
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
auf Bestellung 5000 Stücke:
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74HC30D,653 74HC30D,653.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
auf Bestellung 7 Stücke:
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74HC174PW,118 74HC174PW,118.pdf
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BC857AMB,315 BC857XMB_SER.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: DFN1006B-3; SOT883B
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC857AW,115 BC856W_BC857W_BC858W.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMD3001D,115 PMD3001D.pdf
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Collector-emitter voltage: 40V
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: NPN / PNP
Kind of package: reel; tape
Semiconductor structure: common base; common emitter
Case: SC74; SOT457; TSOP6
Collector current: 1A
Produkt ist nicht verfügbar
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74AHCT32PW,118 74AHCT32PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: AHCT
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS; TTL
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
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74AHCT32D,118 74AHCT32D,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
auf Bestellung 756 Stücke:
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MMBZ6V8AL,215 MMBZxAL_SER.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 10nA
Number of channels: 2
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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74HCT390DB,112 74HC_HCT390.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SSOP16; HCT; tube
Family: HCT
Kind of package: tube
Mounting: SMD
Case: SSOP16
Number of channels: 2
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Technology: CMOS; TTL
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
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PESD3V3L1BA,115 PESD3V3L1BA.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 3.3V
Leakage current: 2µA
Capacitance: 101pF
Produkt ist nicht verfügbar
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PESD3V3U1UL,315 PESD3V3U1UA_UB_UL.pdf
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
auf Bestellung 10000 Stücke:
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PESD3V3U1UT,215 PESDXU1UT_SER.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
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PESD3V3U1UB,115 PESD3V3U1UA_UB_UL.pdf
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.6V; unidirectional; SOD523; 3.1pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 3.1pF
Produkt ist nicht verfügbar
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PESD3V3V1BLYL PESD3V3V1BL.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Produkt ist nicht verfügbar
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PESD3V3X1BCSFYL PESD3V3X1BCSF.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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PESD3V3Z1BCSFYL PESD3V3Z1BCSF.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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PESD3V3L2UM,315
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Peak pulse power dissipation: 30W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT883
Max. off-state voltage: 3.3V
Leakage current: 0.3µA
Produkt ist nicht verfügbar
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PESD3V3S2UAT,215 PESD3V3S2UAT.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 330W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.2...6V
Max. forward impulse current: 18A
Semiconductor structure: common cathode
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Application: automotive industry
Capacitance: 0.3nF
Number of channels: 2
Produkt ist nicht verfügbar
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PESD3V3L4UF,115 PESDXL4UF_G_W.pdf
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Peak pulse power dissipation: 30W
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT886
Max. off-state voltage: 3.3V
Leakage current: 0.3µA
Produkt ist nicht verfügbar
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PESD3V3S5UD,115 PESDXS5UD_SER.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3÷5.9V; 20A; 200W; common anode; ESD; Ch: 5
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...5.9V
Max. forward impulse current: 20A
Semiconductor structure: common anode
Case: SC74; SOT457
Mounting: SMD
Leakage current: 0.8µA
Application: automotive industry
Capacitance: 0.3nF
Number of channels: 5
Produkt ist nicht verfügbar
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PESD3V3S2UQ,115 PESDXS2UQ_SER.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; ESD; SOT663; Ch: 2
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.15kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.2...6V
Max. forward impulse current: 15A
Semiconductor structure: common anode
Case: SOT663
Mounting: SMD
Leakage current: 3µA
Application: universal
Capacitance: 275pF
Number of channels: 2
Produkt ist nicht verfügbar
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PESD3V3L1BAF PESD3V3L1BA.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 3.3V
Leakage current: 2µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PESD3V3X1BL,315 PESD3V3X1BL.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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74LV245DB,118 74LV245.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; TTL; SMD; SSOP20; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Mounting: SMD
Case: SSOP20
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Technology: TTL
Kind of package: reel; tape
Family: LV
Number of channels: 8
auf Bestellung 758 Stücke:
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74LVC04AD,118 74LVC04AD,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of gate: NOT
auf Bestellung 51 Stücke:
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74AUP1G14GX4-Q100Z 74AUP1G14_Q100.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; X2SON4; -40÷125°C
Case: X2SON4
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 3 Stücke:
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74LVC2G06GS,132 74LVC2G06.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; CMOS; SMD; XSON6; Mini Logic; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Technology: CMOS
Mounting: SMD
Case: XSON6
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSR19A-QR BSR19A-Q.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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PMBT2369,215 PMBT2369.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 500MHz
Produkt ist nicht verfügbar
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74AHCT595BQ,115 74AHCT595BQ,115.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; CMOS; SMD; DHVQFN16; AHCT; -40÷125°C; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel/serial out; serial input; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: DHVQFN16
Family: AHCT
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BC868-25-QX BC868-Q_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 160...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAS16H-QX BAS16H-Q.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HC165D.653 74HC165D.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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74HC05BQ,115 74HC05BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; DHVQFN14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of output: open drain
Supply voltage: 2...6V DC
Kind of gate: NOT
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: DHVQFN14
Family: HC
Number of channels: hex; 6
Mounting: SMD
Delay time: 135ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PBSS5360ZX PBSS5360Z.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
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PBSS5360PASX PBSS5360PAS.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; DFN2020D-3,SOT1061D
Case: DFN2020D-3; SOT1061D
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: PNP
Frequency: 120MHz
Collector current: 3A
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BAT760,115 BAT760.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 5A
Kind of package: reel; tape
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BC858B,215 BC856_BC857_BC858.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 7 inch reel; tape
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