Foto | Bezeichnung | Hersteller | Beschreibung |
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74ALVC373D,118 | NEXPERIA |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 1.65...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: ALVC Technology: CMOS; TTL Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74ALVC373PW,118 | NEXPERIA |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; ALVC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 1.65...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: ALVC Technology: CMOS; TTL Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BAV20,113 | NEXPERIA |
![]() Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel Max. forward impulse current: 9A Case: SOD27 Max. forward voltage: 1.25V Reverse recovery time: 50ns Power dissipation: 0.4W Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
I74F04D602 | NEXPERIA |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9616-75B,118 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W Application: automotive industry Power dissipation: 157W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±15V Pulsed drain current: 270A Mounting: SMD Case: D2PAK; SOT404 Drain-source voltage: 75V Drain current: 47A On-state resistance: 34mΩ Type of transistor: N-MOSFET |
auf Bestellung 786 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C11,215 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT160S-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Load current: 1A Case: SOT223 Mounting: SMD Semiconductor structure: double series Max. forward voltage: 0.65V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PSMN1R1-30PL,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W Drain-source voltage: 30V Drain current: 120A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 338W Polarisation: unipolar Kind of package: tube Gate charge: 243nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1609A Mounting: THT Case: SOT78; TO220AB |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG150G20ELRX | NEXPERIA |
![]() Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Mounting: SMD Case: SOD123W Max. off-state voltage: 150V Max. forward voltage: 0.78V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 14ns Max. forward impulse current: 70A Leakage current: 30nA |
auf Bestellung 1231 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG120G10ELRX | NEXPERIA |
![]() Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Mounting: SMD Case: SOD123W Max. off-state voltage: 120V Max. forward voltage: 0.77V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 12ns Max. forward impulse current: 50A Leakage current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PMEG150G10ELRX | NEXPERIA |
![]() Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Mounting: SMD Case: SOD123W Max. off-state voltage: 150V Max. forward voltage: 0.78V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 15ns Max. forward impulse current: 50A Leakage current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PMEG120G20ELRX | NEXPERIA |
![]() Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Mounting: SMD Case: SOD123W Max. off-state voltage: 120V Max. forward voltage: 0.77V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 11ns Max. forward impulse current: 70A Leakage current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PZU5.6B2L,315 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1.1V Case: DFN1006-2; SOD882 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 7910 Stücke: Lieferzeit 14-21 Tag (e) |
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NUP1301,215 | NEXPERIA |
![]() Description: Diode: TVS; 220W; 4A; unidirectional; SOT23 Type of diode: TVS Peak pulse power dissipation: 220W Max. off-state voltage: 80V Max. forward impulse current: 4A Semiconductor structure: unidirectional Case: SOT23 Mounting: SMD Leakage current: 0.1µA |
auf Bestellung 747 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G14GM,115 | NEXPERIA |
![]() Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Kind of input: with Schmitt trigger Family: LVC Manufacturer series: Mini Logic Delay time: 14ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G14GN,132 | NEXPERIA |
![]() Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Manufacturer series: Mini Logic Kind of integrated circuit: inverter; Schmitt trigger Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G14GS,132 | NEXPERIA |
![]() Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Kind of input: with Schmitt trigger Family: LVC Manufacturer series: Mini Logic Delay time: 14ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G14GX4-Q100Z | NEXPERIA |
![]() Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2SON4 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Kind of integrated circuit: inverter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G14GX4Z | NEXPERIA |
![]() Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: X2SON4 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Quiescent current: 4µA Kind of input: with Schmitt trigger Family: LVC Delay time: 14ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBZ9V1AL,215 | NEXPERIA |
![]() Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode Case: SOT23 Max. off-state voltage: 6V Semiconductor structure: common anode; double; unidirectional Breakdown voltage: 9.1V Leakage current: 0.1µA Type of diode: TVS array Version: ESD Peak pulse power dissipation: 40W Mounting: SMD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7M33-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W Application: automotive industry Power dissipation: 44W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.9nC Kind of channel: enhancement Pulsed drain current: 98A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 17A On-state resistance: 74mΩ Type of transistor: N-MOSFET |
auf Bestellung 6624 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7M6R3-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W Application: automotive industry Power dissipation: 79W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.1nC Kind of channel: enhancement Pulsed drain current: 319A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 40V Drain current: 56.4A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET |
auf Bestellung 1491 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK765R0-100E,118 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404 Application: automotive industry Power dissipation: 349W Polarisation: unipolar Kind of package: reel; tape Gate charge: 180nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: D2PAK; SOT404 Drain-source voltage: 100V Drain current: 115A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUK763R8-80E,118 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W Application: automotive industry Power dissipation: 349W Polarisation: unipolar Kind of package: reel; tape Gate charge: 169nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 778A Mounting: SMD Case: D2PAK; SOT404 Drain-source voltage: 80V Drain current: 120A On-state resistance: 9.2mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BUK7K52-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W Application: automotive industry Power dissipation: 32W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 71A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 12.6A On-state resistance: 101mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7K134-100EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W Application: automotive industry Power dissipation: 32W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 39A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 6.9A On-state resistance: 335mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BUK7Y7R0-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Application: automotive industry Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 272A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 40V Drain current: 48A On-state resistance: 13.6mΩ Type of transistor: N-MOSFET |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7K15-80EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W Application: automotive industry Power dissipation: 68W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35.1nC Kind of channel: enhancement Pulsed drain current: 92A Mounting: SMD Case: LFPAK56D; SOT1205 Drain-source voltage: 80V Drain current: 16A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7K23-80EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 68A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 80V Drain current: 12A On-state resistance: 58mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7K32-100EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W Application: automotive industry Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 116A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 20.4A On-state resistance: 76mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7D25-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Application: automotive industry Power dissipation: 15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Technology: Trench Kind of channel: enhancement Pulsed drain current: 76A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 40V Drain current: 12A On-state resistance: 46mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7J1R4-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Application: automotive industry Power dissipation: 395W Polarisation: unipolar Kind of package: reel; tape Gate charge: 103nC Technology: Trench Kind of channel: enhancement Pulsed drain current: 600A Mounting: SMD Case: LFPAK56E; PowerSO8; SOT1023 Drain-source voltage: 40V Drain current: 190A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7Y08-40B,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 332A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 40V Drain current: 58.85A On-state resistance: 8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7880-55A/CUX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223 Application: automotive industry Power dissipation: 8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: SC73; SOT223 Drain-source voltage: 55V Drain current: 5A On-state resistance: 148mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7D36-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W Application: automotive industry Power dissipation: 15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Mounting: SMD Case: DFN6; SOT1220 Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 76mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7K8R7-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 22.5A Mounting: SMD Case: LFPAK56D; SOT1205 Drain-source voltage: 40V Drain current: 30A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK753R1-40E,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Application: automotive industry Power dissipation: 234W Polarisation: unipolar Kind of package: tube Gate charge: 79nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 798A Mounting: THT Case: SOT78; TO220AB Drain-source voltage: 40V Drain current: 100A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK766R0-60E,118 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W Application: automotive industry Power dissipation: 182W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 473A Mounting: SMD Case: D2PAK; SOT404 Drain-source voltage: 60V Drain current: 75A On-state resistance: 13mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK7E3R5-60E,127 | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Application: automotive industry Power dissipation: 293W Polarisation: unipolar Kind of package: tube Gate charge: 114nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 785A Mounting: THT Case: I2PAK; SOT226 Drain-source voltage: 60V Drain current: 120A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BCP56-10,135 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.35W Case: SC73; SOT223 Current gain: 63...100 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Pulsed collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AHCT164D,118 | NEXPERIA |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Operating temperature: -40...125°C Case: SO14 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 8bit; parallel out; serial input; shift register Family: AHCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
74LVC1G00GM,115 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Manufacturer series: Mini Logic Delay time: 10.5ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G00GM,132 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Manufacturer series: Mini Logic Delay time: 10.5ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G00GN,132 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC1G00GS,132 | NEXPERIA |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Manufacturer series: Mini Logic Delay time: 10.5ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS70L,315 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 70V; 70mA Type of diode: Schottky rectifying Case: DFN1006-2; SOD882 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Leakage current: 10µA Kind of package: reel; tape Max. forward impulse current: 0.1A Capacitance: 2pF |
auf Bestellung 6800 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT240BQ,115 | NEXPERIA |
![]() Description: IC: digital; 3-state,8bit,buffer,octal,inverting,line driver Type of integrated circuit: digital Operating temperature: -40...125°C Case: DHVQFN20 Number of inputs: 5 Supply voltage: 4.5...5.5V DC Number of channels: 2 Kind of output: 3-state Kind of package: reel; tape Technology: TTL Kind of integrated circuit: 3-state; 8bit; buffer; inverting; line driver; octal Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS16W.115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 175mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS16WF | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 175mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74HCT2G32DC,125 | NEXPERIA |
![]() Description: IC: digital; OR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: VSSOP8 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT Manufacturer series: Mini Logic |
auf Bestellung 2820 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT32DB,112 | NEXPERIA |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube Type of integrated circuit: digital Operating temperature: -40...125°C Case: SSOP14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC Number of channels: quad; 4 Kind of package: tube Kind of gate: OR Technology: CMOS; TTL Family: HCT Mounting: SMD |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52H-C5V1,115 | NEXPERIA |
![]() Description: Diode: Zener; 0.375/0.83W; 5.1V; SMD; reel,tape; SOD123F Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD123F Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 1828 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC173PW,112 | NEXPERIA |
![]() Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; TSSOP16; tube; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Mounting: SMD Case: TSSOP16 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: tube Family: HC Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS |
auf Bestellung 1319 Stücke: Lieferzeit 14-21 Tag (e) |
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74AUP3G3404GSX | NEXPERIA |
![]() Description: IC: digital; buffer,inverter; NOT; CMOS; SMD; XSON8; Mini Logic Mounting: SMD Case: XSON8 Type of integrated circuit: digital Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: Mini Logic Kind of gate: NOT Kind of integrated circuit: buffer; inverter Family: AUP Technology: CMOS Operating temperature: -40...125°C Supply voltage: 0.8...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NUP1301U,115 | NEXPERIA |
![]() Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323; ESD Type of diode: TVS Max. off-state voltage: 80V Semiconductor structure: unidirectional Case: SC70; SOT323 Mounting: SMD Leakage current: 0.1µA Version: ESD Max. forward impulse current: 4A Peak pulse power dissipation: 220W |
auf Bestellung 3025 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-80YSEX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Case: LFPAK56E; PowerSO8; SOT1023 Drain-source voltage: 80V Drain current: 123A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Power dissipation: 294W Polarisation: unipolar Kind of package: reel; tape Gate charge: 110nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 698A Mounting: SMD |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG6010CEH-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PMEG6010CEJ-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PMEG6010CEJF | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 10A Kind of package: reel; tape Leakage current: 50µA Capacitance: 68pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74HC377D,653 | NEXPERIA |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; reel,tape; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HC Trigger: positive-edge-triggered Technology: CMOS |
auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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74ALVC373D,118 |
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Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74ALVC373PW,118 |
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Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; ALVC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; ALVC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV20,113 |
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Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
I74F04D602 |
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.09 EUR |
500+ | 0.94 EUR |
BUK9616-75B,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
44+ | 1.64 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
BZX84-C11,215 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
807+ | 0.09 EUR |
1169+ | 0.06 EUR |
1389+ | 0.05 EUR |
1709+ | 0.04 EUR |
BAT160S-QX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Case: SOT223
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 0.65V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Case: SOT223
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 0.65V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PSMN1R1-30PL,127 |
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Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.61 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
PMEG150G20ELRX |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
Max. forward impulse current: 70A
Leakage current: 30nA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
Max. forward impulse current: 70A
Leakage current: 30nA
auf Bestellung 1231 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
215+ | 0.33 EUR |
311+ | 0.23 EUR |
397+ | 0.18 EUR |
420+ | 0.17 EUR |
PMEG120G10ELRX |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 30nA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG150G10ELRX |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 50A
Leakage current: 30nA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG120G20ELRX |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 70A
Leakage current: 30nA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 70A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZU5.6B2L,315 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 7910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
472+ | 0.15 EUR |
697+ | 0.10 EUR |
824+ | 0.09 EUR |
1273+ | 0.06 EUR |
1345+ | 0.05 EUR |
5000+ | 0.05 EUR |
NUP1301,215 |
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Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
515+ | 0.14 EUR |
569+ | 0.13 EUR |
612+ | 0.12 EUR |
747+ | 0.10 EUR |
74LVC1G14GM,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC1G14GN,132 |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
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74LVC1G14GS,132 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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74LVC1G14GX4-Q100Z |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
Im Einkaufswagen
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74LVC1G14GX4Z |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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MMBZ9V1AL,215 |
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Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
264+ | 0.27 EUR |
336+ | 0.21 EUR |
674+ | 0.11 EUR |
808+ | 0.09 EUR |
1250+ | 0.06 EUR |
1345+ | 0.05 EUR |
BUK7M33-60EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
auf Bestellung 6624 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
96+ | 0.75 EUR |
160+ | 0.45 EUR |
169+ | 0.42 EUR |
500+ | 0.41 EUR |
BUK7M6R3-40EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
72+ | 0.99 EUR |
97+ | 0.74 EUR |
102+ | 0.70 EUR |
200+ | 0.67 EUR |
BUK765R0-100E,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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BUK763R8-80E,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7K52-60EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7K134-100EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7Y7R0-40HX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
74+ | 0.98 EUR |
94+ | 0.77 EUR |
99+ | 0.73 EUR |
500+ | 0.72 EUR |
BUK7K15-80EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7K23-80EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7K32-100EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7D25-40EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7J1R4-40HX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7Y08-40B,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7880-55A/CUX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7D36-60EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7K8R7-40EX |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK753R1-40E,127 |
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Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK766R0-60E,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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BUK7E3R5-60E,127 |
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Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCP56-10,135 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
Produkt ist nicht verfügbar
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74AHCT164D,118 |
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Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
Produkt ist nicht verfügbar
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74LVC1G00GM,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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74LVC1G00GM,132 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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74LVC1G00GN,132 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
Im Einkaufswagen
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74LVC1G00GS,132 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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BAS70L,315 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 70V; 70mA
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Capacitance: 2pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 70V; 70mA
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Capacitance: 2pF
auf Bestellung 6800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
521+ | 0.14 EUR |
727+ | 0.10 EUR |
861+ | 0.08 EUR |
1378+ | 0.05 EUR |
1458+ | 0.05 EUR |
1511+ | 0.05 EUR |
74HCT240BQ,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,8bit,buffer,octal,inverting,line driver
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: 3-state; 8bit; buffer; inverting; line driver; octal
Family: HCT
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; 3-state,8bit,buffer,octal,inverting,line driver
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: 3-state; 8bit; buffer; inverting; line driver; octal
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
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BAS16W.115 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16WF |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
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74HCT2G32DC,125 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
538+ | 0.13 EUR |
74HCT32DB,112 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Kind of package: tube
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Kind of package: tube
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Mounting: SMD
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.20 EUR |
397+ | 0.19 EUR |
BZT52H-C5V1,115 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.1V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.1V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
782+ | 0.09 EUR |
1132+ | 0.06 EUR |
1309+ | 0.06 EUR |
1828+ | 0.04 EUR |
74HC173PW,112 |
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Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; TSSOP16; tube; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; TSSOP16; tube; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
auf Bestellung 1319 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
233+ | 0.31 EUR |
254+ | 0.28 EUR |
290+ | 0.25 EUR |
307+ | 0.23 EUR |
74AUP3G3404GSX |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; NOT; CMOS; SMD; XSON8; Mini Logic
Mounting: SMD
Case: XSON8
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NOT
Kind of integrated circuit: buffer; inverter
Family: AUP
Technology: CMOS
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; NOT; CMOS; SMD; XSON8; Mini Logic
Mounting: SMD
Case: XSON8
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NOT
Kind of integrated circuit: buffer; inverter
Family: AUP
Technology: CMOS
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NUP1301U,115 |
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Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323; ESD
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323; ESD
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
424+ | 0.17 EUR |
499+ | 0.14 EUR |
634+ | 0.11 EUR |
867+ | 0.08 EUR |
916+ | 0.08 EUR |
PSMN4R2-80YSEX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 80V
Drain current: 123A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 698A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 80V
Drain current: 123A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 698A
Mounting: SMD
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.45 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
500+ | 1.77 EUR |
PMEG6010CEH-QX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG6010CEJ-QX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG6010CEJF |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 68pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 68pF
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74HC377D,653 |
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Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; reel,tape; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Trigger: positive-edge-triggered
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; reel,tape; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Trigger: positive-edge-triggered
Technology: CMOS
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
76+ | 0.94 EUR |
87+ | 0.83 EUR |
106+ | 0.68 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |