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74ALVC373D,118 NEXPERIA 74ALVC373.pdf Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Produkt ist nicht verfügbar
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74ALVC373PW,118 NEXPERIA 74ALVC373.pdf Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; ALVC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
Produkt ist nicht verfügbar
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BAV20,113 NEXPERIA BAV20.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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I74F04D602 NEXPERIA Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.09 EUR
500+0.94 EUR
Mindestbestellmenge: 100
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BUK9616-75B,118 BUK9616-75B,118 NEXPERIA BUK9616-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
44+1.64 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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BZX84-C11,215 BZX84-C11,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
807+0.09 EUR
1169+0.06 EUR
1389+0.05 EUR
1709+0.04 EUR
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BAT160S-QX NEXPERIA BAT160S-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Case: SOT223
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 0.65V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
auf Bestellung 38 Stücke:
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13+5.61 EUR
18+4.19 EUR
19+3.96 EUR
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PMEG150G20ELRX PMEG150G20ELRX NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC5F444F15A0C7&compId=PMEG150G20ELR.pdf?ci_sign=19857758531d55dce69ebd727a5dc80211184075 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
Max. forward impulse current: 70A
Leakage current: 30nA
auf Bestellung 1231 Stücke:
Lieferzeit 14-21 Tag (e)
215+0.33 EUR
311+0.23 EUR
397+0.18 EUR
420+0.17 EUR
Mindestbestellmenge: 215
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PMEG120G10ELRX PMEG120G10ELRX NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC0E25761020C7&compId=PMEG120G10ELR.pdf?ci_sign=1933a80a3566aaaeb4742289676fb4ae79959e32 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
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PMEG150G10ELRX PMEG150G10ELRX NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC1F4E42CFC0C7&compId=PMEG150G10ELR.pdf?ci_sign=21f97ff5fd1e3b66e6f6870ccf29fdfb3471eae2 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
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PMEG120G20ELRX PMEG120G20ELRX NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC16551F4FC0C7&compId=PMEG120G20ELR.pdf?ci_sign=b29d52444ff8a322003bd0778bc00d277d0c84a6 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 70A
Leakage current: 30nA
Produkt ist nicht verfügbar
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PZU5.6B2L,315 PZU5.6B2L,315 NEXPERIA PZUXBL_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 7910 Stücke:
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334+0.21 EUR
472+0.15 EUR
697+0.10 EUR
824+0.09 EUR
1273+0.06 EUR
1345+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 334
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NUP1301,215 NUP1301,215 NEXPERIA NUP1301.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
515+0.14 EUR
569+0.13 EUR
612+0.12 EUR
747+0.10 EUR
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74LVC1G14GM,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BB19AA1A00D5&compId=74LVC1G14GM%2C115.pdf?ci_sign=33e28eaafe5e76b0146ee3bc4d11a05c55d8471a Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
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74LVC1G14GN,132 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BABF965440D5&compId=74LVC1G14GN%2C132.pdf?ci_sign=1000de8f0ae7c14c76bec42c1851d68669d5fbfa Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
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74LVC1G14GS,132 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BABF965580D5&compId=74LVC1G14GS%2C132.pdf?ci_sign=3ef6b7ac5e6b39fa42de1e37ae9a32b85152d895 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
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74LVC1G14GX4-Q100Z NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEABC14E788B3C60D6&compId=74LVC1G14_Q100.pdf?ci_sign=7b7214f3680c8723510d4c6be0c13917536a164a Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
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74LVC1G14GX4Z NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BB0D045960D5&compId=74LVC1G14GX4Z.pdf?ci_sign=1bbc97767a208b4d5ed14fae6fa6f147b59f6a12 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
Produkt ist nicht verfügbar
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MMBZ9V1AL,215
+1
 		MMBZ9V1AL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
264+0.27 EUR
336+0.21 EUR
674+0.11 EUR
808+0.09 EUR
1250+0.06 EUR
1345+0.05 EUR
Mindestbestellmenge: 179
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BUK7M33-60EX BUK7M33-60EX NEXPERIA BUK7M33-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
auf Bestellung 6624 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
96+0.75 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 73
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BUK7M6R3-40EX BUK7M6R3-40EX NEXPERIA BUK7M6R3-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
72+0.99 EUR
97+0.74 EUR
102+0.70 EUR
200+0.67 EUR
Mindestbestellmenge: 57
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BUK765R0-100E,118 BUK765R0-100E,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3B2B6F3051BF&compId=BUK765R0-100E.118-DTE.PDF?ci_sign=8841be159cbf7b5deb23a152b4737d8f9ba17627 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK763R8-80E,118 BUK763R8-80E,118 NEXPERIA BUK763R8-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7K52-60EX NEXPERIA BUK7K52-60E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK7K134-100EX NEXPERIA BUK7K134-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK7Y7R0-40HX BUK7Y7R0-40HX NEXPERIA BUK7Y7R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
74+0.98 EUR
94+0.77 EUR
99+0.73 EUR
500+0.72 EUR
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BUK7K15-80EX NEXPERIA BUK7K15-80E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK7K23-80EX NEXPERIA BUK7K23-80E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK7K32-100EX NEXPERIA BUK7K32-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK7D25-40EX NEXPERIA BUK7D25-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7J1R4-40HX NEXPERIA BUK7J1R4-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7Y08-40B,115 NEXPERIA BUK7Y08-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7880-55A/CUX NEXPERIA BUK7880-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7D36-60EX NEXPERIA BUK7D36-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7K8R7-40EX NEXPERIA BUK7K8R7-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK753R1-40E,127 NEXPERIA BUK753R1-40E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK766R0-60E,118 NEXPERIA BUK766R0-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7E3R5-60E,127 NEXPERIA BUK7E3R5-60E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCP56-10,135 BCP56-10,135 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A49866ABDA1E15EA&compId=BCP56-10.115.pdf?ci_sign=e2dd66796bea015c4e26474d3eed0344b935fa85 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
Produkt ist nicht verfügbar
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74AHCT164D,118 74AHCT164D,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4A99DD315E0D5&compId=74AHCT164D%2C118.pdf?ci_sign=f744ea9d30a0d27262220a71459903f3cf24ae7f Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
Produkt ist nicht verfügbar
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74LVC1G00GM,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA7E8E6380D5&compId=74LVC1G00GM%2C115.pdf?ci_sign=fe5ee9e839eb7ed5dc163a050919f6376c484eab Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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74LVC1G00GM,132 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A942060D5&compId=74LVC1G00GM%2C132.pdf?ci_sign=31e0ab67a868b75e2ed51f9a42ca29d13f0b1b7e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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74LVC1G00GN,132 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A9421A0D5&compId=74LVC1G00GN%2C132.pdf?ci_sign=4347b45638c43e7a9279c9f82456507075caf4d9 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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74LVC1G00GS,132 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A9422E0D5&compId=74LVC1G00GS%2C132.pdf?ci_sign=da56b3827720b4418f2e519431bfe67de73108d7 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
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BAS70L,315 BAS70L,315 NEXPERIA BAS70L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 70V; 70mA
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Capacitance: 2pF
auf Bestellung 6800 Stücke:
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521+0.14 EUR
727+0.10 EUR
861+0.08 EUR
1378+0.05 EUR
1458+0.05 EUR
1511+0.05 EUR
Mindestbestellmenge: 417
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74HCT240BQ,115 NEXPERIA 74HC_HCT240.pdf Category: Gates, inverters
Description: IC: digital; 3-state,8bit,buffer,octal,inverting,line driver
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: 3-state; 8bit; buffer; inverting; line driver; octal
Family: HCT
Mounting: SMD
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BAS16W.115 BAS16W.115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9F60BBB7D09E28&compId=BAS16_SER.pdf?ci_sign=a94ce18b5c693f3c795ecbf6a0c4299e1741bff8 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS16WF BAS16WF NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9F60BBB7D09E28&compId=BAS16_SER.pdf?ci_sign=a94ce18b5c693f3c795ecbf6a0c4299e1741bff8 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT2G32DC,125 74HCT2G32DC,125 NEXPERIA 74HCT2G32D-DTE.PDF Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
auf Bestellung 2820 Stücke:
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500+0.14 EUR
538+0.13 EUR
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74HCT32DB,112 74HCT32DB,112 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5BAA6FCCE05AA17&compId=74HC_HCT32.pdf?ci_sign=565f71577e345574605d070c021bff049056625c Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Kind of package: tube
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Mounting: SMD
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BZT52H-C5V1,115 BZT52H-C5V1,115 NEXPERIA BZT52H-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.1V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
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556+0.13 EUR
782+0.09 EUR
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1309+0.06 EUR
1828+0.04 EUR
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74HC173PW,112 74HC173PW,112 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B7CD7984BC770A18&compId=74HC_HCT173.pdf?ci_sign=9accb626a29a94aac98e34959dc43987f70cc6e7 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; TSSOP16; tube; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
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74AUP3G3404GSX NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEABC14C2BC75CA0D6&compId=74AUP3G3404.pdf?ci_sign=9f486dd26f574402f09284e006ab7ecd8a201143 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; NOT; CMOS; SMD; XSON8; Mini Logic
Mounting: SMD
Case: XSON8
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NOT
Kind of integrated circuit: buffer; inverter
Family: AUP
Technology: CMOS
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
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NUP1301U,115 NUP1301U,115 NEXPERIA NUP1301U.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323; ESD
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
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634+0.11 EUR
867+0.08 EUR
916+0.08 EUR
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PSMN4R2-80YSEX NEXPERIA PSMN4R2-80YSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 80V
Drain current: 123A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 698A
Mounting: SMD
auf Bestellung 1498 Stücke:
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PMEG6010CEH-QX NEXPERIA PMEG6010CEH-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG6010CEJ-QX NEXPERIA PMEG6010CEJ-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
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PMEG6010CEJF PMEG6010CEJF NEXPERIA PMEG6010CEJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 68pF
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74HC377D,653 74HC377D,653 NEXPERIA 74HC377D,653.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; reel,tape; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Trigger: positive-edge-triggered
Technology: CMOS
auf Bestellung 1295 Stücke:
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70+1.03 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
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74ALVC373D,118 74ALVC373.pdf
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
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74ALVC373PW,118 74ALVC373.pdf
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS,TTL; SMD; ALVC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ALVC
Technology: CMOS; TTL
Number of inputs: 1
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BAV20,113 BAV20.pdf
Hersteller: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
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I74F04D602
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.09 EUR
500+0.94 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BUK9616-75B,118 BUK9616-75B.pdf
BUK9616-75B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.64 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BZX84-C11,215 BZX84_SER.pdf
BZX84-C11,215
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.09 EUR
1169+0.06 EUR
1389+0.05 EUR
1709+0.04 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BAT160S-QX BAT160S-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 1A
Case: SOT223
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 0.65V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
Case: SOT78; TO220AB
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.61 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PMEG150G20ELRX pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC5F444F15A0C7&compId=PMEG150G20ELR.pdf?ci_sign=19857758531d55dce69ebd727a5dc80211184075
PMEG150G20ELRX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
Max. forward impulse current: 70A
Leakage current: 30nA
auf Bestellung 1231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
215+0.33 EUR
311+0.23 EUR
397+0.18 EUR
420+0.17 EUR
Mindestbestellmenge: 215
Im Einkaufswagen  Stück im Wert von  UAH
PMEG120G10ELRX pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC0E25761020C7&compId=PMEG120G10ELR.pdf?ci_sign=1933a80a3566aaaeb4742289676fb4ae79959e32
PMEG120G10ELRX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG150G10ELRX pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC1F4E42CFC0C7&compId=PMEG150G10ELR.pdf?ci_sign=21f97ff5fd1e3b66e6f6870ccf29fdfb3471eae2
PMEG150G10ELRX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 50A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG120G20ELRX pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEEC16551F4FC0C7&compId=PMEG120G20ELR.pdf?ci_sign=b29d52444ff8a322003bd0778bc00d277d0c84a6
PMEG120G20ELRX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 70A
Leakage current: 30nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZU5.6B2L,315 PZUXBL_SER.pdf
PZU5.6B2L,315
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 7910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
472+0.15 EUR
697+0.10 EUR
824+0.09 EUR
1273+0.06 EUR
1345+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
NUP1301,215 NUP1301.pdf
NUP1301,215
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 80V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
515+0.14 EUR
569+0.13 EUR
612+0.12 EUR
747+0.10 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G14GM,115 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BB19AA1A00D5&compId=74LVC1G14GM%2C115.pdf?ci_sign=33e28eaafe5e76b0146ee3bc4d11a05c55d8471a
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G14GN,132 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BABF965440D5&compId=74LVC1G14GN%2C132.pdf?ci_sign=1000de8f0ae7c14c76bec42c1851d68669d5fbfa
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G14GS,132 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BABF965580D5&compId=74LVC1G14GS%2C132.pdf?ci_sign=3ef6b7ac5e6b39fa42de1e37ae9a32b85152d895
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G14GX4-Q100Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDEABC14E788B3C60D6&compId=74LVC1G14_Q100.pdf?ci_sign=7b7214f3680c8723510d4c6be0c13917536a164a
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G14GX4Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BB0D045960D5&compId=74LVC1G14GX4Z.pdf?ci_sign=1bbc97767a208b4d5ed14fae6fa6f147b59f6a12
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ9V1AL,215 MMBZxAL_SER.pdf
MMBZ9V1AL,215
+1
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
264+0.27 EUR
336+0.21 EUR
674+0.11 EUR
808+0.09 EUR
1250+0.06 EUR
1345+0.05 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BUK7M33-60EX BUK7M33-60E.pdf
BUK7M33-60EX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
auf Bestellung 6624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
96+0.75 EUR
160+0.45 EUR
169+0.42 EUR
500+0.41 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BUK7M6R3-40EX BUK7M6R3-40E.pdf
BUK7M6R3-40EX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 1491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
72+0.99 EUR
97+0.74 EUR
102+0.70 EUR
200+0.67 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
BUK765R0-100E,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BC3B2B6F3051BF&compId=BUK765R0-100E.118-DTE.PDF?ci_sign=8841be159cbf7b5deb23a152b4737d8f9ba17627
BUK765R0-100E,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R8-80E,118 BUK763R8-80E.pdf
BUK763R8-80E,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K52-60EX BUK7K52-60E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K134-100EX BUK7K134-100E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7Y7R0-40HX BUK7Y7R0-40H.pdf
BUK7Y7R0-40HX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
74+0.98 EUR
94+0.77 EUR
99+0.73 EUR
500+0.72 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K15-80EX BUK7K15-80E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K23-80EX BUK7K23-80E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K32-100EX BUK7K32-100E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7D25-40EX BUK7D25-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7J1R4-40HX BUK7J1R4-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7Y08-40B,115 BUK7Y08-40B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7880-55A/CUX BUK7880-55A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7D36-60EX BUK7D36-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7K8R7-40EX BUK7K8R7-40E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
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BUK753R1-40E,127 BUK753R1-40E.pdf
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK766R0-60E,118 BUK766R0-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BUK7E3R5-60E,127 BUK7E3R5-60E.pdf
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP56-10,135 pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A49866ABDA1E15EA&compId=BCP56-10.115.pdf?ci_sign=e2dd66796bea015c4e26474d3eed0344b935fa85
BCP56-10,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT164D,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4A99DD315E0D5&compId=74AHCT164D%2C118.pdf?ci_sign=f744ea9d30a0d27262220a71459903f3cf24ae7f
74AHCT164D,118
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00GM,115 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA7E8E6380D5&compId=74LVC1G00GM%2C115.pdf?ci_sign=fe5ee9e839eb7ed5dc163a050919f6376c484eab
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00GM,132 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A942060D5&compId=74LVC1G00GM%2C132.pdf?ci_sign=31e0ab67a868b75e2ed51f9a42ca29d13f0b1b7e
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00GN,132 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A9421A0D5&compId=74LVC1G00GN%2C132.pdf?ci_sign=4347b45638c43e7a9279c9f82456507075caf4d9
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G00GS,132 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA5A9422E0D5&compId=74LVC1G00GS%2C132.pdf?ci_sign=da56b3827720b4418f2e519431bfe67de73108d7
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70L,315 BAS70L.pdf
BAS70L,315
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 70V; 70mA
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Capacitance: 2pF
auf Bestellung 6800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
521+0.14 EUR
727+0.10 EUR
861+0.08 EUR
1378+0.05 EUR
1458+0.05 EUR
1511+0.05 EUR
Mindestbestellmenge: 417
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74HCT240BQ,115 74HC_HCT240.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,8bit,buffer,octal,inverting,line driver
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: 3-state; 8bit; buffer; inverting; line driver; octal
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16W.115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9F60BBB7D09E28&compId=BAS16_SER.pdf?ci_sign=a94ce18b5c693f3c795ecbf6a0c4299e1741bff8
BAS16W.115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16WF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9F60BBB7D09E28&compId=BAS16_SER.pdf?ci_sign=a94ce18b5c693f3c795ecbf6a0c4299e1741bff8
BAS16WF
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT2G32DC,125 74HCT2G32D-DTE.PDF
74HCT2G32DC,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: Mini Logic
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74HCT32DB,112 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5BAA6FCCE05AA17&compId=74HC_HCT32.pdf?ci_sign=565f71577e345574605d070c021bff049056625c
74HCT32DB,112
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Kind of package: tube
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Mounting: SMD
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.20 EUR
397+0.19 EUR
Mindestbestellmenge: 365
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BZT52H-C5V1,115 BZT52H-DTE.pdf
BZT52H-C5V1,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.1V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
782+0.09 EUR
1132+0.06 EUR
1309+0.06 EUR
1828+0.04 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
74HC173PW,112 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B7CD7984BC770A18&compId=74HC_HCT173.pdf?ci_sign=9accb626a29a94aac98e34959dc43987f70cc6e7
74HC173PW,112
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; TSSOP16; tube; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
auf Bestellung 1319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
233+0.31 EUR
254+0.28 EUR
290+0.25 EUR
307+0.23 EUR
Mindestbestellmenge: 218
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74AUP3G3404GSX pVersion=0046&contRep=ZT&docId=005056AB281E1EDEABC14C2BC75CA0D6&compId=74AUP3G3404.pdf?ci_sign=9f486dd26f574402f09284e006ab7ecd8a201143
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; NOT; CMOS; SMD; XSON8; Mini Logic
Mounting: SMD
Case: XSON8
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NOT
Kind of integrated circuit: buffer; inverter
Family: AUP
Technology: CMOS
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP1301U,115 NUP1301U.pdf
NUP1301U,115
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SC70,SOT323; ESD
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
auf Bestellung 3025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
424+0.17 EUR
499+0.14 EUR
634+0.11 EUR
867+0.08 EUR
916+0.08 EUR
Mindestbestellmenge: 278
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PSMN4R2-80YSEX PSMN4R2-80YSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 80V
Drain current: 123A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 698A
Mounting: SMD
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
37+1.94 EUR
39+1.84 EUR
500+1.77 EUR
Mindestbestellmenge: 21
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PMEG6010CEH-QX PMEG6010CEH-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG6010CEJ-QX PMEG6010CEJ-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG6010CEJF PMEG6010CEJ.pdf
PMEG6010CEJF
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 10A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 68pF
Produkt ist nicht verfügbar
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74HC377D,653 74HC377D,653.pdf
74HC377D,653
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; reel,tape; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Trigger: positive-edge-triggered
Technology: CMOS
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
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