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PMEG4010EPK,315 NEXPERIA PMEG4010EPK.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD1608; SMD; 40V; 1A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD1608
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.6V
Leakage current: 20µA
Max. forward impulse current: 5A
Reverse recovery time: 3ns
Kind of package: reel; tape
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PMEG4010ESBYL NEXPERIA PMEG4010ESB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN1006-2,SOD993; SMD; 40V; 1A; 2.9ns
Type of diode: Schottky rectifying
Case: DSN1006-2; SOD993
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.61V
Max. forward impulse current: 10A
Reverse recovery time: 2.9ns
Kind of package: reel; tape
Power dissipation: 1.78W
Max. load current: 4A
Produkt ist nicht verfügbar
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PMEG4010ET-QR PMEG4010ET-QR NEXPERIA PMEG4010ET-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 420mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 9A
Kind of package: reel; tape
Power dissipation: 0.42W
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG4010ET,215 PMEG4010ET,215 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7E8B5C751FC5E27&compId=PMEG4010EX-DTE.pdf?ci_sign=afa89f92eff75e16298c1ef6c1020f9f01ca2466 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 9A
Kind of package: reel; tape
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PMEG4010ETP-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.49V
Leakage current: 50µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 2.5W
Application: automotive industry
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PMEG4010ETP,115 PMEG4010ETP,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBAADE5400E2143&compId=PMEG4010ETP.pdf?ci_sign=5e9437c6eb7f84f7bfe2c808f196fdd07ddcbfa7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG4010ER-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 3000 Stücke:
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3000+0.096 EUR
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74AHC573D,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDDCB45868C00D3&compId=74AHC_AHCT573.pdf?ci_sign=1f172fd775e6162716f267f2f962f8b5cd250dbf Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO20
Number of inputs: 1
Supply voltage: 2...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; D latch; octal
Family: AHC
Mounting: SMD
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74AHC573BQ,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDDCB45868AC0D3&compId=74AHC_AHCT573.pdf?ci_sign=209d6116b35bf19eac384aa0e47454feb431dfe7 Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 1
Supply voltage: 2...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; D latch; octal
Family: AHC
Mounting: SMD
Produkt ist nicht verfügbar
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NX3008PBK,215 NX3008PBK,215 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081DECA9F9B2259&compId=NX3008PBK.pdf?ci_sign=facf5cd3a7ba879335284ab23291f50853913675 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.23A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -230mA
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.72nC
auf Bestellung 6426 Stücke:
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385+0.19 EUR
556+0.13 EUR
699+0.1 EUR
748+0.096 EUR
1520+0.047 EUR
1608+0.044 EUR
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NX3008PBKS,115 NX3008PBKS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081DAF075E16259&compId=NX3008PBKS.pdf?ci_sign=43da928c5124f6adffa2b7b10f6a2dd02e6d5872 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Power dissipation: 80mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.72nC
auf Bestellung 3816 Stücke:
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162+0.44 EUR
230+0.31 EUR
291+0.25 EUR
421+0.17 EUR
667+0.11 EUR
705+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 162
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PMEG030V030EPDZ NEXPERIA PMEG030V030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 30V; 3A; reel,tape
Mounting: SMD
Case: CFP15; SOT1289
Capacitance: 495pF
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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PMEG030V050EPDZ NEXPERIA PMEG030V050EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 30V; 5A; reel,tape
Mounting: SMD
Case: CFP15; SOT1289
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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BZV85-C11,113 BZV85-C11,113 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A1BC13A6F26F15EA&compId=BZV85-C10.113.pdf?ci_sign=c3925175a6a784b84a160944f6adb7a01131cd12 Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 11V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
auf Bestellung 4315 Stücke:
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795+0.09 EUR
1355+0.053 EUR
1505+0.048 EUR
1720+0.042 EUR
1820+0.039 EUR
Mindestbestellmenge: 795
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PSMN1R8-40YLC,115 PSMN1R8-40YLC,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED780818C50454BC259&compId=PSMN1R8-40YLC.pdf?ci_sign=450192be85df9d8cd478a262677bf8a040d8a13d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-40PS,127 PSMN2R8-40PS,127 NEXPERIA PSMN2R8-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 797A
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PSMN4R5-40PS,127 PSMN4R5-40PS,127 NEXPERIA PSMN4R5-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 545A
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BUK962R6-40E,118 NEXPERIA BUK962R6-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 885A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 263W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 80.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 885A
Application: automotive industry
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BUK9Y3R5-40E,115 NEXPERIA BUK9Y3R5-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 591A
Application: automotive industry
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PSMN2R2-40BS,118 NEXPERIA PHGLS24325-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 962A
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PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081C7AF53FD8259&compId=PSMN2R2-40PS.pdf?ci_sign=966b56384dfd5c0296dfa856d01245d564d45ccb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R6-40YS,115 PSMN2R6-40YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081955B4F498259&compId=PSMN2R6-40YS.pdf?ci_sign=ce545379d9b8422113c4a1bd62cc43c625063f9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN3R3-40YS,115 NEXPERIA PSMN3R3-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 546A
Produkt ist nicht verfügbar
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BCW60B,215 BCW60B,215 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB82531EE988FA9C204A4B18BF&compId=BCW60.pdf?ci_sign=afa4f0918b6fd02ef162e03c583a09a6b114f39e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 5364 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
658+0.11 EUR
860+0.083 EUR
964+0.074 EUR
2025+0.035 EUR
2137+0.033 EUR
Mindestbestellmenge: 385
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BCW60D,215 BCW60D,215 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB82531EE988FA9C204A4B18BF&compId=BCW60.pdf?ci_sign=afa4f0918b6fd02ef162e03c583a09a6b114f39e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 100...630
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 6970 Stücke:
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250+0.29 EUR
414+0.17 EUR
665+0.11 EUR
806+0.089 EUR
2273+0.031 EUR
2404+0.03 EUR
Mindestbestellmenge: 250
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BZX384-B39,115 BZX384-B39,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 5690 Stücke:
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1244+0.057 EUR
1786+0.04 EUR
1985+0.036 EUR
2146+0.033 EUR
2253+0.032 EUR
2591+0.028 EUR
2733+0.026 EUR
Mindestbestellmenge: 1244
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BZX384-C68,115 BZX384-C68,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 68V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 4730 Stücke:
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736+0.097 EUR
855+0.084 EUR
1038+0.069 EUR
2184+0.033 EUR
2578+0.028 EUR
2825+0.025 EUR
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BZX384-C27,115 BZX384-C27,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 3123 Stücke:
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313+0.23 EUR
379+0.19 EUR
443+0.16 EUR
676+0.11 EUR
827+0.087 EUR
1345+0.053 EUR
2253+0.032 EUR
2381+0.03 EUR
Mindestbestellmenge: 313
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BC807W-QF BC807W-QF NEXPERIA BC807W-Q_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 290mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.29W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PDTC124ET-QVL NEXPERIA PDTC124ET-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 290000 Stücke:
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10000+0.021 EUR
Mindestbestellmenge: 10000
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BCW68GR BCW68GR NEXPERIA BCW68X_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 80MHz
Pulsed collector current: 1A
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74HCT1G86GV,125 74HCT1G86GV,125 NEXPERIA pVersion=0046&contRep=ZT&docId=E1C043052BC76FF1A6F5005056AB5A8F&compId=74HC_HCT1G86.pdf?ci_sign=7c53038edcde142275e392dba6e4e11b84e4aeab Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SC74A; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
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241+0.3 EUR
356+0.2 EUR
417+0.17 EUR
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PSMN4R0-30YL,115 NEXPERIA PSMN4R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 396A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 396A
Power dissipation: 69W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.73mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN4R3-30PL,127 PSMN4R3-30PL,127 NEXPERIA PSMN4R3-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhancement
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74HCT4351D,112 74HCT4351D,112 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BD89BB17471EAA18&compId=74HC_HCT4351_CNV.pdf?ci_sign=c3a7239f88d82990ef5b66748b074d08e05cb8b0 Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer,latch; Ch: 8; CMOS,TTL; SMD
Case: SO20
Technology: CMOS; TTL
Mounting: SMD
Kind of package: tube
Number of channels: 8
Kind of integrated circuit: demultiplexer; latch; multiplexer
Family: HCT
Type of integrated circuit: digital
auf Bestellung 279 Stücke:
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279+0.26 EUR
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74HCT4351D,118 NEXPERIA 74HC_HCT4351.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SP8T-Z; Ch: 8; SO20
Case: SO20
Mounting: SMD
Kind of package: reel; tape
Number of channels: 8
Operating temperature: -40...125°C
Output configuration: SP8T-Z
Kind of integrated circuit: demultiplexer; multiplexer
Family: HCT
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: analog switch
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BUK6D23-40EX NEXPERIA BUK6D23-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK6D230-80EX NEXPERIA BUK6D230-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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HEF4521BT,653 HEF4521BT,653 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A1BE6AA7CBD955EA&compId=HEF4521BP.652.pdf?ci_sign=cee369c85c6a5e1938c81c97b8e1dd1b83276a60 Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider,oscillator; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 24-stage; frequency divider; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Family: HEF4000B
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101+0.71 EUR
120+0.6 EUR
127+0.56 EUR
250+0.55 EUR
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RB751CS40,315 NEXPERIA RB751CS40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.12A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Capacitance: 2pF
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RB521CS30L,315 RB521CS30L,315 NEXPERIA RB521CS30L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.405V
Max. forward impulse current: 3A
Kind of package: reel; tape
Capacitance: 8pF
Produkt ist nicht verfügbar
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RB521S30,115 NEXPERIA RB521S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
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PHPT610030NKX NEXPERIA PHPT610030NK.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 100V; 3A; LFPAK56D,SOT1205
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: LFPAK56D; SOT1205
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
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BUK9Y104-100B,115 NEXPERIA BUK9Y104-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Drain-source voltage: 100V
Drain current: 10.48A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 59A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
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PMP4501QASZ NEXPERIA PMP4501QAS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
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74LVC14AD,118 74LVC14AD,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA10336200D5&compId=74LVC14AD%2C118.pdf?ci_sign=ecd1bfaffaf25746d1464ff79b6d7022cc8341c0 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 1.2VDC,1.65÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 16ns
auf Bestellung 724 Stücke:
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309+0.23 EUR
348+0.21 EUR
382+0.19 EUR
410+0.17 EUR
472+0.15 EUR
500+0.14 EUR
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1PS70SB10,115 1PS70SB10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BEA1BBDE52AA3E28&compId=1PS70SB10.pdf?ci_sign=934d58e3673a16a4e4b653cd0539ab8764ffd76f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; reel,tape
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.8V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
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BZX585-C10,115 BZX585-C10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BC8723B42E5BB1BF&compId=BZX585-DTE.pdf?ci_sign=30f495676bf030672442842723e90e9c1064edd6 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; Ifmax: 200mA
Power dissipation: 0.3W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.2µA
auf Bestellung 2619 Stücke:
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646+0.11 EUR
964+0.074 EUR
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1480+0.048 EUR
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BZX585-B10,115 BZX585-B10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BC8723B42E5BB1BF&compId=BZX585-DTE.pdf?ci_sign=30f495676bf030672442842723e90e9c1064edd6 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; Ifmax: 200mA
Power dissipation: 0.3W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±2%
Max. load current: 0.2A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.2µA
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BZX84J-C10,115 BZX84J-C10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE79BAA560B10A38749&compId=BZX84J_SER.pdf?ci_sign=8d26092d8d75494725a250ec8779a7c9bbed119b Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.55W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.25A
Max. forward voltage: 0.9V
Semiconductor structure: single diode
Zener voltage: 10V
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1150+0.062 EUR
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1902+0.038 EUR
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PEMB10,115 PEMB10,115 NEXPERIA PEMB10.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 100
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BZB784-C10,115 BZB784-C10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0E46A3E9E6840C7&compId=BZB784_SER.pdf?ci_sign=2e2955f1e4f93c4cb970a328ead63fa8da51242b Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 10V; SMD; reel,tape; SOT323; Ifmax: 200mA
Power dissipation: 0.35W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 10V
Leakage current: 0.2µA
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BZB984-C10,115 NEXPERIA BZB984_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 10V; SMD; reel,tape; SOT663; Ifmax: 200mA
Power dissipation: 0.425W
Case: SOT663
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 10V
Leakage current: 0.2µA
Produkt ist nicht verfügbar
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BZX84J-B10,115 BZX84J-B10,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE79BAA560B10A38749&compId=BZX84J_SER.pdf?ci_sign=8d26092d8d75494725a250ec8779a7c9bbed119b Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.55W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±2%
Max. load current: 0.25A
Max. forward voltage: 0.9V
Semiconductor structure: single diode
Zener voltage: 10V
Produkt ist nicht verfügbar
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BUK7Y9R9-80EX NEXPERIA BUK7Y9R9-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Application: automotive industry
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 354A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 80V
Drain current: 63A
On-state resistance: 24.9mΩ
Type of transistor: N-MOSFET
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BF822-QR BF822-QR NEXPERIA BF822-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 50
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84-C4V7,235 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
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10000+0.019 EUR
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BZX384-C10-QX NEXPERIA BZX384-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
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3000+0.028 EUR
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BZX384-C16,115 BZX384-C16,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 1986 Stücke:
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477+0.15 EUR
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872+0.082 EUR
1327+0.054 EUR
1986+0.036 EUR
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BZX384-C56,115 BZX384-C56,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
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627+0.11 EUR
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PMEG4010EPK,315 PMEG4010EPK.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD1608; SMD; 40V; 1A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD1608
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.6V
Leakage current: 20µA
Max. forward impulse current: 5A
Reverse recovery time: 3ns
Kind of package: reel; tape
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PMEG4010ESBYL PMEG4010ESB.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN1006-2,SOD993; SMD; 40V; 1A; 2.9ns
Type of diode: Schottky rectifying
Case: DSN1006-2; SOD993
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.61V
Max. forward impulse current: 10A
Reverse recovery time: 2.9ns
Kind of package: reel; tape
Power dissipation: 1.78W
Max. load current: 4A
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PMEG4010ET-QR PMEG4010ET-Q.pdf
PMEG4010ET-QR
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 420mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 9A
Kind of package: reel; tape
Power dissipation: 0.42W
Application: automotive industry
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PMEG4010ET,215 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7E8B5C751FC5E27&compId=PMEG4010EX-DTE.pdf?ci_sign=afa89f92eff75e16298c1ef6c1020f9f01ca2466
PMEG4010ET,215
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 9A
Kind of package: reel; tape
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PMEG4010ETP-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.49V
Leakage current: 50µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG4010ETP,115 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBAADE5400E2143&compId=PMEG4010ETP.pdf?ci_sign=5e9437c6eb7f84f7bfe2c808f196fdd07ddcbfa7
PMEG4010ETP,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG4010ER-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.096 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74AHC573D,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDDCB45868C00D3&compId=74AHC_AHCT573.pdf?ci_sign=1f172fd775e6162716f267f2f962f8b5cd250dbf
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO20
Number of inputs: 1
Supply voltage: 2...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; D latch; octal
Family: AHC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC573BQ,115 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDDCB45868AC0D3&compId=74AHC_AHCT573.pdf?ci_sign=209d6116b35bf19eac384aa0e47454feb431dfe7
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; IN: 1; CMOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN20
Number of inputs: 1
Supply voltage: 2...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 3-state; D latch; octal
Family: AHC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NX3008PBK,215 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081DECA9F9B2259&compId=NX3008PBK.pdf?ci_sign=facf5cd3a7ba879335284ab23291f50853913675
NX3008PBK,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.23A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -230mA
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.72nC
auf Bestellung 6426 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
556+0.13 EUR
699+0.1 EUR
748+0.096 EUR
1520+0.047 EUR
1608+0.044 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
NX3008PBKS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081DAF075E16259&compId=NX3008PBKS.pdf?ci_sign=43da928c5124f6adffa2b7b10f6a2dd02e6d5872
NX3008PBKS,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Power dissipation: 80mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.72nC
auf Bestellung 3816 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
230+0.31 EUR
291+0.25 EUR
421+0.17 EUR
667+0.11 EUR
705+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PMEG030V030EPDZ PMEG030V030EPD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 30V; 3A; reel,tape
Mounting: SMD
Case: CFP15; SOT1289
Capacitance: 495pF
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG030V050EPDZ PMEG030V050EPD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 30V; 5A; reel,tape
Mounting: SMD
Case: CFP15; SOT1289
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZV85-C11,113 pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A1BC13A6F26F15EA&compId=BZV85-C10.113.pdf?ci_sign=c3925175a6a784b84a160944f6adb7a01131cd12
BZV85-C11,113
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 11V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
auf Bestellung 4315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
795+0.09 EUR
1355+0.053 EUR
1505+0.048 EUR
1720+0.042 EUR
1820+0.039 EUR
Mindestbestellmenge: 795
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-40YLC,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780818C50454BC259&compId=PSMN1R8-40YLC.pdf?ci_sign=450192be85df9d8cd478a262677bf8a040d8a13d
PSMN1R8-40YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R8-40PS,127 PSMN2R8-40PS.pdf
PSMN2R8-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 797A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
PSMN4R5-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 545A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK962R6-40E,118 BUK962R6-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 885A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 263W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 80.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 885A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9Y3R5-40E,115 BUK9Y3R5-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 591A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-40BS,118 PHGLS24325-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 962A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-40PS,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081C7AF53FD8259&compId=PSMN2R2-40PS.pdf?ci_sign=966b56384dfd5c0296dfa856d01245d564d45ccb
PSMN2R2-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R6-40YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78081955B4F498259&compId=PSMN2R6-40YS.pdf?ci_sign=ce545379d9b8422113c4a1bd62cc43c625063f9d
PSMN2R6-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-40YS,115 PSMN3R3-40YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 546A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW60B,215 pVersion=0046&contRep=ZT&docId=005056AB82531EE988FA9C204A4B18BF&compId=BCW60.pdf?ci_sign=afa4f0918b6fd02ef162e03c583a09a6b114f39e
BCW60B,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 5364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
658+0.11 EUR
860+0.083 EUR
964+0.074 EUR
2025+0.035 EUR
2137+0.033 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCW60D,215 pVersion=0046&contRep=ZT&docId=005056AB82531EE988FA9C204A4B18BF&compId=BCW60.pdf?ci_sign=afa4f0918b6fd02ef162e03c583a09a6b114f39e
BCW60D,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 100...630
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 6970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
414+0.17 EUR
665+0.11 EUR
806+0.089 EUR
2273+0.031 EUR
2404+0.03 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BZX384-B39,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1
BZX384-B39,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 5690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1244+0.057 EUR
1786+0.04 EUR
1985+0.036 EUR
2146+0.033 EUR
2253+0.032 EUR
2591+0.028 EUR
2733+0.026 EUR
Mindestbestellmenge: 1244
Im Einkaufswagen  Stück im Wert von  UAH
BZX384-C68,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1
BZX384-C68,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 68V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 4730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
736+0.097 EUR
855+0.084 EUR
1038+0.069 EUR
2184+0.033 EUR
2578+0.028 EUR
2825+0.025 EUR
Mindestbestellmenge: 736
Im Einkaufswagen  Stück im Wert von  UAH
BZX384-C27,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1
BZX384-C27,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 3123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
379+0.19 EUR
443+0.16 EUR
676+0.11 EUR
827+0.087 EUR
1345+0.053 EUR
2253+0.032 EUR
2381+0.03 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BC807W-QF BC807W-Q_SER.pdf
BC807W-QF
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 290mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.29W
Case: SC70; SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PDTC124ET-QVL PDTC124ET-Q.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 290000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.021 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GR BCW68X_SER.pdf
BCW68GR
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 80MHz
Pulsed collector current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HCT1G86GV,125 pVersion=0046&contRep=ZT&docId=E1C043052BC76FF1A6F5005056AB5A8F&compId=74HC_HCT1G86.pdf?ci_sign=7c53038edcde142275e392dba6e4e11b84e4aeab
74HCT1G86GV,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SC74A; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
241+0.3 EUR
356+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R0-30YL,115 PSMN4R0-30YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 396A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 396A
Power dissipation: 69W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.73mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R3-30PL,127 PSMN4R3-30PL.pdf
PSMN4R3-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HCT4351D,112 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BD89BB17471EAA18&compId=74HC_HCT4351_CNV.pdf?ci_sign=c3a7239f88d82990ef5b66748b074d08e05cb8b0
74HCT4351D,112
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer,latch; Ch: 8; CMOS,TTL; SMD
Case: SO20
Technology: CMOS; TTL
Mounting: SMD
Kind of package: tube
Number of channels: 8
Kind of integrated circuit: demultiplexer; latch; multiplexer
Family: HCT
Type of integrated circuit: digital
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
191+0.38 EUR
214+0.33 EUR
253+0.28 EUR
279+0.26 EUR
Mindestbestellmenge: 191
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74HCT4351D,118 74HC_HCT4351.pdf
Hersteller: NEXPERIA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SP8T-Z; Ch: 8; SO20
Case: SO20
Mounting: SMD
Kind of package: reel; tape
Number of channels: 8
Operating temperature: -40...125°C
Output configuration: SP8T-Z
Kind of integrated circuit: demultiplexer; multiplexer
Family: HCT
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
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BUK6D23-40EX BUK6D23-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK6D230-80EX BUK6D230-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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HEF4521BT,653 pVersion=0046&contRep=ZT&docId=005056AB752F1ED4A1BE6AA7CBD955EA&compId=HEF4521BP.652.pdf?ci_sign=cee369c85c6a5e1938c81c97b8e1dd1b83276a60
HEF4521BT,653
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider,oscillator; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 24-stage; frequency divider; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Family: HEF4000B
auf Bestellung 1129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
91+0.79 EUR
101+0.71 EUR
120+0.6 EUR
127+0.56 EUR
250+0.55 EUR
Mindestbestellmenge: 66
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RB751CS40,315 RB751CS40.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.12A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Capacitance: 2pF
Produkt ist nicht verfügbar
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RB521CS30L,315 RB521CS30L.pdf
RB521CS30L,315
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.405V
Max. forward impulse current: 3A
Kind of package: reel; tape
Capacitance: 8pF
Produkt ist nicht verfügbar
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RB521S30,115 RB521S30.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PHPT610030NKX PHPT610030NK.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 100V; 3A; LFPAK56D,SOT1205
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: LFPAK56D; SOT1205
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
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BUK9Y104-100B,115 BUK9Y104-100B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Drain-source voltage: 100V
Drain current: 10.48A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 59A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMP4501QASZ PMP4501QAS.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.16 EUR
Mindestbestellmenge: 5000
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74LVC14AD,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4BA10336200D5&compId=74LVC14AD%2C118.pdf?ci_sign=ecd1bfaffaf25746d1464ff79b6d7022cc8341c0
74LVC14AD,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 1.2VDC,1.65÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 16ns
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
309+0.23 EUR
348+0.21 EUR
382+0.19 EUR
410+0.17 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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1PS70SB10,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BEA1BBDE52AA3E28&compId=1PS70SB10.pdf?ci_sign=934d58e3673a16a4e4b653cd0539ab8764ffd76f
1PS70SB10,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; reel,tape
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.8V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
306+0.23 EUR
Mindestbestellmenge: 306
Im Einkaufswagen  Stück im Wert von  UAH
BZX585-C10,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BC8723B42E5BB1BF&compId=BZX585-DTE.pdf?ci_sign=30f495676bf030672442842723e90e9c1064edd6
BZX585-C10,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; Ifmax: 200mA
Power dissipation: 0.3W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.2µA
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
404+0.18 EUR
486+0.15 EUR
646+0.11 EUR
964+0.074 EUR
1401+0.051 EUR
1480+0.048 EUR
Mindestbestellmenge: 404
Im Einkaufswagen  Stück im Wert von  UAH
BZX585-B10,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BC8723B42E5BB1BF&compId=BZX585-DTE.pdf?ci_sign=30f495676bf030672442842723e90e9c1064edd6
BZX585-B10,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; Ifmax: 200mA
Power dissipation: 0.3W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±2%
Max. load current: 0.2A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.2µA
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
532+0.13 EUR
658+0.11 EUR
745+0.096 EUR
Mindestbestellmenge: 532
Im Einkaufswagen  Stück im Wert von  UAH
BZX84J-C10,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79BAA560B10A38749&compId=BZX84J_SER.pdf?ci_sign=8d26092d8d75494725a250ec8779a7c9bbed119b
BZX84J-C10,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.55W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.25A
Max. forward voltage: 0.9V
Semiconductor structure: single diode
Zener voltage: 10V
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
607+0.12 EUR
1150+0.062 EUR
1749+0.041 EUR
1902+0.038 EUR
Mindestbestellmenge: 358
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PEMB10,115 PEMB10.pdf
PEMB10,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZB784-C10,115 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA0E46A3E9E6840C7&compId=BZB784_SER.pdf?ci_sign=2e2955f1e4f93c4cb970a328ead63fa8da51242b
BZB784-C10,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 10V; SMD; reel,tape; SOT323; Ifmax: 200mA
Power dissipation: 0.35W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 10V
Leakage current: 0.2µA
Produkt ist nicht verfügbar
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BZB984-C10,115 BZB984_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 10V; SMD; reel,tape; SOT663; Ifmax: 200mA
Power dissipation: 0.425W
Case: SOT663
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 10V
Leakage current: 0.2µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84J-B10,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79BAA560B10A38749&compId=BZX84J_SER.pdf?ci_sign=8d26092d8d75494725a250ec8779a7c9bbed119b
BZX84J-B10,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.55W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±2%
Max. load current: 0.25A
Max. forward voltage: 0.9V
Semiconductor structure: single diode
Zener voltage: 10V
Produkt ist nicht verfügbar
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BUK7Y9R9-80EX BUK7Y9R9-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Application: automotive industry
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 354A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 80V
Drain current: 63A
On-state resistance: 24.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BF822-QR BF822-Q.pdf
BF822-QR
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 50
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84-C4V7,235 BZX84_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.019 EUR
Mindestbestellmenge: 10000
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BZX384-C10-QX BZX384-Q_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.028 EUR
Mindestbestellmenge: 3000
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BZX384-C16,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1
BZX384-C16,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 1986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
404+0.18 EUR
477+0.15 EUR
721+0.099 EUR
872+0.082 EUR
1327+0.054 EUR
1986+0.036 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BZX384-C56,115 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8979D49A0D8A873D7&compId=BZX384_SER.pdf?ci_sign=257683e68a3f85963034366d1896456e783e82e1
BZX384-C56,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 56V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
627+0.11 EUR
Mindestbestellmenge: 627
Im Einkaufswagen  Stück im Wert von  UAH
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