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SA64ALFG SA64ALFG onsemi SA5.0A_Series.pdf Description: TVS DIODE 64VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
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NTD4959NHT4G NTD4959NHT4G onsemi NTD4959NH.pdf Description: MOSFET N-CH 30V 9A/58A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4810NT4G NTD4810NT4G onsemi ntd4810n-d.pdf Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12 V
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NTD4810NT4G NTD4810NT4G onsemi ntd4810n-d.pdf Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12 V
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NTD4810NHT4G NTD4810NHT4G onsemi ntd4810nh-d.pdf Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
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FDME820NZT-P onsemi Description: MOSFET N-CH 20V 9A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 700mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
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FMS6143CSX FMS6143CSX onsemi fms6143-d.pdf Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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FMS6143ACSX FMS6143ACSX onsemi FMS6143A-D.pdf Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NOIX1SE045KB-GTI onsemi image-sensors Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Bulk
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
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NOIX1SE045KB-GTI onsemi image-sensors Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
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NOIX2SE045KB-GTI onsemi image-sensors Description: XGS45MP 12PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12
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NOIX1SN045KB-GTI NOIX1SN045KB-GTI onsemi image-sensors Description: XGS45MP 24PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31.0
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NOIX2SN045KB-GTI NOIX2SN045KB-GTI onsemi image-sensors Description: XGS45MP 12PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12.0
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NOIX0SN045KB-GTI NOIX0SN045KB-GTI onsemi image-sensors Description: XGS45MP 48PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48.0
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NOIX0SE045KB-GTI onsemi image-sensors Description: XGS45MP 48PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48
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BC548BRL1G BC548BRL1G onsemi BC546-D.PDF Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC548BZL1G BC548BZL1G onsemi BC546-D.PDF Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BXL4004-1E BXL4004-1E onsemi EN9050-D.PDF Description: BXL4004 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 20 V
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NTB5405NT4G NTB5405NT4G onsemi ntb5405n-d.pdf Description: MOSFET N-CH 40V 116A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
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NVB5404NT4G NVB5404NT4G onsemi ntb5404n-d.pdf Description: MOSFET N-CH 40V 24A D2PAK
Packaging: Cut Tape (CT)
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HCPL2631WV HCPL2631WV onsemi HCPL2631-D.PDF Description: OPTOISO 2.5KV 2CH OPN COLL 8MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
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NB7L216MNEVB NB7L216MNEVB onsemi Description: EVAL BOARD FOR NB7L216MN
Packaging: Bulk
Function: Clock Buffer/Driver/Receiver/Translator
Type: Timing
Utilized IC / Part: NB7L1216
Supplied Contents: Board(s)
Primary Attributes: Input Up To 12Gb/s and 8.5GHz
Embedded: No
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BC847CDXV6T5 BC847CDXV6T5 onsemi BC847CDXV6T1-D.PDF Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
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FODM217CR4 FODM217CR4 onsemi fodm214-d.pdf Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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FSB70450 FSB70450 onsemi fsb70450-d.pdf Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
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FSB70450 FSB70450 onsemi fsb70450-d.pdf Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
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FSB70550 FSB70550 onsemi fsb70550-d.pdf Description: MODULE SPM 500V 5.3A 27PWRLQFN
Voltage: 500 V
Current: 5.3 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 27-PowerLQFN Module
Packaging: Tape & Reel (TR)
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FSB70550 FSB70550 onsemi fsb70550-d.pdf Description: MODULE SPM 500V 5.3A 27PWRLQFN
Voltage: 500 V
Current: 5.3 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 27-PowerLQFN Module
Packaging: Cut Tape (CT)
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NOIX1SE8000B-LTI1 NOIX1SE8000B-LTI1 onsemi XGS_Family_Rev4_Jun2020.pdf Description: XGS8MP, 24PORT, COLOR 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
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NOIX1SE8000B-LTI NOIX1SE8000B-LTI onsemi XGS_Family_Rev4_Jun2020.pdf Description: IC IMAGE SENSOR CMOS
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
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NOIX2SE8000B-LTI NOIX2SE8000B-LTI onsemi XGS_Family_Rev4_Jun2020.pdf Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
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NOIX2SE8000B-LTI1 NOIX2SE8000B-LTI1 onsemi XGS_Family_Rev4_Jun2020.pdf Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
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NRVS2J NRVS2J onsemi s2m-d.pdf Description: DIODE GEN PURP 600V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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CNY17F4SM CNY17F4SM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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STK531-345A-E onsemi Description: IC MOTOR DRIVER
Packaging: Tube
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STK531-392A-E onsemi Description: IC MOTOR DRIVER
Packaging: Tube
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STK531U36AA-E onsemi Description: MODULE IPM INVERTER 3PH 29SIP
Packaging: Bulk
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STK531U360A-E onsemi Description: IC MOTOR DRIVER
Packaging: Tube
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STK531U390A-E onsemi Description: IC MOTOR DRIVER
Packaging: Tube
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STK531-344A-E onsemi Description: IC MOTOR DRIVER
Packaging: Tube
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STK531U369C-E onsemi Description: IC IPM INVERTER SIP29
Packaging: Bulk
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LC87FC096AVUEF-3H LC87FC096AVUEF-3H onsemi ENA2150-D.PDF Description: 8-BIT MICROCONTROLLER WITH 98K-B
Packaging: Bulk
DigiKey Programmable: Not Verified
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FAM65CR51DZ1 FAM65CR51DZ1 onsemi FAM65CR51DZ1-D.PDF Description: MOSFET 2N-CH 650V 33A APMCD-B16
Packaging: Tube
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 160W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Supplier Device Package: APMCD-B16
Grade: Automotive
Qualification: AEC-Q101
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NXV08A170DB2 NXV08A170DB2 onsemi nxv08a170db2-d.pdf Description: MOSFET 2N-CH 80V 200A APM12-CBA
Packaging: Tray
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: APM12-CBA
Grade: Automotive
Qualification: AEC-Q100
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NXV08H250DT1 onsemi nxv08h250dt1-d.pdf Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
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NXV08H250DPT2 NXV08H250DPT2 onsemi nxv08h250dpt2-d.pdf Description: MOSFET 4N-CH 80V APM17-MFA
Packaging: Tube
Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MFA
Grade: Automotive
Qualification: AEC-Q101
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NXV08H300DT1 onsemi nxv08h300dt1-d.pdf Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
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MICROFC-30035-SMT-TR MICROFC-30035-SMT-TR onsemi microc-series-d.pdf Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFC-30035-SMT-TR MICROFC-30035-SMT-TR onsemi microc-series-d.pdf Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFC-30050-SMT-TR MICROFC-30050-SMT-TR onsemi microc-series-d.pdf Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFC-30050-SMT-TR MICROFC-30050-SMT-TR onsemi microc-series-d.pdf Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFJ-60035-TSV-TR MICROFJ-60035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFJ-60035-TSV-TR MICROFJ-60035-TSV-TR onsemi microj-series-d.pdf Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Cut Tape (CT)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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CS4172XDWFR16 CS4172XDWFR16 onsemi ONSMS05420-1.pdf?t.download=true&u=5oefqw Description: IC AIR CORE GAUGE DRIVER 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Air Core Gauge Driver
Supplier Device Package: 16-SO
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ADP4100JCPZ-REEL ADP4100JCPZ-REEL onsemi ADP4100-D.PDF Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
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MBRA140T3 MBRA140T3 onsemi mbra140t3-d.pdf description Description: DIODE SCHOTTKY 40V 1A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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NE521D NE521D onsemi ne521-d.pdf Description: IC COMPARATOR DUAL DIFF 14-SOIC
Packaging: Tube
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SZ1SMA5914BT3G SZ1SMA5914BT3G onsemi 1sma5913bt3-d.pdf Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
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SZ1SMA5914BT3G SZ1SMA5914BT3G onsemi 1sma5913bt3-d.pdf Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
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H11B1M H11B1M onsemi til113m-d.pdf Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 25µs, 18µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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SA64ALFG SA5.0A_Series.pdf
SA64ALFG
Hersteller: onsemi
Description: TVS DIODE 64VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
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NTD4959NHT4G NTD4959NH.pdf
NTD4959NHT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/58A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4810NT4G ntd4810n-d.pdf
NTD4810NT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12 V
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NTD4810NT4G ntd4810n-d.pdf
NTD4810NT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12 V
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NTD4810NHT4G ntd4810nh-d.pdf
NTD4810NHT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
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FDME820NZT-P
Hersteller: onsemi
Description: MOSFET N-CH 20V 9A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 700mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
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FMS6143CSX fms6143-d.pdf
FMS6143CSX
Hersteller: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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FMS6143ACSX FMS6143A-D.pdf
FMS6143ACSX
Hersteller: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NOIX1SE045KB-GTI image-sensors
Hersteller: onsemi
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Bulk
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
auf Bestellung 28 Stücke:
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AnzahlPrivatkunde
1+5660.09 EUR
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NOIX1SE045KB-GTI image-sensors
Hersteller: onsemi
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
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1+5263.36 EUR
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NOIX2SE045KB-GTI image-sensors
Hersteller: onsemi
Description: XGS45MP 12PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12
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1+5119.89 EUR
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NOIX1SN045KB-GTI image-sensors
NOIX1SN045KB-GTI
Hersteller: onsemi
Description: XGS45MP 24PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31.0
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1+4985.8 EUR
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NOIX2SN045KB-GTI image-sensors
NOIX2SN045KB-GTI
Hersteller: onsemi
Description: XGS45MP 12PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12.0
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1+4735.8 EUR
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NOIX0SN045KB-GTI image-sensors
NOIX0SN045KB-GTI
Hersteller: onsemi
Description: XGS45MP 48PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48.0
auf Bestellung 48 Stücke:
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1+5511.44 EUR
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NOIX0SE045KB-GTI image-sensors
Hersteller: onsemi
Description: XGS45MP 48PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48
auf Bestellung 12 Stücke:
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AnzahlPrivatkunde
1+6300.06 EUR
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BC548BRL1G BC546-D.PDF
BC548BRL1G
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
auf Bestellung 124805 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6045+0.092 EUR
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BC548BZL1G BC546-D.PDF
BC548BZL1G
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
auf Bestellung 80995 Stücke:
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6045+0.092 EUR
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BXL4004-1E EN9050-D.PDF
BXL4004-1E
Hersteller: onsemi
Description: BXL4004 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 20 V
auf Bestellung 500 Stücke:
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AnzahlPrivatkunde
186+2.95 EUR
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NTB5405NT4G ntb5405n-d.pdf
NTB5405NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 116A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
Produkt ist nicht verfügbar
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NVB5404NT4G ntb5404n-d.pdf
NVB5404NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 24A D2PAK
Packaging: Cut Tape (CT)
auf Bestellung 786 Stücke:
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3+7.27 EUR
10+4.76 EUR
100+3.33 EUR
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HCPL2631WV HCPL2631-D.PDF
HCPL2631WV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPN COLL 8MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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NB7L216MNEVB
NB7L216MNEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NB7L216MN
Packaging: Bulk
Function: Clock Buffer/Driver/Receiver/Translator
Type: Timing
Utilized IC / Part: NB7L1216
Supplied Contents: Board(s)
Primary Attributes: Input Up To 12Gb/s and 8.5GHz
Embedded: No
auf Bestellung 3 Stücke:
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1+918.86 EUR
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BC847CDXV6T5 BC847CDXV6T1-D.PDF
BC847CDXV6T5
Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
auf Bestellung 7755 Stücke:
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2597+0.21 EUR
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FODM217CR4 fodm214-d.pdf
FODM217CR4
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2975 Stücke:
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18+1.19 EUR
26+0.82 EUR
100+0.6 EUR
500+0.49 EUR
1000+0.45 EUR
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FSB70450 fsb70450-d.pdf
FSB70450
Hersteller: onsemi
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
Produkt ist nicht verfügbar
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FSB70450 fsb70450-d.pdf
FSB70450
Hersteller: onsemi
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
auf Bestellung 853 Stücke:
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2+19.73 EUR
10+13.59 EUR
100+10.66 EUR
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FSB70550 fsb70550-d.pdf
FSB70550
Hersteller: onsemi
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Voltage: 500 V
Current: 5.3 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 27-PowerLQFN Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FSB70550 fsb70550-d.pdf
FSB70550
Hersteller: onsemi
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Voltage: 500 V
Current: 5.3 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 27-PowerLQFN Module
Packaging: Cut Tape (CT)
auf Bestellung 703 Stücke:
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2+18.03 EUR
10+15.46 EUR
100+12.88 EUR
500+11.36 EUR
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NOIX1SE8000B-LTI1 XGS_Family_Rev4_Jun2020.pdf
NOIX1SE8000B-LTI1
Hersteller: onsemi
Description: XGS8MP, 24PORT, COLOR 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
auf Bestellung 2 Stücke:
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1+831.98 EUR
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NOIX1SE8000B-LTI XGS_Family_Rev4_Jun2020.pdf
NOIX1SE8000B-LTI
Hersteller: onsemi
Description: IC IMAGE SENSOR CMOS
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
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1+831.98 EUR
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NOIX2SE8000B-LTI XGS_Family_Rev4_Jun2020.pdf
NOIX2SE8000B-LTI
Hersteller: onsemi
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
auf Bestellung 24 Stücke:
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1+746.55 EUR
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NOIX2SE8000B-LTI1 XGS_Family_Rev4_Jun2020.pdf
NOIX2SE8000B-LTI1
Hersteller: onsemi
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Produkt ist nicht verfügbar
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NRVS2J s2m-d.pdf
NRVS2J
Hersteller: onsemi
Description: DIODE GEN PURP 600V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CNY17F4SM cny17f4m-d.pdf
CNY17F4SM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 40 Stücke:
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19+1.13 EUR
27+0.79 EUR
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STK531-345A-E
Hersteller: onsemi
Description: IC MOTOR DRIVER
Packaging: Tube
auf Bestellung 5310 Stücke:
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27+20.29 EUR
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STK531-392A-E
Hersteller: onsemi
Description: IC MOTOR DRIVER
Packaging: Tube
auf Bestellung 16599 Stücke:
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22+24.97 EUR
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STK531U36AA-E
Hersteller: onsemi
Description: MODULE IPM INVERTER 3PH 29SIP
Packaging: Bulk
auf Bestellung 884 Stücke:
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21+26.51 EUR
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STK531U360A-E
Hersteller: onsemi
Description: IC MOTOR DRIVER
Packaging: Tube
auf Bestellung 1243 Stücke:
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19+28.5 EUR
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STK531U390A-E
Hersteller: onsemi
Description: IC MOTOR DRIVER
Packaging: Tube
auf Bestellung 990 Stücke:
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AnzahlPrivatkunde
17+32.25 EUR
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STK531-344A-E
Hersteller: onsemi
Description: IC MOTOR DRIVER
Packaging: Tube
auf Bestellung 44 Stücke:
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AnzahlPrivatkunde
28+21.02 EUR
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STK531U369C-E
Hersteller: onsemi
Description: IC IPM INVERTER SIP29
Packaging: Bulk
auf Bestellung 44 Stücke:
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28+21.32 EUR
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LC87FC096AVUEF-3H ENA2150-D.PDF
LC87FC096AVUEF-3H
Hersteller: onsemi
Description: 8-BIT MICROCONTROLLER WITH 98K-B
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 300 Stücke:
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AnzahlPrivatkunde
154+3.75 EUR
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FAM65CR51DZ1 FAM65CR51DZ1-D.PDF
FAM65CR51DZ1
Hersteller: onsemi
Description: MOSFET 2N-CH 650V 33A APMCD-B16
Packaging: Tube
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 160W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Supplier Device Package: APMCD-B16
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 62 Stücke:
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NXV08A170DB2 nxv08a170db2-d.pdf
NXV08A170DB2
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 200A APM12-CBA
Packaging: Tray
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: APM12-CBA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 238 Stücke:
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NXV08H250DT1 nxv08h250dt1-d.pdf
Hersteller: onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160 Stücke:
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NXV08H250DPT2 nxv08h250dpt2-d.pdf
NXV08H250DPT2
Hersteller: onsemi
Description: MOSFET 4N-CH 80V APM17-MFA
Packaging: Tube
Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MFA
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXV08H300DT1 nxv08h300dt1-d.pdf
Hersteller: onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
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40+122.75 EUR
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MICROFC-30035-SMT-TR microc-series-d.pdf
MICROFC-30035-SMT-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Produkt ist nicht verfügbar
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MICROFC-30035-SMT-TR microc-series-d.pdf
MICROFC-30035-SMT-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 1121 Stücke:
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1+32.59 EUR
5+29.69 EUR
10+28.61 EUR
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100+25.62 EUR
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MICROFC-30050-SMT-TR microc-series-d.pdf
MICROFC-30050-SMT-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Produkt ist nicht verfügbar
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MICROFC-30050-SMT-TR microc-series-d.pdf
MICROFC-30050-SMT-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 2105 Stücke:
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1+30.1 EUR
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10+26.41 EUR
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MICROFJ-60035-TSV-TR microj-series-d.pdf
MICROFJ-60035-TSV-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
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MICROFJ-60035-TSV-TR microj-series-d.pdf
MICROFJ-60035-TSV-TR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Cut Tape (CT)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 6891 Stücke:
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1+58.5 EUR
5+53.63 EUR
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CS4172XDWFR16 ONSMS05420-1.pdf?t.download=true&u=5oefqw
CS4172XDWFR16
Hersteller: onsemi
Description: IC AIR CORE GAUGE DRIVER 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Air Core Gauge Driver
Supplier Device Package: 16-SO
auf Bestellung 2899 Stücke:
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71+7.79 EUR
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ADP4100JCPZ-REEL ADP4100-D.PDF
ADP4100JCPZ-REEL
Hersteller: onsemi
Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
auf Bestellung 181879 Stücke:
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159+3.46 EUR
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MBRA140T3 description mbra140t3-d.pdf
MBRA140T3
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NE521D ne521-d.pdf
NE521D
Hersteller: onsemi
Description: IC COMPARATOR DUAL DIFF 14-SOIC
Packaging: Tube
Produkt ist nicht verfügbar
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SZ1SMA5914BT3G 1sma5913bt3-d.pdf
SZ1SMA5914BT3G
Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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5000+0.5 EUR
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SZ1SMA5914BT3G 1sma5913bt3-d.pdf
SZ1SMA5914BT3G
Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 5008 Stücke:
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10+2.12 EUR
16+1.32 EUR
50+0.98 EUR
100+0.87 EUR
500+0.67 EUR
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H11B1M til113m-d.pdf
H11B1M
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 25µs, 18µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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