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NP2600SBT3G NP2600SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 220V 80A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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NP1800SBT3G NP1800SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 170V 80A DO214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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NP2600SAMCT3G NP2600SAMCT3G onsemi NPMC%20Series.pdf Description: THYRISTOR 220V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 23pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
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NP1800SBMCT3G NP1800SBMCT3G onsemi NPMC%20Series.pdf Description: THYRISTOR 170V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 29pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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NP2600SCT3G NP2600SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 220V 100A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 81pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
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NP1800SCT3G NP1800SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 170V 100A DO214AA
Packaging: Bulk
Capacitance: 99pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
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NP2600SC1T3G NP2600SC1T3G onsemi NPSERIES-D.pdf Description: THYRISTOR 220V 100A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 30pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 270 mA
Current - Peak Pulse (10/1000µs): 100 A
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1N5407G 1N5407G onsemi 1N5400-D.PDF Description: DIODE STANDARD 800V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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2SB1122S-TD-E 2SB1122S-TD-E onsemi 2sb1122-d.pdf Description: TRANS PNP 50V 1A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SB1143S 2SB1143S onsemi 2SB1143%2C2SD1683.pdf Description: TRANS PNP 50V 4A TO-126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2SB1143T 2SB1143T onsemi 2SB1143%2C2SD1683.pdf Description: TRANS PNP 50V 4A TO-126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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ESDM3033N2T5G ESDM3033N2T5G onsemi esdm3033-d.pdf Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
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ESDM3033N2T5G ESDM3033N2T5G onsemi esdm3033-d.pdf Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
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SZESD7551N2T5G SZESD7551N2T5G onsemi ESD7551-D.PDF Description: TVS DIODE 3.3VWM 13VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 0.22pF @ 1GHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SZESD7551N2T5G SZESD7551N2T5G onsemi ESD7551-D.PDF Description: TVS DIODE 3.3VWM 13VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 0.22pF @ 1GHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SLJ74HC74ADTR2G onsemi Description: SLJ74HC74ADTR2G
Packaging: Bulk
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SLV74HC74ADTR2G onsemi Description: SLV74HC74ADTR2G
Packaging: Bulk
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NCP171AMX165160TCG NCP171AMX165160TCG onsemi ncp171-d.pdf Description: IC REG LINEAR 1.65V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.65V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NCP171AMX165160TCG NCP171AMX165160TCG onsemi ncp171-d.pdf Description: IC REG LINEAR 1.65V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.65V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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NDD60N745U1-35G NDD60N745U1-35G onsemi NDD60N745U1.pdf Description: MOSFET N-CH 600V 6.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
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NDD60N745U1T4G NDD60N745U1T4G onsemi NDD60N745U1.pdf Description: MOSFET N-CH 600V 6.6A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
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FDMC86244-L701 onsemi fdmc86244-d.pdf Description: FET 150V 134.0 MOHM MLP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
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LB1860M-TLM-E LB1860M-TLM-E onsemi LB1860%2C61%28M%29.pdf Description: IC MOTOR DRIVER 6.4V-7V 14MFPS
Packaging: Tape & Reel (TR)
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6.4V ~ 7V
Applications: DC Motors, General Purpose
Technology: Bipolar
Voltage - Load: 12V, 24V
Supplier Device Package: 14-MFPS
Motor Type - AC, DC: Brushless DC (BLDC)
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74ACT10PC 74ACT10PC onsemi 74AC%28ACT%2910.pdf Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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74ACT10MTCX 74ACT10MTCX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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74ACT10SCX 74ACT10SCX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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MC74ACT11DR2G MC74ACT11DR2G onsemi mc74ac11-d.pdf Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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MC74ACT11NG MC74ACT11NG onsemi mc74ac11-d.pdf Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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MC74ACT11MELG MC74ACT11MELG onsemi mc74ac11-d.pdf Description: IC GATE AND 3CH 3-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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NCV2002SN1T1G NCV2002SN1T1G onsemi ncs2002-d.pdf Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Qualification: AEC-Q100
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6000+0.89 EUR
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NCV2002SN1T1G NCV2002SN1T1G onsemi ncs2002-d.pdf Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Qualification: AEC-Q100
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10+2.31 EUR
11+2.06 EUR
25+1.95 EUR
100+1.5 EUR
250+1.32 EUR
500+1.25 EUR
1000+0.98 EUR
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RFP30P05 RFP30P05 onsemi RFG30P05_RFP30P05_RF1S30P05SM.pdf Description: MOSFET P-CH 50V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
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BDX53C BDX53C onsemi BDX53C-D.pdf Description: TRANS NPN DARL 100V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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TL431BIP TL431BIP onsemi TL431%2CA%2CB%2CNCV431A.pdf Description: IC VREF SHUNT ADJ 0.4% 8DIP
Tolerance: ±0.4%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TL431BIP TL431BIP onsemi TL431%2CA%2CB%2CNCV431A.pdf Description: IC VREF SHUNT ADJ 0.4% 8DIP
Tolerance: ±0.4%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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NSBC124EPDP6T5G NSBC124EPDP6T5G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
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NSBC124XPDXV6T1G NSBC124XPDXV6T1G onsemi dtc124xp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSVBC124XDXV6T1G NSVBC124XDXV6T1G onsemi dtc124xd-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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NSVBC124XPDXV6T1G NSVBC124XPDXV6T1G onsemi dtc124xp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NBC12429AMNR4G NBC12429AMNR4G onsemi nbc12429-d.pdf Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 400MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBC12429AMNR4G NBC12429AMNR4G onsemi nbc12429-d.pdf Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 400MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBC12430AMNG NBC12430AMNG onsemi nbc12430-d.pdf Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 800MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NSBC124EDP6T5G NSBC124EDP6T5G onsemi dtc124ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
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NSBC124XDXV6T1 NSBC124XDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124EPDXV6T5G NSBC124EPDXV6T5G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124EDXV6T5G NSBC124EDXV6T5G onsemi dtc124ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124XF3T5G NSBC124XF3T5G onsemi dtc124x-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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NCP301LSN39T1G NCP301LSN39T1G onsemi ncp300-d.pdf Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.9V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
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NCV1009DR2 NCV1009DR2 onsemi ncv1009-d.pdf Description: IC VREF SHUNT PREC 2.5V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Reference Type: Shunt
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MC74LCX16240DTRG MC74LCX16240DTRG onsemi mc74lcx16240-d.pdf Description: IC LINE DRVR 48-TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Line Driver, Inverting
Number of Bits per Element: 4
Supplier Device Package: 48-TSSOP
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NVH4L018N075SC1 NVH4L018N075SC1 onsemi nvh4l018n075sc1-d.pdf Description: SIC MOS TO247-4L 750V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V
Qualification: AEC-Q101
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FDPF5N50T FDPF5N50T onsemi fdpf5n50t-d.pdf Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
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FFSD0665B FFSD0665B onsemi ffsd0665b-d.pdf Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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FFSD0665B FFSD0665B onsemi ffsd0665b-d.pdf Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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FFSD0665B-F085 FFSD0665B-F085 onsemi ffsd0665b-f085-d.pdf Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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FFSD0665B-F085 FFSD0665B-F085 onsemi ffsd0665b-f085-d.pdf Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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10+3.96 EUR
100+2.74 EUR
500+2.23 EUR
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FFSD0665A FFSD0665A onsemi ffsd0665a-d.pdf Description: DIODE SIL CARBIDE 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSD0665A FFSD0665A onsemi ffsd0665a-d.pdf Description: DIODE SIL CARBIDE 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 39759 Stücke:
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100+3 EUR
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1000+2.39 EUR
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1N5373B 1N5373B onsemi 1n5333b-d.pdf Description: DIODE ZENER 68V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 51.7 V
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1N5373B 1N5373B onsemi 1n5333b-d.pdf Description: DIODE ZENER 68V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 51.7 V
Produkt ist nicht verfügbar
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NP2600SBT3G NPSERIES-D.pdf
NP2600SBT3G
Hersteller: onsemi
Description: THYRISTOR 220V 80A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Produkt ist nicht verfügbar
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NP1800SBT3G NPSERIES-D.pdf
NP1800SBT3G
Hersteller: onsemi
Description: THYRISTOR 170V 80A DO214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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NP2600SAMCT3G NPMC%20Series.pdf
NP2600SAMCT3G
Hersteller: onsemi
Description: THYRISTOR 220V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 23pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Produkt ist nicht verfügbar
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NP1800SBMCT3G NPMC%20Series.pdf
NP1800SBMCT3G
Hersteller: onsemi
Description: THYRISTOR 170V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 29pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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NP2600SCT3G NPSERIES-D.pdf
NP2600SCT3G
Hersteller: onsemi
Description: THYRISTOR 220V 100A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 81pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Produkt ist nicht verfügbar
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NP1800SCT3G NPSERIES-D.pdf
NP1800SCT3G
Hersteller: onsemi
Description: THYRISTOR 170V 100A DO214AA
Packaging: Bulk
Capacitance: 99pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
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NP2600SC1T3G NPSERIES-D.pdf
NP2600SC1T3G
Hersteller: onsemi
Description: THYRISTOR 220V 100A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 30pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 270 mA
Current - Peak Pulse (10/1000µs): 100 A
Produkt ist nicht verfügbar
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1N5407G 1N5400-D.PDF
1N5407G
Hersteller: onsemi
Description: DIODE STANDARD 800V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 33961 Stücke:
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18+1.21 EUR
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2SB1122S-TD-E 2sb1122-d.pdf
2SB1122S-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 1A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SB1143S 2SB1143%2C2SD1683.pdf
2SB1143S
Hersteller: onsemi
Description: TRANS PNP 50V 4A TO-126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2SB1143T 2SB1143%2C2SD1683.pdf
2SB1143T
Hersteller: onsemi
Description: TRANS PNP 50V 4A TO-126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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586+0.93 EUR
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ESDM3033N2T5G esdm3033-d.pdf
ESDM3033N2T5G
Hersteller: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESDM3033N2T5G esdm3033-d.pdf
ESDM3033N2T5G
Hersteller: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
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38+0.57 EUR
45+0.46 EUR
54+0.39 EUR
100+0.21 EUR
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SZESD7551N2T5G ESD7551-D.PDF
SZESD7551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 13VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 0.22pF @ 1GHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZESD7551N2T5G ESD7551-D.PDF
SZESD7551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 13VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 0.22pF @ 1GHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7750 Stücke:
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28+0.77 EUR
45+0.46 EUR
56+0.38 EUR
100+0.29 EUR
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500+0.2 EUR
1000+0.18 EUR
2500+0.15 EUR
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SLJ74HC74ADTR2G
Hersteller: onsemi
Description: SLJ74HC74ADTR2G
Packaging: Bulk
Produkt ist nicht verfügbar
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SLV74HC74ADTR2G
Hersteller: onsemi
Description: SLV74HC74ADTR2G
Packaging: Bulk
Produkt ist nicht verfügbar
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NCP171AMX165160TCG ncp171-d.pdf
NCP171AMX165160TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.65V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.65V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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5000+0.79 EUR
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NCP171AMX165160TCG ncp171-d.pdf
NCP171AMX165160TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.65V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.65V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 49997 Stücke:
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11+2.06 EUR
25+1.73 EUR
100+1.34 EUR
250+1.17 EUR
500+1.05 EUR
1000+0.95 EUR
2500+0.86 EUR
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NDD60N745U1-35G NDD60N745U1.pdf
NDD60N745U1-35G
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
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NDD60N745U1T4G NDD60N745U1.pdf
NDD60N745U1T4G
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.6A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
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271+1.98 EUR
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FDMC86244-L701 fdmc86244-d.pdf
Hersteller: onsemi
Description: FET 150V 134.0 MOHM MLP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Produkt ist nicht verfügbar
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LB1860M-TLM-E LB1860%2C61%28M%29.pdf
LB1860M-TLM-E
Hersteller: onsemi
Description: IC MOTOR DRIVER 6.4V-7V 14MFPS
Packaging: Tape & Reel (TR)
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -30°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6.4V ~ 7V
Applications: DC Motors, General Purpose
Technology: Bipolar
Voltage - Load: 12V, 24V
Supplier Device Package: 14-MFPS
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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74ACT10PC 74AC%28ACT%2910.pdf
74ACT10PC
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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74ACT10MTCX 74AC10%2C74ACT10.pdf
74ACT10MTCX
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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74ACT10SCX 74AC10%2C74ACT10.pdf
74ACT10SCX
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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MC74ACT11DR2G mc74ac11-d.pdf
MC74ACT11DR2G
Hersteller: onsemi
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
auf Bestellung 18019 Stücke:
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MC74ACT11NG mc74ac11-d.pdf
MC74ACT11NG
Hersteller: onsemi
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
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MC74ACT11MELG mc74ac11-d.pdf
MC74ACT11MELG
Hersteller: onsemi
Description: IC GATE AND 3CH 3-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9.5ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
auf Bestellung 25295 Stücke:
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AnzahlPrivatkunde
807+0.71 EUR
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NCV2002SN1T1G ncs2002-d.pdf
NCV2002SN1T1G
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Qualification: AEC-Q100
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AnzahlPrivatkunde
3000+0.93 EUR
6000+0.89 EUR
15000+0.87 EUR
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NCV2002SN1T1G ncs2002-d.pdf
NCV2002SN1T1G
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 6-TSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 128 mA
Voltage - Supply Span (Min): 0.9 V
Voltage - Supply Span (Max): 7 V
Qualification: AEC-Q100
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
11+2.06 EUR
25+1.95 EUR
100+1.5 EUR
250+1.32 EUR
500+1.25 EUR
1000+0.98 EUR
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RFP30P05 RFG30P05_RFP30P05_RF1S30P05SM.pdf
RFP30P05
Hersteller: onsemi
Description: MOSFET P-CH 50V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
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BDX53C BDX53C-D.pdf
BDX53C
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Produkt ist nicht verfügbar
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TL431BIP TL431%2CA%2CB%2CNCV431A.pdf
TL431BIP
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Tolerance: ±0.4%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 5750 Stücke:
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748+0.74 EUR
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TL431BIP TL431%2CA%2CB%2CNCV431A.pdf
TL431BIP
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Tolerance: ±0.4%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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NSBC124EPDP6T5G dtc124ep-d.pdf
NSBC124EPDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
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NSBC124XPDXV6T1G dtc124xp-d.pdf
NSBC124XPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSVBC124XDXV6T1G dtc124xd-d.pdf
NSVBC124XDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.14 EUR
8000+0.13 EUR
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NSVBC124XPDXV6T1G dtc124xp-d.pdf
NSVBC124XPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NBC12429AMNR4G nbc12429-d.pdf
NBC12429AMNR4G
Hersteller: onsemi
Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 400MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBC12429AMNR4G nbc12429-d.pdf
NBC12429AMNR4G
Hersteller: onsemi
Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 400MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBC12430AMNG nbc12430-d.pdf
NBC12430AMNG
Hersteller: onsemi
Description: IC PLL CLOCK GENERATOR 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: PECL
Frequency - Max: 800MHz
Type: PLL Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 32-QFN (5x5)
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.06 EUR
10+25.79 EUR
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NSBC124EDP6T5G dtc124ed-d.pdf
NSBC124EDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
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NSBC124XDXV6T1 NSBC114EDXV6Tx.pdf
NSBC124XDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124EPDXV6T5G dtc124ep-d.pdf
NSBC124EPDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124EDXV6T5G dtc124ed-d.pdf
NSBC124EDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC124XF3T5G dtc124x-d.pdf
NSBC124XF3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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NCP301LSN39T1G ncp300-d.pdf
NCP301LSN39T1G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 3.9V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
auf Bestellung 70609 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1649+0.35 EUR
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NCV1009DR2 ncv1009-d.pdf
NCV1009DR2
Hersteller: onsemi
Description: IC VREF SHUNT PREC 2.5V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Reference Type: Shunt
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MC74LCX16240DTRG mc74lcx16240-d.pdf
MC74LCX16240DTRG
Hersteller: onsemi
Description: IC LINE DRVR 48-TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Line Driver, Inverting
Number of Bits per Element: 4
Supplier Device Package: 48-TSSOP
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
466+1.14 EUR
Mindestbestellmenge: 466 Stücke
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NVH4L018N075SC1 nvh4l018n075sc1-d.pdf
NVH4L018N075SC1
Hersteller: onsemi
Description: SIC MOS TO247-4L 750V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V
Qualification: AEC-Q101
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+67.88 EUR
30+50.63 EUR
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FDPF5N50T fdpf5n50t-d.pdf
FDPF5N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
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FFSD0665B ffsd0665b-d.pdf
FFSD0665B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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FFSD0665B ffsd0665b-d.pdf
FFSD0665B
Hersteller: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 879 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.51 EUR
10+3.56 EUR
100+2.45 EUR
500+1.98 EUR
Mindestbestellmenge: 4 Stücke
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FFSD0665B-F085 ffsd0665b-f085-d.pdf
FFSD0665B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FFSD0665B-F085 ffsd0665b-f085-d.pdf
FFSD0665B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 9.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Current - Average Rectified (Io): 9.1A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.09 EUR
10+3.96 EUR
100+2.74 EUR
500+2.23 EUR
1000+2.05 EUR
Mindestbestellmenge: 4 Stücke
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FFSD0665A ffsd0665a-d.pdf
FFSD0665A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.07 EUR
5000+1.96 EUR
Mindestbestellmenge: 2500 Stücke
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FFSD0665A ffsd0665a-d.pdf
FFSD0665A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 39759 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.59 EUR
10+4.31 EUR
100+3 EUR
500+2.44 EUR
1000+2.39 EUR
Mindestbestellmenge: 4 Stücke
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1N5373B 1n5333b-d.pdf
1N5373B
Hersteller: onsemi
Description: DIODE ZENER 68V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 51.7 V
auf Bestellung 4238 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1817+0.31 EUR
Mindestbestellmenge: 1817 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5373B 1n5333b-d.pdf
1N5373B
Hersteller: onsemi
Description: DIODE ZENER 68V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 51.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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