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74LVT244MTCX 74LVT244MTCX onsemi 74lvth244-d.pdf Description: IC BUF NON-INVERT 3.6V 20TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 21607 Stücke:
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9+2.53 EUR
10+2.28 EUR
25+2.15 EUR
100+1.73 EUR
250+1.51 EUR
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74LVT244WMX 74LVT244WMX onsemi 74lvth244-d.pdf Description: IC BUF NON-INVERT 3.6V 20SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 20-SOIC
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Produkt ist nicht verfügbar
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74LVTH125MTCX 74LVTH125MTCX onsemi FAIRS25787-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 3.6V 14TSSOP
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3094 Stücke:
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10+2.28 EUR
11+2.03 EUR
25+1.93 EUR
100+1.49 EUR
250+1.31 EUR
500+1.24 EUR
1000+0.96 EUR
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74LVTH125MX 74LVTH125MX onsemi FAIRS25787-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 3.6V 14SOIC
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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74LVTH162244MTX 74LVTH162244MTX onsemi 74lvth162244-d.pdf Description: IC BUF NON-INVERT 3.6V 48TSSOP
Part Status: Active
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 12mA, 12mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1051 Stücke:
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3+8.23 EUR
10+7.39 EUR
25+6.99 EUR
100+6.06 EUR
250+5.75 EUR
500+5.15 EUR
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74LVX244MTCX 74LVX244MTCX onsemi ONSM-S-A0003585048-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 3.6V 20TSSOP
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
auf Bestellung 4925 Stücke:
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8+2.78 EUR
13+1.7 EUR
25+1.43 EUR
100+1.11 EUR
250+0.95 EUR
500+0.84 EUR
1000+0.77 EUR
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74LVX245MTCX 74LVX245MTCX onsemi 74LVX245-D.pdf Description: IC TXRX 2V/3.6V 20-TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1061 Stücke:
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15+1.44 EUR
21+1.04 EUR
25+0.93 EUR
100+0.82 EUR
250+0.76 EUR
500+0.73 EUR
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74LVX4245MTCX 74LVX4245MTCX onsemi 74LVX4245-D.pdf Description: IC TXRX NON-INVERT 5.5V 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V, 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 24mA, 24mA
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
auf Bestellung 22649 Stücke:
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11+2.01 EUR
15+1.45 EUR
25+1.32 EUR
100+1.15 EUR
250+1.08 EUR
500+1.05 EUR
1000+0.99 EUR
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74LVX74MTCX 74LVX74MTCX onsemi 74lvx74-d.pdf Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 13.2ns @ 3.3V, 50pF
Supplier Device Package: 14-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 85 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3675 Stücke:
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11+1.99 EUR
18+1.2 EUR
25+1 EUR
100+0.76 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.52 EUR
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74VHC00MTCX 74VHC00MTCX onsemi 74VHC00-D.PDF Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 3342 Stücke:
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32+0.67 EUR
47+0.45 EUR
52+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.3 EUR
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74VHC04MTCX 74VHC04MTCX onsemi 74VHC04-D.PDF Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 93654 Stücke:
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34+0.63 EUR
49+0.44 EUR
55+0.39 EUR
100+0.33 EUR
250+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
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74VHC123AMTCX 74VHC123AMTCX onsemi 74VHC123A-D.pdf Description: IC MMV 2-CIR 8.1-NS 16-TSSOP
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOP
Schmitt Trigger Input: Yes
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Propagation Delay: 8.1 ns
Operating Temperature: -40°C ~ 85°C
Logic Type: Monostable
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 127277 Stücke:
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20+1.07 EUR
28+0.75 EUR
32+0.68 EUR
100+0.58 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.51 EUR
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74VHC125MTCX 74VHC125MTCX onsemi 74VHC125-D.PDF description Description: IC BUFF 2V/5.5V 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
48+0.44 EUR
54+0.39 EUR
100+0.35 EUR
250+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
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74VHC14MTCX 74VHC14MTCX onsemi 74VHC14-D.PDF description Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 26314 Stücke:
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30+0.71 EUR
43+0.49 EUR
48+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
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74VHC244MTCX 74VHC244MTCX onsemi 74VHC244-D.pdf Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1757 Stücke:
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15+1.4 EUR
21+1.01 EUR
25+0.92 EUR
100+0.8 EUR
250+0.75 EUR
500+0.71 EUR
1000+0.7 EUR
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74VHC273MTCX 74VHC273MTCX onsemi 74vhc273-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.73 EUR
13+1.64 EUR
25+1.38 EUR
100+1.08 EUR
250+0.94 EUR
500+0.86 EUR
1000+0.79 EUR
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74VHC32MTCX 74VHC32MTCX onsemi 74VHC32-D.pdf Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 1613 Stücke:
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25+0.83 EUR
36+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
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74VHC573MTCX 74VHC573MTCX onsemi 74vhc573-d.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 4.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Part Status: Active
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.34 EUR
23+0.95 EUR
25+0.86 EUR
100+0.75 EUR
250+0.69 EUR
500+0.67 EUR
1000+0.65 EUR
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74VHC595MTCX 74VHC595MTCX onsemi 74VHC595-D.PDF Description: IC SR TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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20+1.05 EUR
29+0.74 EUR
32+0.65 EUR
100+0.57 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.5 EUR
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74VHC74MTCX 74VHC74MTCX onsemi 74VHC74-D.PDF Description: IC FF D-TYPE 2-ELE 1-BIT
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.3ns @ 5V, 50pF
Supplier Device Package: 14-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 115 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
auf Bestellung 7144 Stücke:
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29+0.74 EUR
42+0.51 EUR
47+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
1000+0.33 EUR
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74VHCT244AMTCX 74VHCT244AMTCX onsemi 74VHCT244A-D.pdf Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 42621 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.36 EUR
22+0.96 EUR
25+0.87 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
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74VHCT245AMTCX 74VHCT245AMTCX onsemi 74VHCT245A-D.PDF Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
21+1.04 EUR
25+0.93 EUR
100+0.82 EUR
250+0.76 EUR
500+0.73 EUR
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BAS31 BAS31 onsemi BAS31-D.PDF Description: DIODE ARR GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.52 EUR
56+0.38 EUR
100+0.33 EUR
500+0.25 EUR
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BC846BMTF BC846BMTF onsemi BC846-BC850.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BCV27 BCV27 onsemi BCV27-D.PDF Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
auf Bestellung 9317 Stücke:
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BSR14 BSR14 onsemi BSR14-D.pdf Description: TRANS NPN 40V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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FDB045AN08A0 FDB045AN08A0 onsemi FDB045AN08A0-D.PDF Description: MOSFET N-CH 75V 19A/90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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FDB3632 FDB3632 onsemi FDP3632-D.PDF Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
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FDC5612 FDC5612 onsemi FDC5612-D.PDF Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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FDC5614P FDC5614P onsemi FDC5614P-D.PDF Description: MOSFET P-CH 60V 3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
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FDC604P FDC604P onsemi fdc604p-d.pdf Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6301N FDC6301N onsemi FDC6301N-D.PDF Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6303N FDC6303N onsemi fdc6303n-d.pdf Description: MOSFET 2N-CH 25V 0.68A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 680mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6305N FDC6305N onsemi FDC6305N-D.PDF Description: MOSFET 2N-CH 20V 2.7A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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FDC6306P FDC6306P onsemi FDC6306P-D.pdf Description: MOSFET 2P-CH 20V 1.9A SSOT6
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6333C FDC6333C onsemi FDC6333C-D.PDF Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
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FDC634P FDC634P onsemi fdc634p-d.pdf Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC653N FDC653N onsemi fdc653n-d.pdf Description: MOSFET N-CH 30V 5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6561AN FDC6561AN onsemi fdc6561an-d.pdf Description: MOSFET 2N-CH 30V 2.5A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDD6690A FDD6690A onsemi fdd6690a-d.pdf Description: MOSFET N-CH 30V 12A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDG6301N FDG6301N onsemi fdg6301n-d.pdf Description: MOSFET 2N-CH 25V 0.22A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6303N FDG6303N onsemi fdg6303n-d.pdf Description: MOSFET 2N-CH 25V 500MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6304P FDG6304P onsemi fdg6304p-d.pdf Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6322C FDG6322C onsemi fdg6322c-d.pdf Description: MOSFET N/P-CH 25V 0.22A SC88
Part Status: Active
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6323L FDG6323L onsemi fdg6323l-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC88
Input Type: Non-Inverting
Rds On (Typ): 410mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Ratio - Input:Output: 1:1
Current - Output (Max): 600mA
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
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FDLL300 FDLL300 onsemi ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 125V 200MA LL34
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FDN306P FDN306P onsemi FDN306P-D.pdf Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 16587 Stücke:
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FDN336P FDN336P onsemi fdn336p-d.pdf Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 93032 Stücke:
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FDN339AN FDN339AN onsemi FDN339AN-D.PDF Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
auf Bestellung 17791 Stücke:
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FDN357N FDN357N onsemi fdn357n-d.pdf Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
auf Bestellung 35427 Stücke:
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FDN358P FDN358P onsemi FDN358P-D.PDF Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
Produkt ist nicht verfügbar
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FDN359AN FDN359AN onsemi fdn359an-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 15044 Stücke:
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FDN360P FDN360P onsemi fdn360p-d.pdf Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 7698 Stücke:
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17+1.26 EUR
27+0.79 EUR
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FDN5618P FDN5618P onsemi fdn5618p-d.pdf Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 42901 Stücke:
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24+0.89 EUR
50+0.65 EUR
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FDN5630 FDN5630 onsemi fdn5630-d.pdf Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 20407 Stücke:
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FDS2572 FDS2572 onsemi FAIRS45105-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 4.9A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
auf Bestellung 14221 Stücke:
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FDS3672 FDS3672 onsemi fds3672-d.pdf Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 46375 Stücke:
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FDS4465 FDS4465 onsemi fds4465-d.pdf Description: MOSFET P-CH 20V 13.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 7431 Stücke:
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FDS4935A FDS4935A onsemi fds4935a-d.pdf Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS5670 FDS5670 onsemi fds5670-d.pdf Description: MOSFET N-CH 60V 10A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 20147 Stücke:
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74LVT244MTCX 74lvth244-d.pdf
74LVT244MTCX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 21607 Stücke:
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9+2.53 EUR
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74LVT244WMX 74lvth244-d.pdf
74LVT244WMX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 20-SOIC
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Produkt ist nicht verfügbar
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74LVTH125MTCX FAIRS25787-1.pdf?t.download=true&u=5oefqw
74LVTH125MTCX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3094 Stücke:
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10+2.28 EUR
11+2.03 EUR
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74LVTH125MX FAIRS25787-1.pdf?t.download=true&u=5oefqw
74LVTH125MX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14SOIC
Current - Output High, Low: 32mA, 64mA
Number of Bits per Element: 1
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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74LVTH162244MTX 74lvth162244-d.pdf
74LVTH162244MTX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Part Status: Active
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 12mA, 12mA
Number of Bits per Element: 4
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1051 Stücke:
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3+8.23 EUR
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74LVX244MTCX ONSM-S-A0003585048-1.pdf?t.download=true&u=5oefqw
74LVX244MTCX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
auf Bestellung 4925 Stücke:
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8+2.78 EUR
13+1.7 EUR
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74LVX245MTCX 74LVX245-D.pdf
74LVX245MTCX
Hersteller: onsemi
Description: IC TXRX 2V/3.6V 20-TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1061 Stücke:
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AnzahlPrivatkunde
15+1.44 EUR
21+1.04 EUR
25+0.93 EUR
100+0.82 EUR
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500+0.73 EUR
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74LVX4245MTCX 74LVX4245-D.pdf
74LVX4245MTCX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V, 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 24mA, 24mA
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
auf Bestellung 22649 Stücke:
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11+2.01 EUR
15+1.45 EUR
25+1.32 EUR
100+1.15 EUR
250+1.08 EUR
500+1.05 EUR
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74LVX74MTCX 74lvx74-d.pdf
74LVX74MTCX
Hersteller: onsemi
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 13.2ns @ 3.3V, 50pF
Supplier Device Package: 14-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 85 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3675 Stücke:
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11+1.99 EUR
18+1.2 EUR
25+1 EUR
100+0.76 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.52 EUR
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74VHC00MTCX 74VHC00-D.PDF
74VHC00MTCX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 3342 Stücke:
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32+0.67 EUR
47+0.45 EUR
52+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.3 EUR
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74VHC04MTCX 74VHC04-D.PDF
74VHC04MTCX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 93654 Stücke:
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34+0.63 EUR
49+0.44 EUR
55+0.39 EUR
100+0.33 EUR
250+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
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74VHC123AMTCX 74VHC123A-D.pdf
74VHC123AMTCX
Hersteller: onsemi
Description: IC MMV 2-CIR 8.1-NS 16-TSSOP
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOP
Schmitt Trigger Input: Yes
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Propagation Delay: 8.1 ns
Operating Temperature: -40°C ~ 85°C
Logic Type: Monostable
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 127277 Stücke:
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20+1.07 EUR
28+0.75 EUR
32+0.68 EUR
100+0.58 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.51 EUR
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74VHC125MTCX description 74VHC125-D.PDF
74VHC125MTCX
Hersteller: onsemi
Description: IC BUFF 2V/5.5V 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
48+0.44 EUR
54+0.39 EUR
100+0.35 EUR
250+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
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74VHC14MTCX description 74VHC14-D.PDF
74VHC14MTCX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 26314 Stücke:
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30+0.71 EUR
43+0.49 EUR
48+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
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74VHC244MTCX 74VHC244-D.pdf
74VHC244MTCX
Hersteller: onsemi
Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1757 Stücke:
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15+1.4 EUR
21+1.01 EUR
25+0.92 EUR
100+0.8 EUR
250+0.75 EUR
500+0.71 EUR
1000+0.7 EUR
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74VHC273MTCX 74vhc273-d.pdf
74VHC273MTCX
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Output Type: Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 110 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 4 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
auf Bestellung 1700 Stücke:
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8+2.73 EUR
13+1.64 EUR
25+1.38 EUR
100+1.08 EUR
250+0.94 EUR
500+0.86 EUR
1000+0.79 EUR
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74VHC32MTCX 74VHC32-D.pdf
74VHC32MTCX
Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 1613 Stücke:
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25+0.83 EUR
36+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
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74VHC573MTCX 74vhc573-d.pdf
74VHC573MTCX
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 4.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Part Status: Active
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
23+0.95 EUR
25+0.86 EUR
100+0.75 EUR
250+0.69 EUR
500+0.67 EUR
1000+0.65 EUR
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74VHC595MTCX 74VHC595-D.PDF
74VHC595MTCX
Hersteller: onsemi
Description: IC SR TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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20+1.05 EUR
29+0.74 EUR
32+0.65 EUR
100+0.57 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.5 EUR
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74VHC74MTCX 74VHC74-D.PDF
74VHC74MTCX
Hersteller: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.3ns @ 5V, 50pF
Supplier Device Package: 14-TSSOP
Input Capacitance: 4 pF
Clock Frequency: 115 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
auf Bestellung 7144 Stücke:
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AnzahlPrivatkunde
29+0.74 EUR
42+0.51 EUR
47+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
1000+0.33 EUR
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74VHCT244AMTCX 74VHCT244A-D.pdf
74VHCT244AMTCX
Hersteller: onsemi
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 42621 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
22+0.96 EUR
25+0.87 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
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74VHCT245AMTCX 74VHCT245A-D.PDF
74VHCT245AMTCX
Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 3461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
21+1.04 EUR
25+0.93 EUR
100+0.82 EUR
250+0.76 EUR
500+0.73 EUR
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BAS31 BAS31-D.PDF
BAS31
Hersteller: onsemi
Description: DIODE ARR GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
auf Bestellung 87000 Stücke:
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25+0.83 EUR
41+0.52 EUR
56+0.38 EUR
100+0.33 EUR
500+0.25 EUR
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BC846BMTF BC846-BC850.pdf
BC846BMTF
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BCV27 BCV27-D.PDF
BCV27
Hersteller: onsemi
Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
auf Bestellung 9317 Stücke:
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AnzahlPrivatkunde
44+0.48 EUR
72+0.29 EUR
116+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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BSR14 BSR14-D.pdf
BSR14
Hersteller: onsemi
Description: TRANS NPN 40V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 24000 Stücke:
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24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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FDB045AN08A0 FDB045AN08A0-D.PDF
FDB045AN08A0
Hersteller: onsemi
Description: MOSFET N-CH 75V 19A/90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 294 Stücke:
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AnzahlPrivatkunde
3+9.12 EUR
10+6.02 EUR
100+4.27 EUR
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FDB3632 FDP3632-D.PDF
FDB3632
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 242 Stücke:
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AnzahlPrivatkunde
3+8.4 EUR
10+5.53 EUR
100+3.9 EUR
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FDC5612 FDC5612-D.PDF
FDC5612
Hersteller: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
17+1.25 EUR
50+0.93 EUR
100+0.82 EUR
500+0.63 EUR
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FDC5614P FDC5614P-D.PDF
FDC5614P
Hersteller: onsemi
Description: MOSFET P-CH 60V 3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
auf Bestellung 223327 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.55 EUR
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FDC604P fdc604p-d.pdf
FDC604P
Hersteller: onsemi
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 8885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
22+0.98 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
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FDC6301N FDC6301N-D.PDF
FDC6301N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 37403 Stücke:
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AnzahlPrivatkunde
18+1.18 EUR
30+0.73 EUR
50+0.52 EUR
100+0.46 EUR
500+0.35 EUR
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FDC6303N fdc6303n-d.pdf
FDC6303N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.68A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 680mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 157625 Stücke:
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AnzahlPrivatkunde
16+1.32 EUR
26+0.82 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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FDC6305N FDC6305N-D.PDF
FDC6305N
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 2.7A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
auf Bestellung 17970 Stücke:
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AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
50+0.82 EUR
100+0.73 EUR
500+0.56 EUR
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FDC6306P FDC6306P-D.pdf
FDC6306P
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 1.9A SSOT6
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 34259 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.78 EUR
19+1.11 EUR
50+0.81 EUR
100+0.71 EUR
500+0.55 EUR
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FDC6333C FDC6333C-D.PDF
FDC6333C
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
20+1.08 EUR
50+0.8 EUR
100+0.7 EUR
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FDC634P fdc634p-d.pdf
FDC634P
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 8720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
18+1.23 EUR
100+0.8 EUR
500+0.62 EUR
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FDC653N fdc653n-d.pdf
FDC653N
Hersteller: onsemi
Description: MOSFET N-CH 30V 5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 6035 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
26+0.82 EUR
100+0.63 EUR
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FDC6561AN fdc6561an-d.pdf
FDC6561AN
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.5A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 13650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
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FDD6690A fdd6690a-d.pdf
FDD6690A
Hersteller: onsemi
Description: MOSFET N-CH 30V 12A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDG6301N fdg6301n-d.pdf
FDG6301N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 61073 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
32+0.67 EUR
100+0.46 EUR
500+0.37 EUR
1000+0.3 EUR
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FDG6303N fdg6303n-d.pdf
FDG6303N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 500MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 54810 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
31+0.68 EUR
100+0.4 EUR
500+0.38 EUR
1000+0.25 EUR
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FDG6304P fdg6304p-d.pdf
FDG6304P
Hersteller: onsemi
Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
23+0.92 EUR
100+0.63 EUR
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FDG6322C fdg6322c-d.pdf
FDG6322C
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.22A SC88
Part Status: Active
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 5836 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.31 EUR
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FDG6323L fdg6323l-d.pdf
FDG6323L
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SC88
Input Type: Non-Inverting
Rds On (Typ): 410mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Ratio - Input:Output: 1:1
Current - Output (Max): 600mA
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
Produkt ist nicht verfügbar
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FDLL300 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDLL300
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA LL34
Produkt ist nicht verfügbar
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FDN306P FDN306P-D.pdf
FDN306P
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 16587 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
25+0.86 EUR
50+0.62 EUR
100+0.55 EUR
500+0.42 EUR
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FDN336P fdn336p-d.pdf
FDN336P
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 93032 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
24+0.89 EUR
50+0.65 EUR
100+0.57 EUR
500+0.44 EUR
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FDN339AN FDN339AN-D.PDF
FDN339AN
Hersteller: onsemi
Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
auf Bestellung 17791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
23+0.92 EUR
50+0.67 EUR
100+0.58 EUR
500+0.45 EUR
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FDN357N fdn357n-d.pdf
FDN357N
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
auf Bestellung 35427 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
22+0.95 EUR
50+0.7 EUR
100+0.62 EUR
500+0.46 EUR
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FDN358P FDN358P-D.PDF
FDN358P
Hersteller: onsemi
Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
Produkt ist nicht verfügbar
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FDN359AN fdn359an-d.pdf
FDN359AN
Hersteller: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 15044 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
24+0.9 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
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FDN360P fdn360p-d.pdf
FDN360P
Hersteller: onsemi
Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 7698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
27+0.79 EUR
50+0.57 EUR
100+0.5 EUR
500+0.38 EUR
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FDN5618P fdn5618p-d.pdf
FDN5618P
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 42901 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
24+0.89 EUR
50+0.65 EUR
100+0.57 EUR
500+0.44 EUR
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FDN5630 fdn5630-d.pdf
FDN5630
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 20407 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
28+0.77 EUR
50+0.56 EUR
100+0.49 EUR
500+0.37 EUR
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FDS2572 FAIRS45105-1.pdf?t.download=true&u=5oefqw
FDS2572
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.9A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
auf Bestellung 14221 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.36 EUR
10+2.37 EUR
100+1.9 EUR
500+1.61 EUR
1000+1.48 EUR
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FDS3672 fds3672-d.pdf
FDS3672
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 46375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.32 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.26 EUR
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FDS4465 fds4465-d.pdf
FDS4465
Hersteller: onsemi
Description: MOSFET P-CH 20V 13.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 7431 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.49 EUR
10+2.87 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.43 EUR
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FDS4935A fds4935a-d.pdf
FDS4935A
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
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FDS5670 fds5670-d.pdf
FDS5670
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 20147 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.02 EUR
10+3.39 EUR
100+2.4 EUR
500+1.94 EUR
1000+1.78 EUR
Mindestbestellmenge: 5 Stücke
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